Abstract: An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

Abstract: The production of improved multiple cell photoresponsive amorphous devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap adjusting elements to the alloys in one or more cells of the device. The adjusting element or elements are added at least to the active photoresponsive regions of amorphous cells containing silicon and fluorine, and preferably hydrogen. One adjusting element is germanium which narrows the band gap from that of the materials without the adjusting element incorporated therein. Other adjusting elements can be used such as carbon or nitrogen to increase the band gap. The silicon and adjusting elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition.

Abstract: A data storage medium which includes a transition metal as a switching modulator is disclosed. The data storage medium is switchable by projected beam energy, has an erased signal to noise ratio that is substantially invariant with respect to written storage time, and a contrast ratio that is substantially invariant with respect to cycle history. The data storage medium is substantially oxygen free and comprises a chalcogenide and a switching modulator. The switching modulator is a transition metal, especially from the right hand column of Group VIII, e.g. nickel (Ni), palladium (Pd), and platinum (Pt). The concentration of the switching modulator in the data storage medium is high enough to suppress grain growth during written storage, to provide random crystallite orientation and to increase the erase velocity, but low enough to permit discrimination between detectable written and erased states of the data storage medium.

Abstract: X-ray dispersive and reflective structures and materials are provided which exhibit improved resolution and reflectivity in specific ranges of interest without substantial fluorescence or absorption edges. The structures are formed of metallic and non-metallic layer pairs and can include a buffer layer between each layer to prevent interdiffusion to stabilize the structures. The materials can be thermally activated to control the desired properties, during or post deposition. The structures can be deposited by ion beam absorption techniques to form the structures in a precise manner. The index of the refraction of the structures can be continuously varying throughout the structures.

Abstract: Disclosed is a method and apparatus for depositing material on a substrate by periodically measuring an optical property of a region thereof, thereby obtaining a substantially continuous profile of the property for that region. The measured value of the property is compared with a predetermined value, and when the two values are substantially equal, deposition is terminated, thereby resulting in correct and reproductible layer thicknesses.

Abstract: A quick testable subassembly with redundant isolation devices usable in a liquid crystal display has a pair of coplanar spaced apart electrode segments connected to one or more-isolation devices. Address lines are connected to the isolation devices or the electrodes. The isolation devices and electrical connections to the electrode segments can be quickly tested prior to assembly of a complete display. Redundant isolation devices are formed on the subassembly and inoperative isolation devices can be replaced by associated redundant isolation devices. A method of quickly testing the subassembly and of replacing inoperative isolation devices, and several alternate quickly testable subassembly geometries are also disclosed. A self-selecting redundant geometry and method are also disclosed.

Abstract: Designed tailormade nonequilibrium synthetic disordered materials are provided containing nonperiodically distributed local environments whose position and type are controlled to obtain specific properties which can be coupled or decoupled one from another and collectively from the constraints implied by an ordered structure. Atoms or groups of atoms can be placed in the matrix in specific designed positions to compensate the spins to obtain unusual physical and chemical properties. The compositional variation which produces the required nonequilibrium "multi-disordered" materials is accomplished by selectively depositing desired atoms and groups of atoms into designed locations to permit the construction of a true three-dimensionally engineered material. Where order is an engineering need, it can be designed in a local scale or interspersed in varying amounts including layers through the material to create new material functions.

Abstract: A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed faces of which a plasma region is developed and a substrate continuously passes for the deposition of semiconductor alloy material thereonto. Through the utilization of the vertical deposition scenario, the length of the processor may be substantially foreshortened, power consumption may be substantially decreased and feedstock gases may be more efficiently utilized.

Abstract: A process and apparatus for contiuously producing a relatively large-area, lightweight array of thin film semiconductor alloy photovoltaic cells having no substrate includes depositing a semiconductor alloy film, such as amorphous silicon, on a traveling surrogate substrate, applying a support material to the traveling film to give it mechanical strength and separating the film and support material from the traveling surrogate substrate. The surrogate substrate is preferably an endless stainless steel band from which the deposited alloy film is repeatedly stripped and on which deposits are repeatedly made. The apparatus may provide for the deposition and patterning of a back electrode on the substrate before deposition of the alloy film to form one set of electrical interconnections for the array.

Abstract: An amorphous silicon semiconductor alloy having multiple layers is used to form a photoelectrode (either a photoanode or a photocathode) for use in a photoelectrochemical cell for the photoelectrolysis of water to produce hydrogen or the conversion of solar energy into electrical energy. Each layer of the semiconductor alloy has a different dopant concentration ranging from no dopant to a heavy dopant concentration. The photoelectrochemical cell can utilize a photocathode and a conventional metal anode, a photoanode or both a photocathode and a photoanode according to the present invention. The semiconductor alloy of the photoelectrode is a-Si:F:H or a-Si:H.sub.x deposited on a reflective layer of aluminum or molybdenum which is deposited on a substrate of glass or stainless steel. A tunnelable oxide layer can be deposited or intrinsically formed to cover and protect the top surface of the semiconductor alloy body.

Abstract: Methods for producing field effect transistors having short current-conduction channels and reduced parasitic capacitance are disclosed. The methods allow the channel length to be substantially less than the minimum feature size of the photolithographic mask if desired, thereby enabling very short channel length transistors to be formed using conventional ten micron photolithography.

Abstract: Light influencing displays and more particularly liquid crystal displays are disclosed which have a pair of light transmissive electrode supports which are uniformly spaced apart by a predetermined distance over the entire display area. The electrode supports are spaced apart by spacer means including a plurality of spacers arranged in a predetermined pattern between the electrode supports.

Abstract: Coatings and methods for forming same are provided. Generally, the coatings are wear resistant disordered coatings of at least one nonmetallic element and a transition metal that are deposited on an article surface, such as a tool surface or other surface that is subjected to wear or friction. The resulting tools generally exhibit increased life with excellent lubricity thereby improving the surface finish of workpieces machined therewith.Adherence coatings are provided for achieving improved adherence of the wear resistant coating to the substrate.

Abstract: A solid state semiconductor device is disclosed which is programmable so as to alter the impedance between its two terminals. In many embodiments, the device is programmable to have any one of four conditions: a first in which the electrical impedance is relatively high in both directions; a second in which the impedance is relatively high in one direction and relatively low in the opposite direction; a third in which the impedance is relatively high in the opposite direction and relatively low in the first direction; and a fourth in which the impedance is relatively low in both directions. Such a programmable device can be made with semiconductor layers which form two series coupled back-to-back diodes, each of which can be selectively programmed to lose its rectifying feature. Structures are disclosed which include a plurality of such programmable devices in one or more separately programmable planes, each with its own addressing means.

Abstract: Multilayer protective coatings that are applied over a substrate are disclosed that comprise a plurality of superimposed multilayer units. Each multilayer unit contains two or more superimposed thin layers in which at least two layers are compositionally different. The properties of the resulting coating are a combination of the properties of the individual layers. One layer of a multilayer unit may provide hardness or wear resistance and another layer may provide lubricity, for example. The thickness of the individual layers can be related to the microscopic surface relief of the substrate to which the protective coating is applied.

Abstract: Light influencing subassemblies and displays each having a structure in which all of the addressed pixel electronic circuitry including an optimized capacitance and including isolation devices where utilized, are located at one electrode side of each pixel electrode combination. The structure includes the subdivision of one pixel electrode into at least two spaced apart side-by-side electrode segments opposite a common electrode. The displays include light influencing material disposed between the segmented and common electrodes which form a first capacitance. A second capacitance is formed electrically in parallel with the first capacitance. The second capacitance can include an additional capacitance electrode formed separated from the segmented electrode by an insulating layer.

Abstract: The present invention provides an electrode which uses a disordered active material preferably formed by rapid solidification. The active material does not need a binder to be used as an electrode, and thus, is considered self-supporting. The material also is substantially non-porous or impermeable to an electrolyte and when used as an electrode exhibits an increase in cell capacity with improved resistance to corrosion. An electrode of the present invention provides greatly improved cycle life and energy density without a significant decrease in cell capacity. Methods of making the electrode by rapidly solidifying a disordered material are also included. A method of assembling an electrochemical cell using a self-supporting electrode includes the step of producing a disordered active material and aligning the material in a predetermined position in a cell casing.

Abstract: A new and improved thin film field effect transistor and method provides such a transistor having increased operating frequencies and higher output currents. The transistor includes a gate electrode having a non-coplanar surface with respect to the substrate and a deposited semiconductor material overlying the gate electrode to form a current conductor channel between a source and drain. The length of the current conduction channel is determined by the thickness of the gate electrode which can be accurately controlled. As a result, short channel lengths are possible without high precision photolithography for high output currents and fast operating speeds. Further, a gate insulator is disposed between the gate and the deposited semiconductor. The gate insulator, which can be a gate oxide, can be annealed prior to the deposition of the deposited semiconductor to provide enhanced field effect mobilities. This further increases the transistor output currents and operating speeds.

Abstract: Circuit assemblies are disclosed which include a supporting substrate, a plurality of conductive lines supported on the substrate and a deposited phase-change material capable of an energy induced phase change from an initially high resistance state to a relatively low resistance state placed in electrical contact with the conductive lines. The assemblies also include contact receiving means connected to the conductive lines at preselected discrete locations to receive externally applied contact means, such as electric probes, for applying voltages across selected portions of the conductive lines. The application of such voltages can induce a phase change in portions of the phase-change material which bridge breaks in the conductive lines of such circuit subassemblies, changing such portions from their high resistance state to their low resistance state, thereby forming electrically shunting conductive paths around such open circuits. There are also disclosed methods of making such circuit assemblies.

Abstract: Methods are provided for analyzing multilayer structures. The multilayer structure is electrolytically anodized at constant current through a plurality of layers of the structure over a predetermined surface area. During the anodization, the change of the anodization voltage or a time derivative thereof as a function of time is monitored as the anodization through the layers occurs to obtain data. The data may be analyzed in several ways to determine whether degradation of the multilayer structure has occurred, to determine the number of layers present in the multilayer structure and to determine the layer thickness of the multilayer structure.The disclosed methods are accurate, inexpensive and rapid.