Abstract: A method of making a high performance, small area thin film transistor having a drain region, an insulating layer, and a source region forming a non-coplanar surface with respect to a substrate is disclosed. The insulative layer is formed in between the source and drain regions. A deposited semiconductor overlies the non-coplanar surface to form a current conduction channel between the drain and source. A gate insulator and gate electrode overly at least a portion of the deposited semiconductor adjacent thereto. The non-coplanar surface can be formed by utilizing a dry process to simultaneously etch through several layers in a continuous one-step process. A second dielectric layer may be formed above the three previous layers. This decouples the gate electrode from the source region by creating two capacitances in series, thereby limiting the capacitance between the gate electrode and the source region.

Abstract: There is disclosed a new and improved apparatus for making a stamping master for video disk replication wherein a film of material which is reversibly convertible between two stable states, one having a high electrical conductivity and the other having a low electrical conductivity, is deposited on a substrate while in one of the states. The material is then imaged with information in coded form by converting selected areas of the film to the other state in a predetermined pattern corresponding to the coded information. The conversion can be accomplished by light, electromagnetic energy or heat.At this stage, an intermediate subassembly, composed of the imaged film on the substrate, is formed which can be read for accuracy by detecting the state of the selectively converted areas with respect to the rest of the film. Corrections can be made by converting the state of selected areas of the film as required.

Abstract: An improved anode for acting as a catalyst for the oxygen evolution reaction in water electrolysis. The anode provides lower overvoltages, good kinetics, chemical and mechanical stability, low heat of oxygen adsorption and low operating costs. The anode material is formed from a host matrix including at least one transition element, preferably Co, Ni or Mn, which is structurally modified by incorporating one or more modifier elements, one of which may also be a transition element, to improve its catalytic properties. Modifier elements, including for example Co, Ni, Sr, Li, In, K, Sn, C, O, Mn, Ru and Al structurally modify the local chemical environments of the host matrix to provide a material having an increased density of catalytically active sites. The catalytic material can be formed by vacuum deposition techniques such as by cosputtering the host matrix and modifier elements to form a layer of catalytic material on an electrode substrate.

Abstract: Improved imaging film-forming compositions and improved organo tellurium imaging films are provided that require no separate fixing. Normal development of the film by application of heat results in a fixed film.

Abstract: An optical method for controlling the thickness of a layer of material as it is deposited upon a substrate advanced through a glow discharge chamber. A source of radiant energy of white light, and a detector are so positioned that the energy of the source is reflected from the substrate to the detector. A control system accepts the output of the detector to generate control signals responsive to layer thickness for adjusting the deposition parameters of the chamber.

Abstract: Point source X-ray focusing device structures, materials and methods of forming them are provided which exhibit a greatly increased total reflected intensity for a desired X-ray wavelength of interest. The devices include one or more focusing elements which each have a focusing surface with a plurality of layer pairs formed thereon. The focusing surface and the layer pairs are designed to collect, reflect and concentrate the maximum X-ray flux from a point source to a focus point for a particular wavelength of interest.

Abstract: Coatings are provided that are especially useful for decorative purposes. The coatings are black, amorphous carbon and may be formed by dc magnetron sputtering on a substrate utilizing a target of high density graphite.

Abstract: A device and method for the detection of tumors in human and animal tissue using transmission or reflection of nonionizing radiation, in particular, visible light having a wavelength most advantageously in the range of 400 to about 700 nanometers, and infrared light having a wavelength in the range of 700 nanometers to about 4 microns (4000 nanometers). Measurement of the amount of absorption and scatter in regions of the tissue involved is in a scanning mode to produce a shadowgraph image using either single wavelength grey scale or preferably multispectral multiple wavelength false color imaging techniques. The apparatus and method also advantageously can be used in conjunction with computer image reconstruction similar to that employed in computerized axial tomography of the type used in X-ray diagnostic techniques. In one of its more advantageous aspects, the apparatus and method are used to differentiate between benign and malignant human breast tumors.

Abstract: A photoresponsive amorphous semiconductor material is modified by incorporating at least one compensating agent selected from a group consisting of hydrogen, lithium, fluorine, beryllium, aluminum, boron, magnesium, other Group I elements, and compounds of these elements. The semiconductor material is cathodically treated either simultaneously with or subsequent to this modification. The semiconductor material may be additionally modified by incorporating a second modifying agent selected from a group consisting of silicon, the transition elements, the lanthanides, and compounds of these elements. The semiconductor material also may be subjected to heat treatment in an inert atmosphere before the cathodic treatment.A photoanode utilizing the above described semiconductor material further includes a substrate to support a film of said material. The photoanode may additionally include a second semiconductor film having a small band gap inserted between said substrate and said first semiconductor film.

Abstract: A simplified microfiche recording apparatus and method is provided that images a light image reflected through a fixed mirror train from hard copy or other source in microimage size on an intermediate dry-process film, develops the microimage and transfers the microimage by contact printing to an archival microfiche film. Stations are provided for imaging, developing and transferring which are in fixed relation to each other along a stationary intermediate film head. Single frame advancement of the intermediate film is utilized from station to station, where suitable, to avoid fogging of the intermediate film by insuring that the portion of the intermediate film which is subject to light piping from the transferring station contains developed microimage.

Abstract: An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells in the conductive state have a resistance of 100 ohms or less. The cells have a maximum permittable processing temperature of 400.degree. centigrade or more and a storage temperature of 175.degree. centigrade or more. The cells are formed from doped silicon alloys including at least hydrogen and/or fluorine and contain from about 0.1 to 5 percent dopant. The cells can be plasma deposited from silane or silicon tetrafluoride and hydrogen with 20 to 150,000 ppm of dopant.

Abstract: A thermoelectric device exhibiting both structural integrity and decreased stress across the device notwithstanding the application of thermally cycled temperature differentials thereacross includes, electrically interconnected thermoelectric elements and a rigidly affixed substrate. Thermal stress is relieved by using flexible conductors to interconnect the thermoelectric elements, and by the use of a flexile joint to attach a second substrate to the remainder of the device. Complete elimination of the second substrate may also be used to eliminate stress. Presence of the rigidly affixed substrate gives the device sufficient structural integrity to enable it to withstand rugged conditions.

Abstract: A method and a multiple chamber apparatus for the continuous production of tandem, amorphous, photovoltaic solar cells on substrate material, whereby, at least six amorphous layers are continuously and sequentially deposited on the substrate material under steady conditions. The substrate material is driven from a supply core, through at least two triads of deposition chambers, to a take-up core. Each amorphous layer of each p-i-n-type cell is produced in one chamber of the triad of deposition chambers. In the first chamber of each triad of chambers, dopant gases are introduced to deposit a first conductive layer. In the second chamber of each triad of chambers, reaction gases are introduced to deposit an intrinsic layer atop the first layer. And in the third chamber of each triad of chambers, dopant gases are introduced to deposit a second conductive layer, opposite in conductivity from the first conductive layer, atop the intrinsic layer.

Abstract: An anode for hydrogen oxidation in a fuel cell is formed from a host matrix including at least one transition element which is structurally modified by the incorporation of at least one modifier element to improve its catalytic properties. The catalytic body is based on a disordered non-equilibrium material designed to have a high density of catalytically active sites, resistance to poisoning, and long operating life. Modifier elements, including Ti, Mo, Zr, Mg, V, Si or Al, structurally modify the local chemical environments of a nickel or other transition element host matrix to form the catalytic materials of the anode. The improved low overvoltage catalytic materials of the anode of the present invention increase the operating efficiencies of fuel cells employing such anodes. The catalytic materials can be deposited as a layer on the surface of porous electrode substrates to form a gas diffusion anode or can be formed as a gas diffusion electrode.

Abstract: An amorphous semiconductor body, preferably a silicon-containing vapor deposited film, is provided containing at least fluorine as a compensating or altering and also an alloying agent, and most preferably at least one complementary compensating or altering agent, which reduce the localized defect states in the energy gap of the amorphous semiconductor material to a degree which either one alone could not achieve. As a result, the amorphous semiconductor body provides a higher photoconductivity, wider depletion width, more efficient charge carrier collection, longer carrier lifetime, and lower dark intrinsic electrical conductivity, where desired, and can be more easily modified to shift the Fermi level to provide very efficient n type extrinsic electrical conductivity and the like than prior amorphous semiconductor bodies.

Abstract: The open circuit voltage and efficiency of photovoltaic devices formed from multiple regions of semiconductor alloys including at least one narrow band gap semiconductor alloy are enhanced. The device includes a pair of doped regions and an intrinsic body between the doped regions. The intrinsic body includes a first intrinsic region and an open circuit voltage enhancement means including a second intrinsic region. The second intrinsic region has a wider band gap than the band gap of the first intrinsic region and is disposed between the first intrinsic region and one of the doped regions. The open circuit enhancement means can also include a third intrinsic region also having a wider band gap than the first intrinsic region and disposed on the side of the first intrinsic region opposite the second intrinsic region.

Abstract: The production of improved photoresponsive amorphous alloys and devices, such as photovoltaic, photoreceptive devices and the like; having improved wavelength threshold characteristics is made possible by adding one or more band gap increasing elements to the alloys and devices. The increasing element or elements are added at least to a portion of the active photoresponsive regions of amorphous silicon devices. One increasing element is carbon which increases the band gap from that of the materials without the increasing element incorporated therein. Other increasing elements can be used such as nitrogen. The silicon and increasing elements are concurrently combined and deposited as amorphous alloys by vapor deposition, sputtering or glow discharge decomposition. A density of states reducing element allows the band gap increasing element(s) to be added to the alloy to adjust the band gap without reducing the electronic qualities of the alloy.

Abstract: An apparatus for manufacturing thermoelectric devices includes two conductive strip receiving fixtures, a thermoelectric element receiving fixture and a u-shaped member. The conductive strip receiving fixtures act to retain the strips in proper registry during the processing steps of screen printing insulating material, or solder paste thereon as well as during attachment of thermoelectric elements thereto. The element receiving fixture is complemental with either of the strip receiving fixtures to maintain the elements in place during the coupling of the elements to the strips in one of the strip receiving fixtures. The strip receiving fixtures are complemental with the u-shaped member to complete the coupling of the elements to the strips such that the elements are coupled thermally in parallel and electrically in series. The u-shaped member also facilitates the introduction of a ceramic potting compound therebetween.Also disclosed is a method for manufacturing a thermoelectric device.

Abstract: A new and improved thermoelectric device and a method of manufacturing same takes advantage of the anisotropy of the materials employed to provide a substantially increased power output over prior art devices. The individual thermoelectric elements are pressed using techniques such as those employed in powdered metallurgy and electrically coupled such that a current path is established through the elements in a direction substantially perpendicular to the direction of pressing.The method and device of the present invention also achieve a substantially thinner device than was previously possible with no concomitant sacrifice in individual thermoelectric element integrity or increased resistance of the electrical connections between the individual thermoelectric elements. The individual thermoelectric elements are dimensioned such that each has a first dimension substantially greater than either its second or third dimensions.

Abstract: Systems and methods for detecting and eliminating latent and existing short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region are disclosed. The latent paths are first converted to existing short circuit current paths by applying a bias voltage to the devices. The short circuit current paths which are eliminated extend through the at least one semiconductor region from the substrate to the layer of conductive light transmissive material. The resistivity of the short circuit current paths is increased substantially at the interface between the conductive light transmissive material and the semiconductor region by isolating electrically the conductive light transmissive material from the short circuit current path.