Abstract: A laminated noise attenuation panel for both sound absorption and sound transmission loss having as its principal layers an expanded thermoplastic core with alternately inverted cavities, half opening to each side of said core and a sheet of cured resinous material having hollow microspheres with substantially reduced atmospheric pressure randomly dispersed in said resinous material, said cured resinous sheet facing away from the noise source. The cavities of said core panel facing away from said noise source may be filled with cellulose. The side of said core panel toward the noise source may include a laminated layer of a perforated material and a decorative layer. The side of said panel away from the noise source may also include a layer of other materials and a decorative layer. Data for the noise attenuation properties of various combinations of laminations are presented.

Abstract: A mechanical system for speed adjustment, comprising mechanical driving means and a driven shaft member, with linking means between the driving source and the drive shaft member for driving the latter, the system further comprises a crank element comprising an eccentric disc disposed on the driven shaft member and a connecting rod driven by the eccentric disc, the connecting rod comprising an arm portion that rides the eccentric disc. Also included are means for adjusting the eccentricity of the eccentric disc with respect to the driven shaft, which adjusting means comprises a spacing element movable into and from a position between the crank element and the driven shaft, the system also contains an output shaft element driven by the connecting rod.

Abstract: An intelligence display apparatus comprising:(a) an envelope comprising a substantially transparent faceplate:(b) illumination means for directing light toward said faceplate:(c) an intelligence selection element disposed between said faceplate and said illumination means, said selection element comprising first regions substantially transparent to said light and second regions substantially opaque thereto, said first and second regions having respective widths in the ratio of about 6:7 to about 8:9;(d) an intelligence storage element comprising a plurality of discrete and different sets of intelligence, said storage element being disposed between said selection element and said illumination means, said sets individually comprising a plurality of bits respectively embodying different portions of said intelligence, such that said bits of each set collectively comprises a composite of the intelligence of said set, each one being totally opaque, totally transparent, partially opaque and partially transparent to

Abstract: An electrophotographic diffractometer apparatus, comprising a photoconductive storage member, means for uniformly charging said storage member, means for holding a diffraction specimen, means for directing a collimated beam of electromagnetic radiation to said specimen, whereby diffracted rays of said beam are directed to said charge storage member and produce discharged local areas thereon in accordance with the diffraction characteristics of said specimen, and scanning means for electrically measuring the charge pattern at said storage member.

Abstract: A monolithic electroluminescent semiconductor device comprising a monocrystalline semiconductor body having a major surface; a semiconductor zone which extends along a part of said major surface of said semiconductor body, said zone adjoining a portion of the semiconductor body and forming therewith a diode that can emit radiation, said diode having a junction which extends to at least said surface of said semiconductor body; a current path element disposed at said major surface and connected electrically in parallel with said junction, said current path element being physically separate from said semiconductor zone and said semiconductor body portion and leaving said junction at least partly intact at said surface, whereby the current voltage characteristics of said current path and of said diode intersect each other and the dynamic admittance of said current path at the intersection is smaller than that of said diode.

Abstract: The invention relates to a photodiode having a semiconductor body comprising regions of opposite conductivity types which are separated by a p-n junction and of which at least one region has an anti-reflective layer.The anti-reflective layer consists of tin-doped indium oxide and forms an ohmic connection with the one region.

Abstract: An arrangement is discussed for producing free atoms of a substance for atomic spectroscopy purposes comprising an oven and an oven element, which contains the substance to be examined, which oven is surrounded by cooling means which, during the spectroscopic measurements, cool the oven wall and which must have a temperature of at least 30.degree. C.

Abstract: A method of manufacturing a semiconductor device, in which on a basic mask of a first material there is provided a layer of a second material, after which the first material with the second material present thereon is removed, and an island of the second material remaining with a window of the basic mask is used as an alignment feature for a subsequent mask.

Abstract: A method of manufacturing a semiconductor device, in particular a monolithic integrated circuit, in which highly doped zones are provided according to a given pattern on one side of a monocrystalline silicon substrate body by local diffusion of at least one impurity in a substantially flat surface of the substrate body and the substrate surface on said side is given a profile in a pattern which corresponds to the pattern of the highly doped zones, after which an epitaxial silicon layer is provided on said side and one or more semiconductor circuit elements are then formed while using at least one photoresist step, characterized in that the substantially flat substrate surface is given a crystal orientation lying between a {001} face and an adjacent {111} face, which orientation deviates at least 10.degree. from the said {001} face and at least 15.degree. from said {111} face and is present in a strip within 10.degree. from the crystallographic zone formed by the said two faces.

Abstract: An integrated circuit having multi-layer transistors which are separated from each other by means of tub-shaped or dish-shaped isolation zones. The isolation zones are of a conductivity type opposite to that of the zone of the circuit element which adjoins the inner wall of the tub-shaped zone and is present within the isolation zone, the p-n junction between the last-mentioned zone and the isolation zone being substantially short-circuited. As a result of this it is substantially prevented that the adjoining zone of the circuit element injects, via said p-n junction, charge carriers into the isolation zone, as a result of which the isolation is improved inter alia in that sense that the leakage current is reduced and higher breakdown voltages and smaller stray capacitances occur.

Abstract: A method and apparatus for detecting the presence of vapor-producing substances such as explosives contained within an item of baggage, in which the item of baggage is enclosed in a chamber and the air pressure in the chamber is varied cyclically in order to mix at least a portion of the air in the item of baggage with that in the chamber. A vapor detector is then used to detect the presence in the chamber air of vapors given off by an explosive substance or drug (e.g., cannabis) contained within the item of baggage.

Abstract: A method of manufacturing a semiconductor device, comprising the steps of providing a semiconductor body comprising a first surface and an underlying semiconductor portion that is of first conductivity type, providing a doping material of said first conductivity type at a first portion of said first surface prior to the formation of a sunken insulating layer, said first portion being situated beside said sunken insulation layer, forming an insulation layer consisting of insulating material and sunk locally in said body from said first surface, and then introducing said doping material into said semiconductor body via said first portion of said first surface so as to form a zone of said first conductivity type, said zone contacting said underlying semiconductor portion, and zone extending at the area of contact to a depth greater than that of said sunken insulation layer.

Abstract: Method of producing integrated circuit including bipolar transistors, comprising the steps of forming collector zone of a first transistor at least partly by diffusing an impurity from a substrate part that is, before the growth of a first epitaxial layer on the substrate, doped at least locally with the impurity, forming the first epitaxial layer, and forming the collector zone of a second transistor by diffusing an impurity in the first epitaxial layer prior to growing a second epitaxial layer. Also, an integrated circuit produced by this method.

Abstract: A line scanner comprising an array of CMOS pairs having a common resistive gate. The gate provides a potential gradient along the array in response to a potential difference across its ends, so that the CMOS pairs can receive a gating voltage in sequence when such potential difference undergoes a progressive change in magnitude.

Abstract: A photocathode structure containing a photocathode material, comprising a plate of single crystal gallium indium phosphide having major surfaces and relative proportions of gallium and indium such that the lattice parameter thereof is substantially the same as that of said photocathode material, and, an epitaxial layer of photocathode material located on a first said major surface of said crystal, the thickness of said layer of photocathode material being of the order of the diffusion length of electrons therein and at least part of a second said major surface of the gallium indium phosphide plate being substantially free from contact by solid material.

Abstract: An article transfer and inspection apparatus comprising chamber-defining means, substantially impermeable to x-rays; and x-ray source for directing x-rays to a first portion of said chamber; feed and extraction conveyor systems individually having at least a portion thereof outside the chamber and respectively serving to introduce and remove an article into and from the chamber, the feed conveyor system being operable at a first speed; an inspection conveyor system located between the feed and extraction conveyor systems and at least partly disposed at the chamber first portion, the inspection conveyor system being operable at a second speed at least equal to the first speed and serving to carry the article through the chamber first portion; and means for converting x-rays passing through the first portion and the article into a visual image.The apparatus can also include means for achieving a pre-determined spacing between various articles.

Abstract: A semiconductor device having a photosensitive semiconductor element, for example a photoresistor, having a photosensitive layer of high-ohmic material, preferably gold-compensated silicon, which is present on a high-ohmic substrate region and which is covered with a highly doped semiconductor surface layer.According to the invention, an epitaxial intermediate layer is present between the substrate region and the photosensitive layer and has a resistivity which lies between that of the photosensitive layer and that of the substrate region, while the surface layer, which is preferably partly etched away prior to the provision of the electrode, is grown epitaxially on the photosensitive layer.

Abstract: A diode comprising a semiconductor body including at least first and second adjoining regions of the same conductivity type. The first region includes the diode junction and has a high resistivity, while the second region has a high impurity concentration that varies gradually and increases with increasing distance from the interface between the first and the second regions. The second region comprises two adjoining zones, the zone removed from the first region being more highly doped than the zone proximate said region.The method of manufacturing the above-described diode.

Abstract: An electroluminescent semiconductor device having localized emission.The device comprises a p-n diode of which a region is covered with a dielectric layer which itself is covered partly by an electrode polarized with respect to the said region to establish an electric field zone influencing the injected carriers.Application to the localized control of the emission of an electroluminescent diode.

Abstract: A semiconductor device having a transistor, in particular a power transistor, of the planar type which comprises a distributed base-series resistor for safety against second breakdown. According to the invention the base resistor is formed in that a resistance-increasing region which is present beyond the emitter zone and substantially entirely surrounds the inner contact surface is present in the base zone between the contact surfaces of the emitter and base electrode layers surrounding each other along substantially the whole edge of the emitter-base junction.