Abstract: A semiconductor device comprising a surface layer of one conductivity type provided on a support and separated therefrom by a junction, said surface layer defining a surface and comprising island-insulating means in the form of an electrode pattern at the surface and which surrounds at least an island-shaped part of the surface layer comprising a component. The electrode pattern is separated from the surface layer by a barrier junction and is to induce electric fields in the surface layer to form a depletion region that is below the electrode pattern and extends throughout the thickness of the surface layer, an electric connection for draining leakage currents, is at part of the surface layer present at the edge of the surface and outside the pattern.

Abstract: A semiconductor device, for example an integrated circuit comprising insulate gate field effect transistors in which the gate electrodes comprise doped portions of a deposted layer of polycrystalline silicon, wherein a first conductive connection layer extends at least partly on insulating material present on one surface of a semiconductor body, said first layer being insulated from and crossing over an underlying, second conductive connection layer which is of semiconductor material locally deposited on said one surface of the semiconductor body, said second layer and the underlying portion of the semiconductor body comprising a quantity of doping substance introduced via said second layer, for example in the case of a silicon gate circuit introduced at the same time as simultaneously doping the gate electrodes and forming the source and drain regions.

Abstract: Method of producing integrated circuit including bipolar transistors, comprising the steps of forming collector zone of a first transistor at least partly by diffusing an impurity from a substrate part that is, before the growth of a first epitaxial layer on the substrate, doped at least locally with the impurity, forming the first epitaxial layer, and forming the collector zone of a second transistor by diffusing an impurity in the first epitaxial layer prior to growing a second epitaxial layer. Also, an integrated circuit produced by this method.

Abstract: Monoatomic layers to reduce the work function of photocathodes, secondary emission electrodes and field emission electrodes are obtained by surface segregation as a result of a thermal treatment after preceding indiffusion of the activator. Examples are in particular p-semiconductors such as silicon and III-V compounds with alkali metals.

Abstract: A method of producing a semiconductor device comprising a silicon body in which there is located an oxide layer that is sunk locally from a surface of said body and over at least part of the thickness of said body, comprising the steps of providing said silicon body, locally providing on said silicon body surface a first masking layer capable of masking the underlying silicon against oxidation, forming a recess in a part of said silicon body at the area at which said sunken oxide layer is to be provided, covering the side walls of said recess with a second masking layer to protect the underlying silicon against oxidation and oxidizing said silicon at the unmasked area at the bottom of said recess to form said sunken oxide layer.

Abstract: A collapsible dish rack, comprising:A. a base portion comprising a first surface;B. a number of apertured projecting first elements extending from said first surface;C. a frame member disposed above said first surface and comprising a second surface facing said first surface;D. a number of apertured projecting second elements extending from said second surface toward said first elements;E. intermediate linking elements disposed between said first and second projecting elements, said linking elements individually comprising a first end portion pivotally disposed in an associated aperture of a said first projecting element and a second end portion pivotally disposed in an associated apertures of a said second projecting element; andF. a detente portion located at at least one of said first and second projecting elements so as to engage the linking element associated therewith.

Abstract: A semiconductor memory element comprising a semiconductor substrate and an insulating layer thereon, a charge storage element located on a portion of the insulating layer and separated from the semiconductor substrate, and first device means for injecting hot electrons from the semiconductor substrate into the insulating layer portion to write a first charge state on the charge storage element and second device means for injecting hot holes from the semiconductor substrate into the insulating layer portion to write a second charge state on the charge storage element.

Abstract: A method of manufacturing a semiconductor device by means of doping via a mask. According to the invention a mask is used which is manufactured by providing one or more "first" apertures in a masking layer, after which islands of an isotropically growing material are grown in the said apertures, after which the parts of the masking layer present between the islands are removed and finally the said islands themselves are removed.

Abstract: For the introduction of an alkali metal vapour into an electric discharge tube, in particular for the vapour deposition of surfaces for photo-emission or secondary electron emission in such a tube, generators are used which comprise a filling which consists of at least one alkali metal alloyed with gold and/or silver, and/or copper alloyed with gold or silver.

Abstract: A device for monitoring the occupation of respective positions by team members in a game where each team member regularly changes position. It has a carrying element with a number of discrete spaces. At the spaces there can be individually provided information as to the position or team member. There is a movable element with the same number of spaces on the carrying element. The movable element carries the other of the two i.e. position or team member.

Abstract: An electron collimator is formed by two pairs of multi-leaved corner plates which are capable of simultaneous movement to alter the dimension of the collimator in two dimensions.In a preferred embodiment each corner shaped plate has two leaves which interleave with the leaves of an adjoining corner plate.

Abstract: In a method of providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of a reservoir containing the solution. By a relative displacement of the reservoir relative to the substrate holder, the said flat side of the substrate is moved below or away from the solution present in the reservoir. The flat side of the substrate is brought at a desired height relative to the lower side of the reservoir, solution from the reservoir is provided on the substrate and when the reservoir is removed relative to the substrate a quantity of solution of an adjustable height is left on the substrate.

Abstract: A semiconductor device having a monocrystalline semiconductor layer provided on a surface comprising at least one region obtained by diffusion of a doping impurity whose width from the surface of the semiconductor layer in the direction of the substrate first increases and than decreases while the chemical composition of the semiconductor layer on the substrate side differs from that at the surface.

Abstract: A semiconductor device comprising a semiconductor body comprising a first surface, a first insulating layer on said first surface of the semiconductor body, a first conductive connection layer comprising a strip portion and disposed on said first insulating layer, a second insulating layer overlying said first insulating layer and first conductive connection layer, and a second conductive connection layer situated on said second insulating layer, said second insulating layer comprising an aperture that at least partly overlies said strip portion of said first conductive connection layer and has a cross-dimension d in a direction substantially at right angles to the longitudinal direction of said strip portion, a contact portion of said second conductive connection layer completely covering said aperture and contacting said strip portion of said first conductive connection layer via said aperture, wherein x < d + 2t and x represents the width of said strip portion and t the alignment tolerance associated wi

Abstract: In a radiation detector two photocathodes are provided one on either side of a channel amplifier plate. One of these photocathodes is provided, so as to be electrically floating, on a layer of a dielectric on the opposite surface of which an electrode is provided, the lateral conductivity of this photocathode being low either owing to its subdivision into electrically isolated areas or owing to the choice of material.The potential distribution in the detector can be reversed from a write-in situation to a read-out situation so that the channel plate can be used twice and the amplification is subdivided, enabling it to be increased to a higher level.

Abstract: A semiconductor device having a Schottky junction formed by providing a semiconductor body at least two metal layers one on top of the other which can each form a Schottky barrier with the semiconductor, in which, according to the invention, the formed Schottky diode has a higher barrier than each of the metals individually relative to the semiconductor, by heating the assembly above 400.degree.C. Preferably nickel or cobalt is first provided and thereon aluminum, and heating is carried out at 500.degree.C.