Abstract: A class of novel structures which make novel use of polymer based reflective polarizing films in an improved polarization conversion system which are useful in liquid crystal projection systems that are easily manufactured, of lower cost, and permit the versatility of higher numerical aperture polarization conversions. Another aspect of the present invention are polarization modulating liquid crystal projection display systems utilizing the polarization conversion systems of the present invention.

Abstract: A thin film transistor is described incorporating a gate electrode, a gate insulating layer, a semiconducting channel layer deposited on top of the gate insulating layer, an insulating encapsulation layer positioned on the channel layer, a source electrode, a drain electrode and a contact layer beneath each of the source and drain electrodes and in contact with at least the channel layer, all of which are situated on a plastic substrate. By enabling the use of plastics having low glass transition temperatures as substrates, the thin film transistors may be used in large area electronics such as information displays and light sensitive arrays for imaging which are flexible, lighter in weight and more impact resistant than displays fabricated on traditional glass substrates. The thin film transistors are useful in active matrix liquid crystal displays where the plastic substrates are transparent in the visible spectrum.

Abstract: A method for making nanoparticles via metal salt reduction comprises, first, mixing metal salts in a solvent. Second, a reducing agent is added to the solvent at a temperature in the range of 100° C. to 350° C. Third, the nanoparticles dispersion is stabilized. Fourth, the nanoparticles are precipitated from the nanoparticle dispersion. Finally, the nanoparticles are re-dispersed into the solvent. The metal salt comprises a combination of FeCl2, FeCl3, Fe(OOCR)2, Fe(RCOCHCOR)3, CoCl2, Co(OOCR)2, Co(RCOCHCOR)2, and one of Pt(RCOCHCOR)2, PtCl2. The reducing agent comprises one of MBR3H, MH, M naphthalides, and polyalcohol; wherein R comprises one of H and an alkyl group, wherein M comprises one of Li, Na, and K. Long chain alkyl diols, and alkyl alcohol, can be used as a co-surfactant or a co-reducing agent to facilitate nanoparticle growth and separation.

Abstract: Assistive motion data processing and/or button data processing is performed in an adapter on user inputted variable data produced by a pointing device prior to communication to a computer. This processing may include one or more of processing to filter coordinate deviations from a desired path caused by unintended movements of the pointing device; removal of unintentional rapid button transitions of the pointing device; look-back processing to correct for unintentional pointer coordinate motion induced by operation of buttons on the pointing device; and detection of button double-clicks using relaxed requirements on motion and timing. The adapter's processing is transparent to the computer. Provision for user input of selected parameters is provided, as well as switching to allow for user deactivation of the adapter for conventional use of the pointing device.

Abstract: A method and structure for a d-wave qubit structure includes a qubit disk formed at a multi-crystal junction (or qubit ring) and a superconducting screening structure surrounding the qubit. The structure may also include a superconducting sensing loop, where the superconducting sensing loop comprises an s-wave superconducting ring. The structure may also include a superconducting field effect transistor.

Abstract: A structure and method of forming a fully planarized polymer thin-film transistor by using a first planar carrier to process a first portion of the device including gate, source, drain and body elements. Preferably, the thin-film transistors made with all organic materials. The gate dielectric can be a high-k polymer to boost the device performance. Then, the partially-finished device structures are flipped upside-down and transferred to a second planar carrier. A layer of wax or photo-sensitive organic material is then applied, and can be used as the temporary glue. The device, including its body area, is then defined by an etching process. Contacts to the devices are formed by conductive material deposition and chemical-mechanical polish.

Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.

Abstract: Disclosed is a method for forming an alignment layer for use in a liquid crystal display cell. The present invention includes a method of determining ion beam source operation parameters to provide a twist angle that is less than a predetermined maximum twist angle. The present invention also discloses a method for forming an improved liquid crystal display cell and an improved liquid crystal display.

Abstract: It is an object of the present invention to provide the liquid crystal display (LCD) device with a structure which can prevent the light of a back light from being passing through a bonding region, and can prevent the TFTs of the pixel regions from being damaged by the accumulated electrostatic charges, during the handling of each discrete LCD panel, the rubbing process of the alignment layer on the lower glass substrate 1, the assembling process of the LCD panels, and the handling of the completed tiling panel. The present invention is directed to a LCD device comprising a first LCD panel and a second LCD panel; wherein one edge of the first LCD panel is positioned in proximity and adjacent to one edge of the second LCD panel; and wherein a light shielding and electrically conductive adhesive bonds the one edge of the first LCD panel and the one edge of the second LCD panel.

Abstract: The present invention provides a method of preparing a Si-based metal-insulator-semiconductor (MIS) transistor which prevents the polycrystalline grains of the gate conductor from getting significantly larger by reducing the thermal budget of the sidewall oxidation process. The thermal budget of the inventive sidewall oxidation process is reduced one or two orders of magnitude over conventional prior art sidewall oxidation processes by utilizing atomic oxygen as the oxidizing ambient. The present invention also provides Si-based MIS transistors having a gate conductor having grain sizes of about 0.1, preferably 0.05, &mgr;m or less.

Abstract: The invention provides a method and related apparatus to link and/or pattern self-assembled first objects to a second object. Each of the first object (e.g., a nanoparticle) can be embedded in a mobile binder (i.e., a stabilizer). The invention applies energy to the first object and stabilizer, links this first object to the second object, and provides a controlled linkage of the first object with respect to the second object. Applying this procedure to many such objects results in a larger areal arrangement of these linked objects. An appropriate solvent may be used to remove non-linked objects, yielding a patterned array. Thermal annealing can be applied to control the physical and chemical properties of the array.

Abstract: A method and structure for an improved DRAM (dynamic random access memory) dielectric structure, whereby a new high-k material is implemented for both the support devices used as the gate dielectric as well as the capacitor dielectric. The method forms both deep isolated trench regions used for capacitor devices, and shallow isolated trench regions for support devices. The method also forms two different insulator layers, where one insulator layer with a uniform high-k dielectric constant is used for the deep trench regions and the support regions. The other insulator layer is used in the array regions in between the shallow trench regions.

Abstract: A method of manufacturing a color liquid crystal display element. The method includes the steps of: forming coloring layers composed of a plurality of colors on a transparent substrate on which a thin film transistor structure, a gate line and a data line are formed; forming a transparent conductive film over the entire transparent substrate on which the coloring layers are formed; coating the entire surface of the transparent conductive film with a negative resist; exposing the negative resist to a light using the gate line and the data line as a photomask, the light being emitted from a light source facing a back side of the transparent substrate, the light substantially having wavelength bands excluding 390 nm to 440 nm; developing and baking the exposed negative resist; and etching and removing the transparent conductive film in a portion where the negative resist is removed.

Abstract: A structure and method of forming an integrated circuit (e.g., field effect transistor) having a buried Mott-insulated oxide channel includes depositing source and drain electrodes over a substrate forming a Mott transition channel layer over the substrate and electrodes, forming an insulator layer over the Mott transition channel layer, forming source and drain contacts through the insulator layer (such that the source and drain contacts are electrically connected to the Mott transition channel layer) and forming a gate electrode over the insulator layer between the source and drain contacts.

Abstract: Methods and systems for detecting and correcting for undesirable vibrations impacting the servo systems in data storage devices. A detection technique is provided wherein a detection filter is configured to scan a position signal of the servo system across a range of frequencies, and, at each respective scanned frequency, record an amplitude associated therewith. The recorded amplitudes are examined to determine whether any exceed a threshold, thereby locating a peak frequency of the vibration. Using the detected peak frequency of the vibration, a corrective filter is configured to operate about the peak frequency of vibration, thereby reducing its impact on the position signal in the servo system.

Abstract: A process of forming a high-k dielectric in an integrated circuit structure is disclosed. The process cleans a substrate to remove residual organic materials and strip native oxide from the surface of the substrate. Next, the process introduces precursors on the substrate in molar ratios consistent with formation of dielectric glass films. Following that, the process oxidizes the precursors, heats the precursors, and cools the precursors at a rate that avoids crystallization of the precursors.

Abstract: A liquid crystal display panel part group composed of a plurality of panel parts such as an array cell, a optical system sheet family, a light guide plate, a lamp reflector, and a lamp, and a liquid crystal display panel is enveloped in a film for laminating the parts. This film may be provided so as to cover the whole of the liquid crystal display panel part group and the film may have an opening. In order to adjust the positions of the parts, convex and concave portions are provided in the liquid crystal display panel parts.

Abstract: The use of ferrimagnetic materials is proposed for use in magnetic devices. Such magnetic devices include magnetic tunnel junctions (MTJ) which have at least two magnetic layers separated by an insulating barrier layer, wherein at least one of the two magnetic layers is ferrimagnetic. Such MTJ's are used in MRAM (magnetic random access memory) structures. Where the magnetic device is a magnetic sensor, it preferably includes a layer that comprises a ferrimagnetic material separated from another magnetic layer by a barrier layer and the magnetizations of the magnetic layer are oriented at an angle to one another.

Abstract: The invention is embodied in a wireless stylus that incorporates, for example, an infrared emitter for communicating with a receiver associated with a computer. The stylus is provided with push-buttons near its tip that can be actuated by the user during the course of pointing the stylus at a touch screen location. Accordingly, by the combined actuation of the touch screen and a concurrent actuation of one or more of the push buttons, a mouse input to the computer is accomplished.

Abstract: A method and system are disclosed for adjusting the threshold in MOS devices, in particular for devices used in DRAM sense amplifiers. The effects of process and temperature variations on the threshold are compensated by a back-bias voltage. A comparison of an indicating voltage and a reference voltage is used to generate the back-bias voltage. The direction of back-bias voltage may be either in the backward, or in the forward bias direction.