Abstract: The present invention relates to a positive electrode active material comprising a lithium-containing composite oxide containing nickel with an oxidation state of 2.0 to 2.5 and manganese with an oxidation state of 3.5 to 4.0, the oxidation state determined by the shifts of energy at which absorption maximum is observed in the X-ray absorption near-K-edge structures, and to a non-aqueous electrolyte secondary battery using the same, the positive electrode active material being characterized in having a high capacity, a long storage life and excellent cycle life.

Abstract: The present invention provides von Willebrand Factor-polymer conjugates and Factor VIII-polymer conjugates, each having a releasable linkage. Methods of making conjugates, methods for administering conjugates, are also provided.

Abstract: A lightweight beam may have a triangular prism core and a triaxial fabric cover wrapped around the core, with at least one rod proximate an apex of the core. The rod may extend substantially parallel to a centerline of the core. Multiple lightweight beams may be joined to form a larger lightweight structure.

Abstract: A secondary battery charge control method includes: a charge control step of executing charging by supplying a charge current to a secondary battery; a charge information acquisition step of acquiring information relating to the charging executed in the charge control step; a storage step of storing the information acquired in the charge information acquisition step as charge data; and a charge inhibition determination step of determining whether to inhibit the charging in the charge control step on the basis of the charge data of a previous cycle that have been stored in the storage step when charging in the charge control step is started again after charging in the charge control step has been completed.

Abstract: A semiconductor device includes a gate electrode provided on a semiconductor region with a gate insulating film being interposed therebetween, extension diffusion layers provided in regions on both sides of the gate electrode of the semiconductor region, a first-conductivity type first impurity being diffused in the extension diffusion layers, and source and drain diffusion layers provided in regions farther outside than the respective extension diffusion layers of the semiconductor region and having junction depths deeper than the respective extension diffusion layers. At least one of the extension diffusion layers on both sides of the gate electrode contains carbon.

Abstract: The invention is directed to find a false defect from defect candidates and obtain a threshold with which the false defect can be eliminated by the smallest number of review times. Defect candidates are reviewed and selected as a defect or a false defect. By deleting a defect candidate having a characteristic quantity equal to or less than that of the false defect from a map or displaying it in another sign, the false defect can be determined visually. Since the defect candidate having the characteristic quantity equal to or less than that of the selected false defect is deleted from the map or displayed in another sign, the defect candidates unnecessary to set a threshold are not reviewed. The number of defect candidates to be reviewed can be largely reduced as compared with that in the conventional technique. Further, by repeating the above work, the threshold is automatically calculated, and an inspection result map with the threshold is displayed, so that a re-inspection is unnecessary.

Abstract: Axisymmetric solid of revolution derivable from section at FIG. 5 is generally toroidal with electric current(s) in windings 110, 160 preferably flowing circumferentially along major circle(s) during power coupling device operation. Current(s) in windings 110, 160; current(s) in half-shields 120, 170; and the volume of space swept out by shield airgap(s) 101 emerge from plane of paper perpendicularly at FIG. 5 but as these emerge therefrom they curve to follow toroidal major circle(s). Cores 115, 165 preferably shunt and align magnetic flux such that magnetic field lines escape therefrom primarily only in region(s) of core airgap(s) and such that magnetic flux loops lie in planes of toroidal minor circle(s).

Abstract: The chromatic dispersion of an optical component is measured with high accuracy using a simple set-up, which includes a pump light source, a probe light source, and a measuring means. Pump light having a wavelength ?pump and probe light having a wavelength ?probe is propagated through an optical component, with the wavelength ?probe being apart from the wavelength ?pump by a given frequency. The generation efficiency of the idler light with respect to the wavelength ?pump is calculated by measuring the power of idler light having a wavelength ?idler output from the optical component, and by seeking the pump light wavelength for making the generation efficiency a local extreme value, the chromatic dispersion of the optical component is calculated from the result of calculation of phase mismatch among the pump light wavelength having such wavelength as sought, the corresponding probe light wavelength, and the corresponding the idler light wavelength.

Abstract: A semiconductor device which is designed based on RDR, suppresses the occurrence of a trouble at the boundary between an active region and a power wire and therearound and is small in size and highly integrated. The semiconductor device includes a first conductive impurity region for functional elements which is formed over the main surface of a semiconductor substrate and a second conductive impurity region for power potential to which power potential is applied in at least one standard cell. It also includes insulating layers which are formed over the main surface of the semiconductor substrate and have throughholes reaching the main surface of the semiconductor substrate, and a conductive layer for contact formed in the throughholes of the insulating layers.

Abstract: A solid capacitor according to an aspect of the invention may include: a capacitor device having an anode lead wire extending from one side thereof; a case molding the capacitor device and exposing the anode lead wire to the outside thereof; cathode and anode lead frames exposed on the outside the case and electrically connected to the capacitor device; a reinforcement interposed in the case between the anode lead wire and the anode lead frame so as to support the capacitor device and electrically connecting the anode lead wire and the anode lead frame; and a resin shielding part applied to the exposed portion of the anode lead wire to prevent the infiltration of foreign substances through the anode lead wire.

Abstract: There is provided a multilayer ceramic capacitor, including: a multilayer body in which a plurality of dielectric layers are stacked in a thickness direction; and inner electrode layers formed within the multilayer body and including first and second inner electrodes disposed to be opposed to each other; wherein a ratio (MA1/CA1) of MA1 to CA1 is between 0.07 and 0.20, wherein CA1 represents an area of the multilayer body in a cross section of the multilayer body taken in a length and thickness direction, and MA1 represents an area of a first margin part in the cross section of the multilayer body taken in the length and thickness direction, the first margin part being a portion of the multilayer body, other than a first capacitance forming part thereof in which the first and second inner electrodes overlap in the thickness direction.

Abstract: The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post passivation. The thick, wide metal lines may be used for long signal paths and can also be used for power buses or power planes, clock distribution networks, critical signal, and re-distribution of I/O pads for flip chip applications. Photoresist define electroplating, sputter/etch, or dual and triple damascene techniques are used for forming the metal lines and via fill.

Abstract: In displaying image data received from a camera module on a display device such as a view finder, image data having a size suited for display from an image size conversion circuit is displayed via line memories included in a signal-for-display generation circuit. Vertical synchronization in an image data storage including these line memories is established by initializing a reading address in accordance with a frame head pixel indication and a reading completion indication of one line in the line memories. It is possible to reduce power consumption of an image display system for displaying an image of a imaging subject.

Abstract: A first and second gate electrodes are formed on a first and second active regions, respectively. The first and second gate electrodes have a first and second metal-containing conductive films, respectively. The first and second metal-containing conductive films are formed on the isolation region for segmenting the first and second active regions to be spaced apart from each other. A third metal-containing conductive film, which is a part of each of the first and second gate electrodes, is continuously formed from a top of the first metal-containing conductive film through a top of the isolation region to a top of the second metal-containing conductive film. The third metal-containing conductive film is in contact with the first and second metal-containing conductive films.

Abstract: A current-mode filter includes a first, a second, and a third transistor having the same channel polarity. The drain of the first transistor is connected to the source of the second transistor functioning as a gate grounded circuit. The drain of the second transistor is connected to the gates of the first and third transistors. A first and a second capacitive element are connected to the gate and drain of the first transistor. The current source supplies a bias current to each of the first and second transistors. The drain of the first transistor is used as an input terminal. An output signal is extracted from a drain current of the third transistor. Therefore, only one transconductance adjustment circuit is enough.

Abstract: A hinge enabling a plurality of hold-stay members to automatically lock when the door is fully open, increasing the durability of the hinge, and enabling easy release of the hold-stay members. A hinge includes a one-side hinge plate, a plurality of opposing-side hinge plate portions provided along the lengthwise direction of the hinge plate and supported by it, and an open-angle limiting mechanism for stopping, at a specific angle, opening movement of the opposing-side hinge plate portions.

Abstract: The present invention relates to a disc chucking apparatus having claws that horizontally move and provide elasticity to improve performance in centering and chucking a disc. The disc chucking apparatus includes: a centering base to which an inner circumferential surface of a disc is fixed; a plurality of chuck chips arranged at regular intervals along an outer circumferential surface of the centering base; and a plurality of elastic support parts disposed to be opposite to the chuck chips on the centering base, rotating horizontally when the disc is mounted, and pressing the inner circumferential surface of the disc in an outer diameter direction thereof.

Abstract: Provided is a gauge device that can provide innovativeness to representation during an operation of effect creation, and can improve the marketability and designability. A gauge device 1 is configured to include a display section 2 that displays vehicle information by rotating a pointer needle on a display panel, and an operation section 3 for use to operate various types of functions of the display section 2. Control means is also provided for operating, in response to an input of a predetermined start signal, in a cooperative manner, first illumination means 2d provided for illuminating the display section 2 and second illumination means 3c provided for illuminating the operation section 3 to make those operate a predetermined operation of effect creation. The start signal is an input of turning on or off a power switch.