Abstract: The performance of a semiconductor device including a nonvolatile memory is enhanced. Each of nonvolatile memory cells arranged over a silicon substrate includes: a first n-well; a second n-well formed in a place different from the place thereof; a selection transistor formed in the first n-well; and an electric charge storage portion having a floating gate electrode and a storage portion p-well. The floating gate electrode is so placed that it overlaps with part of the first n-well and the second n-well. The storage portion p-well is placed in the first n-well so that it partly overlaps with the floating gate electrode. In this nonvolatile memory cell, memory information is erased by applying positive voltage to the second n-well to discharge electrons in the floating gate electrode to the second n-well.

Abstract: The present invention is directed to realize high-speed operation and low latency of a semiconductor storage device employing the QDR method. A memory cell array, a first buffer, a second buffer, a first circuit, a second circuit, a first DLL circuit, and a second DLL circuit are provided. The first DLL circuit generates a first internal clock signal so as to reduce a phase difference between a first clock signal fetched via the first buffer and the first internal clock signal transmitted to the first circuit. The second DLL circuit generates the second internal clock signal so as to reduce a phase difference between the second clock signal fetched via the second buffer and the second internal clock signal transmitted to the second circuit. With the configuration, input setup and hold time can be shortened, and the frequency of the clock signal can be further increased.

Abstract: A problem associated with n-channel power MOSFETs and the like that the following is caused even by relatively slight fluctuation in various process parameters is solved: source-drain breakdown voltage is reduced by breakdown at an end of a p-type body region in proximity to a portion in the vicinity of an annular intermediate region between an active cell region and a chip peripheral portion, arising from electric field concentration in that area. To solve this problem, the following measure is taken in a power semiconductor device having a superjunction structure in the respective drift regions of a first conductivity type of an active cell region, a chip peripheral region, and an intermediate region located therebetween: the width of at least one of column regions of a second conductivity type comprising the superjunction structure in the intermediate region is made larger than the width of the other regions.

Abstract: The semiconductor IC device for display control disclosed herein aims to achieve a higher rate of memory access cycles without enhancing the current carrying capability of the memory device. The IC device is provided with a memory cell array capable to store display data, peripheral circuits to enable writing and reading of display data, and a control circuit which is able to control read and write operations from/to the memory cell array. The memory cell array comprises a plurality of memory blocks. The control circuit comprises a control logic which enables parallel processing of write operations in such a manner that, before completion of writing of data to one of the memory blocks, writing of data to another memory block is started. Write cycles are shortened by the parallel processing of write operations.

Abstract: A backlight unit of thin-type comprises: at least one or more light source(s); plural numbers of light guide plates, each of which is configured to guide and irradiate the light of the light source(s) to a side of a liquid crystal panel; and a chassis, on which the light source(s) and the light guide plates are fixed, thereby being constructed by aligning the light guide plates, wherein the following conditions are satisfied: 15.0 mm>h, 20°???60° when assuming that a distance from an irradiation surface of the backlight unit to the light guide plate is “h”, and that an angle indicative of a half-value light intensity of a light emitting from a light emission surface of the light guide plate, thereby providing a video of high picture quality, and there is also provided a video display apparatus applying the same therein.

Abstract: A semiconductor photodiode includes a semiconductor substrate; a first conduction type first semiconductor layer formed above the semiconductor substrate; a high resistance second semiconductor layer formed above the first semiconductor layer; a first conduction type third semiconductor layer formed above the second semiconductor layer; and a second conduction type fourth semiconductor layer buried in the second semiconductor layer, in which the fourth semiconductor layer is separated at a predetermined distance in a direction horizontal to the surface of the semiconductor substrate.

Abstract: Characteristics of a semiconductor device having a FINFET are improved. The FINFET has: a channel layer arranged in an arch shape on a semiconductor substrate and formed of monocrystalline silicon; a front gate electrode formed on a part of an outside of the channel layer through a front gate insulating film; and a back gate electrode formed so as to be buried inside the channel layer through a back gate insulating film. The back gate electrode arranged inside the arch shape is arranged so as to pass through the front gate electrode.

Abstract: The yield of semiconductor devices is improved. In an upper die of a resin molding die including a pair of the upper die and a lower die, by lengthening the radius of the cross section of an inner peripheral surface of a second corner part facing an injection gate of a cavity more than that of the other corner part, a void contained in a resin in resin injection can be pushed out into an air vent without allowing the void to remain in the second corner part of the cavity. Consequently, the occurrence of the void in the cavity can be prevented and then the occurrence of the appearance defect of the semiconductor device can be prevented.

Abstract: The present invention provides a non-insulated type DC-DC converter having a circuit in which a power MOS•FET for a high side switch and a power MOS•FET for a low side switch are connected in series. In the non-insulated type DC-DC converter, the power transistor for the high side switch, the power transistor for the low side switch, and driver circuits that drive these are respectively constituted by different semiconductor chips. The three semiconductor chips are accommodated in one package, and the semiconductor chip including the power transistor for the high side switch, and the semiconductor chip including the driver circuits are disposed so as to approach each other.

Abstract: p-type wells are provided within an n-type embedded well of a semiconductor substrate lying in an area for forming a flash memory, in a state of being isolated from one another. A capacitance section, a data write/erase charge injection/discharge section and a data read MIS•FET are disposed in each of the p-type wells. The capacitance section is disposed between the data write/erase charge injection/discharge section and the data read MIS•FET. In the data write/erase charge injection/discharge section, writing and erasing of data by an FN tunnel current at a channel entire surface are performed.

Abstract: The present invention achieves higher precision and lower power consumption by reducing semiconductor chip occupation area. A semiconductor integrated circuit which can be mounted on an optical disk device has: a wobble signal generating circuit capable of receiving first, second, third, and fourth light reception output signals A, B, C, and D of a light receiving element in an optical pickup and detecting a wobble in a recordable disk; a differential phase detection signal (DPD) generating circuit for tracking an unrecordable disk; and two A/D converters and an arithmetic circuit.

Abstract: The present invention realizes a semiconductor integrated circuit device for driving liquid crystal (liquid crystal control driver IC) capable of easily setting drive conditions and the like according to specifications of a liquid crystal display to be used. An electrically-programmable nonvolatile memory circuit (EPROM) or an electrically erasable and programmable nonvolatile memory circuit (EEPROM) is provided in a semiconductor integrated circuit device for driving a liquid crystal display, and setting information is stored in the memory circuit. The memory circuit is constructed by a normal device which can be formed in the same process as a semiconductor manufacturing process of forming devices of other circuits.

Abstract: To provide a technique capable of improving reliability of a semiconductor device having a nonvolatile memory cell by suppressing the reduction of the drive force. A memory cell is configured by a selection pMIS having a selection gate electrode including a conductive film exhibiting a p-type conductivity and a memory pMIS having a memory gate electrode including a conductive film exhibiting a p-type conductivity, and at the time of write, hot electrons are injected into a charge storage layer from the side of a semiconductor substrate 1 and at the time of erase, hot holes are injected into the charge storage layer from the memory gate electrode.

Abstract: A transceiver includes an oscillator and a plurality of communication blocks. Each of the communication blocks includes frequency dividers and mixers. Frequency dividing number of the frequency divider included in one communication block is set to an even-numbered integer, and transmission local signals supplied from the frequency dividers to the mixer become quadrature signals having a phase difference of 90 degrees. The frequency dividing number of another frequency divider in the another communication block is set to a non-integer, and communication local signals supplied from the frequency divider to the mixers become non-quadrature signals having a phase difference at a predetermined offset angle from 90 degrees. The transceiver further includes a converting unit for giving a compensation offset amount having almost the same absolute value and having a polarity opposite to that of the offset angle to communication analog signals related to the mixer of the another communication block.

Abstract: Provided is a method of promoting a deposition of semiconductor crystal nuclei on an insulating film such as a silicon oxide film even at a low temperature of 450° C. or lower in a reactive thermal CVD method. As one means thereof, a first semiconductor film is formed on an insulating substrate, and then semiconductor crystal nuclei are formed on parts of the first semiconductor film and simultaneously the first semiconductor film other than that in forming regions of the semiconductor crystal nuclei and their peripheries is removed by etching. Thereafter, a second semiconductor film is formed with using the semiconductor crystal nuclei as seeds.

Abstract: AVS (Adaptive Voltage Scaling) technique, by which variability and uncertainty are both taken into account. In the system arranged for AVS technique, a detection circuit optimum for each type of process variation is set. Examples of the detection circuit so arranged include a first measurement circuit for detection of variability, which produces a relative value with respect to the gate delay mean value, and a second measurement circuit for detection of uncertainty, which produces a relative value related to the gate delay standard deviation. The first and second measurement circuits are provided separately from each other. The control information for deciding the supply voltage is prepared based on relative values produced by the detection circuits. When preparing the control information, reference is made to e.g. a table data.

Abstract: A data processor whose level of operation parallelism is enhanced by composing floating-point inner product execution units to be compatible with single instruction multiple data (SIMD) and thereby enhancing the operation processing capability is made possible. An operating system that can significantly enhance the level of operation parallelism per instruction while maintaining the efficiency of the floating-point length-4 vector inner product execution units is to be implemented. The floating-point length-4 vector inner product execution units are defined in the minimum width (32 bits for single precision) even where an extensive operating system becomes available, and compose the inner product execution units to be compatible with SIMD. The mutually augmenting effects of the inner product execution units and SIMD-compatible composition enhances the level of operation parallelism dramatically.

Abstract: Provided are a variable magnification optical system for making it possible to properly set a variable magnification ratio of each lens group by properly setting a variable magnification ratio of a fifth lens group, and an optical apparatus with the variable magnification optical system, and a method for manufacturing the variable magnification optical system. The optical apparatus has first to sixth lens groups (G1) to (G6) in order from an object, wherein the fifth lens group (G5) satisfies the following conditional expression: 0.65<|?5T/?5W|<3.20, where ?5T denotes the lateral magnification at the telephoto end state, and ?5W denotes the lateral magnification at the wide-angle end state.

Abstract: A semiconductor integrated circuit device includes a first high-speed serial interface circuit which has one differential serial data channel and a second high-speed serial interface circuit which has a plurality of differential serial data channels, the first high-speed serial interface circuit performs interface with the outside for control information, and a control circuit performs an internal operation on the basis of the control information. Both of the high-speed serial interface circuits share a RAM for storage of display data information. Whether the data information to be supplied to the RAM is received by using the first high-speed serial interface circuit or the second high-speed serial interface circuit is determined by the control circuit in accordance with the control information that is input to the first high-speed serial interface circuit.

Abstract: The variation in the contact pressures of the plurality of contact terminals to the plurality of chip electrodes is decreased. A thin-film sheet (first sheet) includes: a principal surface (contact-terminal formation surface) on which a plurality of contactors (contact terminals) are formed; and a rear surface positioned on an opposite side to the principal surface. Also, in the thin film sheet, a plurality of wirings and dummy wiring are arranged between the principal surface and the rear surface. A slit formed of an opening portion penetrating from the principal surface of the thin-film sheet to the rear surface thereof is formed along the wiring between the dummy wiring and the contactor arranged at an end of a contactor group (first contact terminal group) in which the plurality of contactors are aligned.