Abstract: In order to prevent the contamination of wafers made of a transition metal in a semiconductor mass production process, the mass production method of a semiconductor integrated circuit device of the invention comprises the steps of depositing an Ru film on individual wafers passing through a wafer process, removing the Ru film from outer edge portions of a device side and a back side of individual wafers, on which said Ru film has been deposited, by means of an aqueous solution containing orthoperiodic acid and nitric acid, and subjecting said individual wafers, from which said Ru film has been removed, to a lithographic step, an inspection step or a thermal treating step that is in common use relation with a plurality of wafers belonging to lower layer steps (an initial element formation step and a wiring step prior to the formation of a gate insulating film).

Abstract: A semiconductor device capable of improving the driving power and a manufacturing method therefor are provided. In a semiconductor device, a gate structure formed by successively stacking a gate oxide film and a silicon layer is arranged over a semiconductor substrate. An oxide film is arranged long the lateral side of the gate structure and another oxide film is arranged along the lateral side of the oxide film and the upper surface of the substrate. In the side wall oxide film comprising these oxide films, the minimum value of the thickness of the first layer along the lateral side of the gate structure is less than the thickness of the second layer along the upper surface of the substrate.

Abstract: There is provided an output stage circuit including such MOSTs (M) that when their gates and sources are respectively set to an equal voltage, subthreshold leakage currents substantially flow between their drains and sources, wherein upon its deactivation, a voltage is applied to the gate of each of the MOSTs (M) in such a manner than a reverse bias is applied between the gate and source of the MOST (M). That is, when the MOST (M) is of a p channel type, a voltage higher than that of a p type source is applied to its gate. When the MOST (M) is of an n channel type, a voltage lower than that of an n type source is applied to its gate. Upon activation of the circuit, the MOST is held in a reverse bias state or controlled to a forward bias state according to an input voltage. A CMOS circuit and a semiconductor device can be realized each of which is small in leakage current even though its threshold voltage is low and which is operated at high speed and with a small voltage amplitude.

Abstract: The present invention provides a molding die and a control method thereof aimed at shortening cycle time from heating to cooling of a molding cavity of the die with a simple and inexpensive configuration. In a molding die equipped with a molding cavity to mold a base material, a magnetic die material is used for the molding cavity, cooling means to feed a refrigerant is installed inside the molding cavity along a molding face and heating means by high-frequency induction is installed around the cooling means, and the molding cavity is alternately heated and cooled repeatedly by the heating means and the cooling means when the base material is molded with the molding cavity. Here, the cooling means includes a tubular body installed in the molding cavity, feeds a refrigerant when the molding cavity is cooled, and is in a hollow state of not containing the refrigerant when the molding cavity is heated.

Abstract: A base insulating film containing hafnium and oxygen is formed on a silicon oxide (SiO2) film formed on a main surface of a substrate. Subsequently, a metal thin film thinner than the base insulating film and made of only a metal element is formed on the base insulating film, and a protective film having humidity resistance and oxidation resistance is formed on the metal thin film. Then, by diffusing the entire metal element of the metal thin film into the base insulating film in a state of having the protective film, a mixed film (high dielectric constant film) thicker than the silicon oxide film and having a higher dielectric constant than silicon oxide and containing hafnium and oxygen of the base insulating film and the metal element of the metal thin film is formed on the silicon oxide film.

Abstract: A method of manufacturing an outer retainer for a one-way clutch having an outward flange at one side edge thereof involves punching out a part of an annular portion having the outward flange by sliding a punch toward an axis of the outer retainer substantially in an axially inner direction from a retainer outer periphery-sided curve portion of the outward flange to a retainer inner periphery-sided curve portion thereof in a way that uses a die and the punch.

Abstract: There is provided a semiconductor device having a reduced number of external terminals allocated for address input to receive access from outside, while realizing a high-speed response to an access from outside. The semiconductor device employs, in order to allow other external devices to directly access resources it possesses in its own address space, in an external interface circuit, external terminals which input a part of the address signal required for access from outside, a supplementary register which supplements the upper portion of address information that has been input from the external terminals, a mode register accessible from outside, and an address control circuit which generates an address signal to access the address space in a form based on information input from the external terminals, required supplementary information, and mode information of the mode register.

Abstract: An improvement is provided in a manufacturing yield of a semiconductor device including transistors in which gate insulating films have different thicknesses. After a high-breakdown-voltage insulating film is formed over a silicon substrate, a surface of the high-breakdown-voltage insulating film is abraded for a reduction in the thickness thereof so that a middle-breakdown-voltage insulating film is formed to be adjacent to the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed by a thermal oxidation method so as to extend from an inside of the main surface of the silicon substrate to an outside thereof. The middle-breakdown-voltage insulating film is formed so as to be thinner than the high-breakdown-voltage insulating film.

Abstract: A highly-reliable, highly-integrated large-capacity phase-change memory is achieved. For this purpose, for example, memory tiles MT0, MT1 are provided respectively at points of intersection of global bit line GBL0 and global word lines GWL00B, GWL01B. Word lines WL000 of MT0, MT1 are commonly connected to an output from a word-line driving circuit WD0 which is controlled by GWL00B, and word lines WL001 of MT0, MT1 are commonly connected to an output from a word-line driving circuit WD1 controlled by GWL01B. For example, when WD0 is activated in accordance with a rewrite operation, an output from WD0 is connected to GBL0 via any one of four memory cells MC00, MC01 connected to WL000 of MT0, MT1.

Abstract: The present invention provides a zoom lens ZL comprising a first lens group G1 having positive refractive power, a second lens group G2 having negative refractive power, a third lens group G3 having positive refractive power, and a fourth lens group G4 having positive refractive power, the first lens group G1 including a negative meniscus lens L11 and a positive meniscus lens L12, the second lens group G2 including a negative meniscus lens L21, a biconcave negative lens L22 and a positive meniscus lens L23, and the fourth lens group G4 including one positive lens L41, and the refractive indexes of at least three lenses in the zoom lens ZL being greater than 1.9.

Abstract: The present invention is directed to reduce array area and power consumption in a content addressable memory. A comparator for performing a match determination and a size determination is provided commonly for plural entries each storing data to be retrieved. Each entry includes data storage cells for storing data and mask cells for storing mask bits. The number of mask cells is smaller than that of the data storage cells. Search data is transmitted to the comparator via a search data bus. One of the entries is selected according to a predetermined rule. The comparator decodes the mask bits, generates a mask instruction signal, and performs match comparison and size comparison between the search data and data to be retrieved which is stored in the selected entry.

Abstract: Chip cracking that occurs when a dicing step using a blade is carried out to acquire semiconductor chips with the reduced thickness of a semiconductor wafer is suppressed. When the semiconductor wafer is cut at the dicing step for the semiconductor wafer, a blade is advanced as follows: in dicing in a first direction (Y-direction in FIG. 12) along a first straight line, the blade is advanced from a first point to a second point. The first point is positioned in a first portion and the second point is opposed to the first point with a second straight line running through the center point of the semiconductor wafer in between.

Abstract: An objective lens to be fitted into a fitting hole of a nosepiece of a microscope includes an imaging lens that is composed of a plurality of lens groups, and a lens barrel that holds the imaging lens. The lens barrel is formed with a fitting portion that is fitted to the fitting hole of the nosepiece and provided at an outer circumference of a tip portion side away by a given distance from the tip portion where a first lens group in the imaging lens is held, and a mount surface that comes into contact with a contact surface of the fitting hole of the nosepiece upon fitting at the fitting portion. The nosepiece is equipped with the objective lens. The inverted microscope is equipped with the nosepiece fitting the objective lens.

Abstract: Of three chips (2A), (2B), and (2C) mounted on a main surface of a package substrate (1) in a multi-chip module (MCM), a chip (2A) with a DRAM formed thereon and a chip (2B) with a flash memory formed thereon are electrically connected to wiring lines (5) of the package substrate (1) through Au bumps (4), and a gap formed between main surfaces (lower surfaces) of the chips (2A), (2B) and a main surface of the package substrate (1) is filled with an under-fill resin (6). A chip (2C) with a high-speed microprocessor formed thereon is mounted over the two chips (2A) and (2B) and is electrically connected to bonding pads (9) of the package substrate (1) through Au wires (8).

Abstract: The present invention provides a technology capable of reducing an area occupied by a nonvolatile memory while improving the reliability of the nonvolatile memory. In a semiconductor device, the structure of a code flash memory cell is differentiated from that of a data flash memory cell. More specifically, in the code flash memory cell, a memory gate electrode is formed only over the side surface on one side of a control gate electrode to improve a reading speed. In the data flash memory cell, on the other hand, a memory gate electrode is formed over the side surfaces on both sides of a control gate electrode. By using a multivalued memory cell instead of a binary memory cell, the resulting data flash memory cell can have improved reliability while preventing deterioration of retention properties and reduce its area.

Abstract: A computer system and method for determining a survivability aspect control signal for an aircraft is disclosed. The computer system can include a processor and a memory including software instructions adapted to cause the computer system to perform a series of steps. The steps can include providing a plurality of signature exposure models, each signature exposure model corresponding to a threat sensor and including a threat sensor characteristic and a threat operational characteristic. A portion of a mission can be selected along with one or more of the models based on the selected mission portion. The steps can include calculating a signature exposure index based on the one or more selected models and the selected mission portion and providing a survivability aspect control signal based on the signature exposure index.

Abstract: In an insulated-gate type semiconductor device in which a gate-purpose conductive layer is embedded into a trench which is formed in a semiconductor substrate, and a source-purpose conductive layer is provided on a major surface of the semiconductor substrate, a portion of a gate pillar which is constituted by both the gate-purpose conductive layer and a cap insulating film for capping an upper surface of the gate-purpose conductive layer is projected from the major surface of the semiconductor substrate; a side wall spacer is provided on a side wall of the projected portion of the gate pillar; and the source-purpose conductive layer is connected to a contact region of the major surface of the semiconductor substrate, which is defined by the side wall spacer.

Abstract: Reliability of a semiconductor element and its product yield are improved by reducing variations in the electrical characteristic of a metal silicide layer. After forming a nickel-platinum alloy film over a semiconductor substrate, by carrying out a first thermal treatment at a thermal treatment temperature of 210 to 310° C. using a heater heating device, the technique causes the nickel-platinum alloy film and silicon to react with each other to form a platinum-added nickel silicide layer in a (PtNi)2Si phase. After removing unreacted nickel-platinum alloy film, the technique carries out a second thermal treatment having the thermal treatment temperature higher than that of the first thermal treatment to form the platinum-added nickel silicide layer in a PtNiSi phase. The temperature rise rate of each thermal treatment is set to 10° C./s or more.