Abstract: A method for moving a rights object (RO) between devices, a method of using a content object based on the moving method, and devices using the methods are provided. The moving method includes performing authentication between two devices; securing a connection between the devices; and communicating the rights object between the two devices. The using method includes two devices communicating with each other, the first device having use permission of content objects and the second device including the content objects and corresponding rights objects; the first device searching for the content objects; and the first device using the content object that was found. The device includes an authentication module to authenticate another device; a security formation module to secure a connection for the other device; and a transceiving module which communicates a rights object for which the connection has been secured.

Abstract: Provided are a semiconductor memory device and a method of driving the device which can improve a noise characteristic of a voltage signal supplied to a memory cell of the device. The semiconductor memory device includes a first semiconductor chip and one or more second semiconductor chips stacked on the first chip. The first chip includes an input/output circuit for sending/receiving a voltage signal, a data signal, and a control signal to/from an outside system. The one or more second semiconductor chips each include a memory cell region for storing data. The second semiconductor chips receive at least one signal through one or more signal paths that are formed outside the input/output circuit of the first chip.

Abstract: A PCB (printed circuit board) for manufacturing a semiconductor package. The PCB includes a plurality of semiconductor package unit frames; a scribe lane dividing the plurality of semiconductor package unit frames; and a printed circuit pattern for plating directly connected to a plurality of bond fingers on the semiconductor package unit frames and disposed to cross the scribe lane between adjacent semiconductor package unit frames.

Abstract: An integrated circuit device having multiple communication modes is provided. The integrated circuit device includes a transceiver coupled to first and second data lines. The integrated circuit device further includes a voltage control circuit. The voltage control circuit determines whether or not an external device is connected to the integrated circuit device. In the case where the external device is connected to the integrated circuit device, the voltage control circuit controls the voltage of the first data line so as to cause the external device to not recognize the integrated circuit device for a predetermined time.

Abstract: A semiconductor memory device is disclosed. The semiconductor device includes a memory cell array, a clock signal generator configured to receive an external clock signal from the outside of the memory device and output an internal clock signal, and a data output unit configured to receive an internal data signal from the memory cell array and output a read data signal in response to the internal clock signal. The semiconductor memory device also includes a read data strobe unit configured to output a read data strobe signal having a cycle time of n times (n is an integer equal to or more than 2) a cycle time of the internal clock signal, based on the internal clock signal.

Abstract: Provided is a camera module providing EMS shielding, so that electromagnetic waves generated in the camera module are prevented from radiating to the outside and external electromagnetic waves or noise are prevented from flowing into the camera module. The camera module includes: a lens unit comprising at least one lens; an image sensor package including an image sensor chip having an image area where an image is formed in response to light passing through the lens unit; a housing surrounding the lens unit and the image sensor package, wherein the housing is electrically connected to the image sensor package and is formed of a conductive material; and a connection terminal disposed below the image sensor package and electrically connecting the image sensor package and a main board of an electronic device including the camera module.

Abstract: A system includes a memory controller adapted to output address signals, command signals and select signals; a plurality of memory modules; and a plurality of buses each corresponding to one of the memory modules. Each bus is adapted to transmit corresponding ones of the address signals, the command signals, and the select signals to the corresponding memory module. Each of the memory modules includes: a plurality of memory devices; and a register adapted to receive and buffer the corresponding command and address signals transmitted to the memory module, and adapted to transmit the buffered command signal to the memory devices which are to be accessed, in response to the corresponding select signal for accessing the memory devices.

Abstract: Provided is a layout method of junction diodes for preventing damage caused by plasma charge. The layout method includes operations of forming an active layer so as to form a plurality of active regions in a unit layout pattern; forming a gate layer so as to form a plurality of gate regions on the active regions; forming a first conductive type doping region in at least one of the plurality of active regions within a well layer where a second conductive type well region is formed so as to form a first conductive type active region; forming a second conductive type doping region in at least one of the plurality of active regions outside of the second conductive type well region so as to form a second conductive type active region; and forming a second conductive type doping region connected with the gate regions so as to form a junction diode in at least one active region between the first and second conductive type active regions.

Abstract: In a method of forming a chalcogenide compound target, a first powder including germanium carbide or germanium is prepared, and a second powder including antimony carbide or antimony is prepared. A third powder including tellurium carbide or tellurium is prepared. A powder mixture is formed by mixing the first to the third powders. After a shaped is formed body by molding the powder mixture. The chalcogenide compound target is obtained by sintering the powder mixture. The chalcogenide compound target may include a chalcogenide compound that contains carbon and metal, or carbon, metal and nitrogen considering contents of carbon, metal and nitrogen, so that a phase-change material layer formed using the chalcogenide compound target may stable phase transition, enhanced crystallized temperature and increased resistance. A phase-change memory device including the phase-change material layer may have reduced set resistance and driving current while improving durability and sensing margin.

Abstract: A package cutting apparatus includes at least two spindles installed at a sawing robot and cutting a frame including a plurality of packages into packages using cutting bits; a frame loading jig loading the frame so that the frame is cut; and a frame-and-unit picker installed at an orthogonal robot to load and unload the frame on and from the frame loading jig, wherein a state of the cutting bit installed at the spindle is checked.

Abstract: A semiconductor memory device can automatically control signal transmission power on-chip based on a wireless signal transmission. The semiconductor memory device can have a multi-chip stack structure. A power initializing method of the semiconductor memory device can comprise providing a test signal generated by a signal-providing chip to a first chip, checking whether the test signal provided to the first chip has an error, providing the checking result to the signal-providing chip, setting the power of a first signal provided to the first chip according to the checking result, and setting the power of a signal provided to a second chip adjacent to the first chip and close to the signal-providing chip using the power of the first signal.

Abstract: Provided is a semiconductor package apparatus having a redistribution layer. The apparatus includes at least one or more semiconductor chips, a packing part protecting the semiconductor chips, and a support part supporting the semiconductor chips. The apparatus also includes external terminals extending outside the packing part, redistribution layers installed between the semiconductor chips and the support part and including redistribution paths, first signal transmitting units, and second signal transmitting units. The first signal transmitting units transmitting electrical signals generated from the semiconductor chips to the redistribution paths of the redistribution layers, and the second signal transmitting units transmit the electrical signals from the redistribution paths to the external terminals. Therefore, a size and a thickness of the semiconductor package apparatus can be reduced, and processes can be simplified to improve productivity.

Abstract: A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.

Abstract: A Bose-Chaudhuri-Hocquenghem (BCH) error correction circuit and method including storing normal data and first parity data in a memory cell array, the normal data and first parity data forming BCH encoded data; generating second parity data from the stored normal data; comparing the first parity data with the second parity data; and checking for an error in the normal data in response to the comparing.

Abstract: A multi-port semiconductor memory device having variable access paths and a method therefor are provided. The semiconductor memory device includes a plurality of input/output ports; a memory array divided into a plurality of memory areas; and a select control unit to variably control access paths between the memory areas and the input/output ports so that each memory area is accessed through at least one of the input/output ports.

Abstract: A measurement system and a measurement method, which can obtain a measurement value close to a true value considering an overlay measurement error according to a higher order regression analysis model. The measurement system and the measurement method provide a technique for determining optimal positions of shots to be measured using an optimal experimental design. When the regression analysis model and the number of shots to be measured are determined in advance, a method is used for determining an optimal number of shots to be measured according to the regression analysis model and process dispersion using a confidence interval estimating method. A dynamic sampling method is used for dynamically changing the number and positions of shots to be measured according to a change in process features by combining the above two methods.

Abstract: Provided are camera modules capable of effectively shielding electromagnetic (EM) waves and methods of fabricating the same. A method of fabricating a camera module includes, preparing a first wafer including an array of lens units. Then, a second wafer including an array of image sensor CSPs (chip-scale packages) is prepared. Each of the image sensor CSPs includes an image sensor chip corresponding to one of the lens units. The first wafer is stacked on the second wafer. The first wafer and the second wafer are cut to form a trench exposing the top surface of the image sensor chip at the interface between adjacent lens units. The trench is filled with a first material used for forming a housing. The first material and the image sensor chip are cut at the interface between the adjacent lens units.

Abstract: A field effect transistor (FET) and a method for manufacturing the same, in which the FET may include an isolation film formed on a semiconductor substrate to define an active region, and a gate electrode formed on a given portion of the semiconductor substrate. A channel layer may be formed on a portion of the gate electrode, with source and drain regions formed on either side of the channel layer so that boundaries between the channel layer and the source and drain regions of the FET may be perpendicular to a surface of the semiconductor substrate.

Abstract: A storage system is disclosed and related methods of reading/writing data are disclosed. The storage system includes a main data storage medium, and first and second buffers storing data to be stored on the main data storage medium, as well as a controller defining a data I/O path. The data I/O path may be defined in relation to a detected operating state of the main data storage medium.

Abstract: In one embodiment, a semiconductor package includes a first insulating body and a first semiconductor chip having a first active surface and a first back surface opposite the first active surface. The first semiconductor chip is disposed within the first insulating body. The first active surface is exposed by the first insulating body. The first back surface is substantially surrounded by the first insulating body. The semiconductor package includes a post within the first insulating body and adjacent to a side of the first semiconductor chip.