Abstract: An test circuit and method for testing an integrated device having an embedded function and a built-in test circuit for testing the embedded function. The built-in test circuit provides control signals to the embedded function based upon an internal state of the built-in test circuit. The integrated device is tested by comparing the control signals provided to the embedded function to the desired control signals based upon the internal state of the built-in self test circuit to confirm the proper operation of the built-in self test circuit. The internal state of the built-in test circuit is monitored and the control signals provided to the embedded function are monitored. The monitored signals are compared to an expected signal pattern based upon the monitored internal state of the built-in test circuit. An error signal is generated if the comparison determines that the monitored control signals do not correspond to the expected signal pattern.

Abstract: A device isolation trench is formed in a semiconductor substrate by forming spaced apart masking regions on the substrate, leaving an exposed portion of the substrate disposed therebetween. A masking layer is formed on the masking regions and the exposed portion of the substrate. The masking layer and the substrate are then anisotropically etched for an etching time sufficient to remove the masking layer and portions of the substrate disposed between the masking regions and thereby form a device isolation trench in the substrate having rounded edges. Preferably, the step of anisotropically etching includes etching with an etchant that etches the substrate and the masking layer at approximately the same etching rate. More preferably, the substrate is silicon and the masking layer is polysilicon or amorphous silicon. The masking layer may also be high-thermal oxide (HTO) having an etching rate lower than that of the substrate.

Abstract: A method for making an oriented diamond film includes the steps of saturating a surface region of a transition metal substrate, capable of dissolving carbon, with carbon and hydrogen; forming oriented diamond nuclei on the saturated surface region of the substrate; and growing diamond on the oriented diamond nuclei to form the oriented diamond film. It is theorized that the saturation forms transition metal-carbon-hydrogen surface states (Metal.sub.x --C.sub.y --H.sub.z, where x+y+z=1) on the transition metal substrate while suppressing formation of graphite. Diamond may then be deposited onto the oriented diamond nuclei by CVD techniques to thereby form an oriented diamond film on the nondiamond substrate. The nondiamond substrate is preferably a single crystal transition metal capable of dissolving carbon. The transition metal is preferably selected from the group consisting of nickel, cobalt, chromium, magnesium, iron, and alloys thereof.

Abstract: Methods of providing and breeding trees having more easily extractable lignin due to the presence of a cinnamyl alcohol dehydrogenase (Cad) null gene are presented.

Abstract: The present invention involves DNA encoding a mammalian Sp 17 protein, particularly human Sp17 protein, or antigenic peptides which are fragments thereof, along with said antigenic fragments. These proteins and peptides are useful as immunocontraceptive agents and/or for the diagnosis of autoimmune infertility. Avirulent host cells which express the antigenic proteins or peptides and which are useful as immunocontraceptive agents are also disclosed.

Abstract: An integrated circuit memory device includes a memory cell array including a plurality of odd and even numbered subword lines extending therethrough. A predecoder receives a row address and generates a plurality of predecoding signals in response thereto, and a row decoder receives the row address and generates a word line signal in response thereto. A first driver block includes a first plurality of word line drive circuits adjacent the memory cell array wherein each of the word line drive circuits of the first plurality is connected to a respective odd numbered subword line of the memory cell array. A first plurality of subword line drive circuits drive the respective odd numbered subword lines responsive to odd numbered predecoding signals and the word line signal.

Abstract: A superior grade of flake mica product may be produced by applying shear forces to sedimentary mica to delaminate it into flakes. Shear forces are applied by rotating a plurality of arcuate blades within a confined cylindrical chamber containing the mica, such that the mica is forced between an outer portion of each blade and the chamber. Each one of the arcuate blades is curved to define an end portion that is spaced from, and substantially concentric with, a portion of the cylindrical chamber.

Abstract: Methods, systems and computer program products are provided which utilize luminance in the reduction in resolution of high-resolution values of the color components to provide reduced-resolution values of the color components. These methods, systems and computer program products preferably reduce the resolution of the high-resolution-value of the color components for a picture element to provide reduced-resolution values based upon the difference in luminance between the high-resolution values of the color components and the reduced-resolution values of the color components. Preferably, the difference between the luminance of the high-resolution values of the color components and the reduced-resolution values of the color components is minimized.

Abstract: A MOS capacitor has uniform C-V capacitance characteristics across an operating voltage range and has reduced susceptibility to insulator breakdown and includes a semiconductor substrate of first conductivity type, a region of insulating material on an upper surface of the substrate and a well region of second conductivity type extending adjacent the region of insulating material. The well region is spaced from the region of insulating material so that the substrate extends to the upper surface therebetween. A source region of second conductivity type is formed in the well region. An insulating layer is formed on the source region and extends over the region of insulating material. A first electrode is formed on the insulating layer and a second electrode is formed on the source region. The capacitor also includes a P-N junction established between the source region of second conductivity type and the region of insulating material beneath the insulating layer.

Abstract: A method has been developed for the injection of muscle tissue of an embryonic chicken in ovo. An apparatus for such injection in a plurality of eggs simultaneously has also been developed, where the apparatus is composed of a an engaging means for the eggs, an injection means to insert an elongate needle through the eggshell to a depth of about 7/8 inch to 1.5 inch into the shoulder or breast of the embryo, and a positioning means to position the needle about 1 to 5 degrees of offset of the long axis of the egg. The apparatus can delivery a variety of substances to the muscle tissue of the embryonic chicken in ovo.

Abstract: Methods of screening for the presence of specific Phytophthora species using oligonucleotide primers are discussed. Specific methods are presented to determine the presence of P. infestans in potato and tomato, and P. cactorum in tomato and other plant species.

Abstract: Recombinant pathogen-resistant plants comprise transformed plant cells, with the transformed plant cells containing a heterologous DNA construct comprising an expression cassette. The construct comprises a promoter, a structural gene positioned downstream from the promoter, and a termination sequence such as the nos terminator positioned downstream from the structural gene. The promoter is one which is activated by a plant pathogen which attacks the plant, such as the RB7 nematode-responsive element. The structural gene encodes a product such as Barnase which is toxic to the plant cells.

Abstract: Integrated circuit memory devices having direct read capability eliminate the use of page buffers to retain bit line data during reading operations. The page buffer is replaced by a plurality of PMOS pull-up transistors which are coupled through NMOS pass transistors to respective bit lines and also directly to inputs of a column selection circuit. A PMOS pull-up transistor and sense amplifier are also preferably provided at an output of the column selection circuit so that respective bit lines can be read one-at-a-time upon sequential application of a plurality of column address signals to the column selection circuit. The output of the sense amplifier is then provided to an output buffer which is typically electrically connected to an I/O pad.

Abstract: An ultrasonic transducer assembly is disclosed having both transmit and receive circuitry integral to the transducer assembly for generating and receiving ultrasonic pulses. The ultrasonic transducer array which is integral with the transducer assembly preferably includes multi-layer transducer elements as transmit elements of the array and may include single layer transducer elements as receive elements. Also disclosed is an ultrasonic scanner utilizing the transducer assembly with integral transmit and receive circuitry to reduce the amount and complexity of interconnections between the transducer assembly and a scanner rack.

Abstract: A shrink resistant resin composition which is curable at room temperature. The composition is (a) a curable unsaturated polyester resin, (b) an accelerator, (c) a low temperature free radical peroxide initiator, and (d) a low profile additive comprising polyolefin powder. The resin composition may be cured at room temperature to provide a molded article which exhibits improved shrink-resistance.

Abstract: Rapid curing of polymer layers on semiconductor substrates is facilitated using variable frequency microwave energy. A semiconductor substrate having a polymer layer thereon is placed in a microwave furnace cavity, and then swept with a range of microwave frequencies. The range of frequencies includes a central frequency selected to rapidly heat the polymer layer. The range of frequencies is selected to generate a plurality of modes within the cavity. The sweep rate is selected so as to avoid damage to the semiconductor substrate and/or any components thereon. The microwave power may be adjusted during frequency sweeping to control the temperature of the polymer layer and the semiconductor substrate. Effluent produced during the curing of the polymer layer may be removed from the furnace cavity.

Abstract: A photolithographic projection system for transferring a predetermined pattern from a photomask to a wafer includes a radiation source and a grating mask. The radiation source projects radiation along a path through the photomask toward the wafer. The grating mask is positioned along the radiation path and is separate from the photomask. In a method for transferring a predetermined pattern from a photomask to a wafer, radiation is projected along a path through a grating mask and a photomask toward the wafer, and the grating mask is separate from the photomask.

Abstract: A base station includes first and second antenna arrays for receiving first and second rotational polarizations, and a polarization diversity receiver connected to the first and second antenna arrays for processing respective first and second receive signals from a mobile station to generate an enhanced quality output receive signal based upon polarization diversity reception. Polarization isolation between the transmit and receive antenna elements may also provided by having a first plurality of transmit antenna elements for the second polarization mounted on a substrate carrying the first receive antenna elements. The second antenna array includes a second plurality of antenna elements of second polarization on a substrate carrying the second receive antenna elements.

Abstract: Methods of forming bipolar junction transistors include the steps of forming a first insulating layer on a face of a semiconductor substrate containing a collector region of first conductivity type therein and then forming an opening in the first insulating layer to expose the collector region at the face. An extrinsic base region contact layer of second conductivity type is then formed on the first insulating layer and in the opening and then an extrinsic base region of second conductivity type is formed in the collector region, at the opening in the first insulating layer. Next, a second insulating layer is formed on the extrinsic base region contact layer and first insulating layer, using the first insulating layer as a mask to prevent contact between the second insulating layer and the collector region at the face.

Abstract: A silicon carbide (SIC) metal-insulator semiconductor field effect transistor having a u-shaped gate trench and an n-type SiC drift layer is provided. A p-type region is formed in the SiC drift layer and extends below the bottom of the u-shaped gate trench to prevent field crowding at the corner of the gate trench. A unit cell of a metal-insulator semiconductor transistor is provided having a bulk single crystal SiC substrate of n-type conductivity SiC, a first epitaxial layer of n-type SiC and a second epitaxial layer of p-type SiC. First and second trenches extend downward through the second epitaxial layer and into the first epitaxial layer with a region of n-type SiC between the trenches. An insulator layer is formed in the first trench with the upper surface of the insulator on the bottom of the trench below the second epitaxial layer. A region of p-type SiC is formed in the first epitaxial layer below the second trench.