Abstract: Apparatus, methods and computer program products that support inter-PLMN coordination in registration and handover operations are provided. Hysteresis is introduced in registration of radioterminals in a hybrid terrestrial/satellite mobile communications environment. Inter-PLMN handover techniques are provided, including techniques for coordination of communication of timing information and traffic channel controls.

Abstract: A nonvolatile memory device includes a plurality of memory banks, each including a plurality of nonvolatile resistive memory cells (e.g. PRAM cells). The device also includes a write global bitline shared by the memory banks and a read global bitline shared by the memory banks. The device further includes a control circuit configured to write data to a selected nonvolatile memory cell in a first memory bank using the write global bitline while reading data from a selected nonvolatile memory cell in a second memory bank using the read global bitline such that a discharge time period of the write global bitline is longer than a quenching time period of a write current which flows through the nonvolatile memory cell of the first memory bank.

Abstract: A method for a cellular network (100) comprising cells (110) of a first kind controlled by corresponding base stations (111), and cells (120-122) of a second kind controlled by corresponding base stations (125-127). The second kind of cells are smaller than the first kind of cells (110). The network (100) comprises functions (140) for control of the base stations, and functions (150) for handing over the control of user terminals (123, 112) between base stations. The method is used when a call in a cell of the second kind (120-122) is handed over to a base station of the first kind. The method lets said control function (140) of the base station of the cell of the second kind send identifying information to the control function (140) of the base station (111) of the first kind, such that if the call is to be handed back to the original base station (125-127), the original base station can be found by the network.

Abstract: A micro-electromechanical resonator self-compensates for process-induced dimensional variations by using a resonator body having a plurality of perforations therein. These perforations may be spaced along a longitudinal axis of the resonator body, which extends orthogonal to a nodal line of the resonator body. These perforations, which may be square or similarly-shaped polygonal slots, may extend partially or entirely though the resonator body and may be defined by the same processes that are used to define the outer dimensions (e.g., length, width) of the resonator body.

Abstract: The described invention relates to compounds which modulate cell migration, and find use in, for example, wound healing, cancer progression and angiogenesis.

Abstract: The present invention provides methods and compositions for treating a disorder associated with a deficiency in a gene product of a CLN gene in a subject (e.g., neuronal ceroid lipofuscinosis (NCL)), comprising administering to the subject an effective amount of a sphingolipid (e.g., galactosylceramide, ceramide, lysophosphatidic acid, sulfatide and any combination thereof), thereby treating the disorder in the subject.

Abstract: A memory system having a plurality of memory devices and a memory controller. The memory devices are coupled to one another in a chain. The memory controller is coupled to the chain and configured to output a memory access command that is received by each of the memory devices in the chain and that selects a set of two or more of the memory devices to be accessed.

Abstract: Provided is a photomask used in fabrication of a semiconductor device. The photomask includes first and second regions to be transferred onto a semiconductor substrate having a step difference. The first and second regions have mask patterns. The mask patterns of the first region have a different shape from the mask patterns of the second region. The mask patterns of the second region have concave and convex portions disposed in opposite lateral portions thereof.

Abstract: A wireless relay node (100) comprises a receiving side (110) and a transmitting side (120) adapted for concurrent reception and transmission of an information stream, and at least one of the two sides has multiple antennas for multi-antenna operation. In the internal design, the wireless relay node is further configured (130) for cancelling signal feedback from a multi-antenna dependent feedback channel from the transmitting side to the receiving side based on an N×M dimensional filter matrix (135) dependent on the multi-antenna dependent feedback channel, where at least one of N and M is greater than 1. In this way, self-interference cancellation of a multi-antenna dependent feedback signal from the output to the input of the wireless relay node is effectively obtained.

Abstract: Provided is a semiconductor memory device. The semiconductor memory device includes: a voltage generator adjusting a DC voltage supplied into the semiconductor memory device according to a current temperature; and a control logic activating a temperature detection operation of the voltage generator and an adjustment operation of the DC voltage according to an operation mode, wherein the voltage generator adjusts the DC voltage according to offset information about the semiconductor memory device.

Abstract: A method of fabricating a vertical NAND semiconductor device can include changing a phase of a first preliminary semiconductor layer in an opening from solid to liquid to form a first single crystalline semiconductor layer in the opening and then forming a second preliminary semiconductor layer on the first single crystalline semiconductor layer. The phase of the second preliminary semiconductor layer is changed from solid to liquid to form a second single crystalline semiconductor layer that combines with the first single crystalline semiconductor layers to form a single crystalline semiconductor layer in the opening.

Abstract: Methods, data processing systems and computer program products for assessing and assigning privacy levels to data elements are provided. A method of assigning privacy levels to data elements (e.g., text files, web page files, image files, audio files, video files, and portions thereof) includes assigning a predetermined privacy level to a data element; storing the data element with the assigned privacy level; determining if the assigned privacy level for data element is proper; and assigning a different privacy level to the data element in response to determining that a currently assigned privacy level for the data element is not proper. A predetermined privacy level may be assigned to a data element under various conditions, such as when the data element arrives at a device, when the data element is created by a device, and/or when the data element is modified by a device.

Abstract: A filler cloth includes cellulosic fibers treated with a flame retardant chemistry such that the filler cloth has a char length of less than about nine inches when tested in accordance with NFPA 701, such that thermal shrinkage of the filler cloth at 400° F. is less than about 35% in any direction, and such that the filler cloth maintains flame and heat resistant integrity when impinged with a gas flame in accordance with testing protocols set forth in Technical Bulletin 603 of the State of California Department of Consumer Affairs. The filler cloth cellulosic fibers are treated with a flame retardant chemistry such that the filler cloth has a Frazier air permeability of less than about 400 cfm and a thermal resistance rating of at least about 3 when tested according to NFPA 2112.

Abstract: Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.

Abstract: Two satellite communications systems can use the same frequency or frequencies in geographically overlapping footprints, without creating undue interference in a given system that is caused by the same frequency signal(s) that is/are used by the other system. In particular, an aggregate Effective Isotropic Radiated Power (EIRP) of the radioterminals and/or ancillary terrestrial components of a second satellite communications system in the common footprint is sufficiently low, and/or the receive antenna gain of a first satellite communications system is sufficiently low compared to the receive antenna gain of the second satellite communications system, so as to increase an aggregate receiver noise that is seen by the first satellite system receivers by an amount that does not substantially change a Quality of Service (QoS) of the first satellite communications system.

Abstract: Provided is a non-volatile memory device including a bottom electrode disposed on a substrate and having a lower part and an upper part. A conductive spacer is disposed on a sidewall of the lower part of the bottom electrode. A nitride spacer is disposed on a top surface of the conductive spacer and a sidewall of the upper part of the bottom electrode. A resistance changeable element is disposed on the upper part of the bottom electrode and the nitride spacer. The upper part of the bottom electrode contains nitrogen (N).

Abstract: A switch circuit includes a first capacitor, a second capacitor, and a switch arrangement that is operable to connect the first capacitor and the second capacitor in series between a first node that supplies a first voltage level and a second node that supplies a second voltage level, or to disconnect the first capacitor and the second capacitor from the first node and the second node, respectively, and to cross-connect the first capacitor and the second capacitor in response to a first control signal.

Abstract: A processor for use in a satellite communications system includes a selector that is configured to select a subset of a plurality of spatially diverse satellite signals based upon a location of a radioterminal. The processor further includes a signal processor that is configured to detect a return-link transmission from the radioterminal responsive to the selected subset of the spatially diverse satellite signals. The respective spatially diverse satellite signals may include respective signals corresponding to respective antenna elements of a satellite. The selector and the signal processor may be ground based.

Abstract: The present invention provides compounds of Formula (I): along with compositions containing the same and methods of use thereof in treating oxidative stress.

Abstract: Provided are a semiconductor device and a method of fabricating the semiconductor device. The semiconductor device can include first transistors that include a first gate insulating layer having a first thickness and second transistors include a second gate insulating layer having a second thickness less than the first thickness. At least one of the transistors formed on the first or second gate insulating layers is directly over a dummy well.