Abstract: Process for preparing 1-octa-2,7-dienyl derivatives by reacting a 1,3-butadiene-containing hydrocarbon mixture, in particular a C4 fraction from a cracker, with nucleophiles, in which acetylenically unsaturated compounds are removed from the starting hydrocarbon mixture by selective hydrogenation and a telomerization is subsequently carried out.

Abstract: A method for detachable bonding that forms an amorphous silicon layer, or a silicon oxide layer with a high hydrogen content, on an element such as a carrier substrate. A second element, such as a substrate, is bonded to the amorphous silicon layer or silicon oxide layer, and the second element may then have a portion removed. A third element, such as a host or carrier substrate, is bonded to the second element or to the remaining portion of the second element to form a bonded structure. The bonded structure is then heated to cause the first element to detach from the bonded structure.

Abstract: To enable acquisition of image data in multiple tone levels in a short capturing time, a liquid crystal display device 1 includes a photodiode having sensitivity R, a capacitor having capacitance C and configured to store a charge in response to an electric signal converted by the photodiode in a state where an initial voltage V is applied thereto, a SRAM configured to retain binary data which indicate as to whether or not an amount of charge stored in the capacitor is equal to or above a threshold voltage Vth, an image capturing control unit 5 configured to generate pixel data in multiple tone levels based on the binary data outputted from the SRAM of a plurality of adjacent pixels. Here, at least any one value of R, V, C, and Vth in each of the pixels is set to a different value from relevant values of other adjacent pixels.

Abstract: A forging apparatus 1A includes a swaging apparatus 2 equipped with a fixing die 10, a guide 20 having an insertion passage 22 for inserting and holding a bar-shaped raw material 5 in a buckling preventing state, and a punch 30. The raw material 5 is fixed to the fixing die 10 with the one end portion of the raw material protruded. The one end portion of the raw material 5 is inserted into the insertion passage 22 of the guide 20. Thereafter, while pressing the raw material 5 with the punch 30 in the axial direction, in a state in which an entire peripheral surface of the exposed portion 8 of the raw material 5 exposed between the guide 20 and the fixing die 10 is not restrained, the guide 20 is moved in a direction opposite to the moving direction of the punch 30 so that a length of the exposed portion 8 of the raw material 5 becomes a budding limit length or less at a cross-sectional area of the exposed portion 8 of the raw material 5.

Abstract: There is provided a laser processing apparatus, a multilayer printed wiring board manufacturing apparatus, and a manufacturing method to form via holes of ultra-fine diameter. The laser beam from the CO2 laser oscillator (60) is converted to the shortened wavelength beam by a tellurium crystal (94) to control diffraction of the laser beam. Simultaneously, when the laser beam is condensed, a limit value of the condensation limit is reduced. Thereby, the spot diameter of laser beam is reduced and a hole for via hole is bored on the interlayer insulation resin on a substrate (10). Therefore, even when the laser beam output is raised to form a deeper hole, the hole diameter is not widened and thereby a hole for a small diameter via hole can be formed.

Abstract: An avalanche photodiode according to this invention include a light receiving region 101 surrounded by a ring-shaped trench 13, a first electrode 11 formed on the light receiving region 101, a second electrode 12 formed on the periphery of the ring-shaped trench 13 surrounding the light receiving region, a first semiconductor layer lying just under the first electrode 11, and a second semiconductor layer lying just under the second electrode 12. Conductivity types of the first semiconductor and the second semiconductor are identical.

Abstract: An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.

Abstract: A photocurable and thermosetting composition for an ink jet system comprises (A) a monomer having a (meth)acryloyl group and a thermosetting functional group in its molecule, (B) a photoreactive diluent having a weight-average molecular weight of not more than 700 other than the component (A) mentioned above, and (C) a photopolymerization initiator and has a viscosity of not more than 150 mPa·s at 25° C. A solder resist pattern is directly drawn on a printed circuit board by means of an ink jet printer using the above-mentioned composition, and the pattern is primarily cured by irradiation with an active energy ray and then further cured by heating.

Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate including first and second element-formation regions partitioned by an isolation trench, first and second lower gate insulating films formed on the first and second element-formation regions, first and second floating gates formed on the first and second lower gate insulating films, an isolation insulating film formed at least in the isolation trench and has a depression formed in an upper surface thereof, an upper gate insulating film formed on the first and second floating gates, and a control gate line including an opposed portion opposed to the first and second floating gates, with the upper gate insulating film being interposed, and a portion located inside the depression, the first floating gate including a side surface opposed to the second floating gate and entirely aligns with a side surface included in the first element-formation region and defined by the isolation trench.

Abstract: A process for producing a film forming composition, the process including hydrolyzing and condensing: (A) at least one silane compound selected from a compound (A-1) shown by the following general formula (1), a compound (A-2) shown by the following general formula (2), and a compound (A-3) shown by the following general formula (3), RaSi(OR1)4-a??(1) Si(OR2)4??(2) R3b(R4O)3-bSi—(R7)d—Si(OR5)3-cR6c??(3); and (B) a cyclic silane compound shown by the following general formula (4):

Abstract: In an information recording processor, component bits of additional data to be recorded on an information recording medium are stored in specific user control data. Pointer information representing row and column numbers used as identification information of the user control data is set as the values of DC control bits in a user-control-data-pointer-information-set recording frame selected from recording data. In an information playback processor, from the DC control bits in the recording frame, the row and column numbers of the user control data are acquired. The user control data is acquired and the additional data is acquired.

Abstract: A mobile network that is a subnet that partially constitutes multiple IP networks includes a home agent server for managing identifiers of a plurality of mobile terminals each of which joins the mobile network, and a plurality of IP tunnel routers. When a mobile terminal moves from the subnet to another subnet that partially constitutes the multiple IP networks, the home agent server accepts destination information necessary for transmission of IP packets to the mobile terminal from the mobile terminal, and delivers IP tunnel setting information indicating the mobile terminal and the destination information to the plurality of IP tunnel routers. When then receiving an IP packet destined for the mobile terminal, each of the plurality of IP tunnel routers transfers the IP packet to the mobile terminal based on the IP tunnel setting information without making the IP packet go through the home agent server.

Abstract: An encoding method, decoding method and a communication method using single photons where information is directly encoded into each photon. In one embodiment at least two out of the three parameters of phases, polarization, and energy are used to encode information. In another embodiment, three or more non-orthogonal states with respect to each parameter are used. A further embodiment is also described which uses selective grouping of the results in order to more clearly detect the presence of an eavesdropper. Apparatus capable of performing the methods are also provided.

Abstract: The invention relates to an installation (1) for sterilising objects (2) by low-energy electron bombardment, including sterilisation means (18) capable of generating an electron beam along an axis (A) passing through a treatment chamber (16). According to the invention, the installation includes a mechanical module (12) designed so as to be capable of generating a relative rotation movement, between the object and the sterilisation means, about an axis (A?) chosen so that axis (A) of the electron beam generated by the sterilisation means continuously passes through the external surface of the object during the relative rotation movement about the axis (A?). In addition, it comprises mechanical module (22) enabling the object to be rotated about an axis (A?) oriented orthogonally with respect to axis (A?).

Abstract: A semiconductor memory device excellent in data holding characteristics even when a cell area is reduced is disclosed. According to one aspect of the present invention, a semiconductor memory device comprises a transistor including a source, a drain and a channel region disposed in a semiconductor substrate, and including a gate electrode disposed through a gate insulator on a surface of the semiconductor substrate of the channel region, a capacitor connected to the channel region, a first wiring line electrically connected to the gate electrode, and a second wiring line electrically connected to the drain.

Abstract: The present invention relates to a method for producing a modified propylene-based polymer containing modifying a propylene-based polymer by a radical initiator and an organic acid, a modified propylene-based polymer obtained by the method, and an adhesive composition containing the modified propylene-based polymer. The propylene-based polymer is a propylene homopolymer satisfying the conditions of (a) mmmm=20 to 60 mol %, (b) [rrrr/(1-mmmm)]?0.1, (c) rmrm>2.5 mol %, (d) mmxrr/(mr)2?2.0, and (e) the weight ratio (W25) of components eluted at 25° C. or lower in a temperature programmed chromatography is 20 to 100% by weight, or a propylene copolymer satisfying the condition of (h) the stereoregularity index (P) obtained by 13C-NMR measurement is 55 to 90 mol %. The modified propylene-based polymer of the invention can make a polyolefin, etc. more adhesive, stronger, or flexible, to be useful for a high-adhesive sealant or an polyolefin with increased compatibility to an inorganic filler, etc.

Abstract: In a process for the production of composite elements which have the following layer structure: (i) from 2 to 20 mm of metal, plastic or wood, (ii) from 10 to 300 mm of plastic and (iii) from 2 to 20 mm of metal, plastic or wood, the starting materials for the production of (ii) are introduced in the liquid state in at least two steps into the space between (i) and (iii), the space to be filled in the last filling process having a volume of from 0.1 to 1.5 m3 and the height of the space to be filled being less than 25 mm.

Abstract: An electrolyte for an electrolytic capacitor which is high in electrolytic conductivity, excellent in heat stability and high in withstand voltage. An electrolyte for an electrolytic capacitor comprising a tetrafluoroaluminate ion; and an electrolyte for an electrolytic capacitor containing a salt and a solvent, characterized in that electrolytic conductivity X (mS·cm?1) at 25° C. and withstand voltage Y (V) of a capacitor satisfy the relationships of formulae (I): Y??7.5X+150, and X?4, Y>0.

Abstract: A control apparatus for an electric motor, in which a current controller giving multiphase voltage commands to a drive circuit for an inverter includes a normal-mode current controller for use in a normal mode, an abnormal-mode current controller for use in an abnormal mode, and an abnormality decision device. In a case of an abnormality occurring to one phase of an electric motor or the inverter, the controller is altered, and the abnormal-mode multiphase voltage commands which are generated by the abnormal-mode current controller are set as the multiphase voltage commands for the inverter drive circuit.

Abstract: An image forming apparatus, method, and computer program product, in which image data stored in a file can be printed in two printing modes when a sample printing mode is selected. A first page printing mode is a mode in which only a first page of a selected file is printed. A designated page range printing mode is a mode in which a designated page range of the selected file is printed in order of pages. A mismatch between the number of pages of the selected file and a designated page range is judged. When the mismatch arises, a warning is displayed on a display device of the image forming apparatus to give the warning to an operator.