Abstract: The present invention provides a method for forming high quality silicon material, e.g., polysilicon. The method includes transferring a raw silicon material in a crucible having an interior region. The crucible is made of a quartz or other suitable material, which is capable of withstanding a temperature of at least 1400 Degrees Celsius. The method includes subjecting the raw silicon material in the crucible to thermal energy to cause the raw silicon material to be melted into a liquid state to form a melted material at a temperature of less than about 1400 Degrees Celsius. Preferably, the melted material has an exposed region bounded by the interior region of the crucible.

Abstract: A battery includes a first portion including a substrate having formed thereon a current collector and an anode electrode material. A second portion is formed on a substrate and includes a current collector and a cathode electrode material. The first portion is joined to the second portion and a separator is disposed between the first portion and the second portion as joined to separate the anode electrode material from the cathode electrode material. An electrolyte is placed in contact with the anode electrode material, the cathode electrode material and the separator.

Abstract: A solar cell device. The device has a first lead frame member including a first end and a second end and a second lead frame member coupled to the first lead frame member. In a specific embodiment, the second lead frame member includes a third end and a fourth end. The device also has a plurality of first bonding sites numbered from 1 through N between the first end and the second end of the first lead frame member, where N is an integer greater than 2. The device has a plurality of second bonding sites numbered from 1 through N between the third end and the fourth end, where N is an integer greater than 2. Depending upon the specific embodiment, the device has a plurality of photovoltaic regions numbered from 1 through N respectively bonded onto the plurality of first bonding sites numbered from 1 through N and second bonding sites numbered from 1 through N.

Abstract: System and method for processing videos and images to a determined quality level. According to an embodiment, the present invention provides a method for enhancing video. The method includes providing a first video element that is uncompressed. The method also includes determining motion information associated with the video element. The method further includes providing a second video element by removing at least a defect from the first video element. The second video element includes a color luminance and a luminance. In addition, the method includes de-interlacing the second video element using the motion information. Furthermore, the method includes scaling the second video element. Also, the method includes providing a third video element by enhancing the chrominance and enhancing the luminance of the second video element. The method additionally includes outputting the third video element.

Abstract: An analog video receiver implemented in an integrated circuit device. The analog video receiver includes an amplifier to amplify an analog video signal having a desired carrier frequency, and a mixing circuit to mix the amplified analog video signal with a complex sinusoid having a frequency substantially equal to the carrier frequency.

Abstract: A method and system for generating a spatial signature for a frame of a video object. The method includes obtaining a frame associated with a video object, and dividing the frame into a plurality of blocks. The plurality of blocks corresponds to a plurality of locations respectively, each of the plurality of blocks includes a plurality of pixels, and the plurality of pixels corresponds to a plurality of pixel values respectively. Additionally, the method includes determining a plurality of average pixel values for the plurality of blocks respectively. Each of the plurality of blocks corresponds to one of the plurality of average pixel values. Moreover, the method includes processing information associated with the plurality of average pixel values and determining a plurality of comparison values for the plurality of blocks respectively based on at least information associated with the plurality of average pixel values.

Abstract: A method of forming a memory device. The method provides a semiconductor substrate having a surface region. A first dielectric layer is formed overlying the surface region of the semiconductor substrate. A bottom wiring structure is formed overlying the first dielectric layer and a second dielectric material is formed overlying the top wiring structure. A bottom metal barrier material is formed to provide a metal-to-metal contact with the bottom wiring structure. The method forms a pillar structure by patterning and etching a material stack including the bottom metal barrier material, a contact material, a switching material, a conductive material, and a top barrier material. The pillar structure maintains a metal-to-metal contact with the bottom wiring structure regardless of the alignment of the pillar structure with the bottom wiring structure during etching. A top wiring structure is formed overlying the pillar structure at an angle to the bottom wiring structure.

Abstract: The present invention provides a method to design, manufacture and structure a multi-component energy device having a unified structure, wherein the individual components are chosen from the list consisting of electrochemical cells, photovoltaic cells, fuel-cells, capacitors, ultracapacitors, thermoelectric, piezoelectric, microelectromechanical turbines and energy scavengers. Said components are organized into a structure to achieve an energy density, power density, voltage range, current range and lifetime range that the single components could not achieve individually, i.e. to say the individual components complement each other. The individual components form a hybrid structure, wherein the elements are in electrical, chemical and thermal conduction with each other.

Abstract: A method of determining at least one material property of at least one component of an electrochemical system (fully or partially completed) using a process to reduce a difference of a performance characteristic between a numerical simulation result of a physical model and an empirical result. The method includes providing an electrochemical cell using a thin film process and performing a plurality of tests on the electrochemical cell to identify one or more target performance characteristics of the electrochemical cell. The method includes performing a surrogate based analysis process and determining a plurality of outputs of the surrogate based analysis function and determines a value of the unknown material property.

Abstract: A method of the present invention using a prediction process including a battery equivalent circuit model used to predict a voltage and a state of charge of a battery. The equivalent circuit battery model includes different equivalent circuit models consisting of at least an ideal DC power source, internal resistance, and an arbitrary number of representative parallel resistors and capacitors. These parameters are obtained a priori by fitting the equivalent circuit model to battery testing data. The present invention further uses a correction process includes determining a corrected predicted state of charge of the battery; and storing the corrected state of charge of the battery in a storage medium. In the present invention, an expectation of the predicted voltage of the battery and an expectation of the predicted state of charge of the battery are obtained by an unscented transform with sigma points selected by a Gaussian process optimization.

Abstract: A method for forming a semiconductor device including a resistive memory cell includes providing a substrate having an upper surface. A first conductive layer is formed over the upper surface of the substrate. An amorphous silicon layer is formed over the first conductive layer. A surface of the amorphous silicon layer is cleaned to remove native oxide formed on the surface of the amorphous silicon layer. A silver layer is deposited over the amorphous silicon layer after removing the native oxide by performing the cleaning step. The resistive memory cell includes the first conductive layer, the amorphous silicon layer, and the second conductive layer. The surface of the amorphous silicon layer is cleaned to prevent silver agglomeration on the native oxide.

Abstract: A solar cell concentrator structure includes a first concentrator element having a first aperture region and a first exit region including a first back surface region and a first corner region. The structure also includes a second concentrator element integrally formed with the first concentrator element. The second concentrator element includes a second aperture region and a second exit region-including a second back surface region and a second corner region. Additionally, the structure includes a first radius of curvature of 0.25 mm and less characterizing the first corner structure and the second corner structure, a first coupling region between the first exit region and a first surface region of a first photovoltaic device. The structure further includes a second radius of curvature of 0.15 mm and less characterizing a region between the first concentrator element and the second concentrator element.

Abstract: This application describes a method of forming a switching device. The method includes forming a first dielectric material overlying a surface region of a substrate. A bottom wiring material is formed overlying the first dielectric material and a switching material is deposited overlying the bottom wiring material. The bottom wiring material and the switching material is subjected to a first patterning and etching process to form a first structure having a top surface region and a side region. The first structure includes at least a bottom wiring structure and a switching element having a top surface region including an exposed region of the switching element. A second dielectric material is formed overlying at least the first structure including the exposed region of the switching element. The method forms a first opening region in a portion of the second dielectric layer to expose a portion of the top surface region of the switching element.

Abstract: A solar cell concentrator structure includes a first concentrator element having a first aperture region and a first exit region including a first back surface region and a first corner region. The structure also includes a second concentrator element integrally formed with the first concentrator element. The second concentrator element includes a second aperture region and a second exit region-including a second back surface region and a second corner region. Additionally, the structure includes a first radius of curvature of 0.25 mm and less characterizing the first corner structure and the second corner structure, a first coupling region between the first exit region and a first surface region of a first photovoltaic device. The structure further includes a second radius of curvature of 0.15 mm and less characterizing a region between the first concentrator element and the second concentrator element.

Abstract: A frog lure device imitating life-like swimming action. The device has a diving “collar” disposed around an upper region of the lure body which causes the lure body to dive. Concurrent with the diving action, the lure has a kicking action such when given a single pull followed by a rest, the frog lure responds by diving from a surface region of the water to a depth beneath the surface region, straightening its legs as it moves forward and as the lure comes to rest, the legs retract. The collar forms a trail of bubbles and a vortex behind it. The pair of legs has a suitable length to not become trapped in the vortex, such that the legs straighten out to cause a kicking action and also provide stability to the lure as it accelerates through the water. The frog lure device can also be crawled across surface vegetation.