Abstract: A thin film transistor and a method of fabricating the same include: a semiconductor layer having a grain boundary disposed in a crystal growth direction and having a variation in height of a top surface of 15 nm or less formed by a thin beam directional crystallization method. Also, an organic light emitting diode (OLED) display device comprising the thin film transistor is provided and has excellent characteristics fabricated by a simple process. Also, a flat panel display device and a method of fabricating the same are provided and include: a polycrystalline silicon layer in a pixel region; and a polycrystalline silicon layer in a peripheral region formed by the thin beam directional crystallization method. Also, a semiconductor device and a method of fabricating the same include: an intrinsic region of a semiconductor layer in the photodiode region formed by the thin beam directional crystallization method.

Abstract: An organic light emitting display device and a method of fabricating the same are provided. The organic light emitting display device includes a substrate, a first electrode formed on the substrate, an inorganic pixel defining layer formed on the first electrode and having an opening exposing at least a portion of the first electrode, an organic layer disposed on the first electrode and having at least an organic emission layer, and a second electrode formed on the organic layer.

Abstract: Disclosed is a liquid crystal driving device, which is without a gate PCB, having improved uniformity of screen, and a driving method thereof. The liquid crystal driving device comprises: a sequence recognition means for recognizing sequence of a pertinent gate driver IC by a pulse width of a vertical start signal inputted in synchronization with a vertical synchronous signal, and generating a Carry signal and location data of the pertinent gate driver IC; and gate-off voltage generation means for receiving a first gate-off voltage and the location data of the pertinent gate driver IC, and outputting a second gate-off voltage which is generated by subtracting a voltage attenuation quantity corresponding to the location data of the gate driver IC from the first gate-off voltage.

Abstract: In one embodiment, an external signal input circuit of a semiconductor memory may include: an input block configured to receive a plurality of external signals and to generate a plurality of internal signals; and a control block configured to output one or more internal signals of the plurality of internal signals that correspond to a rank configuration of the semiconductor memory and to block output of one or more internal signals of the plurality of internal signals that do not correspond to the rank configuration.

Abstract: The present invention relates to a pixel and a data driver, and a driving method thereof to measure degradation of an organic light emitting element and a threshold voltage and mobility of a driving transistor in an organic light emitting device, wherein the degradation of the organic light emitting element and the threshold voltage and the mobility of the driving transistor are measured in a turn-on interval or a frame interval of the display device to amend the data voltage applied to the pixel, and thereby images of improved and uniform quality may be displayed.

Abstract: A riveting apparatus includes a hot air pipe; a connection pipe coupled to the hot air pipe; a forming tool having a configuration in which peripheral and center portions project downward and portions existing therebetween are curved upward, defined with discharge holes which extend in axial and radial directions, and coupled to a lower end of the connection pipe so that hot air having passed through the connection pipe can be discharged through the discharge holes to heat an end of a rivet to thereby allow the forming tool to form the end of the rivet into the shape of a head; a moving unit coupled to the hot air pipe or the connection pipe to move the forming tool upward and downward; and a guide surrounding the forming tool so that hot air discharged through the discharge holes can be directed toward the end of the rivet.

Abstract: Various embodiments of a fuse circuit of a semiconductor apparatus are disclosed. In one exemplary embodiment, the fuse circuit may include a fuse whose electrical connection state can be changed by an electrical stress applied thereto and a plurality of self boosting units configured to perform self boosting operations under the control of a rupture enable signal. The self boosting units may also be configured to generate stress voltages and supply the generated stress voltages to the fuse. The fuse circuit may also include a precharge unit configured to supply a precharge voltage to the fuse in response to a precharge signal and a cross-coupled latching amplification unit configured to sense a change in a voltage level of the precharge voltage supplied to the fuse, with reference to a reference voltage, and output a fuse state signal.

Abstract: A memory apparatus includes a temperature detection block configured to detect temperature of an internal circuit and output a temperature detection signal, a current control block configured to receive the temperature detection signal and generate a pulse control signal, and a write driver configured to provide a program pulse having a compensated level and width to a memory cell in response to the pulse control signal.

Abstract: A transport layer control device includes a controller to establish or release a transmission control protocol (TCP) connection and to process retransmission of a lost packet using TCP, and a packet processor to number packets and to process transmission of the numbered packets using a user datagram protocol (UDP). A method for transmitting a packet includes establishing the TCP connection with a receiving device, numbering packets and transmitting the numbered packets to the receiving device using UDP, and retransmitting a lost packet to the receiving device using TCP in response to a retransmission request for the lost packet. A method for receiving a plurality of packets includes establishing the TCP connection, receiving numbered packets using UDP, requesting retransmission of a lost packet using TCP, and receiving the lost packet through TCP.

Abstract: In a thin film transistor, first and second thin film transistors are connected to an Nth gate line and an Mth data line, and first and second sub pixel electrodes are connected to the first and second thin film transistors, respectively. A third thin film transistor includes a gate electrode connected to an (N+1)th gate line, a semiconductor layer overlapping with the gate electrode, a source electrode connected to the second sub pixel electrode and partially overlapping with the gate electrode, and a drain electrode facing the source electrode. A first auxiliary electrode is connected to the drain electrode and arranged on the same layer as the first and second sub pixel electrodes. An opposite electrode is arranged on the same layer as the gate line and at least partially overlaps with the first auxiliary electrode with at least one insulating layer disposed therebetween.

Abstract: A semiconductor memory apparatus includes a first data input/output line configured to transmit data from a first memory bank; a second data input/output line configured to transmit the data from the first memory bank; a first data output section configured to align and output data transmitted through the first data input/output line based on an input/output mode; and a second data output section configured to align and output either data transmitted through the first input/output line or the second data input/output line based on the input/output mode and an address signal.

Abstract: An organic light emitting device according to an exemplary embodiment of the present invention includes a plurality of first, second, and third pixels for displaying different colors, wherein the plurality of first and second pixels are alternately arranged in a first column, the plurality of third pixels are continuously arranged in a second column, and an interval between the third pixels is larger than an interval between the first pixel and the second pixel.

Abstract: A system to provide a supplementary service control menu includes an information collection unit to collect state information associated with a supplementary service; a level determination unit to determine a level of the supplementary service using the state information; a menu building unit to generate an identifier (ID) of the supplementary service and to build the supplementary service control menu; and a menu display unit to display the built supplementary service control menu including the supplementary service having an effect associated with the level on a screen.

Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

Abstract: Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0?x<1, 0?y?1 and 0?x+y?1) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode.

Abstract: The present invention relates to an organic light emitting device including a substrate, an insulating layer disposed on the substrate, a first electrode disposed on the insulating layer, an organic light emitting member disposed on the first electrode, and a second electrode disposed on the organic light emitting member. The insulating layer includes a furrow corresponding to at least one edge of the first electrode, and at least a portion of the second electrode is disposed in the furrow.

Abstract: A method of controlling a search controller includes: monitoring a top level window which is activated on a top level among applications in execution; determining whether the monitored top level window corresponds to a File Open dialog box; attaching the search controller to the File Open dialog box, when the monitored top level window is determined as the File Open dialog box; retrieving a file corresponding to a query which is inputted from a user via the search controller, and outputting a file search result list via the search controller, the file search result list including the retrieved file; receiving a selection on a particular file, which is included in the file search result list, from the user; and transmitting path information associated with the particular file to the File Open dialog box.

Abstract: A clock generation circuit of a semiconductor apparatus includes a first phase detection block configured to compare initial phases of a reference clock signal and an output clock signal in response to an operation start signal, and output an initial phase difference detection signal corresponding to a comparison result; a second phase detection block configured to compare phases of the reference clock signal and the output clock signal, and output a phase detection signal corresponding to a comparison result; a variable unit delay block determined in a control range of the delay amount thereof in response to the initial phase difference detection signal, and configured to delay the reference clock signal by a delay amount corresponding to a voltage level of a control voltage and output the output clock signal; and a delay control block configured to generate the control voltage which has the voltage level corresponding to the phase detection signal.

Abstract: The present invention relates to a display device including a substrate, a display signal line disposed on the substrate, a contact assistant disposed on the pad region of the substrate as a draw-out terminal of the display signal line, a driver IC chip disposed on the substrate and connected to the display signal line through the contact assistant, and a testing thin film transistor disposed between the substrate and the driver IC chip. The testing thin film transistor and the display signal line are connected to each other.

Abstract: A light guide plate includes an incident surface receiving incident light from a light source, an exit section that outputs exit light having a light distribution different from a light distribution of the incident light and a reflective section opposite to the exit section. A plurality of first patterns are formed on the exit section while being arranged in a first direction of the exit section to distribute the exit light with maximum brightness in a direction perpendicular to the exit section. A plurality of second patterns are formed on the reflective section to scatter the incident light.