Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract: The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.

Abstract: Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.

Abstract: The present invention relates to a process for depositing films on a substrate by chemical vapour deposition (CVD) or physical vapour deposition (PVD), said process employing at least one boron compound. This process is particularly useful for fabricating photovoltaic solar cells. The invention also relates to the use of boron compounds for conferring optical and/or electrical properties on materials in a CVD or PVD deposition process. This process is also particularly useful for fabricating a photovoltaic solar cell.

Abstract: The present invention provides for an integrated valve regulator assembly that comprises an integral body having a base portion that includes an axis for mounting on and coaxially with the neck portion of a pressurized source vessel and an assembly outlet, a defined internal passage in the integral body that extends through and between the base portion of the integral body and the assembly outlet, a sub-atmospheric pressure regulator assembled within the integral body of the integrated valve regulator assembly, an isolation valve positioned within the defined internal passage of the integral body and located downstream from and in communication with the sub-atmospheric pressure regulator, and a filling port disposed between the axis for mounting on and coaxially with the neck portion of the pressurized source vessel and the sub-atmospheric pressure regulator.

Abstract: Methods and systems for chemical management. In one embodiment, a blender is coupled to a processing system and configured to supply an appropriate solution or solutions to the system. Solutions provided by the blender are then reclaimed from the system and subsequently reintroduced for reuse. The blender may be operated to control the concentrations of various constituents in the solution prior to the solution being reintroduced to the system for reuse. Some chemicals introduced to the system may be temperature controlled. A back end vacuum pump subsystem separates gases from liquids as part of a waste management system.

Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

Abstract: Methods and apparatus for cleaning undesired substances from a surface in a semiconductor processing chamber. An cleaning gas mixture is formed onsite and stored in a buffer tank for a time, prior to its introduction into a semiconductor processing chamber, to remove an undesired substance from a surface in the chamber. The undesired substance is removed without the generation of a plasma in the chamber, and at a temperature of less than 300° C.

Abstract: An apparatus and method for the treatment of gaseous effluents involving contact with a liquid may include a gas/liquid contact chamber which can receive a liquid in the lower part thereof and which is topped with a gas cover, wherein the chamber allows a gas to be treated. The chamber may also release residual gases following treatment involving contact with the liquid. The apparatus may also include a turbine that includes one or more stages which ensure improved contact between the gas and the liquid, the upper part of the turbine being equipped with an opening for drawing the gas situated in the gas cover above the liquid; and, preferably, a sensor for measuring the pH of the liquid.

Abstract: Disclosed herein are precursors and methods for their use in the manufacture of semiconductor, photovoltaic, TFT-LCD, or flat panel type devices.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract: A compressed air producing method, in which two or more adsorption columns, in all or part of which a zeolite-series adsorbent is charged, are switched over to purify feed air and the adsorbent charged in at least one adsorption column of said adsorption columns is regenerated in turn with regeneration gas, is characterized by comprising a step of performing, when an adsorption column (R) in a regeneration step transfers to a purification step, the purge of said adsorbent with purified air, and characterized in that the internal pressure of an adsorption column (R) in the purge step is controlled such that a differential pressure thereof from the internal pressure of an adsorption column (P) in the purification step falls within a specified value.

Abstract: In one embodiment, a method of controlling fluids in a semiconductor processing system includes mixing two or more chemical compounds in a blender to produce a solution and supplying the solution to a reclaim tank, where the solution is dispense to a process station. The solution can be monitored at a location between the tank and the process station to determine whether at least one of the chemical compounds is at a predetermined concentration. Upon determining that the at least one chemical compound in the solution is at the predetermined concentration the solution is flowed to the process station. The method further includes removing at least a portion of the solution from the process station and returning the removed portion of the solution to the reclaim tank. The removed portion of the solution is monitored at a location between the process station and the reclaim tank to determine whether at least one of the chemical compounds in the removed portion of the solution is at a predetermined concentration.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide metal thin film layer is deposited onto the substrate.

Abstract: Methods for forming heteroleptic amidinate or guanidinate cyclopentadienyl containing transition metal precursors through synthesis reactions.

Abstract: A method of forming a silicon oxide film, comprising the steps of: —providing a treatment substrate within a reaction chamber; —purging the gas within the reaction chamber by feeding an inert gas into the chamber under reduced pressure at a substrate temperature of 50 to 400 C, —adsorbing, at the same temperatures and under reduced pressure, a silicon compound on the treatment substrate by pulsewise introduction of a gaseous silicon compound into the reaction chamber, —purging, at the same temperatures and under reduced pressure, the unadsorbed silicon compound in the reaction chamber with an inert gas, —at the same temperatures and under reduced pressure, introducing a pulse of ozone-containing mixed gas into the reaction chamber and producing silicon oxide by an oxidation reaction with the silicon compound adsorbed on the treatment substrate; and—repeating steps 1) to 4) if necessary to obtain the desired thickness on the substrate.

Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazine group, wherein X1, X2, X3, and X4 may be the same or different from one another.

Abstract: The present invention provides methods for checking and calibrating one or more concentration sensors in an open or closed system. More specifically, in one embodiment of the present invention, the disclosed method allows for the checking and calibration of one or more concentration sensors in which removal of the liquid from the system is required. In two additional embodiments, the disclosed methods allow for the checking and calibration of one or more concentration sensors without having to remove the liquid from the closed system thereby minimizing contamination of the system while at the same time greatly reducing or eliminating contact of the user with the liquid.

Abstract: Disclosed herein are tellurium metal-organic precursors and methods for depositing tellurium-containing films on a substrate.