Abstract: Purified SiHCl3 and/or SiCl4 are used as a sweep gas across a permeate side of a gas separation membrane receiving effluent gas from a polysilicon reactor. The combined sweep gas and permeate is recycled to the reactor.

Abstract: Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

Abstract: To provide a simple highly-pure Xe retrieval method and device with high retrieval efficiency by functionally removing such elements as water, CO2 and FCs from waste gases from semiconductor production processes, such as the plasma etching, that contain low-concentration Xe. For samples containing xenon and fluorocarbon, this invention is characterized by having at least first adsorption means (A1) filled with synthetic zeolite with pore size of 4A or smaller and aluminum oxide, arranged serially, gas separation means (A2) composed of silicone or polyethylene hollow fiber gas separation membrane modules 4, second adsorption means (A3) filled with either activated carbon, synthetic zeolite with pore size of 5A or larger, molecular sieving carbon with pore size of 5A or larger, or a combination of these, and reaction means (A4) filled with calcium compounds as reactant.

Abstract: Pentakis(dimethylamino) disilane with general formula (1): Si2(NMe2)5Y, where Y is selected from the group comprising H, Cl or an amino group its preparation method and its use to manufacture gate dielectric films or etch-stop dielectric films of SiN or SiON.

Abstract: Disclosed are cleaning solvents and cleaning methods for metallic compounds deposited on the equipment that supplies organometallic compounds to the manufacturing tool in the photovoltaic industry or the semiconductor industry. The cleaning solvents and the cleaning methods disclosed not only selectively remove the metallic compound without corroding the equipment, but also improve the ordinary cleaning process. Moreover, the cleaning solvents and the cleaning methods disclosed improve maintenance costs for the supply system because the equipment may be cleaned without being detached from the supply system.

Abstract: Methods and apparatus for the storage of acetylene include providing an acetylene storage device which has an interior volume. A carbonaceous adsorbent is disposed in the interior volume of the storage device, and acetylene is introduced into the storage device to be reversibly adsorbed by the carbonaceous adsorbent. A pressure of less than 2 bar is maintained in the storage device.

Abstract: Novel silicon precursors for low temperature deposition of silicon films are described herein. The disclosed precursors possess low vaporization temperatures, preferably less than about 500° C. In addition, embodiments of the silicon precursors incorporate a —Si—Y—Si— bond, where Y may comprise an amino group, a substituted or unsubstituted hydrocarbyl group, or oxygen. In an embodiment a silicon precursor has the formula: where Y is a hydrocarbyl group, a substituted hydrocarbyl group, oxygen, or an amino group; R1, R2, R3, and R4 are each independently a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, a heterohydrocarbyl group, wherein R1, R2, R3, and R4 may be the same or different from one another; X1, X2, X3, and X4 are each independently, a hydrogen group, a hydrocarbyl group, a substituted hydrocarbyl group, or a hydrazino group, wherein X1, X2, X3, and X4 may be the same or different from one another.

Abstract: Methods and compositions for depositing a tellurium containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium containing precursor is provided and introduced into the reactor, which is maintained at a temperature of at least 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.

Abstract: Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal.

Abstract: Methods of storing a precursor which decreases the precursor decomposition rate. A vessel is provided, where the vessel has an outer surface made of a first material, and an inner surface made of a second material. The first and second materials are different. A tantalum containing precursor is placed inside the vessel, and the vessel is heated to a temperature between 60° C. and 150° C. At least part of the precursor is withdrawn from the vessel.

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract: Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes.

Abstract: The invention relates to an apparatus for the treatment of gaseous effluents, such as those originating from the production of semi-conductors involving contact with a liquid. The inventive apparatus consists of: a gas/liquid contact chamber which can receive a liquid in the lower part thereof and which is topped with a gas cover, said chamber comprising means for introducing a gas to be treated and means for releasing residual gases following treatment involving contact with the liquid; turbine-type gas/liquid contacting means comprising one or more stages which ensure improved contact between the gas and the liquid, the upper part of said means being equipped with an opening for drawing the gas situated in the gas cover above the liquid; and, preferably, means for measuring the pH of the liquid.

Abstract: Methods and systems for chemical management. In one embodiment, a blender is coupled to a processing system and configured to supply an appropriate solution or solutions to the system. Solutions provided by the blender are then reclaimed from the system and subsequently reintroduced for reuse. The blender may be operated to control the concentrations of various constituents in the solution prior to the solution being reintroduced to the system for reuse. Some chemicals introduced to the system may be temperature controlled. A back end vacuum pump subsystem separates gases from liquids as part of a waste management system.

Abstract: The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the dielectric layer comprises SiC and/or SiOC, and is obtained from at least one precursor comprising at least one —Si—C<SUB>n</SUB>—Si chain where n=1.

Abstract: Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a metal to increase thermal stability. Furthermore, methods of depositing copper, gold, or silver are disclosed in conjunction with use of other precursors to deposit metal films. The methods and compositions may be used in a variety of deposition processes.

Abstract: Methods for the production of trisilane from the pyrolysis of disilane in a single reactor.

Abstract: Methods for forming a film on a substrate in a semiconductor manufacturing process. A reaction chamber a substrate in the chamber are provided. A ruthenium based precursor, which includes ruthenium tetroxide dissolved in a mixture of at least two non-flammable fluorinated solvents, is provided and a ruthenium containing film is produced on the substrate.

Abstract: Methods and systems for chemical management. In one embodiment, a blender is coupled to a processing system and configured to supply an appropriate solution or solutions to the system. Solutions provided by the blender are then reclaimed from the system and subsequently reintroduced for reuse. The blender may be operated to control the concentrations of various constituents in the solution prior to the solution being reintroduced to the system for reuse. Some chemicals introduced to the system may be temperature controlled. A back end vacuum pump subsystem separates gases from liquids as part of a waste management system.

Abstract: An improved bulk fluid distribution for supplying process fluids to semiconductor process tools. The improved system having an alternating pressure vessel engine substantially eliminates pressure fluctuations in the bulk fluid supply line due to head losses from the changing weight of the fluid in the dispensing vessels. The system also enables flexible control of the flow conditions of the fluid in the fluid supply line.