Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

Abstract: A new apparatus for processing substrates is disclosed. A multi-level load lock chamber having four environmentally isolated chambers interfaces with a transfer chamber that has a robotic assembly. The robotic assembly has two arms that each can move horizontally as the robotic assembly rotates about its axis. The arms can reach into the isolated chambers of the load lock to receive substrates from the bottom isolated chambers, transport the substrates to process chambers, and then place the substrates in the upper chambers. The isolated chambers in the load lock chamber may have a pivotably attached lid that may be opened to access the inside of the isolated chambers.

Abstract: A method of repairing a damaged portion of a casing in a wellbore includes running a bottom hole assembly (BHA) into the wellbore on a conveyance and locating the BHA proximate the damaged portion. The method further includes engaging an inner wall of the casing with a friction member, rotating the conveyance thereby rotating a portion of the BHA, maintaining a portion of the BHA stationary with the friction member. The method further includes pulling the inner string, thereby engaging the inner wall of the casing with an anchor of the BHA and disconnecting a frangible connection with the anchor. An inner string is coupled to an expansion member and pulling the inner string and thereby the expansion member through an expandable tubular expands the expandable tubular into engagement with the inner wall of the casing thereby repairing the damaged portion.

Abstract: A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.

Abstract: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.

Abstract: The present invention generally comprises TFTs having semiconductor material comprising oxygen, nitrogen, and one or more element selected from the group consisting of zinc, tin, gallium, cadmium, and indium as the active channel. The semiconductor material may be used in bottom gate TFTs, top gate TFTs, and other types of TFTs. The TFTs may be patterned by etching to create both the channel and the metal electrodes. Then, the source-drain electrodes may be defined by dry etching using the semiconductor material as an etch stop layer. The active layer carrier concentration, mobility, and interface with other layers of the TFT can be tuned to predetermined values. The tuning may be accomplished by changing the nitrogen containing gas to oxygen containing gas flow ratio, annealing and/or plasma treating the deposited semiconductor film, or changing the concentration of aluminum doping.

Abstract: Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

Abstract: A two-axis automation system can be used to transfer and rotate wafers between horizontal and vertical orientations necessary for differing steps in a semiconductor fabrication process. The two rotational axes allow for the transfer and rotation to be done in a minimal space and with a minimum amount of swept volume. A transfer arm of the automation system can include a pair of load pads capable of loading and unloading a wafer processing chamber in a single sweep.

Abstract: Embodiments of the invention generally provide methods for depositing and compositions of tantalum carbide nitride materials. The methods include deposition processes that form predetermined compositions of the tantalum carbide nitride material by controlling the deposition temperature and the flow rate of a nitrogen-containing gas during a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating the substrate to a temperature within a process chamber, and exposing the substrate to a nitrogen-containing gas and a process gas containing a tantalum precursor gas while depositing a tantalum carbide nitride material on the substrate.

Abstract: Methods and apparatus enable filling a receptacle with solid particles introduced into the receptacle with a controlled flow rate and pattern of distribution of the particles. A pneumatic loader may dispense the particles into the receptacle with ability to adjust the flow rate and pattern of distribution of the particles. Further, a laser sensor may enable detecting a topographic level of the particles loaded by movement of the laser sensor around a point to make linear measurements across the reactor at multiple angularly offset orientations.

Abstract: The present invention generally relates to thin film transistors (TFTs) and methods of making TFTs. The active channel of the TFT may comprise one or more metals selected from the group consisting of zinc, gallium, tin, indium, and cadmium. The active channel may also comprise nitrogen and oxygen. To protect the active channel during source-drain electrode patterning, an etch stop layer may be deposited over the active layer. The etch stop layer prevents the active channel from being exposed to the plasma used to define the source and drain electrodes. The etch stop layer and the source and drain electrodes may be used as a mask when wet etching the active material layer that is used for the active channel.

Abstract: A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber.

Abstract: The present invention generally relates to a substrate transferring system. Particularly, the present invention relates to apparatus and method to effectively remove the chemical fume, vapor and other byproducts generated during a polishing process. One embodiment of the present invention provides an apparatus for polishing a substrate comprising a platen having a polishing surface configured to polish the substrate by contacting the substrate while moving relatively to the substrate, a polishing head configured to support the substrate and position the substrate to be in contact with the polishing surface during polishing, a solution nozzle configured to dispense a polishing solution on the polishing surface, and an exhaust assembly configured to remove fume, vapor and other byproducts generated during polishing.

Abstract: A method for depositing a low dielectric constant film on a substrate is provided. The low dielectric constant film is deposited by a process comprising reacting one or more organosilicon compounds and a porogen and then post-treating the film to create pores in the film. The one or more organosilicon compounds include compounds that have the general structure Si—CX—Si or —Si—O—(CH2)n—O—Si—. Low dielectric constant films provided herein include films that include Si—CX—Si bonds both before and after the post-treatment of the films. The low dielectric constant films have good mechanical and adhesion properties, and a desirable dielectric constant.

Abstract: A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.

Abstract: A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed.

Abstract: The present invention generally comprises a floating slit valve for interfacing with a chamber. A floating slit valve moves or “floats” relative to another object such as a chamber. The slit valve may be coupled between two chambers. When a chamber coupled with the slit valve is heated, the slit valve may also be heated by conduction. As the slit valve is heated, it may thermally expand. When a vacuum is drawn in a chamber, the slit valve may deform due to vacuum deflection. By disposing a low friction material spacer between the chamber and the slit valve, the slit valve may not rub against the chamber during thermal expansion/contraction and/or vacuum deflection and thus, may not generate undesirable particle contaminants. Additionally, slots drilled through the chamber for coupling the slit valve to the chamber may be sized to accommodate thermal expansion/contraction and vacuum deflection of the slit valve.

Abstract: A method for the directional control of a rock-drilling ma-chine, the drilling unit (1) of the rock-drilling machine, which is located in a borehole (2), comprising at least a pi-lot drill bit (6) or an underreamer drill bit (8), the drill bit(s) (6, 8) being driven by an electric motor (10) via a gearbox (12), and the drill bit(s) (6, 8) being moved into the rock (3) by means of a feeding rod (4) extending from a feeding machine at the outside the borehole (2), and the drill bit(s) (6, 8), gearbox (12) and motor (10) being pivoted in a controlled manner about a steering axis (18) which is approximately perpendicular to the center axis (26) of the feeding rod (4).