Abstract: An apparatus for supporting a substrate and a method for positioning a substrate include a substrate support, a stator circumscribing the substrate support, and an actuator. The actuator is coupled to the stator and adapted to change the elevation of the stator and/or adjust an angular orientation of the stator relative to its central axis. As the substrate support is magnetically coupled to the stator, a position, i.e., elevation and angular orientation, of the substrate support may be controlled.

Abstract: A method and apparatus for preventing leakage from a fitting coupling a first and second fluid supply line to an environment surrounding the fitting is generally provided. In one embodiment, a containment apparatus includes a body having a first, second and third aperture formed therethrough. The body defines interior volume that is adapted to substantially enclose the fitting. The interior volume is adapted to be maintained at a pressure less than the surrounding environment to prevent fluid that may leak from the fitting from being released into the surrounding environment. In another aspect of the invention, a method for preventing fluid leakage from a fitting coupling a first and second conduit from entering an environment surrounding the fitting includes enclosing the fitting in a volume defined between a first shell and a second shell, evacuating the volume, and drawing air into the volume from between the shells.

Abstract: A near substrate reactant homogenization apparatus reduces the excess reactive species in a region at or near the edge of a substrate surface to provide a uniform reactant concentration over the substrate, thereby improving etch rate uniformity over the substrate. The near substrate reactant homogenization apparatus has a substantially planar surface that is parallel to said substrate surface and that extends beyond the substrate edge, at or below the substrate surface. In a first preferred embodiment of the invention, the temperature of the gas absorber area is changed to promote recombination or condensation of excess reactive species at the substrate edge, where the excess species are removed. In another, equally preferred embodiment of the invention, the gas absorber area is formed of a porous material having a large surface area. Excess reactive species enter the porous structure and are subsequently recombined.

Abstract: An RIE method and apparatus provides uniform and selective etching through silicon nitride material of a supplied workpiece such as a silicon wafer having silicon oxide adjacent to the SiN. A plasma-maintaining gas that includes N.sub.2 having an inflow rate of at least 10 sccm is used to provide etch-depth uniformity across the workpiece. The plasma-maintaining gas further includes HBr and one or both of NF.sub.3 and SF.sub.6.

Abstract: A sealing structure 20 for forming a seal around a chuck 30 used to hold a substrate 45 having a peripheral edge 50. An actuated, position-adjustable, sealing diaphragm 165 is disposed along the peripheral edge of the substrate. The diaphragm has a conformal sealing surface 170 capable of forming a seal when pressed against the peripheral edge of the substrate 45. A diaphragm actuator 175 actuates the sealing diaphragm from (i) a first non-sealing position 180 in which the conformal sealing surface of the diaphragm is spaced apart from the substrate held on the chuck to form a gap 190 therebetween, to (ii) a second sealing position 185 in which the conformal sealing surface of the diaphragm presses against, and forms a seal with, the peripheral edge of the substrate.

Abstract: A method of etching a dielectric layer on a substrate with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, the substrate is placed in a process zone, and a plasma is formed from process gas introduced into the process zone. The process gas comprises (i) fluorocarbon gas for etching the dielectric layer and for forming passivating deposits on the substrate, (ii) carbon-oxygen gas for enhancing formation of the passivating deposits, and (iii) nitrogen-containing gas for etching the passivating deposits on the substrate. The volumetric flow ratio of fluorocarbon:carbon-oxygen:nitrogen-containing gas is selected to provide a dielectric to resist etching selectivity ratio of at least about 10:1, an etch rate microloading of <10%, and a dielectric etch rate of at least about 100 nm/min.

Abstract: An electrostatic chuck (20) for holding a substrate (45) is described. One version of the chuck (20) suitable for mounting on a base (25), comprises (i) an electrostatic member (33) having an electrode (50) therein, and (ii) an electrical lead (60) extending through the base (25) to electrically engage the electrode (50) of the electrostatic member (33). When the chuck (20) is used to hold a substrate (45) in a process chamber (80) containing erosive process gas, the substrate (45) covers and substantially protects the electrical lead (60) from erosion by the erosive process gas. In a preferred version of the chuck (20), an electrical connector (55) forming an integral extension of the electrode (50), electrically connects the electrode (50) to a voltage supply terminal (70) used to operate the chuck (20).

Abstract: A method of etching a dielectric layer (20) on a substrate (25) with high etching selectivity, low etch rate microloading, and high etch rates is described. In the method, a substrate (25) having a dielectric layer (20) with resist material thereon, is placed in a process zone (55), and a process gas is introduced into the process zone (55). The process gas comprises (i) fluorohydrocarbon gas for forming fluorine-containing etchant species capable of etching the dielectric layer (20), (ii) NH.sub.3 -generating gas having a liquefaction temperature L.sub.T in a range of temperatures .DELTA.T of from about -60.degree. C. to about 20.degree. C., and (iii) carbon-oxygen gas. The temperature of substrate (25) is maintained within about .+-.50.degree. C. of the liquefaction temperature L.sub.T of the NH.sub.3 -generating gas. A plasma is formed from the process gas to etch the dielectric layer (20) on the substrate (25). Preferably, the volumetric flow ratio of fluorohydrocarbon:NH.sub.

Abstract: An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

Abstract: An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

Abstract: A process for producing a strip removes photoresist and extraneous deposits of polymer residue on the top surface and sidewalls of a post-metal etch wafer. The photoresist and residue are processed simultaneously by a chemical mechanism comprising reactive species derived from a microwave-excited fluorine-containing downstream gas, and a physical mechanism comprising ion bombardment that results from a radio frequency excited plasma and accompanying wafer self bias. A vacuum pump draws stripped photoresist and residues from the surface of the wafer and exhausts them from the chamber.

Abstract: A method of etching a multicomponent alloy on a substrate, without forming etchant residue on the substrate, is described. In the method, the substrate is placed in a process chamber comprising a plasma generator and plasma electrodes. A process gas comprising a volumetric flow ratio V.sub.r of (i) a chlorine-containing gas capable of ionizing to form dissociated Cl.sup.+ plasma ions and non-dissociated Cl.sub.2.sup.+ plasma ions, and (ii) an inert gas capable of enhancing dissociation of the chlorine-containing gas, in introduced into the process chamber. The process gas is ionized to form plasma ions that energetically impinge on the substrate by (i) applying RF current at a first power level to the plasma generator, and (ii) applying RF current at a second power level to the plasma electrodes. The combination of (i) the volumetric flow ratio V.sub.r of the process gas and (ii) the power ratio P.sub.

Abstract: A removable insulation jacket for a fluid carrying conduit includes an inner backing layer preformed to securely fit around the conduit. Insulation material is affixed to the inner backing layer and joined to an outer shell. The insulation jacket is placed around the conduit by engaging the insulation jacket with the conduit along an axial opening formed along the length of the insulation jacket, and the opening is then sealed at the outer shell to secure the insulation material about the conduit. The insulation jacket is pleated to conform to bends and curves that may occur along the length of the conduit.

Abstract: In an apparatus for producing an electromagnetically coupled planar plasma comprising a chamber having a dielectric shield in a wall thereof and a planar coil outside of said chamber and adjacent to said window coupled to a radio frequency source, the improvement whereby a scavenger for fluorine is mounted in or added to said chamber. When a silicon oxide is etched with a plasma of a fluorohydrocarbon gas, the fluorine scavenger reduces the free fluorine radicals, thereby improving the selectivity and anisotropy of etching and improving the etch rate while reducing particle formation.

Abstract: A process for fabricating an electrostatic chuck (20) comprising the steps of (c) forming a base (80) having an upper surface with cooling grooves (85) therein, the grooves sized and distributed for holding a coolant therein for cooling the base; and (d) pressure conforming an electrical insulator layer (45) to the grooves on the base by the steps of (i) placing the base into a pressure forming apparatus (25) and applying an electrical insulator layer over the grooves in the base; and (ii) applying a sufficiently high pressure onto the insulator layer to pressure conform the insulator layer to the grooves to form a substantially continuous layer of electrical insulator conformal to the grooves on the base.

Abstract: An improved plasma applicator uses a double-walled sapphire sleeve assembly to provide a high efficiency cooling mechanism that is adapted for use with high power applications and aggressive plasma chemistries in the generation of a plasma. Plasma contained within a highly thermally emissive first sapphire member heats the member, causing it to radiate thermal energy. The radiated thermal energy crosses a narrow gap and passes through an infrared-transparent second sapphire member. An infrared-absorbing coolant fluid that exhibits negligible microwave absorption is flowed in a second gap between the second sapphire member and a third member and absorbs most of the infrared radiation over the fluid's bulk. The use of a bulk fluid optimizes the cooling of the plasma to reduce ion and electron density and maximize reactive species output from the applicator to a vacuum process chamber.

Abstract: An electrostatic chuck (20) for holding a substrate (75) comprises (i) a base (80) having an upper surface (95) with grooves (85) therein, the grooves (85) sized and distributed for holding coolant for cooling a substrate (75), and (ii) a substantially continuous insulator film (45) conformal to the grooves (85) on upper surface (95) of the base (80). The base (80) can be electrically conductive and capable of serving as the electrode (50) of the chuck (20), or the electrode (50) can be embedded in the insulator film (45). The insulator film (45) has a dielectric breakdown strength sufficiently high that when a substrate (75) placed on the chuck (20) and electrically biased with respect to the electrode (50), electrostatic charge accumulates in the substrate (75) and in the electrode (50) forming an electrostatic force that attracts and holds the substrate (75) to the chuck (20).

Abstract: A substrate support member includes a pedestal and conductive member. The conductive member is cooled by the passage of a coolant therethrough, and a heat transfer enhancing fluid is flowed into the interface between the pedestal and the conductive member to increase the heat transfer from the pedestal to the conductive member.

Abstract: An electrostatic chuck (20) comprises at least one mesh electrode (30) on an underlying dielectric layer (25), the mesh electrode having apertures therethrough. A monocrystalline ceramic (28) covers the mesh electrode (30). The monocrystalline ceramic (28) comprises a layer of large crystals substantially oriented to one another, the layer of crystals having a resistivity sufficiently high to electrically insulate the mesh electrode (30). The monocrystalline ceramic (28) further comprises integral bonding interconnects (40) that form a unitary structure with the layer of large crystals, the bonding interconnects extending through the apertures in the mesh electrode (30) to bond directly to the underlying dielectric layer (25), substantially without adhesive.

Abstract: A puncture resistant electrostatic chuck (20) is described. The chuck (20) comprises at least one electrode (25); and a composite insulator (30) covering the electrode. The composite insulator comprises a matrix material having a conformal holding surface (50) capable of conforming to the substrate (35) under application of an electrostatic force generated by the electrode to reduce leakage of heat transfer fluid held between the substrate and the holding surface. A hard puncture resistant layer, such a layer of fibers or an aromatic polyamide layer, is positioned below the holding surface (50) and is sufficiently hard to increase the puncture resistance of the composite insulator.