Abstract: A multi-cell monoblock battery in which a plurality of electrochemical cells are disposed in a battery case. The battery case includes one or more cell partitions which divide the interior of the case into a plurality of cell compartments that house the electrochemical cells. Preferably, one or more coolant channels are integrally formed with at least one of the cell partitions. The coolant channels may have inlets and outlets disposed in the walls of the battery case so as to provide a cross-flow cooling design.

Abstract: A phase-change memory element including a phase-change material. The phase-change memory element has a plurality of memory state wherein each of the memory states has a corresponding threshold voltage. The threshold voltages may be used to determine the current memory state of the memory element. The phase-change material may include a chalcogen element.

Abstract: An inexpensive, highly catalytic material preferably formed by a leaching process. The catalyst comprises a finely divided metal particulate and a support. The active material may be a nickel and/or nickel nickel alloy particulate having a particle size less than about 100 Angstroms. The support may be one or more metal oxides.

Abstract: A hybrid electric vehicle drive system comprising a combustion engine, an electric motor and at least one nickel metal hydride battery module forming a power source for providing electric power to the electric motor, the at least one nickel metal battery module having a peak power density in relation to energy density as defined by: P>1,375?15E where P is the peak power density as measured in Watts/kilogram and E is the energy density as measured in Watt-hours/kilogram.

Abstract: The present invention is a method of data storage using a phase-change memory clement operating within its amorphous phase. The element stores at least one bit of data upon the application of a pulse that resets the element to one of at least a first resistance state and a second resistance state. Since the threshold voltage of a memory element varies linearly with its programmed resistance, the stored data can be read by the application of one or more discriminating voltages to the element. The current flowing through the element is limited to prevent a phase change when an applied discriminating voltage is greater than the threshold voltage. When the applied discriminating voltage is less than the threshold voltage, current flowing through the memory element is not limited. Based upon these current outputs, the resistance state of the element is determined.

Abstract: An active electrode composition comprising an active electrode material and a binder where the binder comprises a monosaccharide, a disaccharide, a pectin or a molasses. Preferably, the active electrode material is nickel hydroxide.

Abstract: A programmable resistance memory element including a pore of memory material which is raised above a semiconductor substrate by a dielectric layer. The pore may be formed with the use of sidewall spacers.

Abstract: A driver circuit having one or more MOS transistors. The driver circuit is capable of providing an output voltage greater than the power supply voltage; however, the magnitude of the voltages appearing across the terminals of the MOS transistors are preferably less than or equal to the magnitude of the power supply voltage. The driver circuit may comprise a plurality of serially coupled PMOS transistors and a plurality of serially coupled NMOS transistors wherein the plurality of PMOS transistors and plurality of NMOS transistors are coupled at the output node of the driver.

Abstract: A method of programming a programmable resistance element. The programmable resistance element may be programmed to a BLOWN state. After being programmed to the BLOWN state, the element can no longer be programmed to its low resistance state. The method of programming allows the programmable resistance element to be used as a fuse.

Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode, in a slot-like opening of a dielectric material. A method of making the opening.

Abstract: A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.

Abstract: An electrochemical cell having electrodes that are arranged in a zigzag configuration with folds and creases. Additional electrodes may be inserted within the folds of the zigzag configuration. Preferably, the electrochemical cell is a prismatic cell.

Abstract: A programmable resistance memory element using a conductive sidewall layer as the bottom electrode. The programmable resistance memory material deposited over the top edge of the bottom electrode in a slot-like opening formed in a dielectric material. A method of making the opening using a silylated photoresist.

Abstract: A multi-cell monoblock battery in which a plurality of electrochemical cells are disposed in a battery case. The battery case includes one or more cell partitions which divide the interior of the case into a plurality of cell compartments that house the electrochemical cells. Preferably, one or more coolant channels are integrally formed with at least one of the cell partitions. The coolant channels may have inlets and outlets disposed in the walls of the battery case so as to provide a cross-flow cooling design.

Abstract: A slurry loading apparatus for automatically loading a slurry into a substrate. The apparatus includes a pasting head. The pasting head includes a cavity that fills with slurry creating a pressure that forces the slurry onto the surface of the substrate and into the voids of the substrate. The slurry loading apparatus may include a feedback control loop that controls the rate in which slurry is delivered to the pasting head.

Abstract: An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

Abstract: An active composition for an electrode of an electrochemical device. The active composition comprises an active electrode material, a carbon material, and a binder where the binder comprises an elastomeric polymer. Preferably, the active electrode material is nickel hydroxide, the carbon material is graphite and the elastomeric polymer is styrene-butadiene.

Abstract: A method for making a small pore. The defined pore is useful for the fabrication of programmable resistance memory elements. The programmable resistance memory material may be a chalcogenide.

Abstract: A memory system, comprising: a memory cell comprising a programmable resistance element programmable to at least a first resistance state and a second resistance state. The memory cell interconnecting a row line and a column line. A power line, distinct from the row line and the column line, coupling said memory cell to a power source.