Abstract: A novel method for controlled release of compounds having antimicrobial activity and a novel coating composition capable of controlled release of compounds having antimicrobial activity is provided.This invention relates to a method for releasing a compound having antimicrobial activity from a matrix at a controlled rate, which comprises incorporating an enzyme and a substrate in said matrix beforehand to allow said enzyme and said substrate to react with each other in said matrix to thereby produce said compound having antimicrobial activity; and further relates to a coating composition comprising a film-forming resin, an enzyme, and a substrate, said enzyme being capable of reacting with said substrate to produce a compound having antimicrobial activity.

Abstract: An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.

Abstract: A track cleaning system mounted on a railcar and comprising track rail cleaning nozzles, leaf removal nozzles and third rail cleaning nozzles. Each of the nozzles may provide a fan-shaped spray pattern diverging to either side of a central axis and having a major axis. For each track rail nozzle, the central axis may be perpendicular to a horizontal top rail surface and the major axis may be perpendicular to the rail surface centerline. For each leaf nozzle, the central axis may be directly downwardly from the horizontal and the major axis may be parallel to an elongated spray bar on which one or more leaf nozzles are mounted. For each third rail nozzle, the central axis may be directed downwardly from the horizontal and the major axis may be positioned vertically. The third rail nozzles may be mounted to the rear of the leaf nozzles to aid in leaf removal. Main water valves are remotely actuated by air to release high pressure water to corresponding sets of nozzles.

Abstract: Etching residue is selectively removed employing a substantially non-aqueous composition containing a fluoride containing compound and certain organic solvents. Preferred compositions also include an anhydride.

Abstract: Motor vehicle door lock having a means of locking/unlocking the lock from the outside and an electric actuator (50) for controlling the means of locking/unlocking from the outside. In particular, the means of locking/unlocking from the outside is a central locking/unlocking wheel (20) with which all the means (22, 38, 40) of controlling the locking/unlocking of the lock from the outside cooperate. Also, the wheel can be rotated by the electric actuator (50).

Abstract: An input signal is quantized into a quantization-resultant signal. The quantization-resultant signal is compressed into a compression-resultant signal. The compression-resultant signal is formatted into a formatting-resultant signal corresponding to a predetermined format for a digital recording disc. The formatting-resultant signal includes segments corresponding to user data areas prescribed in the predetermined format. The compression-resultant signal is placed in the segments of the formatting-resultant signal. The formatting-resultant signal is encoded into an encoding-resultant signal of a CD format. The encoding-resultant signal is recorded on a recording medium.

Abstract: A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

Abstract: In a process for the production of molded parts that have a lamination of decorative material, as well as a foam layer between the decorative material and the molded part, the decorative material is first provided with an unfoamed backside layer. The backside layer is then connected to the molded part and expanded, while connected to the molded part, under the effect of heat.

Abstract: A device for transferring electric signals comprises a first unit having a bus and electrical and mechanical interconnections of this bus and a bus of another device at at least one side of the unit. A second unit has terminals electrically connected to the bus for external connection of the device to, and signal exchange with, electrical arrangements. The device further comprises two different carriers on which the bus unit and the terminal unit, respectively, are arranged, and members for releasable mechanical connection of the two carriers to each other, and adapted to allow separation of the terminal unit from the bus unit with maintained connection thereof to the bus unit of an adjacent device.

Abstract: Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing aqueous composition comprising a fluoride containing compound; a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof.

Abstract: Watertight and thermally insulating tank built into the bearing structure of a ship, the said tank comprising two successive watertightness barriers, the said bearing structure comprising walls (1) which form the internal sides of its double hull and two transverse bulkheads (2), these two watertightness barriers alternating with two thermally insulating barriers, the corner connection of the elements of the primary and secondary barriers, in the zones where the transverse bulkheads meet the internal sides, being achieved in the form of a connecting ring, the structure of which remains substantially constant right along the solid angle (3) of intersection between a transverse bulkhead and the internal sides, each connecting ring comprising a prefabricated composite girder (20) consisting of a rigid metal formwork (21) incorporated in a thermally insulating material (22), the said rigid formwork defining a central fixed anchorage zone (29) substantially at the intersection between the plane that bisects the co

Abstract: A photocathode device for use in an image intensifier, fabricated with a photoemissive semiconductor wafer having an active cathode layer which includes a central region of a first predetermined height surrounded by a peripheral region of a second predetermined height. The first predetermined height of the central region is configured to be greater than the second predetermined height of the peripheral region in order to create a recessed contact structure which is less likely to have unwanted emission points. A layer of conductive material covers the peripheral region to provide an electrical contact to the photocathode device. A layer of insulating material covers the layer of conductive material in order to protect the contact layer from being damage during handling operations.

Abstract: The present invention provides an antenna system, which is used for a mobile wireless device and can be accommodated in or withdrawn from a telephone set main unit, whereby element length is shortened and strength is increased while avoiding deterioration of characteristics when the antenna is accommodated in the telephone set main unit. The antenna (40) comprises a helical antenna (41) having a feeding unit (42) and a whip antenna (43) having a feeding unit (44). The whip antenna (43) passes through the helical antenna (41), and the helical antenna (41) and the whip antenna (43) are electrically insulated from each other. Because the whip antenna (43) is designed to pass through the helical antenna (41), an antenna system for mobile wireless communication can be provided, in which element length is shortened and strength is increased.

Abstract: A plant for transmitting electric power comprises at least one VSC-converter (1). It comprises also at least one DC/DC-converter (33, 34) having two current valves connected in series and an inductance connected to a midpoint therebetween. The DC/DC-converter is through said inductance connected to a first of the poles of the direct voltage side of the converter and through a first output terminal connected to one of the current valves to the second of the poles so as to obtain an unbalanced step-up-transformation of the direct voltage between the two poles while obtaining a potential having a higher value on the second output terminal (27) of the DC/DC-converter connected to the second current valve than on said first output terminal (28).

Abstract: A semiconductor device includes a semiconductor substrate in which a trench for element isolation is formed, and an element isolation oxide film buried into the trench in such a manner that the element isolation oxide film is projected from the surface of the semiconductor substrate. The element isolation oxide film which is an element isolation insulating film for defining an element forming region on the semiconductor substrate has a projection portion above the surface of the semiconductor substrate. The projection portion has the width wider than that of the trench. The projection portion and a contact portion made in contact with the semiconductor substrate within the trench are made of thermal oxide films, and a portion other than the projection portion and the contact portion is made of a CVD dioxide film.

Abstract: A motor vehicle door lock is provided. An inside connecting device is connected at one end to an inside door opening element and at another end to an inside opening lever. The inside opening lever pivots about a first pin via the inside connecting device and the inside door opening element, whereby the inside opening lever engages a pawl which in turn engages a striker. An inside pivoting arm cooperates with the inside opening lever. The inside pivoting arm pivots about pin whereby it moves the inside opening lever between a locked and an unlocked position. In the locked position, the inside opening lever is not affected by the inside connecting device and in the unlocked position, the inside connecting device may act on the inside opening lever. Corresponding parts are also provided for an outside door opening element. The latch, pawl, levers and pivoting arms are all arranged parallel to the same face of a housing whereby their pins are perpendicular to the same face.

Abstract: A multiple force tool for applying pressure to circuit components during a manufacturing operation. A plurality of compressed air pressure cylinders are supported on a plurality of horizontal arms over a circuit board. A pressure foot of each compressed air pressure cylinder is extendable when an air controller foot switch is depressed. Positioning of each of the cylinders is afforded along two axes, so that the cylinders may be positioned over components which are to be pressed against the circuit board. Heat sinks may be pressed against components located on the circuit board to bond the heat sinks to the components.

Abstract: A method and structure for improving the latch-up characteristic of semiconductor devices is provided. A dual depth STI is used to isolate the wells from each other. The trench has a first substantially horizontal surface at a first depth and a second substantially horizontal surface at a second depth which is deeper than the first depth. The n- and p-wells are formed on either side of the trench. A highly doped region is formed in the substrate underneath the second substantially horizontal surface of the trench. The highly doped region abuts both the first and the second wells and extends the isolation of the trench.

Abstract: A data reading method in a semiconductor storage device capable of storing three- or multi-valued data in one memory cell, in which the state of each memory cell is classified into a plurality of sets to thereby detect what set the present storage state of the memory cell belongs to. That is, several kinds of voltage values are applied to each memory cell to detect whether a current flows in the memory cell or not in accordance with the magnitude of the voltage values to thereby judge the present storage state of each memory cell.

Abstract: A heat-sensitive plate is substantially rectangular, has its one end portion fixed to a second terminal plate and has a movable contact mounted on the other end portion. The one side of the heat-sensitive plate facing a fixed contact forms a high expansion coefficient side and the other side a low expansion coefficient side. The heat-sensitive plate has a protrusion protrusively provided on the low expansion coefficient side centrally thereof by press working with a small outer diameter and a large curvature, and an annular press-thinned portion formed by press working concentrically with the protrusion and having an inner diameter appreciably larger than the outer diameter of the protrusion. In the initial state the heat-sensitive plate is held curved in a funnel shape protrusive about the protrusion on the low expansion coefficient side.