Abstract: A substantially parallel array of printed wiring boards (11A-E) each support a light source element (13A-E) and a light detector element (14A-E). Each light source element is connected to all of the light detector elements of the other printed wiring boards by optical fibers (18) supported in arcuate grooves (16) of an optical backplane member (12). Each source element is also connected to a source terminal (26) and each detector element is connected to a detector terminal (27), which permit bypass interconnections between selective source elements and detector elements. In another embodiment (FIGS. 10 and 11) a broad surface (33) of the optical backplane member (32) contacts edges of the printed wiring boards (31A-C).

Abstract: External connections are made in an electronic device (11) having on an upper surface an array of contact pads (12) by providing successively over the electronic device a first anisotropic member (13), a first flat insulator member (14) having on an upper surface a first conductor pattern (29), a second flat anisotropic conductor member (15), and a second flat insulator member (17) having on an upper surface a second conductor pattern (30). The two flat insulator members contain an array of conductive vias (25, 26) extending between opposite surfaces. The first anistropic conductor member (13) and a first array of conductive vias (25) extending through the first insulative member (14) interconnects a first plurality of contact pads (12) on the electronic device (11) to the first conductor pattern (29) which includes a peripheral array of contact pads (32) to which external connections are made.

Abstract: A turning mirror in an optical waveguide structure is made by etching in the upper surface of the structure a cavity (18) that intercepts the path of light propagated by the waveguide (15, 16, 13). Preferably, the cavity is made to be asymmetric with the side (25) of the cavity remote from the waveguide sloping at typically a forty-five degree angle. The asymmetry can be introduced by using mask and etch techniques and treating the surface of the structure such that the etchant undercuts the mask on the side of the cavity remote from the waveguide to a greater extent than it undercuts the mask on the side of the cavity adjacent the waveguide.

Abstract: A bundle (12) of optical fibers (13) is fixed in a matrix array by apertures in a guiding plate (14) and a securing plate (15). The apertures (18) in the guiding plate are larger than those in the securing plate and the securing plate apertures (17) are funnel-shaped to aid in insertion of the fibers. Each row of optical fibers may be inserted simultaneously by mounting the row on a uniquely designed vacuum holder (26).

Abstract: An antireflection coating (16) for use with a photolithographic process comprises a layer of organic material that planarizes the surface upon which a photoresist layer (21) is deposited, is highly absorptive of deep ultraviolet actinic light, and can be plasma etched along with an underlying metal layer (11), thereby obviating the need for a separate step to remove the exposed antireflection coating prior to metal etch.

Abstract: An integrated circuit device (11) is tested by directing a laser beam (19) onto an electrochromic member (17) in close proximity to a conductor (13) of the integrated circuit. Reflected laser light is directed to a detector (21) which converts it to an electrical signal for display by a lock-in amplifier (25). The display characterizes the voltage on the conductor (17) and thereby permits diagnosis of the operation of the integrated circuit (11).

Abstract: A laser (15) is mounted on a planar surface of a monocrystalline silicon mounting member (12). A spherical lens (20) is mounted in a monocrystalline silicon cover member (13) which, when abutted and registered to the mounting member (12), aligns the spherical lens with the laser so that the output light can be projected along a precise predetermined path. The spherical lens (20) is mounted in a first V-shaped groove (31) which is made in the cover member by masking and etching. A second V-shaped groove intersects the first groove and defines a V-shaped edge in one side of the first groove. The spherical lens is then seated in the first V-shaped groove such that it bears against two points of the V-shaped edge and against one side wall (35) of the first V-shaped groove. A second lens (19) is mounted in the cover member in the same manner as the first lens and directs laser light from a rear facet of the laser to a mirror 30 and hence to a photodetector (21) mounted in the cover member.

Abstract: In growing ingots of crystalline semiconductor material in a crucible, a seed crystal (35) contains a slot (36) which meshes with a wall portion (33) of the crucible for fixing the crystal orientation of the seed crystal with respect to the crucible. The crucible contains crystallographic reference flats (26 and 27) which are manifested as reference flats (26' and 27') of wafers cut from ingots grown in the crucible. The slots (36) in the seed crystal can be formed by forming slots (39) in a larger crystal (38) from which the seed crystals (35) are formed by coring.

Abstract: Optically nonlinear device elements such as directional couplers, switches, frequency stabilizers, optical parametric devices and modulators use as an optically nonlinear element a cross-linked triazine polymer containing a covalently bonded optically nonlinear dye moiety. A specific cross-linked triazine with this dye moiety may be made by cyclotrimerizing a p-(N,N-bis(4'-cyanatobenzyl)amino)-p'-(2,2-dicyanovinyl)azobenzene monomer. During polycyclotrimmerization or cure, the element is subjected to a poling voltage which aligns the dipoles of the dye moiety to give a large useful nonlinear susceptibility.

Abstract: In a flame hydrolysis method for depositing glass soot used ultimately to make optical fiber, a reactant that forms the glassy soot stream is delivered to the torch (20) in liquid form and an ultrasonic nozzle (34) in the torch atomizes the reactant or breaks the reactant into a fine mist without the use of a gas.

Abstract: An antireflection coating (21) for use in integrated circuit processing consists of a film of tungsten silicide (WSi.sub.0.45) or tungsten silicon nitride (WSiN). These coatings are preferably made by sputtering, with the tungsten silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.

Abstract: In an MOCVD reactor, gases are channeled around the periphery of a baffle plate (15) so as to flow radially inwardly along a slotted injection plate (16). The slots (22) in the injection plate extend radially and are of non-uniform width so as to compensate for a non-uniform rate of deposition. The resultant flow over a rotating heated substrate (17) gives a more uniform deposit of epitaxially grown material.

Abstract: In plasma enhanced chemical vapor deposition (PECVD) of silicon dioxide on a substrate, voids and discontinuities are reduced by first depositing silicon dioxide in a sputter each chamber (22) in which a magnetic field is produced within the rf plasma for depositing the silicon dioxide. Simultaneous sputter etch and deposition occurs which inhibits net deposition at the corners of metal conductors over which the silicon dioxide is deposited. The substrate is then removed and transferred through a load lock (27) to a conventional PECVD deposition chamber (23).

Abstract: An electronic device employs as a dielectric (17) a silicone resin consisting essentially of (a) about twenty-one to twenty-five percent by weight of a silicone resin consisting essentially of dimethylsiloxane, and/or dimethylmethylphenylsiloxane, and/or dimethyl-diphenylsiloxane, (b) about seventy to eighty percent by weight of a silica filler, (c) about 0.5 to 0.7 percent by weight of a tin catalyst, and (d) about 0.057 to 0.26 percent by weight of copper (II) benzoylacetonate.

Abstract: A mandrel (12) that is used for supporting a glass soot cylinder during consolidation into anoptical fiber preform is coated by chemical vapor deposition with a material selected from the group consisting of pyrolytic graphite and pyrolytic boron nitride.

Abstract: An ohmic contact to a III-V semiconductor material comprises substantially eighty to ninety-five percent by weight of tungsten, five to ten percent by weight of antimony, and zero to fifteen percent by weight of indium. The materials are simultaneously sputtered from separate targets in a sputtering reactor.

Abstract: An antireflection coating (21) for use in integrated circuit processing consists of a film of x-silicon-nitride, where x is a metal from the group consisting of titanium, vanadium, chromium, zirconium, niobium, molybdenum, hafnium, tantalum and tungsten. These coatings are preferably made by sputtering, with the x silicon nitride coating being made by sputtering in a nitrogen-containing atmosphere.

Abstract: In a compound semiconductor crystal growth process, the crucible (11) that contains the semiconductor melt is contacted on its opposite surface by a material (26) which, when melted, reacts with the crucible. The reacting material is melted along with the compound semiconductor material and thereafter reacts with the wall (24) of the crucible that contains the semiconductor melt. During the entire growth process, the wall is sufficiently thick to separate the reacting material from the compound semiconductor material, but is sufficiently thin that the reacting material significantly weakens its structural integrity. As a consequence, thermal stresses resulting from differential contraction of the compound semiconductor material and the wall during the cooling step are relieved by fracture of the crucible wall.

Abstract: A conductive interconnection (27) on a substrate (11) is made by applying a metal-organic compound (25) to the substrate, exposing the metal-organic compound to laser beam radiation (14) in which the power level has been ramped to some specific level and, thereafter, moving the substrate with respect to the laser beam. The movement of the substrate is at an applied rate of speed such that the temperature within the metal-organic compound impinged by the laser beam is properly ramped with respect to time. This leaves a dependable metal deposition (27) which may be monitored through a viewing system (21).

Abstract: An electronic device is encapsulated by a curable material which, prior to cure, consists essentially of (a) 33 to 39 percent of a silicone resin selected from the group consisting of (i) polydimethylsiloxane, containing a platinum catalyst and having functional components selected from the group consisting of vinyl and hydride functional components, (ii) polymethylphenylsiloxane containing a platinum catalyst and having functional components selected from the group consisting of vinyl and hydride functional components, and (iii) a mixture of (i) and (ii), (b) 51 to 57 weight percent of silicon dioxide and (c) 8 to 12 weight percent of a low vapor pressure organic solvent, preferably an alcohol ester.