Abstract: An A/D converter includes: a first comparator that compares an input signal, with a first reference signal which is a ramp wave having a predetermined polarity, and that when the input signal matches the first reference signal, reverses an output signal thereof; a second comparator that compares the input signal, with a second reference signal which is a ramp wave having a different polarity from the first reference signal, and that when the input signal matches the second reference signal, reverses an output signal thereof; and a counter capable of counting up so as to measure the comparison times taken by the first comparator and second comparator, wherein when either of the output signal of the first comparator and the output signal of the second comparator is first reversed, the counter ceases a counting action.
Abstract: Provided is a magnetoimpedance (MI) sensor having a high magnetic sensor sensitivity and a wide measurement range. The MI sensor comprises an MI element, an electric current supply unit and a signal processing circuit. The MI element comprises a magnetosensitive wire formed of an amorphous soft magnetic alloy having zero magnetostriction, and a detection coil provided around the magnetosensitive wire with an electric insulator disposed therebetween, thereby detecting voltage generated at the detection coil and corresponding to an external magnetic field upon application of a high frequency electric current to the magnetosensitive wire. The electric current supply unit supplies the high frequency electric current to the MI element. The signal processing circuit processes an output signal from the detection coil.
Abstract: A short arc type discharge lamp comprises a pair of electrodes, at least one of which has an electrode main body portion and an axis portion and/or a taper portion formed between the electrode main body portion and the axis portion, wherein in the at least one of the electrodes, the axis portion has an outer diameter smaller than that of the electrode main body portion, and at least one groove extending in an axis line direction of the electrode is formed in the electrode main body portion, the axis portion or the taper portion.
Abstract: The invention relates to a backflush device (6) for a filter system (1) for removing impurities from a fluid, the backflush device (6) serving to backflush a filter body (3) in the filter system separating the clean side (5) from the inlet side (4), and comprising at least one backflush nozzle (7) for applying a rinse medium to the filter body (3), said nozzle comprising at least one opening (8) through which the rinse medium flows in a flow direction (9) during backflushing and exits the backflush nozzle (7). In order to improve the effectiveness of the backflushing, the at least one opening is designed as a slit opening (8) extending transverse to the flow direction (9) in a straight line having a constant cross-sectional profile (16) comprising a nozzle segment (17) expanding the flow direction (9).
July 22, 2008
Date of Patent:
January 8, 2013
Mahle International GmbH
Markus Pracher, Albert Schick, Dietrich Stötzer
Abstract: To provide a solid-state imaging device able to improve light transmittance of a transparent insulation film in a light incident side of a substrate, suppress the dark current, and prevent a quantum efficiently loss, wherein a pixel circuit is formed in a first surface of the substrate and light is received from a second surface, and having: a light receiving unit formed in the substrate and for generating a signal charge corresponding to an amount of incidence light and storing it; a transparent first insulation film formed on the second surface; and a transparent second insulation film formed on the first insulation film and for retaining a charge having the same polarity as the signal charge in an interface of the first insulation film or in inside, thicknesses of the first and second insulation film being determined to obtain a transmittance higher than when using only the first insulation film.
Abstract: A water tube WT of a heat exchanger B includes a helical tube body 5 which includes a plurality of loops 50 arranged in the axial direction. At least one of the loops 50 includes an inclined tube portion which is inclined with respect to the axial direction and a non-inclined tube portion extending perpendicularly to the axial direction. The inclined tube portion is provided at each of opposite end regions s2a and s2b in a width direction crossing the axial direction, whereas the non-inclined tube portion is provided at an intermediate region S1 in the width direction. With this structure, the pitch p2 of the loops 50 is reduced. Therefore, by increasing the number of loops 50, high heat exchange efficiency is achieved without considerably increasing the size of the helical tube body 5.
Abstract: A carrier for engaging a panel and a method of making a carrier for engaging a panel are disclosed. The carrier generally includes a base portion, an attachment member disposed on the base portion which is operable to engage a panel, and a springbar disposed on the base portion. The method generally includes forming a base portion, forming an attachment member, and forming a springbar on the base portion. The attachment member cooperates with the base portion to define a maximum panel thickness, and the springbar engages panels having a thickness less than or equal to the maximum panel thickness to provide tension between the base portion and a panel.
Abstract: Driving a display apparatus by performing write processing for applying an auxiliary video signal to a corresponding data line, then, applying a video signal, instead of the auxiliary video signal, to the corresponding data line, and in a state where a predetermined drive voltage is applied from a power supply portion to one area of the source and drain areas of a drive transistor, applying a voltage based on the auxiliary video signal and a voltage based on the video signal from the corresponding data line to the gate electrode of the drive transistor through a write transistor which is turned on in response to a scanning signal from the corresponding scanning line.
Abstract: Disclosed herein is a display apparatus has a pixel array section including: pixel circuits which are each provided with a driving transistor and an electro-optical device and are laid out to form a matrix; and a draw wire provided in each of the pixel circuits to serve as a wire connecting the driving transistor to a power-supply providing line, wherein the resistance of the draw wire is relatively large in the pixel circuit close to a source applying a power-supply voltage to the power-supply providing line.
Abstract: A solid-state imaging device is provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.
Abstract: A display device includes: a pixel array unit having pixels including a circuit configuration, in which a first electrode of an electro-optical element and a source electrode of a driving transistor are connected together, a gate electrode of the driving transistor and a source electrode or a drain electrode of a writing transistor are connected together, a holding capacitor is connected between the gate electrode and the source electrode of the driving transistor, and an auxiliary capacitor is connected between the first electrode and a second electrode of the electro-optical element, disposed on a substrate in a matrix shape, wherein, from one pixel of adjacent pixels to an area of the other pixel, the auxiliary capacitor of the one pixel is set to be disposed, and an electrode of the auxiliary capacitor that is disposed on the electro-optical element side is conductive with the second electrode of the electro-optical element.
Abstract: A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357?a?0.408), and has a thickness of from 10 nm to 20 nm both inclusive.
Abstract: A display device includes a pixel array unit including pixels arranged in a matrix, the pixels each including an electrooptical element, a writing transistor for writing an image signal, a storage capacitor for storing the image signal, and a driving transistor for driving the electrooptical element in accordance with the image signal, the pixels each having a threshold correction process function for, before light emission of the electrooptical element, changing a source potential of the driving transistor to a potential obtained by subtracting a threshold voltage of the driving transistor from an initial gate potential of the driving transistor; and a power supply unit configured to set, as a power supply potential of a power supply line for supplying a current to the driving transistor, different potential values for a threshold correction period for execution of the threshold correction process and a light-emission period for the electrooptical element.
Abstract: An image display device includes a display portion formed by disposing pixel circuits in a matrix, and a signal line driving circuit and a scanning line driving circuit for driving the pixel circuits through signal lines and scanning lines of the display portion. The pixel circuit includes at least: a light emitting element; a drive transistor for current-driving the light emitting element by a drive current corresponding to a gate-to-source voltage thereof; a hold capacitor composed of either one capacitor or a plurality of coupling capacitors for holding therein the gate-to-source voltage; and a write transistor adapted to be turned ON/OFF in accordance with a write signal outputted from the scanning line driving circuit, thereby setting a voltage developed across terminals of the hold capacitor at a voltage of corresponding one of the signal line.
Abstract: A semiconductor integrated circuit able to reduce a load of layout design when arranging switches in a power lines for preventing leakage current and able to reduce the influence of a voltage drop occurring in the switches on a signal delay, wherein a plurality of groups of power lines are arranged in stripe shapes, power is supplied to circuit cells by a plurality of groups of branch lines branching from the groups of power lines, power switch cells arranged in the groups of branch lines turn on or off the supply of power to the circuit cells, the power switch cells are arranged dispersed in the area of arrangement of the circuit cells, and the supply of power by the power switch cells is finely controlled for every relatively small number of circuit cells.