Abstract: The present invention relates to micro-mechanical devices including actuators, motors and sensors with improved operating characteristics. A micro-mechanical device (10) comprising a DMD-type spatial light modulator with a getter (100) located within the package (52). The getter (100) is preferably specific to water, larger organic molecules, various gases, or other high surface energy substances. The getter is a non-evaporable getter (NEG) to permit the use of active metal getter systems without their evaporation on package surfaces.

Abstract: A method for multiple phase light modulation, said method comprising providing a pixel (20) having at least two modulating elements (22), (24). The method further comprising addressing said at least two modulating elements (22), (24) whereby light incident on said addressed element undergoes discrete phase changes between addressable states. The method further comprises resolving light from said at least two modulating elements (22), (24), into a response having at least three unique phases. Other devices, systems and methods are also disclosed.

Abstract: A method of separating wafers, such as those used for semiconductor device manufacture, into die. A partly fabricated wafer is covered with a protective coating over its top surface (10). The wafer is then inscribed to define separation lines between die, with the separation lines being of a predetermined depth (12). The protective coating is then removed (14), and at least one processing step is performed at the wafer level (15, 22-24), before the inscribed wafer is separated into die. Then, the wafer is separated into die along the separation lines (17).

Abstract: A self-contained system containing an antenna, a circuit board, and a power source. The antenna consists of two loop elements mounted perpendicular to each other on a circular metal plate that acts both as part of the radiating system and as a shield between the circuitry and the radiator. The circuit board includes a transmitter, a receiver, and other circuitry for storing information and executing software. The antenna has a high gain, is omnidirectional in two orthogonal polarizations, and has a high degree of isolation between the two loop elements. To achieve omnidirectionality, in one mode, the antenna operates by using each loop element in a time-sequence of brief on/off states. In another mode, the transceiver uses both loop elements simultaneously with the signals on the two loop elements in phase quadrature.

Abstract: A spatial light modulator includes a reflector which is electrostatically deflectable out of a normal position, whereat a supporting beam is unstressed, into a deflected position, whereat a portion of the mirror contacts a portion of a landing electrode at the same electrical potential as the reflector. An inorganic layer or solid lubricant is deposited on the contacting portions. After the modulator is operated for a period of time, the tendency of the reflector to stick or adhere to the landing electrode is diminished or eliminated by the layer so that the reflector is returned to its normal position without any reset signal or with a reset signal having a reasonably low value. Preferred materials for the layer are SiC, AlN or SiO.sub.2.

Abstract: A method for fabricating a DMD spatial light modulator (10, 66) using an aluminum hard mask (40,50,80,90). The DMD superstructure (14,16) is comprised entirely of titanium tungsten (TiW), whereby the hinge (14) and beam (16) are patterned by a respective thin aluminum hard mask. A very rigid superstructure (14,16) is achieved, and the use of a sacrificial oxide hard mask is avoided. With the thin aluminum hard mask (40,80), good step coverage of subsequent layers is achieved. Relatively few semiconductor processing steps are required, with the titanium tungsten layers (32,44,72,84) being etched away with a fluorinated plasma. In one embodiment, the photoresist spacer layer (30) is never exposed to a fluorinated plasma.

Abstract: A method and apparatus for forming semiconductor particles (42) for solar cells using an optical furnace (30). Uniform mass piles (26) of powered semiconductor feedstock are almost instantaneously optically fused to define high purity semiconductor particles without oxidation. The high intensity optical energy is directed and focused to the semiconductor feedstock piles (26) advanced by a conveyer medium (16) thereunder. The semiconductor feedstock piles (26) are at least partially melted and fused to form a single semiconductor particle (42) which can be later separated from a refractory layer (18) by a separator (50), preferably comprised of silica. The apparatus (10) and process is automated, providing a high throughput to produce uniform mass, high quality spheres for realizing high efficiency solar cells. The apparatus is energy efficient, whereby process parameters can be easily and quickly established.

Abstract: An electrically addressable, integrated, monolithic, micromirror device (10) is formed by the utilization of sputtering techniques, including various metal and oxide layers, photoresists, liquid and plasma etching, plasma stripping and related techniques and materials. The device (10) includes a selectively electrostatically deflectable mass or mirror (12) of supported by one or more beams (18) formed by sputtering and selective etching. The beams (18) are improved by being constituted of an electrically conductive, intermetallic aluminum compound, or a mixture of two or more such compounds. The materials constituting the improved beams (18) have relatively high melting points, exhibit fewer primary slip systems than FCC crystalline structures, are etchable by the same or similar etchants and procedures used to etch aluminum and aluminum alloy, and are stronger and experience less relaxation than aluminum or aluminum alloys.

Abstract: A spatial light modulator (10) of the DMD type having increased performance parameters. A pixel mirror (30) is supported by a yoke (32), whereby electrostatic attraction forces (70, 76, 80, 82) are generated between several structures. First, between the elevated mirror (30) and an elevated address electrode (50, 52). Second, between the yoke (32) and an underlying address electrode (26, 28). The pixel (30) achieves high address torque, high latching torques, high reset forces, and greater address margins over previous generation devices. The proximity of the yoke (32) over the substrate address electrodes (26, 28) realizes large attraction forces whereby the pixel is less susceptible to address upset, requires lower reset voltages and provides higher switching speeds.

Abstract: A microminiature, variable electrical device, such as a capacitor (40a), comprises an elemental DMD SLM (40'), which includes a substrate (43) and a member (145) spaced therefrom and mounted for movement by appropriate facilities (42, 44). A control signal (102) is applied to the movable member (145) to produce an electric field between it and either the substrate (43) or an associated control electrode (46a). The field moves the member (145) toward or away from either the substrate (43) or an associated output electrode (46b) to selectively adjust the spacing therebetween. The field is produced by addressing circuitry (45) associated with the substrate (43). The movable member (145) and either the substrate (43) or the output electrode (46b) function as capacitor plates, and the spacing determines the capacitance thereof. The capacitor (40a) may be placed in series (FIG. 4) or in parallel (FIG. 3) with an input signal (114) applied to the movable member (145).

Abstract: A micro-mechanical device (10) includes relatively movable elements (11, 17) which contact or engage and which thereafter stick or adhere. A perfluoropolyether (PFPE) film (31) is applied to the contacting or engaging portions of the elements (11,17) to ameliorate or eliminate such sticking or adhesion.

Abstract: A method of fabricating a digital micromirror device (DMD) (10) spatial light modulator (SLM) with a hardened superstructure hinge (16). The invention comprises strengthening a hinge layer material (36) by ion implantation before etching the hinge layer material (36) to form the hinge (16), but could be implanted after etching the hinge (16). The ion implantation is applied with a predetermined energy to concentrate the implanted material (62) at the center of the hinge layer material (36). The entire process is performed using conventional robust semiconductor processes, at low temperatures. Through ion implantation, the DMD hinge (16) is strengthened to minimize or eliminate the possibility of creep. A combination of ions could be implanted if desired. The ion chosen is based on the solubility of the hinge material.

Abstract: A flexible cover (14) for a flexible solar cell (12) protects the cell from the ambient and increases the cell's efficiency. The cell(12)includes silicon spheres (16) held in a flexible aluminum sheet matrix (20,22). The cover (14) is a flexible, protective layer (60) of light-transparent material having a relatively flat upper, free surface (64) and an irregular opposed surface (66). The irregular surface (66) includes first portions (68) which conform to the polar regions (31R) of the spheres (16) and second convex (72) or concave (90) portions (72 or 90) which define spaces (78) in conjunction with the reflective surface (20T) of one aluminum sheet (20). Without the cover (14) light (50) falling on the surface (20T) between the spheres (16) is wasted, that is, it does not fall on a sphere (16).

Abstract: A flexible cover (14) for a flexible solar cell (12) protects the cell from the ambient and increases the cell's efficiency. The cell (12)includes silicon particles (16) held in a flexible aluminum sheet matrix (20,22). The cover (14) is a flexible, protective layer (60) of a light-transparent material such as a fluoropolymer, preferably TEFZEL.RTM. film having a relatively flat upper, free surface (64) and an opposed surface (66) coated with an adhesive, preferably EVA. The surface (66) is applied to the particles (16) so as to include first portions (68) which conform to the poles (31 P) and the polar regions (31R) of the particles (16) and second, projecting convex (72) or concave (90) prism-like portions which define spaces (78) in conjunction with the reflective surface (20T) of one aluminum sheet (20). Without the cover (14), light (50) falling on the surface (20T) between the particles (16) is wasted, that is, it does not fall on a particle (16).

Abstract: Particles (10) contained in a mass of liquid etchant (12) and being wetted and etched thereby are moved into a mass of an inert, etching-terminating liquid (14) which abuts the etchant mass by overcoming surface tension forces exerted on the particles by the etchant at the interface (16,70) of the liquid masses. A vortex (24) of the inert liquid (14) is forced and in turn forces a conformal vortex (60) of the etchant (12) with the particles (10) therein. Turbulence at the interface (70) of the vortices (24,60) and vortex-generated centrifugal force on the particles (10) overcome the surface tension forces, and the particles move into the inert liquid (14).

Abstract: Active sites (18) on a semiconductor wafer (14) are protected from particulate and fluid contaminants (40,42)while the wafer (14) is sawed into chips (16) by a tape (62) carrying a pattern of adhesive (64) which is congruent and registerable with saw paths (15) between the active sites (18). Adhering the tape (62) to the wafer (14) encapsulates each active site (18) beneath a non-adherent protective envelope which if formed by adhesive-free portions (68) of the tape (62) as sawing occurs along the saw paths (15) and the congruent adhesive pattern (64). After sawing, the adhesive (64) is treated, as by directing UV through the tape (62), to release the tape (62) from the chips (16).

Abstract: A method of manufacturing semiconductor particles (30) of uniform mass. A template (12) is used to meter out uniform mass piles (28) of semiconductor feedstock upon a refractory layer (14). These piles (28) of semiconductor feedstock are then melted briefly to obtain semiconductor particles (30) of uniform mass. Silica is the preferred refractory layer, and is separated from the particles after the melt procedure. Subsequent melt procedures can be implemented to ultimately obtain perfect spheres of the semiconductor material. The present invention is well suited for forming semiconductor spheres to be implemented in photovoltaic solar cells. Semiconductor grade or metallurgical grade feedstock can be implemented to obtain particles of high purity. High yields of uniformly massed spheres can be obtained to produce high efficiency photovoltaic cells at a moderate cost.