Patents Represented by Attorney Robert J. Wallace

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  • Method of making adherent score-resistant coating for metals
    Patent number: 4618505
    Abstract: A bearing element having an adherent score-resistant coating on its surface comprising a carbonized layer of an organic resin in which the layer is carbonized by ion implantation. The ion implantation is controlled to not only provide graphite-like and diamond-like structures in the carbonized coating but to also produce chemical bonding between carbon atoms of the resultant coating and atoms of the bearing surface.
    Type: Grant
    Filed: August 19, 1985
    Date of Patent: October 21, 1986
    Assignee: General Motors Corporation
    Inventors: Bernard A. MacIver, James C. Erskine, Jr., John C. Bierlein
  • Thyristor with turn-off FET
    Patent number: 4611235
    Abstract: A new semiconductor power device, suitable for electrical switching in automotive applications, is proposed. This device combines the low specific on-resistance achievable with bipolar regenerative switching devices with the convenience of insulated gate control of not only turn-on but also turn-off. A device structure is presented that also includes a pinch resistance effect to more rapidly produce turn-off.
    Type: Grant
    Filed: June 4, 1984
    Date of Patent: September 9, 1986
    Assignee: General Motors Corporation
    Inventor: Jayant K. Bhagat
  • Junction-MOS power field effect transistor
    Patent number: 4611220
    Abstract: A thin film insulated gate field effect transistor having an opposite conductivity type island in its channel region. The island is electrically shorted to the transistor gate electrode.
    Type: Grant
    Filed: November 16, 1983
    Date of Patent: September 9, 1986
    Assignee: General Motors Corporation
    Inventor: Bernard A. MacIver
  • Lead-europium selenide-telluride heterojunction semiconductor laser
    Patent number: 4608694
    Abstract: A double heterojunction lead salt diode infrared laser having an active region layer of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region layer is sandwiched between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium-containing lead chalcogenide layers have an energy band gap greater than the active region layer and an index of refraction less than the active region layer. Hence, the laser has lattice matching, as well as enhanced carrier confinement and optical confinement.
    Type: Grant
    Filed: December 27, 1983
    Date of Patent: August 26, 1986
    Assignee: General Motors Corporation
    Inventor: Dale L. Partin
  • Method for more uniformly spacing features in a semiconductor monolithic integrated circuit
    Patent number: 4586243
    Abstract: The unique initial masking step is used in a method of more predictably and uniformly spacing features on a surface of a semiconductor device by combinining it with two dielectric maskants. A unique semiconductor device masking is claimed in which semiconductor device features are initially spaced by means of pitch, i.e. line and a contiguous space, instead of just a line in the initial masking.
    Type: Grant
    Filed: November 19, 1984
    Date of Patent: May 6, 1986
    Assignee: General Motors Corporation
    Inventors: John R. Weaver, II, Nathaniel D. McClure
  • Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
    Patent number: 4575921
    Abstract: A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and self-aligned with functional regions.
    Type: Grant
    Filed: October 1, 1984
    Date of Patent: March 18, 1986
    Assignee: General Motors Corporation
    Inventor: Jayant K. Bhagat
  • Lead-ytterbium-tin telluride heterojunction semiconductor laser
    Patent number: 4577322
    Abstract: A double heterojunction lead salt diode infrared laser having an active region of a lead salt semiconductor of a given lattice constant, energy band gap, and index of refraction. The active region is sandwiched between two lead salt semiconductor layers containing ytterbium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active layer. In addition, the ytterbium-containing lead salt layers have an energy band gap greater than the active layer and an index of refraction less than the active layer. Hence, the laser has lattice matching, as well as enhanced, carrier confinement and optical confinement.
    Type: Grant
    Filed: October 19, 1983
    Date of Patent: March 18, 1986
    Assignee: General Motors Corporation
    Inventor: Dale L. Partin
  • Reducing hydrogen content of vacuum deposited films
    Patent number: 4571348
    Abstract: A method of treating thin films containing a significant atomic proportion of hydrogen to enable such films to be subjected to elevated temperatures without blistering. The films are subjected to a significant, i.e. damaging, high implantation prior to heat treatment.
    Type: Grant
    Filed: August 8, 1984
    Date of Patent: February 18, 1986
    Assignee: General Motors Corporation
    Inventor: John R. Troxell
  • Metal bearing surface having an adherent score-resistant coating
    Patent number: 4554208
    Abstract: A bearing element having an adherent score-resistant coating on its surface comprising a carbonized layer of an organic resin in which the layer is carbonized by ion implantation. The ion implantation is controlled to not only provide graphite-like and diamond-like structures in the carbonized coating but to also produce chemical bonding between carbon atoms of the resultant coating and atoms of the bearing surface.
    Type: Grant
    Filed: November 23, 1984
    Date of Patent: November 19, 1985
    Assignee: General Motors Corporation
    Inventors: Bernard A. MacIver, James C. Erskine, Jr., John C. Bierlein
  • Uses for buried contacts in integrated circuits
    Patent number: 4547959
    Abstract: An integrated circuit is made that includes an insulated gate transistor and a buried contact. The buried contact is used to divide an active device area in two discrete parts, that are doped during source-drain doping in other active device mesas of the integrated circuit. Discrete contacts to these regions, along with the buried contact, provide an additional type of electrical component in the integrated circuit, such as a bipolar lateral transistor.
    Type: Grant
    Filed: February 22, 1983
    Date of Patent: October 22, 1985
    Assignee: General Motors Corporation
    Inventor: Randy A. Rusch
  • Reactive ion etching of tin oxide films using silicon tetrachloride reactant gas
    Patent number: 4544444
    Abstract: High resolution patterns can be etched in tin oxide films in one step using reactive ion etching when the reactant gas consists essentially of silicon tetrachloride (SiCl.sub.4).
    Type: Grant
    Filed: August 15, 1984
    Date of Patent: October 1, 1985
    Assignee: General Motors Corporation
    Inventor: Shih-Chia Chang
  • Method for more uniformly spacing features in a lateral bipolar transistor
    Patent number: 4544940
    Abstract: The unique initial masking step is used in a method of more predictably and uniformly spacing features on a surface of a semiconductor device by combining it with two dielectric maskants. A unique semiconductor device masking is claimed in which semiconductor device features are initially spaced by means of pitch, i.e. line and a contiguous space, instead of just a line in the initial masking.
    Type: Grant
    Filed: January 14, 1983
    Date of Patent: October 1, 1985
    Assignee: General Motors Corporation
    Inventors: John R. Weaver, II, Nathaniel D. McClure
  • Metal bearing element with a score-resistant coating
    Patent number: 4540636
    Abstract: A bearing element having an adherent score-resistant coating on its surface comprising a carbonized layer of an organic resin in which the layer is carbonized by ion implantation. The ion implantation is controlled to not only provide graphite-like and diamond-like structures in the carbonized coating but to also produce chemical bonding between carbon atoms of the resultant coating and atoms of the bearing surface.
    Type: Grant
    Filed: December 27, 1983
    Date of Patent: September 10, 1985
    Assignee: General Motors Corporation
    Inventors: Bernard A. Mac Iver, James C. Erskine, Jr., John C. Bierlein
  • Life extension of catalyst predip baths
    Patent number: 4532887
    Abstract: A method and apparatus for extending the useful life of an acqueous acid chloride solution that serves as a protective bath for an activator dip bath such as used in electroless copper plating. Means are provided for recirculating the acidic chloride solution over metallic tin to precipitate copper ions from the solution. The precipitated copper is filtered from the solution to extend its useful life.
    Type: Grant
    Filed: June 21, 1984
    Date of Patent: August 6, 1985
    Assignee: General Motors Corporation
    Inventor: Robert B. Forsterling
  • Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
    Patent number: 4528211
    Abstract: A method of forming a silicon nitride coating in situ on a silicon surface by ion milling. The ion milling and silicon nitride formation process are uniquely integrated in semiconductor manufacturing methods to provide several benefits, including contact areas being substantially registered with and self-aligned with functional regions.
    Type: Grant
    Filed: November 4, 1983
    Date of Patent: July 9, 1985
    Assignee: General Motors Corporation
    Inventor: Jayant K. Bhagat
  • High rate sputtering of exhaust oxygen sensor electrode
    Patent number: 4521287
    Abstract: A method of sputtering a platinum exhaust gas electrode onto a vitrified zirconia thimble for an electrochemical-type exhaust gas oxygen sensor. Porous high surface area films are consistently deposited at high rates. A DC magnetron cathode assembly having a magnetic field strength of at least 500 gauss across its target face is used at a sputtering power of about 4-9 kilowatts. A thimble-target spacing of less than about 3.0 cm, a pressure less than about 10 millitorr, a sputtering atmosphere consisting essentially of more than about 50 percent nitrogen and/or oxygen, an electrically isolated deposition surface, and an electrically floating reference electrode precoated on the zirconia thimble surface are used.
    Type: Grant
    Filed: June 28, 1984
    Date of Patent: June 4, 1985
    Assignee: General Motors Corporation
    Inventor: Howard D. Kisner
  • Power transistor protection from substrate injection
    Patent number: 4496849
    Abstract: A PN junction-isolated bipolar integrated circuit having a power transistor protected from delay in turn-off by a parasitic substrate injection. Protection is obtained by interposing an additional isolation pocket between an isolating pocket producing the substrate injection and an isolation pocket for an input transistor for the power transistor, and coupling the additional isolation pocket to the base of the power transistor.
    Type: Grant
    Filed: February 22, 1982
    Date of Patent: January 29, 1985
    Assignee: General Motors Corporation
    Inventor: Thomas W. Kotowski
  • Lead frame for molded integrated circuit package
    Patent number: 4490902
    Abstract: A lead frame for a molded semiconductor device package. The lead frame has a pattern of finger leads with convergent free inner ends and dam bars between adjacent finger leads. The dam bars are partially severed from their contiguous finger leads due to cuts on their edges intended to face a body member molded over the finger lead inner ends. The partially severed dam bar edge is preferably positioned to be substantially at the periphery of the molded body member. The resultant molded body member can thus have a finished surface even between the finger leads as molded and dam bar cutting die wear reduced.
    Type: Grant
    Filed: September 3, 1982
    Date of Patent: January 1, 1985
    Assignee: General Motors Corporation
    Inventors: Charles T. Eytcheson, Phillip A. Lutz, Harold L. Fields
  • Isolated integrated circuit transistor with transient protection
    Patent number: 4486770
    Abstract: An integrated circuit having a bipolar transistor with an integral base region resistor. The resistor coacts with an isolation wall extension in the integrated circuit to provide compact integral protection against transient polarity reversal between contacts to the resistor and the transistor collector.
    Type: Grant
    Filed: April 27, 1981
    Date of Patent: December 4, 1984
    Assignee: General Motors Corporation
    Inventor: Gary K. Woodward
  • Life extension of catalyst predip baths
    Patent number: 4481236
    Abstract: A method and apparatus for extending the useful life of an aqueous acid chloride solution that serves as a protective bath for an activator dip bath such as used in electroless copper plating. Means are provided for recirculating the acidic chloride solution over metallic tin to precipitate copper ions from the solution. The precipitated copper is filtered from the solution to extend its useful life.
    Type: Grant
    Filed: May 2, 1983
    Date of Patent: November 6, 1984
    Assignee: General Motors Corporation
    Inventor: Robert B. Forsterling