Abstract: A data processing system (15) including a synchronous random access memory (30) and a method for accessing the synchronous random access memory are disclosed. A digital processor (20) of the data processing system is coupled to with a system clock circuit (65) that produces a system clock signal for controlling operation of the digital processor. Addressable storage cells within the synchronous random access memory are accessed in response to the system clock signal and an address select signal (ADS) to write data into the storage cells or read data out from the storage cells. Initial row and column addresses are latched into a row address buffer (48) and a column address buffer (49). A number of data bits corresponding to a control signal such as a wrap length (WL) signal are read out from the memory in synchronization with the system clock signal. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.

Abstract: A circuit is designed to receive a plurality of index signals (320, 321). The circuit includes a memory circuit arranged to store a plurality of state vectors (400-403). A multiplex circuit (406) is coupled to the memory circuit. The multiplex circuit selectively produces one of the state vectors (408) in response to at least one of the index signals (320). A matrix generator circuit (410) is arranged to produce a variable matrix in response to at least another of the index signals (321). A logic circuit (600-602) is coupled to the multiplex circuit and the matrix generator circuit. The logic circuit is arranged to produce a logical combination (412) of the variable matrix and said one of the state vectors.

Abstract: A communication circuit is designed with a processing circuit (11) coupled to receive a plurality of first control signals (402, 408) from a source external to the communication circuit. The processing circuit produces a second control signal (432, 434) and a second power control (422, 436) signal during each of a plurality of predetermined time periods. The second power control signal is determined by a corresponding first control signal from said plurality of first control signals. The second power control signal is produced proximate the second control signal. A serial circuit is coupled to receive the second control signal and the second power control signal during a respective predetermined time period. The serial circuit produces the second control signal proximate the second power control signal.

Abstract: An input circuit is designed with an external terminal (104). A first input transistor (108) has a control gate coupled to the external terminal by a low resistance path (104). The first input transistor has a current path coupled to an output terminal (120). A first series transistor (110) has a control gate and a current path. The current path of the first series transistor is connected in series with the current path of the first input transistor. A primary clamp (102) is coupled to the external terminal.

Abstract: An integrated circuit substrate bias pumping arrangement includes a charge pump circuit arranged as a circuit path from an oscillator input to a substrate. The charge pump circuit operates to supply charge to the substrate in response to a level of the oscillator signal. In the charge pump circuit, a pumping transistor transfers stored charge from a pumping capacitor to the substrate without imparting all of a threshold voltage of the pumping transistor as a voltage loss. The pumping transistor has its conduction path connected in a series circuit between the pumping capacitor and the substrate. A control gate electrode of the pumping transistor is bootstrapped to turn on the pumping transistor by a delayed version of the input signal used for pumping stored charge from the pumping capacitor to the substrate. Two of the charge pump circuits can be operated in a push-pull configuration, substrate bias pump.

Abstract: A counter (450) for generating a series of binary addresses, each of the addresses including a set of one or more most-significant bits. The counter includes circuitry to generate the addresses, including the set of most-significant bits (402), in a first mode and circuitry to generate the addresses (400), excluding the set of most significant bits, in a second mode. The counter is operable to transition between the first and second modes. The counter also includes circuitry to generate the addresses in the first mode in a non-binary count order in which the set of most-significant address bits is a set of least-significant bits in the count order.

Abstract: An integrated circuit includes a voltage supply internal to the integrated circuit and circuitry for sensing the voltage level of the internal voltage supply, the circuitry responsive to produce a flag signal, VPUEN, that is in a first logical state when the voltage level is below the desired level and in a second logical state when the voltage level is above the desired level. The integrated circuit also includes a buffer driver 406 having an input terminal and an output terminal, the input terminal being coupled to the circuitry for sensing the voltage level of the internal voltage supply. The operation of the circuit is such that the output terminal 400 of the buffer driver is in a high-impedance state when the flag signal is in the first logical state, and is responsive to data signals on the input terminal to produce corresponding output signals at the output terminal when the flag signal is in the second logical state.

Abstract: A memory circuit for operating synchronously with a system clock signal is designed with a memory array (250, 252, 254, 256) having a plurality of memory cells arranged in rows and columns. Each column decode circuit of a plurality of column decode circuits (502) produces a select signal at a respective column select line (108) in response to a first column address signal. A plurality of sense amplifier circuits (202) is arranged in groups. Each sense amplifier circuit is coupled to a respective column of memory cells. Each sense amplifier circuit includes a select transistor for coupling the sense amplifier to a respective data line (203). A control terminal of each select transistor of a group of sense amplifier circuits is connected to the respective column select line. A data sequence circuit (218) is coupled to receive four data bits from four respective data lines (210, 212, 214, 216) in response to a first cycle of the system clock signal.

Abstract: A semiconductor memory device includes an array of storage cells, each cell having a transfer transistor with a gate electrode. A separate wordline 32 interconnects the gate electrodes of each row of the storage cells. A first conductive layer includes stripes 38, each stripe overlying a different row of the storage cells and connecting to the wordline and the gate electrodes of the storage cells of a different odd numbered row of the storage cells. An insulator surrounds the stripes of the first conductive layer. A second conductive layer, separated from the stripes of the first conductive layer by the insulator, includes stripes 39, each stripe of the second conductive layer overlying a different even numbered row of storage cells and connecting to the wordline and the gate electrodes of the different even numbered row of storage cells.

Abstract: A memory circuit is designed with a memory array (113, 115, 117, 119) having a plurality of banks. Each bank is addressable in response to a bank address signal (102), and each bank arranged in rows and columns of memory cells. Each of plural data leads (122) corresponds to a bank. Each data lead is selectively connected to a column of memory cells by a respective select transistor. A first decode circuit (501) has at least one input and one output terminal. The output terminal (525) is coupled to a control gate of at least one of the select transistors. Each of a plurality of second decode circuits (231) corresponds to a respective bank. Each second decode circuit has a memory element (423, 425, 428)), a plurality of input terminals and at least one output terminal. One second decode circuit input terminal (227) is coupled to receive a first address signal. Another second decode circuit input terminal (229) is coupled to receive the bank address signal.

Abstract: A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.

Abstract: A circuit for charging or discharging a capacitive load. The circuit includes a buffer driver comprising first and second input terminals and an output terminal, and a reference voltage generator coupled to the buffer driver. The reference voltage generator includes an enablement signal terminal, first and second reference voltage terminals, and a circuit operable to provide first and second reference voltages at the first and second reference voltage terminals in response to a first signal at the enablement terminal. The reference voltage generator also provides first and second rail voltages in response to a second signal at the enablement terminal.

Abstract: A circuit is designed with a delay circuit (102) coupled to receive a frequency-modulated data signal (100) at a delay input terminal. The delay circuit produces the data signal (103) after a predetermined delay at a delay output terminal. An exclusive OR circuit (104) has a first input terminal coupled to the delay input terminal and has a second input terminal coupled to the delay output terminal.

Abstract: A clock circuit including an input terminal (300) for receiving a clock signal and a first pulse generator (302) coupled to the input terminal. The first pulse generator is operable to generate a voltage pulse in response to a logic-low voltage to logic-high voltage transition of the clock signal. The circuit also includes a second pulse generator (304) coupled to the input terminal, the second pulse generator being operable to generate a voltage pulse in response to a logic-high voltage to logic-low voltage transition of the clock signal. A first clock deskewing circuit (306) is coupled between the first pulse generator and a first clock signal output terminal and a second clock deskewing circuit (308) is coupled between the second pulse generator and a second clock signal output terminal.

Abstract: A plurality of substrate bias circuits (14, 16, and 18) are designed to provide a stable substrate reference potential for a variety of operating modes. Only one of the bias circuits is enabled by a control circuit (12) at any time for any operational mode. An on-demand boost bias circuit (16) is enabled whenever a level detector (20) indicates substrate bias has exceeded a predetermined limit during special operating modes such as burn-in or parallel test.

Abstract: A weed extractor is designed with a shaft (100) having a handle end and a distal end. A foot piece (116) has a first end and a second end. The first end is slidely attached to the shaft proximal to the distal end. The foot piece extends laterally from the shaft. A bit assembly (118) has a plurality of pivotally mounted opposed spikes. The bit assembly has an open position and a closed position, and moves between the open position and the closed position in response to movement of the foot piece with respect to the shaft. At least two opposed spikes are spaced apart from a plane bisecting an angle between the at least two opposed spikes in the open position. A part of each of the at least two opposed spikes intersects the plane in the closed position.

Abstract: A counter (450) for generating a series of binary addresses, each of the addresses including a set of one or more most-significant bits. The counter includes circuitry to generate the addresses, including the set of most-significant bits (402), in a first mode and circuitry to generate the addresses (400), excluding the set of most significant bits, in a second mode. The counter is operable to transition between the first and second modes. The counter also includes circuitry to generate the addresses in the first mode in a non-binary count order in which the set of most-significant address bits is a set of least-significant bits in the count order.

Abstract: A circuit is designed with a memory array (102) having a plurality of memory cells arranged in rows and columns (204, 206, 210, 212). The memory array has a plurality of bit line pairs (202, 208, 282, 284) with each bit line pair connected to a respective column of memory cells and a bit line reference terminal (254). A control circuit (700) produces a control signal, the control signal having a first voltage for a first time, a second voltage for a second time and a third voltage for a third time. A precharge circuit (350, 352) connects at least one bit line pair to the bit line reference terminal, responsive to the first voltage for the first time and the second voltage for the second time. The precharge circuit disconnects the at least one bit line pair from the bit line reference terminal, responsive to the third voltage for the third time.

Abstract: A synchronous random access memory is arranged to be responsive directly to a system clock signal for operating synchronously with the associated microprocessor. The synchronous random access memory is further arranged to either write-in or read out data in a synchronous burst operation or synchronous wrap operation in addition to synchronous random access operations. The synchronous random access memory device may be fabricated as a dynamic storage device or as a static storage device.

Abstract: An input protection device is presented having a depletion controlled isolation stage. In one embodiment of the invention, a depletion controlled isolation resistor is formed between adjacent N+ diffused regions by N-well diffusion. One N+ diffused region electrically contacts an input bond pad and a primary protective device. The other N+ diffused region electrically contacts a second protective device and the internal circuit it is to protect. The depletion controlled isolation resistor limits the amount of current passing through the resistor to a safe level during an over-voltage condition. In another embodiment of the invention, a depletion controlled isolation stage includes a silicon controlled rectifier (SCR) as the primary protective device in combination with the depletion controlled isolation resistor.