Abstract: A method for epitaxially growing a layer of III-V material on a wafer of a material such as silicon comprises the steps of placing the wafer (16') in a first ultra-high vacuum chamber (11), and epitaxially growing a transition layer such as germanium on the wafer. An intermediate high vacuum chamber (13) is used to transport the wafer 16' to a second ultra-high vacuum chamber (12), and the second chamber (12) is used to epitaxially grow a layer of III-V material over the transition layer. Gate valves (33 and 15) are sequentially opened and closed to that the second vacuum chamber (12) cannot be contaminated by gases or particles from the first vacuum chamber (11). Wafer transport from chamber (11) to (13) is achieved without exposure to the atmosphere or to significant pressure changes thus avoiding the waste of transfer time or the formation of native oxide on the wafer surface.

Abstract: In one embodiment (FIG. 1) leads (14) are soldered to bonding pads (11) by heating a silica heating member (17) with a laser beam (16). The heating member has a tubular shape and encloses the solder elements to be heated. In another embodiment (FIG. 3), the heating element is a plate (22) overlying elements to be soldered which plate is scanned by a laser beam (28) along a line (31) in close proximity to the elements to be soldered.

Abstract: Apparatus for automatically testing LEDs formed in a wafer (11) includes a computer (15), a test probe (21) for applying a bias to an individual LED and a sensor probe (32) for positioning the test probe with respect to a contact (57) on the LED. Light from the LED is transmitted by an optical fiber (22) to opto-electronic equipment (18) for analysis and characterization by the computer (15). LED bias is provided by a pulse generator (35) and faulty diodes are marked by a marker probe (31). Each LED contains a lens portion (60) for directing LED light to the optical fiber (22).

Abstract: An apparatus coupled to an electroless copper plating bath for analyzing controlling, on-line, the primary constituents of the bath is described. The apparatus detects and controls not only the copper concentration of the bath by optical means, but the concentrations of hydroxyl ion, formaldehyde reducing agent and cyanide ion as well.

Abstract: A method for automatically determining the refractive index profile of a lightguide preform.

Abstract: A transfer pin (40) simultaneously transfers a die (10) to an adhesively ted, electrically conductive cup (23) while depositing adhesive on the upper surface of the die for subsequent bonding.

Abstract: In an electronic device assembly comprising at least one circuit element an encapsulant therefor, wherein the encapsulant comprises a silicone resin characterized in that subsequent to the curing of said encapsulant, the resin is coated with a fine inorganic powder such as fumed or fused silica which essentially eliminates static charge and tackiness of the surface.

Abstract: A method for preventing unwanted continued polymerization with aging of a lymer, e.g., a silicone gel, which was catalytically cured comprises treating the cured polymer with a catalytic deactivating agent or stabilization of cured resin.

Abstract: A technique for condensation soldering of articles (29) in a facility (40 or 80) having a vapor chamber (42) and a pair of aligned input (102) and exit (104) throats. An article (29) to be soldered is transported sequentially through the input channel (56), the vapor chamber (42) and the output channel (58). Simultaneously, air is moved, in a controlled manner, into and through a portion of the exit channel, in a direction opposite to the movement of the article and withdrawn from the input channel. The air exiting the input channel is processed to recover the expensive vapor entrained therein.

Abstract: A predetermined small spacing or gap between a semiconductor wafer and a mask is defined by projecting a cushion of air through a central mask aperture toward the wafer. The wafer is supported on a sponge rubber member which is designed, along with the air flow paths, to maintain a uniform small separation as is desirable in the photolithographic printing of semiconductor mask patterns.

Abstract: In a semiconductor photolithographic mask alignment system, a unique bifocus element is included in the microscope for permitting simultaneous focusing on the mask and semiconductor wafer surface, even though the mask and wafer separation is greater than the microscope depth of field. The bifocus element is preferably located at the rear focal plane of the microscope objective and is designed to image, at the same location, light from the mask polarized in a first direction and light from the wafer polarized at right angles to the first direction.