Abstract: A hermetic substrate transportation container permitting storage of an electronic substrate is provided, keeping a rise of internal moisture concentration low, thus preventing generation of natural oxidation film on the surface of the electronic substrate and allowing detection of the contents inside the substrate transportation container, from outside. A container body having an aperture for loading and unloading an electronic substrate, the substrate transportation container comprising a lid for sealing such aperture, in which the container body and the lid are made of a material having an amorphous polyolefin as its main constituent. By constituting the container body and the lid using the amorphous polyolefin with low hygroscopic characteristic as a main constituent, it is possible to keep discharge of moisture from the internal wall thereof low and also to prevent an increase of moisture concentration in the sealed compartment.

Abstract: The present invention clarifies the conditions for the required element techniques to be technically superior and makes it easy to establish the development guideline during the development of a memory embedded semiconductor integrated circuit. The total resource CW of a fabrication technique is defined by utilizing the process number or mask number, etc.

Abstract: An illumination intensity correcting circuit including a curve fitting circuit formed by differential amplifier circuits and a load resistor, wherein the amplification factor of the curve fitting circuit is changed before and after each breakpoint voltage, the reference voltages of the differential amplifier circuits are set so that at least two breakpoint voltages are arranged in the range of a voltage of a video signal, and the amplification factors of the differential amplifier circuits are set so that the amplification factor of the curve fitting circuit in the range of the signal voltage inside of the two breakpoint voltages is smaller than the amplification factor outside of the two breakpoint voltages.

Abstract: In NAND type nonvolatile semiconductor memory each memory cell is made of a dual gate transistor connected at one gate portion thereof to ferroelectrics, a plurality of such memory cells are connected in series to form a memory block, and a plurality of such memory blocks are arranged to form a memory cell array and make up NAND type nonvolatile semiconductor memory. Used as each dual gate transistor is a thin film transistor which has a first gate formed on one surface of a semiconductor thin film via a first gate insulating film and a ferroelectric thin film, and a second gate electrode formed on the other surface of the semiconductor thin film via second gate insulating film in confrontation with the first gate electrode. Alternatively, ferroelectric gate type dual gate thin film transistors are made by forming thin film transistors on opposite surfaces of a ferroelectric thin film to form memory cells.

Abstract: A bi-directional communications link between a television set and a remote control unit assists a viewer in controlling the entertainment system. The television set can signal the remote control unit to confirm instruction signal received from the remote control unit. The television can also transmit electronic program guide information to the remote control unit which is displayed on a display device on the remote control unit. The television can send the remote control unit a listing of available sub-channels within a single digital channel. The listing is displayed on the remote's display device, and the viewer can then choose from among the sub-channels.

Abstract: A transmitting/receiving system and a receiving apparatus wherein a plurality of information signals having mutually different frequency bands processed through predetermined modulation are transmitted in time series from a transmitting apparatus via an electric power line. A desired information signal is selected out of the plural transmitted information signals, and the transmission quality of the selected information signal is measured. When the result representing the measured transmission quality is low, the signal being currently received is switched to the information signal having another frequency band indicating a better transmission quality.

Abstract: A hollow package includes a package body composed of an epoxy resin having a low thermal coefficient of linear expansion, wherein the package body includes a recess for receiving an electronic component, and leads, for extracting electrodes of the electronic component, extending from the inner surface of the recess, via the upper surface of the package body, to the peripheral surface, and a transparent sealing plate bonded onto the upper surface of the package body with an ultraviolet-curable resin.

Abstract: A cylindrical lens 39 for generating focussing error signals is formed as one with a portion of an optical component 33 of a transparent material lying on an optical path L2 that is an optical path of a return light beam from the optical member 33. This configuration assures a small size while reducing the production cost and improving operational reliability.

Abstract: A liquid crystal panel and a liquid crystal projection display apparatus comprising the liquid crystal panel, the liquid crystal panel comprising an insulating substrate, plural pixel electrode formed above said insulating substrate, plural thin film transistors each driving each of said pixel electrode, and a light-shielding layer formed between said thin film transistor and said insulating substrate.

Abstract: A method of forming a buried wiring comprising the steps of: (A) forming a wiring and a first insulating layer filled between the wirings on a substratum, (B) immersing the first insulating layer in a fluid which can dissolve the first insulating layer, to dissolve the first insulating layer into the fluid, (C) substituting, for the fluid, a raw material solution containing a raw material for forming a second insulating layer, without bringing the wiring into contact with a gas, and (D) filling a second insulating layer formed by gelation in the raw material solution at least between the wirings, and then, drying off the raw material solution, thereby to form the second insulating layer at least between the wirings.

Abstract: The initial value T0 of the period of a four-phase driving signal for driving a CCD of an image pickup device is calculated according to the equation T0=(L×p)/(f×v). Wherein, L represents the distance from the CCD to a product (object), if represents the focus length of the optical system used between the CCD and product, v represents the transferring speed of the product, and p represents the distance interval of photodiodes of the CCD. Afterward, the period T of the driving signal is adjusted properly depending on the pickup position of the product. Because electric charges corresponding to the same portion of the image of the product are accumulated in the same potential well formed by the driving signal by generating the driving signal as described above, the image of the product is picked up with suppressed blurring regardless of the speed of the product. Blurring is prevented during image pickup of an transferring object by the method described above.

Abstract: Providing a power supply system having a plurality of power supply apparatuses connected in parallel to each other, each of which is not affected by a voltage fluctuation of a reverse flow-preventive diode provided in an output line thereof, and can provide a stable output voltage controlled with high accuracy. Each of the power supply apparatuses includes a positive output terminal 33 connected to a load 13, a reverse flow-preventive diode 31 connected to the positive output terminal 33, a VF correcting circuit 46 for detecting a forward voltage of the reverse flow-preventive diode 31 and providing a controlling unit with the detected voltage in a feedback manner, an output current detecting/correcting circuit 45 for detecting a forward current of the reverse flow-preventive diode 31 and providing the controlling unit with the detected current in a feedback manner, and the controlling unit for controlling the anode potential of the reverse flow-preventive diode 31.

Abstract: A nitride based III-V compound semiconductor doped with a p-type impurity is formed on a substrate made from sapphire. The substrate is then placed between a pair of RF electrodes, and a radio frequency field is applied between the RF electrodes. With this operation, electrons present in the compound semiconductor attack the bonding between the p-type impurity and hydrogen, to cut the bonding. The hydrogen atoms thus dissociated are released from the compound semiconductor, to thereby activate the p-type impurity. In this case, it is not required to heat the compound semiconductor by a heater or the like.

Abstract: A defect inspection apparatus enabling more reliable and quicker detection of a defect present in the surface of a stacked film formed on a wafer and enabling reliable and quicker detection of a minute defect even if there is unevenness in the surface of the wafer, including a light source, a light frequency shifter unit for converting light from the light source to a plurality of beams of inspection light and a beam of reference light having close frequencies, an object lens upon which the beams of inspection light are incident and focusing the beams of light on the wafer to form a plurality of different focal points corresponding to the beams of inspection light, a laser scanning unit for making the beams of inspection light scan the wafer, a light detection unit and cofocal pinhole plate 13 for detecting an intensity of a superposed light of the beams of reflected light and the beam of reference light at a cofocal point, and an analyzing unit serving as a contrast waveform generating means for generating a

Abstract: Provided are a semiconductor memory device and a method of manufacturing the same, in which landing pad layers in correspondence to contacts connecting to a power supply voltage line and a bit line can be easily formed in the same layer as node wiring, thereby simplifying the manufacturing process. Resist patterns having a roughly C shape i.e., patterns of two sets of node wiring are formed not in the same direction in all memory cells but in a different direction from each other between neighboring cells in up-down and right-left directions. Furthermore, out of four sides of each memory cell resist patterns i.e., patterns of the landing pad layer are formed on the two sides opposite the two sides close to the resist patterns for the two sets of node wiring. Accordingly, the landing pad layers can be formed in the same layer as the node wiring, the landing pad layers corresponding to contacts connecting to a grounded line, power supply voltage line and bit line in the upper layer from the node wiring.

Abstract: A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.

Abstract: A technique is described for lightening a shadow of a damper line for preventing vibration of a color selecting member cast on a video screen and further preventing occurrence of the shadow. In a cathode ray tube in which electron beams emitted from neighboring electron guns cross each other before passing through a plurality of apertures of a color selecting member and has an area through which both of the electron beams pass. A damper line is provided in the area through which both of the electron beams pass. Since one of the electron beam falls on a shadow cast by the other electron beam, the shadow becomes lighter.

Abstract: An electro-optic device, such as an LCD, includes a display unit and a peripheral drive circuit unit on a single substrate. A gate comprising a gate electrode and gate insulation film is formed on a surface of the substrate. A layer of a substance having good lattice compatibility with manocrystalline silicon is formed over the gate insulation film. A layer of monocrystalline silicon is formed over the substance layer. Manocrystalline silicon is heteroepitaxially grown by catalytic CVD or the like using a crystalline sapphire film formed on the substrate to form the monocrystalline silicon layer. The monocrystalline silican layer is used as a dual gate MOSTFT of the electro-optic device.

Abstract: A field emission display having element including a first electrode, and a second electrode laminated to the first electrode through an insulating layer. The first electrode has an opening; the second electrode has a hole of a planar shape corresponding to that of the opening at a position matched with the opening; and the insulating layer has a through-hole continuous to the opening and the hole. An upper edge portion of the hole is formed into a cross-sectional shape having an edge angle in a range of 80 to 100°, and at least part of the upper edge portion of the hole is exposed in the through-hole. In this element, electrons are emitted from the second electrode through the upper edge portion of the hole exposed in the through-hole by applying a specific voltage between the first electrode and the second electrode. With this configuration, a distance between the gate electrode and a field emission portion of the cathode electrode can be accurately controlled with a simple structure.

Abstract: There is provided an ink ribbon cassette which prevents damage and pollution of a part of an ink ribbon exposed outside of a cassette case housing the ink ribbon. In the ink ribbon cassette in which the part of the ink ribbon housed in the cassette case is exposed outside of the cassette case, a detachably attached cover body for covering the part of the ink ribbon exposed outside of the cassette case is provided.