Abstract: An image readout lens comprises, successively from the object side, a first lens L1 made of a positive meniscus lens having a convex surface directed onto the object side, a second lens L2 made of a biconcave lens having a surface with a greater curvature directed onto the object side, and a third lens L3 made of a biconvex lens having a surface with a greater curvature directed onto the image side, the first lens L1 and second lens L2 each being a plastic lens with aspheric surfaces on both sides. The image readout lens satisfies the following conditional expressions (1) and (3) to (5): 0.08<D6/F<0.2  (1) 1.5<|R6|/F<2.2  (3) 0.5<R2/F<1.55   (4) 0.5<R4/F<1.2  (5) where D6 is the center thickness of the third lens, Rj (j=1 to 7) is the radius of curvature of the j-th surface from the object side, and F is the focal length of the whole lens system.

Abstract: A portable fence is practically easy and fast to be installed along the boundary of a keep-off area to restrict and entry of the unconcerned at construction or events-holding sites and is conveniently compact to carry and store due to its foldability. This fence comprises a conjunction screen formed by connecting a plurality of fence components, preferably formed of synthetic resin by blow molding, side by side through a hinge mechanism such that they are foldable to each other and a support means or stay pivotably mounted onto a lower fringe portion of said conjunction screen, and stably provides a restricted area at a site where an access of the unconcerned is restricted in an easy and fast manner and is convenient to carry and store due to its foldability. The addition of a weight container thereto further enhances the standing stability thereof.

Abstract: The dielectric ceramic composition is composed of a sintered body of ceramic particles containing Ba2Ti5O11 as a major component. The ceramic particles may contain Ag in the form of solid solution at the rate of 0.2% to 3.0% by mole. the ceramic particles may further contain Ba2TiSi2O8 so the BaTi5O11/Ba2TiSi2O8 ratio is 1.5 to 9 BaTi5O11 to 1 Ba2TiSi2O8. The dielectric ceramic composition can be sintered at a low enough temperature to enable a highly conductive metal such as Ag, Cu or the like to be burned and sintered integrally.

Abstract: A pair of eyeglasses as provided with a mechanism on the nose bridge making it possible to turn one of the glasses around. A side piece attached thereto turns over together with one of the glasses, with the result that both of the eyepieces will be displaced over the glasses on both sides so as to protect the glasses from impact and the like when folded. Located within the bridge nose main body is a screw surrounded by a spring. At each end of the screw there are washers which provide for ease of movement between the spring and the screw. The spring is under compression at all times. Still further, the screw is tightly thread fitted into the connecting portion of the bridge so as to prevent loosening.

Abstract: The process for preparing ceramic powder having a core-shell structure by dissolving a crystalline ceramic powder In water so as to leave a core portion of the ceramic powder while heating; depositing a component of the ceramic powder dissolved in the water on and around surfaces of the core portion thereof as a deposited material from the water by gradually cooling the ceramic powder and the water obtained in the step of dissolving; and firing a mixture of the ceramic powder obtained in the step of depositing with an additive at a high temperature to subject the deposited material and the additive to solid phase reaction to form a shell portion on and around the core portion of the ceramic powder. The process can produce the ceramic powder having a core-shell structure from a crystalline ceramic powder, thereby achieving high electrical and mechanical features when formed into ceramic electronic parts.

Abstract: The present invention is an electronic endoscope apparatus that can appropriately compensate for the lack of light quantity caused by a delayed response from a shielding mechanism in using the all-pixel reading system to form a high-quality image. In this apparatus, for a moving image, a pixel mix signal is read out from a CCD to reproduce motions faithfully. For a still image, to improve the image quality, a shielding period set by the shielding plate is used to read out all the pixels obtained by the CCD during a single exposure in order to form a pixel mix signal using a mixing circuit. A lamp characteristic memory stores table data indicating the characteristic between the lamp voltage of the current lamp and the quantity of outgoing light so that based on this data, a lamp voltage higher than in moving images is supplied to the lamp during the exposure for still-image formation.

Abstract: The invention provides a method for forming a thin film uniform in resistivity distribution on a semiconductor substrate. The temperature of the inside wall (6) of the reaction vessel (2) of vapor phase growth equipment is controlled to below the thermal decomposition temperature of a dopant gas such as diborane, for example, to within a range of room temperature to 250° C. The region of this temperature range is defined so as to range from the upstream-side end of the semiconductor substrate (1) to at least an upstream-side {fraction (1/3 )} point of the substrate diameter along the direction of flow of the dopant gas supplied from one end of the reaction vessel (2), desirably, over the entire region just above the semiconductor substrate (1).

Abstract: An object of the present invention is to provide a powder and an external preparation for skin using the same which has good spreadability and does not spoil fatty acid-solidity ability of zinc oxide. A zinc oxide-coated material characterized as coating an amorphous state of zinc oxide on a substrate.

Abstract: A first layer having a same conductivity and a substantially identical concentration as a CZ substrate having a high impurity concentration is formed by a vapor phase growth process on the substrate directly, a pressure is changed to purge an atmosphere, and then a second layer having a same conductivity as the substrate and having a lower concentration by 3 or more orders of magnitude than the substrate is formed by the vapor phase growth process. Thereby there is simply and inexpensively formed a silicon single crystal thin film by the vapor phase growth process which film has no crystal defective layer and has a dopant concentration abruptly changing at an interface between the film and a high concentration layer.

Abstract: A spray apparatus includes a pump for pressurizing water, a drive unit for driving the pump, a flow regulator for regulating the flow of water pressurized by the pump, and a modular spray assembly. The modular spray assembly includes piping connected to the pump, a plurality of quick coupler units connected to the piping, and water outlets connected to the quick coupler units through which the pressurized water is sprayed, wherein the pressurized sprayed water creates a mist and a wind. The spray apparatus can be assembled in a tent-like structure to provide a rain room, wherein a mist and a wind are generated by the apparatus.

Abstract: By perfectly preventing a particle from being attached on a silicon wafer or a silicon epitaxial wafer before and after the silicon epitaxial growth, pit formation on the silicon epitaxial layer in RCA cleaning is prevented from occurring. A pretreatment chamber, a vapor phase growth chamber and an aftertreatment chamber are mutually connected by a transport path whose interior is clean while being isolated from the outside environment. In the pretreatment chamber, megasonic cleaning using O3 added water is conducted (step S2); in the vapor growth chamber, removal of a chemical silicon oxide film C by pre-bake (step S4) and formation of a high quality silicon epitaxial layer E are conducted (step S5); and in the aftertreatment chamber, passivation of the silicon epitaxial layer E is conducted by O3 water cleaning or SC1 cleaning (step S7).

Abstract: A yarn unwinding tension stabilizer capable of stably unwinding a yarn from various types of yarn suppliers in such shapes as cheese and cone so as to effectively cope with such drawbacks as slide of wound layers on a yarn supplier and slippage of yarn loops therefrom due to the ballooning of an unwound yarn and so forth and a yarn unwinding tension stabilizing apparatus for a warping creel capable of simultaneously setting said stabilizers on the multiple number of the suppliers suspended on the warping creel in an easy operation. The tension stabilizer (3) is arranged by disposing the plurality of elastic wiring materials (2) on the opening (10) of the supporting member (1) in such a manner that said materials convavely curve towards the center of said opening and overlap one another. The frame, in which the plurality of said stabilizers are aligned in rows, is arranged such that it is horizontally movable as a whole.

Abstract: The present invention is an electronic-endoscope light quantity controlling apparatus that can reduce costs by simplifying a configuration for setting a shielding period in executing an all-pixel reading system. This apparatus uses diaphragm controlling circuit to control a diaphragm so as to maintain the brightness of an image at a predetermined value. It completely closes the diaphragm to set the shielding period and uses this period to form a still image based on the all-pixel reading method. For a moving image, it forms an image signal using a pixel mix reading system at the output of an image pickup device. That is, for a still image, during the shielding period set by the diaphragm, odd-line signals are read out from all pixels obtained by a CCD during a single exposure within a {fraction (1/60)}-second period, and during the next period, even-line signals are read out from these pixels. Subsequently, a mixing circuit pixel-mixes these line signals into a field signal to form a high-quality still image.

Abstract: An electronic endoscope system that provides, even when it uses a halogen lamp, an image having a brightness equal to that of an image obtained with a xenon lamp. The electronic endoscope system leads rays emitted from a halogen lamp to the tip of an electronic endoscope through a light guide, picks up an internal image of an object to be observed with a CCD through an objective optical system and reads out twice each of an odd field signal and an even field signal successively when a slow scan mode is selected. The odd or even field signal from each field is delayed by a delay memory in a luminance enhancement circuit, and the same field signals are added by an adder. The electronic endoscope system performs image processing of an addition signal thus obtained as a single odd or even field signal, thereby being capable of enhancing the luminance signal, for example, to a level twice as high.

Abstract: A detection system is provided. In one embodiment a silicon Compton recoil electron detector uses the Compton double scatter technique with recoil electron tracking to detect medium energy gamma rays from 0.05 to 10 MeV. Two detector layers are required; a silicon microstrip hodoscope and a calorimeter. The incoming photon Compton scatters in the hodoscope. The calorimeter is placed at a location with respect to the hodoscope wherein the calorimeter is effectively shielded from incident emitted x-rays. The second scatter layer is the calorimeter where the scattered gamma ray is totally absorbed. The recoil electron in the hodoscope is tracked through several detector planes until it stops. The x and y position signals from the first two planes of the electron track determine the direction of the recoil electron while the energy loss from all planes determines the energy of the recoil electron.

Abstract: For securing necessary brightness and back focus and favorably correcting off-axis aberrations while in a simple lens configuration, a collimator lens comprises, successively from the parallel luminous flux side, a first lens L1 made of a negative meniscus lens having a convex surface directed onto the light source side, and a second lens L2 made of a biconvex lens having a surface with a greater curvature directed onto the parallel luminous flux side. The surface of the second lens L2 on the parallel luminous flux side is formed as an aspheric surface. The collimator lens satisfies the following conditional expression (1): −0.87<R1/ƒ<−0.38  (1) where R1 is the paraxial radius of curvature of the surface of the first lens L1 on the parallel luminous flux side; and f is the focal length of the whole lens system.

Abstract: An object of the invention is to remove organic materials and metal impurities on a silicon-based semiconductor substrate while preventing regrowth of a natural oxide film and thermal diffusion of the metal impurities from occurring. In order to achieve the object, H2 gas that can maintain a reductive atmosphere is consistently used, as a carrier gas, through a whole process, the organic materials in attachment is decomposed by HF gas and the metal impurities are transformed into metal chlorides by HCl gas. In any of treatments, since products whose vapor pressures are higher than those of respective starting materials are obtained, the products are respectively vaporized in a H2 gas atmosphere at higher temperatures than those at which the decomposition and the transformation are performed. The whole process can be performed in a low temperature range whose upper limit is 1000° C. or lower.

Abstract: A modified Gaussian lens comprises, successively from the object side, meniscus first and second lenses L1 and L2 each having a positive refracting power with a convex surface directed onto the object side, a meniscus third lens L3 having a negative refracting power with a concave surface directed onto the image side, a meniscus fourth lens L4 having a negative refracting power with a concave surface directed onto the object side, and a fifth lens L5 made of a biconvex lens; and satisfies the following conditional expressions (1) to (6): (1) 0.37<f1,2/f<0.57, (2) 0.62<&Sgr;d/f<1.03, (3) 0.13<L/f<0.26, (4) 22.0<&ngr;2−&ngr;3<36.0, (5) 6.0<(1/R6+1/|R7|)×f<11.2, (6) −1.72<R10/R1121 0. Thus, while in a compact, five-group, five-element configuration, high performances and conditions suitable for a relatively telephoto lens mounted to a monitor camera or the like, i.e., an F number of about 1.

Abstract: An imaging lens comprises a front group constituted by a first lens L1 made of a negative meniscus lens having a convex surface directed onto the object side, the object-side surface thereof being made aspheric, and a second lens L2 made of a biconvex lens having a surface with a larger curvature directed onto the object side; and a rear group constituted by a third lens L3 made of a biconcave lens and two biconvex lenses L4, L5. Letting d be the distance from the object-side surface of the first lens L1 to the image-side surface of the second lens L2, f be the focal length of the whole lens system, and nA and &ngr;A be average values of refractive index and Abbe number, respectively, in the two biconvex lenses L4, L5, the imaging lens satisfies 1.0<d/f<2.0, nA>1.76, and &ngr;A>45.0.