Abstract: The present invention is directed to high coordination sphere Group 2 metal ?-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.

Abstract: Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films. The classes of compounds are generally represented by the formulas: and mixtures thereof, wherein R and R1 in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1 in formula A also being combinable into a cyclic group, and R2 representing a single bond, (CH2)n, a ring, or SiH2.

Abstract: Non-fluorinated copper precursors and methods for making and using same are described herein. In certain embodiments, the copper precursors described herein may be used as precursors to deposit copper films and alloys thereof on a substrate through, for example, atomic layer deposition or chemical vapor deposition conditions.

Abstract: The present invention relates to a method used to remove post etch organic and inorganic residue as well polymeric residues and contaminants from semiconductor substrates. In one aspect, the method involves contacting the substrate with a composition are comprised of a water soluble organic solvent, a sulfonic acid and water.

Abstract: Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Abstract: A composition and associated method for chemical mechanical planarization of a metal-containing substrate afford low dishing levels in the polished substrate while simultaneously affording high metal removal rates. Suitable metal-containing substrates include tungsten- and copper-containing substrates. Components in the composition include a silatrane compound, an abrasive, and, optionally, a strong oxidizing agent, such as a per-compound.

Abstract: Described herein is an apparatus and method for providing an inerting gas during the application of soldering to a work piece. In one aspect, there is provided an apparatus that is placed atop of a solder reservoir and comprises a plurality of porous tubes that are in fluid communication with an inerting gas. In another aspect, there is provided a method for providing an inerting gas to a wave soldering apparatus comprising the steps of, among other things, placing an apparatus atop at least one edge of the solder reservoir wherein the apparatus comprises a plurality of tubes comprising one or more openings in fluid communication with an inerting gas source. In a further aspect, at least one of the tubes comprises a non-stick coating or is comprised of a porous non-stick material such as a sleeve.

Abstract: The method described herein provides a method for preparing a chlorinated silane at least one end product comprising SiH3Cl, SiH2Cl2, and combinations thereof in molar yields of 50% or greater with respect to silane in the feed stream. The method described herein therefore provides an end product comprising the one or more chlorinated silanes by contacting reaction mixture comprising silane and hydrogen chloride with a catalyst at a temperature and time sufficient to provide the end product.

Abstract: A mixture and method for the storage and delivery of a gas are disclosed herein. In one aspect, there is provided a mixture comprising: an ionic liquid comprising an anion and a cation, at least a portion of the gas that is disposed within and reversibly chemically reacted with the ionic liquid, and optionally an unreacted gas. In another aspect, there is provided a method for delivering a gas from a mixture comprising an ionic liquid and one or more gases comprising: reacting at least a portion of the gas with the ionic liquid to provide the mixture comprising a chemically reacted gas and an ionic liquid and separating the chemically reacted gas from the mixture wherein the chemically reacted gas after the separating step has substantially the same chemical identity as the chemically reacted gas prior to the reacting step.

Abstract: Described herein is a method and liquid-based precursor composition for depositing a multicomponent film. In one embodiment, the method and compositions described herein are used to deposit Germanium Tellurium (GeTe), Antimony Tellurium (SbTe), Antimony Germanium (SbGe), Germanium Antimony Tellurium (GST), Indium Antimony Tellurium (IST), Silver Indium Antimony Tellurium (AIST), Cadmium Telluride (CdTe), Cadmium Selenide (CdSe), Zinc Telluride (ZnTe), Zinc Selenide (ZnSe), Copper indium gallium selenide (CIGS) films or other tellurium and selenium based metal compounds for phase change memory and photovoltaic devices.

Abstract: The present invention is a container having a diptube inlet, at least one baffle disc positioned between the outlet of the diptube and the outlet of the container to provide a narrow annular space between the baffle disc and the sidewall of the container to prevent liquid droplets from entering the outlet to the container and the inner surface of the container sidewall and an annular, radially inward projecting deflector ledge on the sidewall, proximate the baffle disc. The present invention is also a process of delivering a chemical precursor from a container having the above structure. Liquid and vapor delivery are both contemplated.

Abstract: A chemical vapor deposition process for preparing a low dielectric constant organosilicate (OSG) having enhanced mechanical properties by adjusting the amount of organic groups, such as methyl groups, within the mixture is disclosed herein. In one embodiment of the present invention, the OSG film is deposited from a mixture comprising a first silicon-containing precursor that comprises from 3 to 4 Si—O bonds per Si atom, from 0 to 1 of bonds selected from the group consisting of Si—H, Si—Br, and Si—Cl bonds per Si atom and no Si—C bonds and a second silicon-containing precursor that comprises at least one Si—C bond per Si atom. In another embodiment of the present invention, the OSG film is deposited from a mixture comprising an asymmetric silicon-containing precursor. In either embodiment, the mixture may further contain a porogen precursor to provide a porous OSG film.

Abstract: A system and a process for providing acetylene, preferably at a high purity level (e.g., comprising 100 parts per million (“ppm”), or 10 ppm, or 1 ppm, or 100 parts per billion (“ppb”), or 10 ppb, or 1 ppb or less of solvent), to a point of use, such as a semiconductor manufacturing process, is described herein. In one aspect, there is provided a process for providing a process for providing a high purity acetylene comprising 100 ppm or less solvent to a point of use comprising: providing an acetylene feed stream comprising acetylene and solvent at a temperature ranging from 20° C. to ?50° C.; and introducing the acetylene feed stream to a purifier at a temperature ranging from ?50° C. to 30° C. to remove at least a portion of the solvent contained therein and provide the high purity acetylene.

Abstract: Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n??(I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

Abstract: The present invention relates to a method for removing metal oxides from a substrate surface. In one particular embodiment, the method comprises: providing a substrate, a first, and a second electrode that reside within a target area; passing a gas mixture comprising a reducing gas through the target area; supplying an amount of energy to the first and/or the second electrode to generate electrons within the target area wherein at least a portion of the electrons attach to a portion of the reducing gas and form a negatively charged reducing gas; and contacting the substrate with the negatively charged reducing gas to reduce the metal oxides on the surface of the substrate.

Abstract: A composition comprising one or more water soluble organic solvents comprising a glycol ether; water; a fluoride containing compound provided that if the fluoride containing compound is ammonium fluoride than no additional fluoride containing compound is added to the composition; optionally a quaternary ammonium compound; and optionally a corrosion inhibitor is disclosed herein that is capable of removing residues from an article such as photoresist and/or etching residue. Also disclosed herein is a method for removing residues from an article using the composition disclosed herein.

Abstract: Mixed polycycloaliphatic amines (MPCA) and alkylates thereof (MPCA alkylates), methods for making mixed polycycloaliphatic MPCA amines and MPCA alkylates thereof, as well as polymeric compositions, such as spray-applied polyurea coating compositions, comprising said mixed amines MPCA and MPCA alkylates thereof are described herein. In one embodiment, the polymeric composition comprises an isocyanate component, and a resin component comprising an organic compound having the following Formula I: where R1, R2 and R3 are each independently selected from a hydrogen atom, an alkyl group comprising from 1 to 20 carbon atoms, an aryl group comprising from 3 to 12 carbon atoms, an aralkyl group comprising from 3 to 12 carbon atoms and combinations thereof, provided that there is at least one alkyl group within Formula I, and X is a methylene bridged polycycloaliphatic amine (MPCA).

Abstract: Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least one additive useful for performing immersion lithography at an operating wavelength ranging from 140 nm to 365 nm are disclosed herein.

Abstract: A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the metal film on at least a portion of the surface via deposition by using a organometallic precursor. In certain embodiments, the diffusion barrier layer may be exposed to an adhesion promoting agent prior to or during at least a portion of the forming step. Suitable adhesion promoting agents include nitrogen, nitrogen-containing compounds, carbon-containing compounds, carbon and nitrogen containing compounds, silicon-containing compounds, silicon and carbon containing compounds, silicon, carbon, and nitrogen containing compounds, or mixtures thereof. The process of the present invention provides substrates having enhanced adhesion between the diffusion barrier layer and the metal film.

Abstract: The present invention provides a method and apparatus for the dry fluxing of at least one component and/or solder surface via electron attachment. In one embodiment, there is provided a method for removing oxides from the surface of a component comprising: providing a component on a substrate wherein the substrate is grounded or has a positive electrical potential to form a target assembly; passing a gas mixture comprising a reducing gas through an ion generator comprising a first and a second electrode; supplying an amount of voltage to at least one of the first and second electrodes sufficient to generate electrons wherein the electrons attach to at least a portion of the reducing gas and form a negatively charged reducing gas; and contacting the target assembly with the negatively charged reducing gas to reduce the oxides on the component.