Abstract: A CVT has a torque convener (T/C) speed ratio calculation section that determines the speed ratio from the engine speed and the primary pulley speed. The calculation section then calculates the torque ratio from the speed ratio. An input torque estimation section then estimates the input torque input into CVT from the torque ratio and the determined engine output torque. The T/C speed ratio calculation section, having a correction amount calculation section, reduces the speed ratio when the accelerator pedal is depressed to less than Np/Ne. Because the disparity with real value of the speed ratio occurring in the dead time of the respective revolution sensors can be decreased and the input torque properly estimated, slippage between the V belt and the variable pulley is prevented.

Abstract: A method of manufacture reduces costs and provides an excellent mass-productivity, a super-junction semiconductor device, that facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteristics of the alternating conductivity type layer from being impaired. A surface MOSFET structure, including p-type base regions, p+-type contact region in p-type base region, an n+-type source region in p-type base region, a gate electrode layer and a source electrode, is formed in the surface portion of an n-type semiconductor substrate through the usual double diffusion MOSFET manufacturing process. An oxide film is deposited by the CVD method on the back surface of the semiconductor substrate, a resist mask for defining p-type partition regions is formed on the oxide film, oxide film is removed by ion etching, and trenches are dug.

Abstract: There is provided an impact absorption device that comprises an impact bar 24 extending in the longitudinal direction of a vehicle door 20 and a hollow impact absorption member 30 with an upper end rib 32 locked on the impact bar 24 and a lower end rib 34 locked on an internal wall of a door inner panel 22 via a long bracket 35. A fragile portion 36 is formed in the upper end rib 32, and an end 41 of the impact absorption member 40 provided on a door trim 23 is positioned opposite to the impact absorption member 30 with a gap 42 formed there between.

Abstract: A second shift valve for a lock-up clutch is switched in response to supply of an R range pressure and a solenoid pressure from a low-and-reverse solenoid valve to selectively supply an output from a lock-up solenoid valve to a pressure reduction control valve or a lock-up control valve. The pressure reduction control valve regulates a line pressure at a small gain by the output from the lockup solenoid valve via the second shift valve. The first shift valve actuated by the solenoid pressure from the low-and-reverse solenoid valve selectively supplies a high R range pressure from a manual valve or an output from the pressure reduction control valve to the low-and-reverse brake. This enables accurate hydraulic control of the low-and-reverse brake and ensures the required torque capacity with simple arrangement.

Abstract: A safety helmet has a shell, which can be a full face or open face type for encasing at least a portion of the user's head, a face shield mounted to the shell, and a sun visor mounted to an upper portion of the face shield. The face shield can be retractably or rotatably displaceable. The sun visor has a center section, a first wing section extending from a first side of the center section, and a second wing section extending from a second side of the center section that is opposite to the first side of the center section. The first wing section has a first mounting device mounting the sun visor to a first upper side of the face shield, and the second wing section has a second mounting device mounting the sun visor to a second upper side of the face shield that is opposite to the first upper side of the face shield. The sun visor can be fixedly or detachably mounted to the face shield or formed as an integral part of the face shield.

Abstract: An automatic transmission has a gear transmission mechanism with engaging devices. Up-shifting is achieved with oil pressure, which is controlled with an open control component, a gradient of which is determined based on input torque, and a feedback control component, which is based on a target gear ratio. To prevent shock during an up-shift caused by releasing the accelerator, the feedback control component is set to zero when the amount of change in the throttle opening is equal to or greater than a predetermined threshold value. As a result of inhibiting increase in feedback to make up for a tendency for oil pressure depending on an open control component to decrease as a result of the throttle opening reducing and input torque falling, increase of the oil pressure command value becomes smooth. Peaks of the output torque are therefore suppressed.

Abstract: In a method of manufacturing a substrate having a transparent conductive film in which sputtering is carried out on a transparent insulating substrate using an indium oxide/tin oxide target under an atmosphere of a mixed gas containing argon and oxygen, when the ratio of oxygen to argon in the mixed gas is in a suitable range of 0.016 to 0.018, the carrier density of the transparent conductive film becomes a maximum, while the mobility rises progressively as the ratio of oxygen to argon increases. The surface resistance of the transparent conductive film, that is the reciprocal of the product of the carrier density and the mobility, 1/(carrier density×mobility), takes a minimum value when the ratio of oxygen to argon is in the above suitable range. In this case, crystallization of the film is promoted and the percentage change between the surface resistance of the film before heat treatment and the surface resistance of the film after heat treatment can be kept down to within ±10%.

Abstract: A magnetic recording medium that does not develop film swelling when exposed to severe conditions has a nonmagnetic substrate having a trench formed in the area within 2 mm from and concentrically with the outer circumference or the inner circumference of the nonmagnetic substrate, or formed outside the data area concentrically with the outer circumference or the inner circumference of the nonmagnetic substrate.

Abstract: A console box structure includes a box body comprising a pair of side walls, a rear wall connecting the pair of side walls to each other, and a bottom part, such that an opening is formed at a front of the box body and an opening is formed at a top of the box body, and a cover member capable of opening and closing the opening formed at the top of the box body. The console box structure is makes it less difficult to open and close a cover member and provides improved versatility.

Abstract: Discharge lamp includes a synthetic quartz glass tube having an inside diameter of 8 mm or over and a pair of filaments provided within and at opposite ends of the glass tube with an L (cm) filament-to-filament distance, and rare gas and metal including at least mercury are sealed in the interior of the glass tube. Lamp voltage V (V) and lamp current I (A) during illumination of the discharge lamp, filament-to-filament distance L (cm) and inside diameter D (cm) of the glass tube have relationship represented by the following mathematical expression. Namely, (V−Vf)/L=X/({square root over ( )}D·{square root over ( )}I) and 2.6≦X≦4.2, where Vf is a constant factor depending solely on a illuminating power source and where that if the discharge lamp is illuminated by a high-frequency power source of 1 kHz or over, Vf is 10, but if the discharge lamp is illuminated by a power source of 1 kHz or below, Vf is 50.

Abstract: In a hermetic motor-driven compressor, a first gas passage is formed by a space between a linear section in a motor stator and a hermetic container, and a second gas passage in parallel with the first gas passage is formed by through holes in the motor stator. The through holes constituting the second gas passage are disposed outside of a circle inscribed in the linear section in the stator. The through hole is shaped like a bow, and an arch shape of the outer periphery thereof has a curvature larger than that of the outer circumference of the stator.

Abstract: A CMOS device with an integral reverse connection protection circuit having a low impedance region, whose impedance becomes lowest when a Vcc pad to which is to be supplied power supply voltage and a GND pad to which is to be supplied ground potential are connected in reverse polarity. The low impedance region, Vcc pad and GND pad are electrically connected through a metal line and a metal line, and current is diverted into the low impedance region during the reverse connection so as to protect an internal circuit. Surge protection elements with identical characteristics are disposed in proximity to three sides or four sides of a pad, and each side of the pad and the surge protection element corresponding thereto are electrically connected to each other, so that surge current applied to the pad is dispersed to the plurality of surge protection elements to protect the internal circuit.

Abstract: This invention achieves a high inverse voltage of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. An n− high resistance region is formed at the periphery of a drift layer composed of a parallel pn layer of n drift regions and p partition regions. The impurity density ND of the n− high resistance region is 5.62×1017×VDSS−1.36(cm−3) or less. VDSS denotes the withstand voltage (V). An n low resistance region is arranged adjacent to the n− high resistance region.

Abstract: A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the current capacity thereof. The super-junction semiconductor device includes a semiconductor chip having a first major surface and a second major surface facing in opposite to the first major surface; a layer with low electrical resistance on the side of the second major surface; a first alternating conductivity type layer on low resistance layer, and a second alternating conductivity type layer on the first alternating conductivity type layer. The first alternating conductivity type layer including regions of a first conductivity type and regions of a second conductivity type arranged alternately with each other.

Abstract: In manufacturing a double-layered or a multi-layered printed wiring board, a layer of metamorphic substance, which is created by transmuting a substrate material, is formed on an inner wall of a hole during a perforation process of the substrate utilizing radiation energy. The layer of metamorphic substance prevents conductive materials constituting electrical connection means formed on the inner wall of the hole from dispersing over a surface of the substrate or permeating into the substrate.

Abstract: A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift region on drain layer, drain drift region including a first alternating conductivity type layer; a breakdown withstanding region (the peripheral region of the semiconductor chip) on drain layer and around drain drift region, breakdown withstanding region providing substantially no current path in the ON-state of the MOSFET, breakdown withstanding region being depleted in the OFF-state of the MOSFET, breakdown withstanding region including a second alternating conductivity type layer, and an under region below a gate pad, and the under region including a third alternating conductivity type layer.

Abstract: A sheet processing apparatus is provided, which is capable of achieving high quality processing and maintaining high productivity without giving rise to problems such as sheet jam or damage of sheets even when various sheets having different attributes are conveyed. A buffer roller 505 is inhibited from carrying out a sheet staying operation in accordance with the type of sheets conveyed from an upstream side of the apparatus, to be conveyed to a downstream side of the apparatus via the buffer roller 505.

Abstract: A semiconductor device has an alternating conductivity type layer that improves the tradeoff relation between the ON-resistance and the breakdown voltage and a method of manufacturing such a semiconductor device. The alternating conductivity type layer is formed of n-type drift regions and p-type partition regions alternately arranged with each other. At least the n-type drift regions or p-type partition regions are formed by ion implantation under an acceleration voltage changed continuously. The p-type partition regions or n-type drift regions are formed by epitaxial growth or by diffusing impurities from the surface of a substrate or a layer for the layer.

Abstract: A fluid-filled vibration-damping device including an elastic body elastically connecting a first and a second mounting member to fluid-tightly close one open-end of the second mounting member, and mutually assembled a movable rubber plate bonded to a first support member and a flexible rubber layer bonded to a second support member are fluid-tightly fixed to the other open-end of the second mounting member by caulking such that the movable rubber plate cooperate with the elastic body to form a primary fluid chamber and the movable rubber plate and the flexible rubber layer cooperate to form an auxiliary fluid chamber, which are filled with a non-compressible fluid and connected together through an orifice passage.

Abstract: Disclosed is a cylindrical elastic mount including an inner sleeve member having an outward flange portion at one and an outer sleeve member disposed around the inner sleeve member with a radial spacing therebetween. The outer sleeve member has an outward flange portion at one end on the side of the flange portion of the inner sleeve member so that the flange portions of the inner and outer sleeve members are opposed to each other with an axial spacing between respective opposite surfaces of the flange portions. An elastic body disposed in the radial spacing between the inner and outer sleeves and the axial spacing between the flange portions for elastically connecting the inner and outer sleeve member.