Patents Represented by Attorney, Agent or Law Firm Saliwanchik, Lloyd & Saliwanchik
  • Patent number: 8211015
    Abstract: The present invention relates to systems and methods for providing a short-acting analgesic agent in the management of pain during labor, wherein the system enables efficient, real-time prediction of contractions for the coordinated administration of analgesia such that the peak effectiveness of the analgesic coincides with the intermittent pain of labor.
    Type: Grant
    Filed: January 7, 2011
    Date of Patent: July 3, 2012
    Assignees: University of Florida Research Foundation, Inc., Convergent Engineering, Inc.
    Inventors: Tammy Y. Euliano, Neil Russell Euliano, II, Jose C. Principe, Dorothee Marossero
  • Patent number: 8122883
    Abstract: Embodiments of the present invention described and shown in the specification and drawings include a system and method for monitoring the ventilation support provided by a ventilator and automatically supplying a breathing gas to a patient via a breathing circuit that is in fluid communication with the lungs of the patient.
    Type: Grant
    Filed: January 17, 2006
    Date of Patent: February 28, 2012
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Michael J. Banner, Paul B. Blanch, Neil R. Euliano, Jose C. Principe
  • Patent number: 8048680
    Abstract: A sensor for the detection of an analyte comprising a cis-diol moiety, which comprises a holographic element comprising a medium and a hologram disposed throughout the volume of the medium, wherein an optical characteristic of the element changes as a result of a variation of a physical property occurring throughout the volume of the medium, and wherein the medium is a polymer comprising a group of formula (I): wherein n is 0, 1, 2, 3 or 4; each X (if present) is independently is an atom or group which, via an electronic effect, promotes formation of a tetrahedral geometry about the boron atom; and Y is a spacer which, when n is 0 or otherwise optionally, is an atom or group which, via an electronic effect, promotes formation of a tetrahedral geometry about the boron atom. Such a sensor may be used for the detection of glucose.
    Type: Grant
    Filed: February 13, 2004
    Date of Patent: November 1, 2011
    Assignees: Smart Holograms Limited, Cambridge Enterprise Ltd.
    Inventors: Christopher Robin Lowe, Jeffrey Blyth, Satyamoorthy Kabilan, Abid Hussain, Xiaoping Yang, Felicity Kate Sartain, Mei-Ching Lee
  • Patent number: 7959617
    Abstract: The subject invention provides novel, inexpensive, and highly effective methods and devices for convenient and effective wound irrigation. In one embodiment the subject invention provides a discharge means for a reservoir housing containing irrigation solution wherein the discharge means has one or more specifically designed nozzles through which a sufficient volume of the irrigation solution can pass at an appropriate pressure.
    Type: Grant
    Filed: October 26, 2009
    Date of Patent: June 14, 2011
    Assignee: Innovation Technologies, Inc.
    Inventor: Paul J. Rucinski
  • Patent number: 7960510
    Abstract: The subject invention provides new fluorescent and/or colored proteins, and polynucleotide sequences that encode these proteins. The subject invention further provides materials and methods useful for expressing these detectable proteins in biological systems.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: June 14, 2011
    Assignees: University of Florida Research Foundation, Inc., University of Sydney
    Inventors: Mikhail Vladimirovitch Matz, Naila Omar Khayyam Alieva, Karen Ann Konzen, Steven Field, Anya Salih
  • Patent number: 7927613
    Abstract: A pharmaceutical composition comprising a co-crystal of an API and a co-crystal former; wherein the API has at least one functional group selected from ether, thioether, alcohol, thiol, aldehyde, ketone, thioketone, nitrate ester, phosphate ester, thiophosphate ester, ester, thioester, sulfate ester, carboxylic acid, phosphonic acid, phosphinic acid, sulfonic acid, amide, primary amine, secondary amine, ammonia, tertiary amine, sp2 amine, thiocyanate, cyanamide, oxime, nitrile diazo, organohalide, nitro, s-heterocyclic ring, thiophene, n-heterocyclic ring, pyrrole, o-heterocyclic ring, furan, epoxide, peroxide, hydroxamic acid, imidazole, pyridine and the co-crystal former has at least one functional group selected from amine, amide, pyridine, imidazole, indole, pyrrolidine, carbonyl, carboxyl, hydroxyl, phenol, sulfone, sulfonyl, mercapto and methyl thio, such that the API and co-crystal former are capable of co-crystallizing from a solution phase under crystallization conditions.
    Type: Grant
    Filed: September 11, 2003
    Date of Patent: April 19, 2011
    Assignees: University of South Florida, The Regents of the University of Michigan, Transform Pharmaceuticals, Inc.
    Inventors: Örn Almarsson, Magali Bourghol Hickey, Matthew L. Peterson, Michael J. Zaworotko, Brian Moulton, Nair Rodriguez-Hornedo
  • Patent number: 7902561
    Abstract: The present invention relates to a nitride semiconductor light emitting device including: a first nitride semiconductor layer having a super lattice structure of AlGaN/n-GaN or AlGaN/GaN/n-GaN; an active layer formed on the first nitride semiconductor layer to emit light; a second nitride semiconductor layer formed on the active layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. According to the present invention, the crystallinity of the active layer is enhanced, and optical power and reliability are also enhanced.
    Type: Grant
    Filed: December 5, 2005
    Date of Patent: March 8, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Suk Hun Lee
  • Patent number: 7893207
    Abstract: The subject invention provides new fluorescent and/or colored proteins, and polynucleotide sequences that encode these proteins. The subject invention further provides materials and methods useful for expressing these detectable proteins in biological systems.
    Type: Grant
    Filed: April 8, 2009
    Date of Patent: February 22, 2011
    Assignees: University of Florida Research Foundation, Inc., University of Sydney
    Inventors: Mikhail Vladimirovitch Matz, Ilya Vladimirovitch Kelmanson, Ella A. Meleshkevitch, Anya Salih
  • Patent number: 7892553
    Abstract: The present invention pertains to nanoparticles, comprising a metal and/or polymer core, with 7-alpha hydroxylase, or an enzymatically active fragment thereof, nicotinamide adenine dinucleotide (NADH) and antibodies, or antibody fragments, specific for low density lipoprotein (LDL), attached to the core. The invention also concerns methods for reducing LDL cholesterol in a human or animal subject by administering nanoparticles of the invention. In a preferred embodiment, both circulating LDL and plasma cholesterol levels are reduced in the subject.
    Type: Grant
    Filed: April 30, 2007
    Date of Patent: February 22, 2011
    Assignee: University of South Florida
    Inventors: Shyam S. Mohapatra, Arun Kumar
  • Patent number: 7883913
    Abstract: A manufacturing method of an image sensor of vertical type is provided that includes: forming an insulation layer with a metal wiring and a contact plug therein on a first substrate; bonding a second substrate having an image sensing unit over the insulation layer; forming a trench in the second substrate to divide the image sensing unit for each pixel; forming a PTI by gap-filling the trench with insulating material; forming a first material layer over the PTI, the image sensing unit, and the insulation layer; and forming a second material layer over the first material layer and performing a deuterium annealing process thereon. The crystal defects of the substrate generated when performing the trench etching on the donor substrate to define unit pixels are cured by performing the deuterium annealing process, making it possible to improve the sensitivity and illumination characteristics of the image sensor of vertical type.
    Type: Grant
    Filed: December 15, 2009
    Date of Patent: February 8, 2011
    Assignee: Dongbu HiTek Co., Ltd.
    Inventor: Jong Man Kim
  • Patent number: 7885023
    Abstract: Disclosed is a lens driving apparatus. The lens driving apparatus comprises a base, a yoke coupled to the base, having an upper surface formed with a hole, a closed side surface, and an opened bottom surface, a bobbin movably installed in an inner portion of the yoke, a lens module coupled to the bobbin to go in and out the hole according to movement of the bobbin, a magnet fixed to an inner portion of the yoke, a coil fixed to an outer portion of the bobbin while facing the magnets, and springs coupled to the bobbin to provide restoration force to the bobbin.
    Type: Grant
    Filed: November 22, 2007
    Date of Patent: February 8, 2011
    Assignee: LG Innotek Co., Ltd.
    Inventor: Ji Hoon Kim
  • Patent number: 7884402
    Abstract: Provided is an image sensor. According to embodiments, the subject image sensor can include a photodiode for converting incident light into electrical signals, a reset transistor for resetting a voltage value of a unit pixel, a drive transistor for providing an output voltage, a select transistor for selecting the unit pixel, a storage capacitor for storing electrons leaking from the photodiode, and a switching transistor for controlling the flow of charge to and from the storage capacitor. The switching transistor can be disposed connected to a node between the photodiode and the reset transistor, and the storage capacitor can be disposed at a side of the switching transistor.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: February 8, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: An Do Ki
  • Patent number: 7883957
    Abstract: Provided is an image sensor and a method for manufacturing the same. In the image sensor, a first substrate has a lower metal line and circuitry thereon. A crystalline semiconductor layer contacts the lower metal line and is bonded to the first substrate. A photodiode is provided in the crystalline semiconductor layer and electrically connected with the lower metal line. A pixel isolation layer is formed in regions of the photodiode.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: February 8, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Joon Hwang
  • Patent number: 7883920
    Abstract: Provided are methods for manufacturing an image sensor. A method for manufacturing an image sensor can include: forming a readout circuitry on a substrate; forming an electrical junction region in the substrate; forming an interconnection connected to the electrical junction region; and forming an image sensing device on the interconnection. The readout circuitry can be formed on a first substrate. The electrical junction region can be formed in the first substrate to electrically connect the image sensing device with the readout circuitry. The image sensing device can be formed using a second substrate that is then bonded on the interconnection.
    Type: Grant
    Filed: September 5, 2008
    Date of Patent: February 8, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Joon Hwang
  • Patent number: 7883928
    Abstract: An image sensor and fabricating method thereof are provided. The image sensor can include a color filter on a semiconductor substrate, a microlens on the color filter layer, and a carbon-doped low temperature oxide layer on the microlens.
    Type: Grant
    Filed: September 20, 2007
    Date of Patent: February 8, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Cheon Man Shim
  • Patent number: 7884441
    Abstract: Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a plurality of device isolation layers disposed in a semiconductor substrate, the device isolation layers extending in a word line direction and spaced apart from each other; a plurality of floating gate devices extending in a bit line direction perpendicular to the device isolation layer and spaced apart from each other; a source region and a drain region disposed at sides of the floating gate device; an insulation layer disposed on the floating gate device and the source region, and a polysilicon line extending in the word line direction and connected to the drain region.
    Type: Grant
    Filed: November 19, 2008
    Date of Patent: February 8, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Nam Yoon Kim
  • Patent number: 7883950
    Abstract: Disclosed is a method of manufacturing a semiconductor device. The method comprises consecutively depositing and patterning polysilicon and mask material on a substrate to form a polysilicon layer and a mask layer, reducing a width of the polysilicon layer, depositing and etching insulating material on the substrate to form a spacer on a lateral side of the polysilicon layer, and forming a source/drain region in the substrate at sides of the spacer.
    Type: Grant
    Filed: October 19, 2007
    Date of Patent: February 8, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Ji Ho Hong
  • Patent number: 7879219
    Abstract: The subject invention pertains to methods for processing a solid material (M1X) comprising a solid solution of a non-metal species (X) in a metal or semi-metal (M1) or a compound between the non-metal species and the metal or semi-metal is immersed in a molten salt (M2Y). A cathodic potential is applied to the material to remove a portion of the non-metal species by electro-deoxidation. To remove the non-metal species at lower concentrations, a source of a reactive metal (M3) is immersed in the molten salt and is electronically connected to the material. Reactions occur at the material, where the non-metal species dissolves in the salt, and at the reactive metal, which reacts with the non-metal species dissolved in the salt to form a reaction product more stable than a compound between the non-metal species and the metal or semi-metal (M1). The non-metal species is thus removed from the solid material.
    Type: Grant
    Filed: December 2, 2002
    Date of Patent: February 1, 2011
    Assignee: Metalysis Limited
    Inventors: Derek John Fray, Robert Charles Copcutt
  • Patent number: 7880205
    Abstract: Disclosed is an image sensor. The image sensor includes a semiconductor substrate including unit pixels, an interlayer dielectric layer including metal interconnections formed on the semiconductor substrate, a plurality of bottom electrodes formed on the interlayer dielectric layer in correspondence with the unit pixels, the plurality of bottom electrodes includes bottom electrodes having at least two different sizes, a photodiode formed on the interlayer dielectric layer including the bottom electrodes, and color filters formed on the photodiode in correspondence with the unit pixels.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: February 1, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Chang Hun Han
  • Patent number: 7880242
    Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a gate insulating layer with a high dielectric constant (k) and a polysilicon layer on a gate metal layer. The gate metal layer can include silicon atoms. Electron mobility can be improved, and production residue and damage can be minimized.
    Type: Grant
    Filed: October 22, 2007
    Date of Patent: February 1, 2011
    Assignee: Dongbu Hitek Co., Ltd.
    Inventor: Han Choon Lee