Patents Represented by Attorney Sixbey, Friedman, Leedom & Ferguson, PC
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Patent number: 6867432Abstract: In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into the active layer. A thin film comprising SiOxNy formed to cover the active layer and then a gate insulating film comprising a silicon oxide film formed on the thin film comprising SiOxNy. Also, a thin film comprising SiOxNy is formed under the active layer. The active layer includes a metal element at a concentration of 1×1015 to 1×1019 cm?3 and hydrogen at a concentration of 2×1019 to 5×1021 cm?3.Type: GrantFiled: February 5, 1998Date of Patent: March 15, 2005Inventor: Satoshi Teramoto
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Patent number: 6217477Abstract: An automatic transmission control system for controlling a gear ratio of an automatic transmission connected to an engine so as to bring an engine speed of rotation to a target speed of rotation predetermined according to a vehicle speed and a throttle opening of the engine.Type: GrantFiled: March 31, 1997Date of Patent: April 17, 2001Assignee: Mazda Motor CorporationInventors: Hidetoshi Nobumoto, Hiromasa Yoshida
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Patent number: 6116035Abstract: A hot heat source heat exchanger (1) receives heat from a primary refrigerant circuit (A) to evaporate liquid refrigerant. The hot heat source heat exchanger (1) is connected to a cold heat source heat exchanger (2) through a gas flow pipe (4) and a liquid flow pipe (5). An indoor heat exchanger (3) is connected to the gas flow pipe (4) through a gas pipe (6) and connected to the liquid flow pipe (5) through a liquid pipe (7). Gas refrigerant evaporated in the hot heat source heat exchanger (1) flows into at least the cold heat source heat exchanger (2). In the cold heat source heat exchanger (2), the gas refrigerant is condensed and refrigerant flow with respect to the indoor heat exchanger (3) is changed in accordance with a cooling or a heating operation requested by the indoor heat exchanger. In the indoor heat exchanger (3), refrigerant is condensed or evaporated.Type: GrantFiled: March 5, 1998Date of Patent: September 12, 2000Assignee: Daikin Industries, Ltd.Inventors: Osamu Tanaka, Takashi Matsuzaki, Kazuhide Mizutani, Yasushi Hori, Toru Inazuka
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Patent number: 6092719Abstract: A container body formed from two substantially identical interlocking container members with each of the container members comprising a substantially planer base portion and a plurality of opposing sidewalls connected to the base portion and tab portions extending from at least one pair of the opposing sidewalls with each of the tab portions including an opening and an adjacent interference element is set forth. The interference elements of a first of the two container members is received in respective openings of a second of the two container members for securing the second container member in an inverted condition with respect to the first container member.Type: GrantFiled: February 19, 1998Date of Patent: July 25, 2000Assignee: Graphic Packaging CorporationInventor: James L. Capo
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Patent number: 6093934Abstract: Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm.sup.2 /Vs and an S value smaller than 100 mV/dec. can be obtained.Type: GrantFiled: January 17, 1997Date of Patent: July 25, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Teramoto, Jun Koyama, Yasushi Ogata, Masahiko Hayakawa, Mitsuaki Osame, Hisashi Ohtani, Toshiji Hamatani
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Patent number: 6093935Abstract: In a process for manufacturing a thin film transistor having a semiconductor layer constituting source and drain regions and a channel forming region, by the semiconductor layer being made thinner in the source and drain regions than in the channel forming region a structure is realized wherein, at the boundary between the source region and the channel forming region and the boundary between the drain region and the channel forming region, portions where electric field concentrations occur are displaced from the portion where a channel is formed. By reducing the OFF current (the leak current) without also reducing the ON current, a high mutual conductance is realized.Type: GrantFiled: September 19, 1996Date of Patent: July 25, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Naoto Kusumoto
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Patent number: 6079788Abstract: A device for removing individual fiber tufts from a plurality of fiber bins of a brush making machine comprises a tuft remover, a counterpart matching the tuft remover and a movable slide arranged between the counterpart and the fiber bins. The slide has a plurality of through-passages each of which is associated with one of the fiber bins. The outer passages of the slide are inclined at an angle to the central passage. Between the central fiber bin and each of the outer fiber bins an associated ram is arranged. Each ram has an end face which faces the slide and either bears on one side surface area of the slide or applies pressure to the opposite end of one of the outer through-passages, depending on the respective position of the slide. The device allows the tuft remover to selectively pick up tufts of three different types of fiber.Type: GrantFiled: August 18, 1998Date of Patent: June 27, 2000Assignee: G. B. Boucherie N.V.Inventor: Bart Gerard Boucherie
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Patent number: 6079387Abstract: An air intake control system for an engine equipped with an exhaust gas recirculation feature controls an exhaust gas recirculation valve according to an amount of air charge dictated by an amount of intake air detected by an air flow sensor to deliver a target amount of air charge and control an amount of air charge meeting an estimated amount of air charge estimated under the condition that the control of exhaust gas recirculation valve according to an amount of air charge is interrupted.Type: GrantFiled: July 22, 1998Date of Patent: June 27, 2000Assignee: Mazda Motor CorporationInventors: Kiyotaka Mamiya, Michihiro Imada, Takeo Yamauchi, Masayuki Tetsuno
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Patent number: 6060725Abstract: A thin film transistor including a semiconductor film including silicon formed on an insulating surface; a channel region formed within the semiconductor film; and source and drain regions formed within the semiconductor film with the channel region interposed between the source and drain regions, each of the source and drain regions having one conductivity type, wherein the source and drain regions contain a catalyst element for promoting a crystallization of silicon at a concentration not higher that 1.times.10.sup.20 atoms/cm.sup.3, and wherein a concentration of the catalyst element in the channel region is lower than 1.times.10.sup.17 atoms/cm.sup.3 and the concentration in the channel region is lower than that in the source and drain regions.Type: GrantFiled: September 19, 1997Date of Patent: May 9, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hongyong Zhang, Toru Takayama, Yasuhiko Takemura
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Patent number: 6054739Abstract: In producing a semiconductor device by annealing with laser light irradiation, while a linear laser light is scanned in a direction perpendicular to a line, the annealing is performed for a semiconductor material. In this state, since an anneal effect in a beam lateral direction corresponding to a line direction is 2 times or more different than that in the scanning direction, a plurality of semiconductor elements are formed along a line direction in which the linear laser light is irradiated. Also, a line direction connecting the source and drain region of a thin film transistor is aligned to the line direction of the linear laser light.Type: GrantFiled: January 21, 1998Date of Patent: April 25, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Naoto Kusumoto, Koichiro Tanaka
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Patent number: 6051453Abstract: A process for fabricating a semiconductor device comprising the step of, after patterning the silicon film crystallized to a low degree by thermally annealing an amorphous silicon film into an island by etching, irradiating an intense light of a visible light or a near infrared radiation to effect a short-period annealing (RTA) to the silicon film of low crystallinity. Thus, the crystallinity of the silicon film is improved and the silicon film is densified in a short-period.Type: GrantFiled: September 5, 1996Date of Patent: April 18, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Yasuhiko Takemura
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Patent number: 6049092Abstract: A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an loff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.Type: GrantFiled: April 10, 1997Date of Patent: April 11, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toshimitsu Konuma, Akira Sugawara, Yukiko Uehara, Hongyong Zhang, Atsunori Suzuki, Hideto Ohnuma, Naoaki Yamaguchi, Hideomi Suzawa, Hideki Uochi, Yasuhiko Takemura
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Patent number: 6048440Abstract: An improved flexible manufacturing process for making molded fiber products uses a molding machine provided with a large number of ports for mounting a variety of molds. Quick release mold attachments permit rapid changeover of production output. The molds used are designed to have a predetermined total height, and platen stops maintain this design separation during transfer of the molded product. An expanded stock chest is provided to permit a higher pulp usage rate. Separate positive air supply lines are provided for the different transfer mold sites. Using these separate lines, a novel air volume and flow control method is provided to control the volume of air applied to release products from transfer molds, permitting manufacture of a variety of complex structures. The air flow controls permit control of both the rate of flow and the duration of the selected rate of flow of positive pressure air, thus providing total volume control.Type: GrantFiled: July 21, 1997Date of Patent: April 11, 2000Assignee: Moulded Fibre Technology, Inc.Inventor: Roger J. Baker
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Patent number: 6041705Abstract: A rotary silk screen printing machine or press with a modular design of the individual printing mechanisms and fully integrated control modules within a digital network system of the printing machine is set forth.As a result of the logical, modular design of the individual printing mechanisms, on a given printing machine base with a continuous conveyor belt fixed between two main rollers and which is driven by a main drive motor, it is possible to insert, replace and reprogram individual printing mechanisms. Both during the installation of a new printing system and when reequipping existing systems, considerable technical and economic advantages arise.Type: GrantFiled: December 17, 1998Date of Patent: March 28, 2000Inventor: Alexander Lintner
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Patent number: 6043105Abstract: A method of manufacturing a semiconductor device having a non-single crystalline semiconductor layer including an intrinsic or substantially instrinsic silicon which contains hydrogen or halogen and is formed on a substrate in a reaction chamber which may have a substrate holder. Sodium is removed from the inside of the reaction chamber and/or the surface of the substrate holder to remove sodium therefrom so that the concentration of sodium in the semiconductor layer is preferably 5.times.10.sup.18 atoms/cm.sup.3 or less.Type: GrantFiled: September 12, 1997Date of Patent: March 28, 2000Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: 6038866Abstract: In a gas pressure-driven type cryogenic refrigerating machine, an inner space of a cylinder 2 is divided into a lower pressure room 20, an upper pressure room 29 and expansion rooms 30, 31 by a slack piston 17 and a displacer 22 connected to the slack piston, a rotary valve 35 alternately changes between a high-pressure valve-open position for supplying high-pressure helium gas to the upper pressure room 29 and the expansion rooms 30, 31 and a low-pressure valve-open position for discharging the helium gas in the upper pressure room 29 and the expansion rooms 30, 31, and a difference in gas pressures between the upper and lower pressure rooms 29, 30 causes the slack piston 17 to be driven to reciprocate the displacer 22 thereby producing a cold condition at an extremely low temperature level.Type: GrantFiled: May 4, 1998Date of Patent: March 21, 2000Assignee: Daikin Industries, Ltd.Inventors: Masakazu Okamoto, Toshiyuki Kurihara
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Patent number: 6039682Abstract: Composite paperboard containers formed from a first substantially planar sheet of paperboard material having a content contacting surface and a back surface, a first embossed sheet of paperboard material having a plurality of raised portions adhered to the back surface of the first planar sheet and a second embossed sheet of paperboard material having a plurality of raised portions adhered to the first embossed sheet of paperboard material. Additional planar sheets or embossed sheets may be added as desired in order to achieve the desired flexural stiffness and thermal resistance.Type: GrantFiled: November 20, 1997Date of Patent: March 21, 2000Assignee: Fort James CorporationInventors: Jerome G. Dees, Kirk Kimbel
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Patent number: 6038968Abstract: In a stencil printer, a printing drum is provided with a clamp plate for clamping an end portion of a stencil master, thereby holding the stencil master on the printing drum. A paper supply mechanism supplies printing sheets to the printing drum in synchronization with rotation of the printing drum. A first motor drives the paper supply mechanism by way of a first transmission mechanism, and a second transmission mechanism is operatively connected to the first transmission mechanism to be driven by the first motor by way of the first transmission mechanism, thereby rotating the printing drum. A phase adjustment mechanism driven by a second motor drives the second transmission mechanism with the first transmission mechanism held stopped, thereby changing the relative phases of rotation of the printing drum and sheet supply operation of the paper supply means. A drum position sensor generates a detecting signal upon detection that the printing drum comes to a reference position.Type: GrantFiled: August 17, 1998Date of Patent: March 21, 2000Assignee: Riso Kagaku CorporationInventors: Yoshikazu Hara, Katsuro Motoe, Hisashi Sanagi
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Patent number: RE37441Abstract: A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer having a second conductivity type opposite the first conductivity type are laminated in this order. The first (or third) non-single-crystal semiconductor layer is disposed on the side on which light is incident, and is P-type. The I-type non-single-crystal semiconductor layer has introduced thereinto a P-type impurity, such as boron which is distributed so that its concentration decreases towards the third (or first) non-single-crystal semiconductor layer in the thickness direction of the I-type layer.Type: GrantFiled: October 8, 1997Date of Patent: November 13, 2001Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventor: Shunpei Yamazaki
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Patent number: D423470Type: GrantFiled: January 22, 1999Date of Patent: April 25, 2000Assignee: SCM Microsystems GmbHInventors: Wolfgang Neifer, Robert Schneider