Patents Represented by Attorney Smith, Gambrell & Russell, LLP
  • Patent number: 8349725
    Abstract: The present invention is a method of manufacturing a semiconductor device comprising: forming a recess in an interlayer insulating film formed on a substrate surface, the recess being configured to be embedded with an upper conductive channel mainly made of copper to be electrically connected to a lower conductive channel; supplying a gas containing an organic compound of manganese, and forming a barrier layer made of a compound of manganese for preventing diffusion of copper to the interlayer insulating film, such that the barrier layer covers an exposed surface of the interlayer insulating film; after the formation of the barrier layer, supplying organic acid to the barrier layer in order to increase a ratio of manganese in the compound of manganese forming the barrier layer; after the supply of the organic acid, forming a seed layer mainly made of copper on a surface of the barrier layer; after the formation of the seed-layer, heating the substrate in order to separate out manganese from on the surface of
    Type: Grant
    Filed: February 20, 2009
    Date of Patent: January 8, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Hiroshi Sato, Hitoshi Itoh, Kenji Matsumoto
  • Patent number: 8347901
    Abstract: The present invention provides a substrate cleaning method capable of removing particles from the entire surface of a substrate to be processed at a high removing efficiency. In the substrate cleaning method according to the present invention, a substrate to be processed W is immersed in a cleaning liquid in a cleaning tank 12. Then, ultrasonic waves are generated in the cleaning liquid contained in the cleaning tank 12, so that the substrate to be processed W is subjected to an ultrasonic cleaning process. While the substrate to be processed is being cleaned, a dissolved gas concentration of a gas dissolved in the cleaning liquid contained in the cleaning tank is changed.
    Type: Grant
    Filed: March 13, 2007
    Date of Patent: January 8, 2013
    Assignee: Tokyo Electron Limited
    Inventors: Tsukasa Watanabe, Naoki Shindo, Takahiro Furukawa, Yuji Kamikawa
  • Patent number: 8342504
    Abstract: An image forming apparatus (100) is equipped with a left-side cover (2), manual supply tray (10b), a carry guide (31) and a lift plate (33), and these are rotatably supported by a third shaft (35). The apparatus is reduced in size and a protrusion length L of the lift plate (33) is enlarged. The change in inclination angle of the lift plate (33) is reduced and a paper-sheet supply characteristic, even when the amount of paper sheets placed on the manual supply tray (10b) changes, is stabilized.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: January 1, 2013
    Assignee: Kyocera Mita Corporation
    Inventor: Kiyonori Yamamoto
  • Patent number: 8346434
    Abstract: When a vehicle is turning, it is determined whether an inside turning wheel has sufficient grip force. If the inside wheel has sufficient grip force, left and right forces orthogonally input to the vehicle body are calculated based on longitudinal and lateral tire forces, and are checked if there is a difference in the left and right forces. If there is such a left-right force difference and the vehicle is not undergoing a braking operation, the turning angle of the inside wheel is corrected using a left-right independent steering device that independently controls the turning angles of left and right wheels, so that the difference becomes zero. Thus, the difference in left and right forces laterally input to the vehicle body is reduced to minimize a jack-up force. This improves the driving stability and achieves a good roll feel by means of a jack-down force, thereby achieving improved driving feel.
    Type: Grant
    Filed: January 9, 2008
    Date of Patent: January 1, 2013
    Assignee: Fuji Jukogyo Kabushiki Kaisha
    Inventors: Yuichiro Tsukasaki, Masaru Kogure
  • Patent number: 8346137
    Abstract: A developing device includes a developing container for accommodating a two-component developer; a developer bearing member for bearing and conveying the developer, a fixed magnet including a release pole for releasing the developer from the developer bearing member, being fixed to the inside of the developer bearing member; and a backflow prevention member that is a sheet-shaped member disposed along the entire length in the longitudinal direction of the developer bearing member so as to be upstream in the direction of rotation of the developer bearing member as viewed from the release pole, the backflow prevention member being disposed so that a proximal end portion thereof is fixed to an inside surface of the developing container, and a distal end portion thereof is in contact with or adjacent to the developer bearing member and facing downstream in the direction of rotation of the developer bearing member.
    Type: Grant
    Filed: August 3, 2010
    Date of Patent: January 1, 2013
    Assignee: Kyocera Document Solutions, Inc.
    Inventors: Eiji Gyoutoku, Koju Yamamoto, Norio Kubo
  • Patent number: 8345721
    Abstract: A method to control an LD (laser diode) is disclosed. The method compares the operating temperature of the LD with a transition temperature. When the former temperature exceeds the latter, the modulation current is set based on the bias current, which is independently determined by the APC loop. On the other hand, the operating temperature is less than the transition temperature; the modulation current is determined by the operating temperature.
    Type: Grant
    Filed: June 17, 2010
    Date of Patent: January 1, 2013
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Moriyasu Ichino, Hiroto Ishibashi, Toru Ukai, Yuanzhe Li
  • Patent number: 8342513
    Abstract: When a sheet cassette (10a) is pulled out of the body of an image forming apparatus (100), winding pulleys (40a and 40b) are rotated by the weight of a lift plate. An idle gear (47) also is rotated by a predetermined amount, so that the engagement portion (47b) thereof engages with a second arm portion (50c) of a torsion spring (50). Since a force exerted by the torsion spring (50) is set greater than the force that rotates the idle gear (47) by downward movement of lift plate (30), rotation of the idle gear (47) and winding pulley (40a) is regulated, and thus the upper surface of lift plate (30) stops in a substantially constant position with respect to sheet supply opening portions (31a and 31b).
    Type: Grant
    Filed: December 16, 2011
    Date of Patent: January 1, 2013
    Assignee: Kyocera Mita Corporation
    Inventor: Yoshihiro Yamaguchi
  • Patent number: 8337659
    Abstract: A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.
    Type: Grant
    Filed: October 12, 2005
    Date of Patent: December 25, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Takehiko Orii, Kenji Sekiguchi, Noritaka Uchida, Satoru Tanaka, Hiroki Ohno
  • Patent number: 8338862
    Abstract: A semiconductor device includes a substrate on which a GaN channel layer, an AlGaN electron supply layer and a GaN cap layer are stacked in this order, a gate electrode formed on the GaN cap layer, and a source electrode and a drain electrode formed on the AlGaN electron supply layer so as to interpose the gate electrode. A first recess is formed in the GaN cap layer and being located between the gate electrode and the source electrode. A thickness of the GaN cap layer in a bottom of the first recess is less than that of the GaN cap layer located under the gate electrode.
    Type: Grant
    Filed: November 24, 2010
    Date of Patent: December 25, 2012
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Fumio Yamada, Kazutaka Inoue
  • Patent number: 8340896
    Abstract: A road shape recognition device includes: distance and height detecting means for detecting distance data having a distance and height in real space regarding a road surface where a vehicle is traveling at multiple mutually different points; approximation line calculating means for dividing the plurality of distance data into near and far groups as viewed from the vehicle to calculate an approximation line of the distance data for each group each time the distance data of the boundary portion between the two groups is transferred from one of the groups to the other; statistics calculating means for calculating statistics from the corresponding approximation line for each group where the distance data is transferred; and road shape model generating means for selecting one out of combinations of the approximation lines to generate a road shape model using the selected combination.
    Type: Grant
    Filed: May 18, 2010
    Date of Patent: December 25, 2012
    Assignee: Fuji Jukogyo Kabushiki Kaisha
    Inventor: Toru Saito
  • Patent number: 8337794
    Abstract: Silicone rubber containing a fumed silica doped with potassium by means of aerosol.
    Type: Grant
    Filed: December 1, 2008
    Date of Patent: December 25, 2012
    Assignee: Evonik Degussa GmbH
    Inventors: Mario Scholz, Helmut Mangold
  • Patent number: 8340147
    Abstract: A laser diode includes an n-type semiconductor region, a p-type semiconductor region, a semiconductor mesa provided between the n-type semiconductor region and the p-type semiconductor region, the semiconductor mesa including an active layer, and a semiconductor burying region located between the n-type semiconductor region and the p-type semiconductor region, the semiconductor burying region being provided on a side face of the semiconductor mesa. The semiconductor burying region includes an n-type semiconductor burying layer and a p-type semiconductor burying layer. The n-type semiconductor burying layer is provided between the p-type semiconductor region and the p-type semiconductor burying layer. The p-type semiconductor burying layer is doped with an element that forms an electron trapping level in the band gap of the p-type semiconductor burying layer.
    Type: Grant
    Filed: October 12, 2010
    Date of Patent: December 25, 2012
    Assignee: Sumitomo Electric Industries, Ltd.
    Inventors: Noriaki Kaida, Takahiko Kawahara
  • Patent number: 8333914
    Abstract: Dry liquids having a particle size distribution (cumulative undersize) D10% ?80 to 140 ?m D50% 140 to 200 ?m D90% 190 to 340 ?m are prepared by passing the liquids and a hydrophobic, pyrogenically prepared silica through a clearly defined, spatially limited shear zone in which the liquids are broken up into small droplets and are surrounded by the hydrophobic, pyrogenically prepared silica.
    Type: Grant
    Filed: November 3, 2006
    Date of Patent: December 18, 2012
    Assignee: Evonik Degussa GmbH
    Inventors: Holger Pitsch, Josef Piroth, Thomas Riedemann, Heike Riedemann, Ann Gray, Frank Dieter Huenig
  • Patent number: 8334126
    Abstract: The invention relates to an isolated polynucleotide having a polynucleotide sequence which codes for the alr gene, and a host-vector system having a coryneform host bacterium in which the alr gene is present in attenuated form and a vector which carries at least the alr gene according to SEQ ID No 1, and the use of polynucleotides which comprise the sequences according to the invention as hybridization probes.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: December 18, 2012
    Assignee: Evonik Degussa GmbH
    Inventors: Andreas Tauch, Michael Binder, Walter Pfefferle, Georg Thierbach, Jörn Kalinowski, Alfred Pühler
  • Patent number: 8328930
    Abstract: Pigment preparation containing at least one pigment and at least one compound of the general formula CH3—(CH2)n—CH2—O—[(CH2)p—O]m—H. The pigment preparation can be produced by dispersing and drying. It can be used for coloration and/or antistaticization in waterborne color and varnish systems, emulsion paints, printing inks, liquid-ink systems and coating systems.
    Type: Grant
    Filed: May 20, 2008
    Date of Patent: December 11, 2012
    Assignee: Evonik Degussa GmbH
    Inventors: Gerd Tauber, Stephan Lüdtke, Ralph McIntosh, Werner Kalbitz, Jutta Zimmermann, Alfons Karl, Stephanie Frahn
  • Patent number: 8324326
    Abstract: An epoxy resin composition for encapsulating a semiconductor chip according to this invention comprises (A) a crystalline epoxy resin, (B) a phenol resin represented by general formula (1): wherein R1 and R2 are independently hydrogen or alkyl having 1 to 4 carbon atoms and two or more R1s or two or more R2s are the same or different; a is integer of 0 to 4; b is integer of 0 to 4; c is integer of 0 to 3; and n is average and is number of 0 to 10, (C) a (co)polymer containing butadiene-derived structural unit or its derivative, and (D) an inorganic filler in the amount of 80 wt % to 95 wt % both inclusive in the total epoxy resin composition.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: December 4, 2012
    Assignee: Sumitomo Bakelite Company, Ltd.
    Inventors: Takahiro Kotani, Hidetoshi Seki, Masakatsu Maeda, Kazuya Shigeno, Yoshinori Nishitani
  • Patent number: 8323599
    Abstract: Disclosed herein is a layered, three-way conversion catalyst having the capability of simultaneously catalyzing the oxidation of hydrocarbons and carbon monoxide and the reduction of nitrogen oxides being separated in a front and rear portion is disclosed. Provided is a catalytic material of at least two front and two rear layers in conjunction with a substrate, where each of the layers includes a support, all layers comprise a platinum group metal component, and the rear bottom layer is substantially free of a ceria-containing oxygen storage component (OSC).
    Type: Grant
    Filed: November 22, 2010
    Date of Patent: December 4, 2012
    Assignee: Umicore AG & Co. KG
    Inventors: John G. Nunan, Raoul Klingmann, Ryan Andersen, Davion Clark, David H. Moser
  • Patent number: 8316576
    Abstract: A fishing lure for producing a desired sound as the lure sinks in a fluid has a proximal end and a distal end, a first side wall and a second side wall between the proximal end and the distal end, and an upper surface and a lower surface between the proximal end and the distal end. A central chamber is positioned in the body between the lower surface and the upper surface and intermediate the front end and the rear end of the body. A rib is positioned in the central chamber proximate the lower surface. An upper weight and a lower weight are housed in the central chamber, with the lower weight detachably lodged proximate the rib in the central chamber. The upper weight pivots about the lower central weight as the lure sinks in the fluid to generate the desired sound vibrations.
    Type: Grant
    Filed: October 20, 2009
    Date of Patent: November 27, 2012
    Assignee: EBSCO Industries, Inc.
    Inventor: Bruce Brown
  • Patent number: 8316609
    Abstract: A panel unit (2) for constructional purposes has at least two joining flanges (10, 12) on opposite surfaces (4, 4?) located at, or adjacent to, a common edge of the panel unit, and projecting in mutually opposite directions. Two such panel units (2) may be juxtaposed end to end and secured by a two-part connector (17) having a base portion (18) that is adapted for attaching to a fixed structural element (20) and for anchoring to the flanges (12) on a first surface (4?) of the panel units 2, and a cap (19) adapted for anchoring to the flanges (10) on an opposite surface (4) of the panel units (2) and for anchoring to the base portion.
    Type: Grant
    Filed: June 12, 2008
    Date of Patent: November 27, 2012
    Assignee: Dan-Pal
    Inventor: Nir Ben-Zvi
  • Patent number: 8318614
    Abstract: A Plasma processing apparatus (100) introduces microwaves into a chamber (1) by a plane antenna (31) which has a plurality of holes. A material gas, which contains a nitrogen-containing compound and a silicon-containing compound, is introduced into the chamber (1) by using the plasma processing apparatus, and plasma is generated by the microwaves. Then, a silicon nitride film is deposited by the plasma on a surface of an object to be processed. The trap density of the silicon nitride film is controlled by adjusting the conditions of the plasma CVD process.
    Type: Grant
    Filed: March 25, 2008
    Date of Patent: November 27, 2012
    Assignee: Tokyo Electron Limited
    Inventors: Masayuki Kohno, Tatsuo Nishita, Toshio Nakanishi, Yoshihiro Hirota