Abstract: The oxide sintered body mainly consists of gallium, indium, and oxygen, and a content of the gallium is more than 65 at. % and less than 100 at. % with respect to all metallic elements, and the density of the sintered body is 5.0 g/cm3 or more. The oxide film is obtained using the oxide sintered body as a sputtering target, and the shortest wavelength of the light where the light transmittance of the film itself except the substrate becomes 50% is 320 nm or less. The transparent base material is obtained by forming the oxide film on one surface or both surfaces of a glass plate, a quartz plate, a resin plate or resin film where one surface or both surfaces are covered by a gas barrier film, or on one surface or both surfaces of a transparent plate selected from a resin plate or a resin film where the gas barrier film is inserted in the inside.

Abstract: A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.

Abstract: A substrate processing system includes a control section configured to control a series of transfer operations and preset to control operation of a container transfer apparatus, operation at a substrate access area, and operation of a substrate handling apparatus independently of each other. The control section includes a schedule creating portion configured to create a transfer schedule by individually adjusting operation timing of the container transfer apparatus, operation timing at the substrate access area, and operation timing of the substrate handling apparatus such that, in a state while a first lot of substrates are treated in the processing system, but the container transfer apparatus and the substrate access area are unoccupied, a container with a second lot of unprocessed substrates stored therein is transferred onto the substrate access area, thereby minimizing total transfer time.

Abstract: The present disclosure relates to endophytic fungi from higher plants such as a Pteromischum sp. plant, and to extracts and compounds from such fungi that have desirable biological activities, such as antifungal and immunosuppressive activities. The present disclosure further relates to compositions comprising such extracts and compounds, as well as methods of making and using the compositions.

Abstract: A method for using a film formation apparatus for a semiconductor process to form a thin film on a target substrate inside a reaction chamber includes performing a cleaning process to remove a by-product film deposited on a predetermined region in a gas route from a film formation gas supply system, which supplies a film formation gas contributory to film formation, through the reaction chamber to an exhaust system, by alternately repeating an etching step and an exhaust step a plurality of times in a state where the reaction chamber does not accommodate the target substrate. The etching step includes supplying a cleaning gas in an activated state for etching the by-product film onto the predetermined region, thereby etching the by-product film. The exhaust step includes stopping supply of the cleaning gas and exhausting gas by the exhaust system from a space in which the predetermined region is present.

Abstract: Disclosed is a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) a diazoquinone compound, (d1) an activated silicon compound and (d2) an aluminum complex. Also disclosed is a positive photosensitive resin composition containing (A) an alkali-soluble resin, (B) a diazoquinone compound, (C) a compound having two or more oxetanyl groups in one molecule and (D) a catalyst for accelerating the ring-opening reaction of the oxetanyl groups of the compound (C).

Abstract: A substrate heating apparatus includes a top plate arranged above a hot plate so that a vertical space is formed between the hot plate and the top plate. The top plate has an evacuated internal chamber serving as a vacuum insulating layer that suppresses heat transfer from a first surface of the top plate facing the hot plate to a second surface of the top plate opposite to the first surface. When heating the substrate, a gas flow flowing through the space between the hot plate and the top plate is generated.

Abstract: The present invention is a method of optimizing a process recipe of a substrate processing system including: a substrate processing apparatus that performs a film deposition process of a substrate to be processed according to a process recipe; a data processing unit that executes a calculation for optimizing the process recipe; and a host computer; the substrate processing apparatus, the data processing unit, and the host computer being connected to each other through a network.

Abstract: A method for using a film formation apparatus for a semiconductor process includes setting an idling state where a reaction chamber of the film formation apparatus accommodates no product target substrate therein, and then, performing a purging process of removing a contaminant present in an inner surface of the reaction chamber by causing radicals to act on the inner surface of the reaction chamber. The radicals are generated by activating a purging process gas containing oxygen and hydrogen as elements.

Abstract: A fabric wall panel includes a number of frame members for attachment to a wall to form a frame. Each frame member has a stationary jaw for attachment to the wall and a movable jaw pivotally attached to the stationary jaw by a flexible and stretchable hinge for rotation between an open position and a close position. Each frame member has an opening lock that locks the movable jaw in the open position to facilitate the insertion of fabric between the movable jaw and the stationary jaw. Each frame member also has one or more closing locks that connect the movable jaw to the stationary jaw to thereby hold the movable jaw in the closed position.

Abstract: This invention relates to a method for managing active safety for an automatically operating machine comprising a work surface and a work tool displaced according to a pre-established work program. The method consists of dividing (100) the work surface into several zones and, during the work program cycle and in response to detection (200) of an operator's intrusion into a first zone when the tool is active in a second zone, also consists of carrying out at least one of the following actions: keeping (210) the tool's programmed displacement at the normal speed if the tool's displacement is programmed in a zone not adjacent to the first one, keeping (220) the tool's programmed displacement at reduced speed if the tool's displacement is programmed in a zone adjacent to the first one and modifying (230) the work program if the tool's displacement is programmed in the first zone so that the tool's work can be continued in a zone other than the first one.

Abstract: An object of the present invention is to obtain a favorable etching shape in etching an organic film formed on a substrate. A semiconductor device manufacturing method according to the present invention comprises the steps of: etching with plasma a silicon-containing film and transferring a pattern of a pattern mask stacked on the silicon-containing film onto the silicon-containing film to form a patterned silicon-containing film; removing the pattern mask using plasma to expose the surface of the silicon-containing film; and etching the surface of the organic film through the patterned silicon-containing film by use of oxygen active species in plasma to form a concave portion on the organic film. Thereafter, the silicon-containing film is sputtered to form silicon-containing protection films on the inner wall surfaces of the concave portion. The concave portion is further etched in its depth direction through the patterned silicon-containing film by use of oxygen active species in plasma.

Abstract: A service gauge for determining refrigerant pressure and the saturated vapor equivalent temperature, or other parameters, for a refrigerant in an HVAC system. In one embodiment, the service gauge employs a bourdon tube with at least one attached strain gauge to sense the refrigerant pressure and produce an electronic pressure signal. In another embodiment, a magnet and rotary position sensor produces an electronic signal proportional to the refrigerant pressure. The electronic pressure signal from the output of the strain gauge or the rotary position sensor is connected to a microprocessor, which calculates and displays the refrigerant pressure, the saturated vapor equivalent temperature for a variety of refrigerants, produces instantaneous and time lapsed representations of those parameters, and other parameters of the refrigerant.

Abstract: A helmet shield attaching mechanism with which when raising a shield, the shield and/or an anti-fogging auxiliary shield will not catch on a window opening rim member for a head protecting body, in spite that the operation of raising the shield in a fully-closed state is comparatively simple and that the mechanism has a comparatively simple structure. The helmet shield attaching mechanism includes a stationary base member fixing to the head protecting body, a movable base member attaching to the stationary base member so as to be movable forward and backward with respect to the stationary base member, and the shield which is pivotally supported by the movable base member. When a substantially upward force acts on the shield which is in a fully-closed state, at least one cam follower provided to the shield or stationary base member relatively follows at least one cam surface formed on the stationary base member or shield, to move the shield forward substantially to the front side.

Abstract: A downstream side of a chute associated with at least one sorting hole is branched into a first chute and a second chute, through which coins ejected from the sorting hole are guided into first and second temporary storages, respectively. A route-switching mechanism is also provided that switches, between the two chutes, a route of the coins ejected from the sorting hole. The following control is conducted for the coins of a denomination to be ejected from the sorting hole. (i) Switching the route of the coins ejected from the sorting hole from the first chute to the second chute in appropriate timing to ensure that the last coin (CN) to be received into the first temporary storage enters the first chute, and (ii) controlling an ejection mechanism to eject, among coins following the last coin, all coins that have reached the ejection mechanism (6a) earlier that the above route-switching operation.

Abstract: Hydrophobic pyrogenic silica doped with potassium by means of aerosol is prepared by reacting a pyrogenic silica doped with potassium by means of aerosol with a surface-modifying agent. It can be used as a filler in silicone rubber.

Abstract: To provide a semiconductor optical device which can restrain laser characteristics from being deteriorated by excitation in a substrate mode and can reduce the number of manufacturing steps. A semiconductor optical device comprises a first DBR layer, provided on a semiconductor substrate, having first and second semiconductor layers stacked alternately, a first cladding layer, an active layer, and a second cladding layer. The semiconductor substrate has a bandgap higher than that of the active layer. The first DBR layer is transparent to light having an emission wavelength, while the first and second semiconductor layers have respective refractive indices different from each other. Since the first DBR layer is thus provided between the semiconductor substrate and first cladding layer, the guided light reaching the lower end of the first cladding layer, if any, is reflected by the first DBR layer, whereby light can be restrained from leaking to the semiconductor substrate.

Abstract: The present invention relates to an etching method for etching a film to form a concave portion therein with the use of a photoresist mask provided with an opening. In this method, there is determined, in advance, a first correlation between a parameter value and an opening dimension of the concave portion, as a process parameter for the etching process, when the etching process is conducted with the use of the mask provided with the opening of a reference opening dimension. In addition, there is determined, in advance, a second correlation between a variation in opening dimension of the mask and a variation in opening dimension of the concave portion. When conducting the etching process, an actual opening dimension of the mask is measured.

Abstract: The exhaust gas of internal combustion engines operated with a predominantly stoichiometric air/fuel mixture contains, as well as the gaseous hydrocarbon (HC), carbon monoxide (CO) and nitrogen oxide (NOx) pollutants, also ultrafine particulates. There is disclosed a catalytically active particulate filter, an exhaust gas cleaning system and a process for cleaning the exhaust gases of predominantly stoichiometrically operated internal combustion engines, as well as the gaseous CO, HC and NOx pollutants, also for removing particulates from the exhaust gas. The particulate filter comprises a filter body and a catalytically active coating consisting of two layers. Both layers contain alumina. The first layer contains palladium. The second layer contains rhodium. The latter is disposed above the first layer.