Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure.
Abstract: A beam parameter monitoring unit for coupling with an excimer or molecular fluorine (F2) laser resonator that produces an output beam having a wavelength below 200 nm includes an on-line laser pulse energy detector. This, in turn, allows output pulse energy stabilization to the same degree of accuracy, which is crucial for stability of exposure dose and other process parameters in microlithography and industrial applications.
Abstract: A bipolar transistor structure includes a collector region having a first conductivity type formed in a semiconductor substrate. A base region is formed over the collector region; the base region includes a highly doped lower layer having a second conductivity type opposite the first conductivity type formed on the collector region and a relatively low doped (or undoped) upper layer formed on the highly doped lower layer. An emitter region having the first conductivity type is formed on the upper layer of the base region.
Abstract: A method for opening an on-line brokerage account includes the steps of opening an on-line brokerage account for a user based on account information received from the user, the on-line brokerage account having one or more restrictions, generating an application based on the account information; requesting that the user submit required information with the application within a predetermined time to remove the one or more restrictions from the on-line brokerage account, and removing said one or more restrictions from the on-line brokerage account when the application including the required information is received within the predetermined time.
Type:
Grant
Filed:
August 21, 2000
Date of Patent:
November 22, 2005
Assignee:
Charles Schwab & Co., Inc.
Inventors:
Colleen Wallace, Harry Friman, Gee Kin Chou, Beth Devin, Janet Chapman
Abstract: A system and method for a uniform website platform are provided. For a representative embodiment, a website is created so that one or more of its web pages are subdivided into a series of panels. Each panel is associated with a collection of inserts. Each insert can include any combination of the objects that are normally found on web pages, including content and applications. Users request pages from the website using their browser programs. The responding web server dynamically selects inserts for each of the panels included in each requested page. The selection process may be based on any number of different selection criteria including user preferences and the country or region associated with the web site. The web server renders the selected panels to create each requested page. The dynamically created pages are then returned to the requesting browser.
Abstract: A method and apparatus is provided for stabilizing output beam parameters of a gas discharge laser by maintaining a molecular fluorine component of the laser gas mixture at a predetermined partial pressure using a gas supply unit and a processor. The molecular fluorine is provided at an initial partial pressure and is subject to depletion within the laser discharge chamber. Injections of gas including molecular fluorine are performed each to increase the partial pressure of molecular fluorine by a selected amount in the laser chamber preferably less than 0.2 mbar per injection, or 7% of an amount of F2 already within the laser chamber. A number of successive injections may be performed at selected intervals to maintain the constituent gas substantially at the initial partial pressure for maintaining stable output beam parameters.
Type:
Grant
Filed:
January 6, 2003
Date of Patent:
November 15, 2005
Assignee:
Lambda Physik AG
Inventors:
Hans-Stephan Albrecht, Klaus Wolfgang Vogler, Juergen Kleinschmidt, Thomas Schroeder, Igor Bragin, Vadim Berger, Uwe Stamm, Wolfgang Zschocke, Sergei Govorkov
Abstract: Infrared laser light generated by a solid state diode pumped transform-limited Ti:Sapphire laser is converted to UV wavelengths using third and fourth harmonic generation systems. The resulting output is tunable between approximately 187 and 333 nm. The combined solid state Ti:Sapphire laser and harmonic generation system includes feedback mechanisms for improved power and wavelength stability. The system can operate at pulse repetition rates of several thousand Hertz.
Type:
Grant
Filed:
August 24, 2004
Date of Patent:
November 8, 2005
Assignee:
Coherent, Inc.
Inventors:
William Michael Tulloch, Alan Reilly Fry, Jeremy Weston, William Eugene White, Eric Alan Wilson
Abstract: Spin-based microelectronic devices can be realized by utilizing ferromagnetic structures that make good ohmic contact with silicon, in order to avoid the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates, which are well-known and used in the industry. Thin layers of metal silicide, such as CoSi2 and NiSi2, are used as an intermediate layer between ferromagnetic contacts, such as cobalt and nickel contacts, and the silicon substrate. The thin silicide layers provide good ohmic contact between the ferromagnetic contacts and silicon, such that spin-polarized carriers can be injected into the silicon, and detected out of the silicon, without loss of spin polarization.
Type:
Grant
Filed:
December 22, 2003
Date of Patent:
November 8, 2005
Assignee:
National Semiconductor Corporation
Inventors:
Vladislav Vashchenko, Michael Mian, Peter J. Hopper
Abstract: A pre-ionizing arrangement for a gas laser includes two ceramic-jacketed ionizer electrodes extending into an enclosure including spaced-apart slab electrodes of the laser and a lasing gas at reduced pressure. RF power is applied to the dielectric-jacketed ionizer electrodes creating a gas discharge between the dielectric-jacketed ionizer electrodes. This discharge provides ions in the laser gas. The presence of these ions in the lasing gas facilitates ignition of a gas discharge between the slab electrodes for energizing the laser.
Type:
Grant
Filed:
January 28, 2004
Date of Patent:
November 8, 2005
Assignee:
Coherent, Inc.
Inventors:
Christian J. Shackleton, Phillip Gardner, William Clayton Brand, Raul Wong Gutierrez
Abstract: A combination metrology tool is disclosed which is capable of obtaining both thermal wave and optical spectroscopy measurements on a semiconductor wafer. In a preferred embodiment, the principal combination includes a thermal wave measurement and a spectroscopic ellipsometric measurement. These measurements are used to characterize ion implantation processes in semiconductors over a large dosage range.
Abstract: An application allows employees to submit suggestions and ideas for improving how a company does business. A presently preferred embodiment of the invention supports multiple points of entry, which can include an entry portal, which is a single point of entry to a Web application; a point of entry for employees within a specific business unit in a larger entity for submission of suggestions related to the business unit; a point of entry for motivated submitters with an idea about how to change the company's business; a central point of entry for ideas and suggestions; and a point of entry for ideas on improving a specific aspect of the company, for example the company's use of the Internet.
Abstract: Spin-based microelectronic devices can be realized by utilizing spin-polarized ferromagnetic materials positioned near, or embedded in, a semiconductor channel of a microelectronic device. Applying an electric field across the channel can cause carriers flowing through the channel to deviate toward one of the ferromagnetic materials, such that the spin of the carriers tends to align with the spin polarization of the respective material. Such a process allows for the controlled spin-polarization of carriers in a semiconductor channel, and hence the development of spin-based microelectronics, without having to inject spin-polarized carriers from a ferromagnet into a semiconductor channel. Such a process avoids the Schottky barrier problem plaguing existing approaches to spin-based microelectronics, while allowing the devices to be based on silicon substrates that are well-known and used in the industry.
Type:
Grant
Filed:
December 22, 2003
Date of Patent:
October 18, 2005
Assignee:
National Semiconductor Corporation
Inventors:
Vladislav Vashchenko, Michael Mian, Peter J. Hopper
Abstract: Method and apparatus for integrating distributed shared services system which integrates web based applications with each other and with other centralized application to provide a single sign-on approach for authentication and authorization services for distributed web sites requiring no access time back to the authentication/authorization server is provided.
Abstract: The subject invention relates to a wafer stage, such as may be used in optical wafer metrology instruments. The stage contains a wafer-chuck that can be connected to translation stages for the purpose of clamping and translating the wafer so that a plurality of sites on the wafer surface may be measured. The chuck includes a holder for mounting a reference sample. The holder is movable between a retracted position where the reference sample is held below the chuck surface and an extended position, such as where the surface of the reference sample is co-planar with the wafer surface. Therefore the holder may be installed within the area of the chuck that is utilized for wafer clamping. By this arrangement, the size of the wafer translation system can be reduced minimizing the stage travel and enabling increased spatial resolution, increased wafer throughput and reduced capital equipment and operating costs.
Abstract: An ellipsometer includes a light source for generating a probe beam of polychromatic light for interacting with a sample. The probe beam is passed through a first polarizer that imparts a known polarization state to the probe beam. The polarized probe beam is then directed to reflect from the sample. A second illumination source is switched on and off at a predetermined frequency to create an intensity modulated pump beam (the beam may also be chopped). The pump beam is directed normally against the subject producing a small illumination spot within the area illuminated by the probe beam. The pump induces localized changes in the dielectric properties of the subject. The pump-beam induced oscillations are picked up by the portion of the probe beam that is reflected from within the illumination spot of the pump beam.
Abstract: Point-by-point image contrast values are generated from secondary electron collection during unbiased electron or ion beam bombardment of an integrated circuit (IC) in a vacuum environment to quantify the physical and electrical integrity of connections within the device. These values are stored for each type of circuit cell under standard conditions to quantify and check the performance of individual cells on the device.
Type:
Grant
Filed:
October 8, 2003
Date of Patent:
October 4, 2005
Assignee:
National Semiconductor Corporation
Inventors:
William Ng, Kevin Weaver, Zachary Joshua Gemmill
Abstract: The use of scatterometry measurements is proposed for the evaluation of the implantation or annealing of dopants in a semiconductor. In accordance with the subject method, a probe beam of light illuminates the wafer having the dopants implanted therein. The light reflected from the sample is measured and subjected to a scatterometry analysis. The information derived is correlated to the implant region so that parameters of the implant, such as depth of a junction and lateral spreading of the implant or the dose of implanted ions can be evaluated.
Abstract: A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure as part of a real-time optical measurement process. The interpolated optical response is a continuous and (in a preferred embodiment) smooth function of measurement parameters, and it matches the theoretically-calculated optical response at the database-stored interpolation points.
Abstract: A system for characterizing periodic structures on a real time basis is disclosed. A multi-parameter measurement module generates output signals as a function of wavelength or angle of incidence. The output signals are supplied to a parallel processor, which creates an initial theoretical model and calculates the theoretical optical response. The calculated optical response is compared to measured values. Based on the comparison, the model configuration is modified to be closer to the actual measured structure. Thereafter, the complexity of the model is iteratively increased, by dividing the model into layers each having an associated width and height. The model is fit to the data in an iterative manner until a best fit model is obtained which is similar in structure to the periodic structure.
Abstract: A method is provided for erasing a nonvolatile memory cell that includes a source region, a drain region, a floating gate electrode and a control gate electrode to which an erase signal is applied. In accordance with the method, a source bias voltage is applied to the source region, a drain bias voltage is applied to the drain region, and a frequency/time domain based voltage signal is applied to the control gate electrode of the cell as the erase signal.
Type:
Grant
Filed:
September 17, 2003
Date of Patent:
September 20, 2005
Assignee:
National Semiconductor Corporation
Inventors:
Yuri Mirgorodski, Vladislav Vashchenko, Peter J. Hopper