Abstract: Some of the key optical components of lithography lasers are very sensitive to intensive UV radiation. Intensive UV radiation can cause color center formation in these components. The color centers are reason for laser energy dropping, worse laser-bandwidth and limited life-time. The on-line monitoring of the color-center formation during operation of the lithography lasers detecting laser induced fluorescence and investigation of the fluorescence spectrum can be helpful for maintenance of lithography lasers. The fluorescence signal is analyzed and delivers information about optics quality.

Abstract: An apparatus is disclosed for obtaining ellipsometric measurements from a sample. A probe beam is focused onto the sample to create a spread of angles of incidence. The beam is passed through a quarter waveplate retarder and a polarizer. The reflected beam is measured by a detector. In one preferred embodiment, the detector includes eight radially arranged segments, each segment generating an output which represents an integration of multiple angle of incidence. A processor manipulates the output from the various segments to derive ellipsometric information.

Abstract: An apparatus for characterizing multilayer samples is disclosed. An intensity modulated pump beam is focused onto the sample surface to periodically excite the sample. A probe beam is focused onto the sample surface within the periodically excited area. The power of the reflected probe beam is measured by a photodetector. The output of the photodetector is filtered and processed to derive the modulated optical reflectivity of the sample. Measurements are taken at a plurality of pump beam modulation frequencies. In addition, measurements are taken as the lateral separation between the pump and probe beam spots on the sample surface is varied. The measurements at multiple modulation frequencies and at different lateral beam spot spacings are used to help characterize complex multilayer samples. In the preferred embodiment, a spectrometer is also included to provide additional data for characterizing the sample.

Abstract: Method and system for providing stabilization techniques for high repetition rate gas discharge lasers with active loads provided in the discharge circuitry design which may include a resistance provided in the discharge circuitry.

Abstract: A F2 laser includes a laser tube filled with a laser gas mixture at least including molecular fluorine for generating a spectral emission including multiple closely-spaced lines in a wavelength range between 157 nm and 158 nm, including a first line centered around 157.62 nm and a second line centered around 157.52 nm, multiple electrodes within the discharge chamber connected with a power supply circuit for energizing the molecular fluorine, a laser resonator including a line selection unit for selecting one of the first and second lines of the multiple closely spaced lines and for supressing the other of the first and second lines, for generating a narrow bandwidth VUV output beam, and at least one intracavity polarizing element. The narrow bandwidth VUV output beam is polarized at least 95%, and may be 98% or more.

Abstract: An isolation structure having both deep and shallow components is formed in a semiconductor workpiece by etching the workpiece to define raised precursor active device regions separated by sunken precursor isolation regions. An oxidation mask is patterned to expose the precursor isolation regions, and the unmasked precursor isolation regions are exposed to oxidizing conditions to grow field oxides as the deep isolation component. Thermal growth of these field oxides creates topography which includes shallow recesses adjacent to the raised precursor active device regions. Deposition of conformal dielectric material such as high density plasma (HDP) deposited silicon oxide over the entire surface and within the recesses creates the shallow isolation component. Following planarization of the conformal dielectric material, fabrication of the device is completed by introducing conductivity-altering dopant into raised precursor active device regions.

Abstract: An ellipsometer, and a method of ellipsometry, for analyzing a sample using a broad range of wavelengths, includes a light source for generating a beam of polychromatic light having a range of wavelengths of light for interacting with the sample. A polarizer polarizes the light beam before the light beam interacts with the sample. A rotating compensator induces phase retardations of a polarization state of the light beam wherein the range of wavelengths and the compensator are selected such that at least a first phase retardation value is induced that is within a primary range of effective retardations of substantially 135° to 225°, and at least a second phase retardation value is induced that is outside of the primary range. An analyzer interacts with the light beam after the light beam interacts with the sample. A detector measures the intensity of light after interacting with the analyzer as a function of compensator angle and of wavelength, preferably at all wavelengths simultaneously.

Abstract: A broadband ellipsometer is disclosed with an all-refractive optical system for focusing a probe beam on a sample. The ellipsometer includes a broadband light source emitting wavelengths in the UV and visible regions of the spectrum. The change in polarization state of the light reflected from the sample is arranged to evaluate characteristics of a sample. The probe beam is focused onto the sample using a composite lens system formed from materials transmissive in the UV and visible wavelengths and arranged to minimize chromatic aberrations. The spot size on the sample is preferably less than 3 mm and the aberration is such that the focal shift over the range of wavelengths is less than five percent of the mean focal length of the system.

Abstract: This invention is an instrument adaptable for integration into a process tool the combines a number of instruments for surface characterization. As an integrated process monitor, the invention is capable of monitoring surface dishing, surface erosion and thickness of residue layers on work-pieces with little time delay. The invention is adaptable to making measurements while a wafer or work-piece is either wet or dry. A preferred embodiment includes an integrated optical profiler adapted to surface profiling in the presence of optical interference arising from retro-reflections from underlying optical non-uniformities Alternate embodiments include an integrated stylus profiler with vibration isolation.

Abstract: A method and apparatus are disclosed for evaluating relatively small periodic structures formed on semiconductor samples. In this approach, a light source generates a probe beam which is directed to the sample. In one preferred embodiment, an incoherent light source is used. A lens is used to focus the probe beam on the sample in a manner so that rays within the probe beam create a spread of angles of incidence. The size of the probe beam spot on the sample is larger than the spacing between the features of the periodic structure so some of the light is scattered from the structure. A detector is provided for monitoring the reflected and scattered light. The detector includes multiple detector elements arranged so that multiple output signals are generated simultaneously and correspond to multiple angles of incidence. The output signals are supplied to a processor which analyzes the signals according to a scattering model which permits evaluation of the geometry of the periodic structure.

Abstract: A simultaneously super pulsed Q-switched CO2 laser system for material processing is disclosed. The system comprises sealed-off folded waveguides with folded mirrors that are thin film coated to select the output wavelength of the laser. The system also comprises a plurality of reflective devices defining a cavity; a gain medium positioned within the cavity for generating a laser beam; a cavity loss modulator for modulating the laser beam, generating thereby one or more laser pulses; a pulsed signal generation system connected to the cavity loss modulator for delivering pulsed signals to the cavity loss modulator thereby controlling the state of optical loss within the cavity; a control unit connected to the pulsed signal generation system for controlling the pulsed signal generation system; and a pulse clipping circuit receptive of a portion of the laser beam and connected to the pulsed signal generation system for truncating a part of the laser pulses.

Abstract: A lithography laser system for incorporating with a semiconductor processing system includes a discharge chamber filled with a laser gas including molecular fluorine and a buffer gas, multiple electrodes within the discharge chamber and connected with a discharge circuit for energizing the laser gas, a resonator including the discharge chamber for generating a laser beam, and a processor. The processor runs an energy control algorithm and sends a signal to the discharge circuit based on said algorithm to apply electrical pulses to the electrodes so that the laser beam exiting the laser system has a specified first energy distribution over a group of pulses. The energy control algorithm is based upon a second energy distribution previously determined of a substantially same pattern of pulses as the group of pulses having the first energy distribution.

Abstract: An efficient tapered optical fiber bundle along with the method of manufacturing is presented. The tapered fiber bundle is fully fused to an induced shape with no interstitial space between fibers. To minimize fiber deformation and hence the tapered bundle's loss, the individual fibers are minimally deformed by positioning them in a fixture with predetermined geometry prior to fusion. The bundle could be optionally reshaped after fusion. The tapered bundle could then be used in its original form as a star coupler, or it could be cleaved and coupled to a multimode fiber, a multi-clad fiber, a cladding-pumped fiber, or an optical system to form an optical device. The resulting optical device has improved efficiency and lower loss compared with prior art devices.

Abstract: Alignment accuracy between two or more patterned layers is measured using a metrology target comprising substantially overlapping diffraction gratings formed in a test area of the layers being tested. An optical instrument illuminates all or part of the target area and measures the optical response. The instrument can measure transmission, reflectance, and/or ellipsometric parameters as a function of wavelength, polar angle of incidence, azimuthal angle of incidence, and/or polarization of the illumination and detected light. Overlay error or offset between those layers containing the test gratings is determined by a processor programmed to calculate an optical response for a set of parameters that include overlay error, using a model that accounts for diffraction by the gratings and interaction of the gratings with each others' diffracted field. The model parameters might also take account of manufactured asymmetries.

Abstract: A molecular fluorine (F2) laser system that includes a gaseous molecular fluorine gain medium contained in a laser tube, a resonant cavity, a power supply for exciting the gain medium to produce a laser beam having an ultra violet (UV) radiation output at substantially 157 nm and a red radiation output in the range of 620 to 760 nm, a discharge module connected to the laser tube for adding and withdrawing gas to the gain medium, a controller for controlling the power supply and the discharge module, and a photo diamond detector that receives a portion of the laser beam for measuring at least one optical parameter of the UV radiation such as energy, pulse energy, pulse shape, pulse width, etc. The photo diamond detector is substantially insensitive to the red radiation output that is also present in the laser beam.

Abstract: Infrared laser light generated by a solid state diode pumped transform-limited Ti:Sapphire laser is converted to UV wavelengths using third and fourth harmonic generation systems. The resulting output is tunable between approximately 187 and 333 nm. The combined solid state Ti:Sapphire laser and harmonic generation system includes feedback mechanisms for improved power and wavelength stability. The system can operate at pulse repetition rates of several thousand Hertz.

Abstract: A pixel cell array of a light valve does not rely upon photolithography to define inter-pixel spacing. Instead, adjacent pixels of the array are electronically insulated from one another by spacers formed by etching a dielectric layer conforming to sidewalls of a patterned sacrificial layer. Removal of the sacrificial layer, followed by formation of a metal layer over the dielectric spacer structures and chemical-mechanical polishing of the metal layer, completes fabrication of the array. The thickness of the spacer sidewalls, and hence inter-pixel spacing, is determined by the rate of formation of the conforming dielectric layer. This rate can be precisely controlled to produce spacer structures having a thickness of less than the minimum linewidth of a given photolithography system. In this manner, pixel arrays having significantly reduced inter-pixel spacing and correspondingly higher cell densities can be created.

Abstract: A source of optical pulses, comprises an optical source operable to generate ultrashort optical pulses at a first wavelength; and an optical fiber amplifier comprising an optical fiber having a core containing a dopant to provide optical gain at the first wavelength and anomalous dispersion over a wavelength range including the first wavelength and a second wavelength. The optical fiber receives the ultrashort optical pulses, amplifies the ultrashort optical pulses, and alters the wavelength of the ultrashort optical pulses to at least the second wavelength by the soliton-self-frequency shifting effect. Microstructured and/or tapered fibers can be used to provide the required dispersion characteristics. Pulses can be generated in one of three spectral regimes—monocolor solitons, multicolor solitons and continuous broadband spectra by adjusting the energy of the optical pulses, and tunability can be achieved by varying the power of pump light provided to the amplifier.

Abstract: The present invention is a process for measuring semiconductor device output capacitance and slew rate from switching-induced hot carrier luminescence. The process for determining the output capacitive loading of a semiconductor device includes measuring the peak switching-induced hot carrier luminescence and comparing it to previously correlated capacitance data. The process for determining the output slew rate of a semiconductor device by measuring the switching-induced hot carrier luminescence as a function of time, calculating a standard deviation of the luminescence data, and comparing it to previously correlated output slew rate data. The peak of a switching-induced hot carrier luminescence pulse directly relates to the driving capacitance and the standard deviation of a pulse relates to the rate of change of output voltage or slew rate.

Abstract: An apparatus and method for use in performing ablation or coagulation of organs and other tissue includes a metallized fabric electrode array which is substantially absorbent and/or permeable to moisture and gases such as steam and conformable to the body cavity. The array includes conductive regions separated by insulated regions arranged to produce ablation to a predetermined depth. Following placement of the ablation device into contact with the tissue to be ablated, an RF generator is used to deliver RF energy to the conductive regions and to thereby induce current flow from the electrodes to tissue to be ablated. As the current heats the tissue, moisture (such as steam or liquid) leaves the tissue causing the tissue to dehydrate. Suction may be applied to facilitate moisture removal. The moisture permeability and/or absorbency of the electrode carrying member allows the moisture to leave the ablation site so as to prevent the moisture from providing a path of conductivity for the current.