Abstract: Various voltage and current sources which are substantially independent of the positive supply rail are provided, some of which are also temperature independent.

Abstract: A Schottky-type diode has a conductor-to-semiconductor barrier height .phi..sub.B that is controlled by adjusting the thickness of a metal silicide layer (22) which forms a rectifying junction (20) with an N-type semiconductor (24). The silicide layer is constituted with two or more metals such as platinum and nickel.

Abstract: A signal-conditioning circuit provides an output signal (V.sub.O) at a frequency representative of an effect such as strain or temperature that acts on a resistance bridge (20) preferably arranged in a Wheatstone configuration. A pair of energizing voltages (V.sub.E1 and V.sub.E2) are supplied on corresponding lines (21 and 22) to energize the bridge. The signal-conditioning circuit contains an integrator (34 and C1), a comparator that compares the integrator output voltage (V.sub.I) with one of the energizing voltages (V.sub.E2), and switching circuitry (23 and 24) that suitably switches the polarity of the energizing voltages in response to the output voltage.

Abstract: Horizontal and vertical deflection windings in a deflection yoke coil assembly of a CRT (cathode ray tube) having stroke written or raster scan displays are driven by x and y analog deflection signals, respectively. Each of the x and y analog deflection signals are converted to x and y digital signals, respectively, sampled to provide x, y sample sets which are coupled to a digital x correction signal memory and a digital y correction signal memory, respectively. Geometric corrections are stored in the memories for each of a predetermined number of x, y signal set values which correspond, respectively, to a number of point locations over the CRT screen. The x and y corrections that are addressed from the memories are supplied to MDACs (multiplying digital to analog converters) and then to analog delay line filters which supply the x, y analog correction signals for summing with the x, y analog deflection signals, respectively.

Abstract: A device (16) for preventing an input signal (V.sub.I) applied to a terminal (12) of an integrated circuit from damaging a section (18) of the circuit contains a regular enhancement-mode insulated-gate FET (Q1 or Q2), a resistor (R1 or R2) that enables the regular FET to act temporarily like a "floating-gate" FET, and a thick-oxide insulated-gate FET (Q3).

Abstract: Gate sidewall spacers are created by a two-step procedure in fabricating a field-effect transistor using a protective material such as silicon nitride to prevent gate-electrode oxidation. In the first step, a layer (32) of insulating material is conformally deposited and then substantially removed except for small spacer portions (34) adjoining the sidewalls of a doped non-monocrystalline semiconductor layer (20A) destined to become the gate electrode (36). The second step consists of performing an oxidizing heat treatment to increase the thickness of the spacer portions. No significant gate dielectric encroachment occurs. Also, the spacers achieve a profile that substantially avoids electrical shorts.

Abstract: A field-programmable device contains a buffer (20) located between a pair of programmable circuits (14 and 16) along a column (10) connecting the circuits. The buffer provides increased current to the column portion connected to one of the circuits (16) without increasing the current supply requirements for the column portion connected to the other circuit (14). This permits the device to switch faster and/or to accommodate programmable circuits of large size. The buffer also enables the same select circuitry to be used in programming both circuits without causing a significant voltage between them during normal operation.

Abstract: A test device (40) has a patterned conductive layer (42 or 44) particularly adapted for use in an E-beam probe system (FIG. 3) to study how local electric fields influence probe voltage measurements. The layer is composed of two or more conductors (A and B.sub.J C and D.sub.J) separated from each other. Each conductor has a group of fingers. The fingers (F1.sub.p, F0.sub.p, F2, F0.sub.Q and F1.sub.Q) run parallel to one another and are at least partially interdigitated. The width of each finger is constant along its length. The widths of the fingers and the spacings between them vary from finger to finger according to a selected pattern.

Abstract: A switching device (22) responsive to an input voltage V.sub.A is powered by low and high internal supply voltages V.sub.L and V.sub.H. The device changes state as V.sub.A -V.sub.L passes a threshold voltage V.sub.T. After the device makes a desired change of state in response to rising V.sub.A, a hysteresis circuit (24) temporarily decreases V.sub.T below that which would otherwise be present. Likewise, after the device makes a desired change of state in the opposite direction when V.sub.A is falling, the hysteresis circuit temporarily decreases V.sub.T. In both cases, V.sub.T later automatically returns to its original value. This dynamic hysteresis prevents spikes in V.sub.L and V.sub.H from causing undesired changes in state.

Abstract: An on-chip regulated substrate bias voltage generator for an MOS integrated circuit includes a ring oscillator (10) for developing a true signal and its complement. The signals are applied to a charge pump (12) that includes two capacitors (C1 and C2) and a plurality of rectifiers (22, 24, and 26). The charge pump produces a substrate bias voltage (V.sub.BB) which is supplied to the gate of a depletion-mode field-effect transistor (28) whose source receives a reference voltage (V.sub.SS). The transistor forms part of a control circuit (14) coupled to the ring oscillator. In the N-channel case, the charge pumping action on the substrate drives the substrate bias negative until it reaches the sum of the reference voltage and threshold voltage of the depletion-mode transistor. This enables the control circuit to control the operation of the ring oscillator so as to regulate the substrate bias voltage.

Abstract: A double-ended code converter (10) contains three or more like-configured amplifiers (T.sub.O -T.sub.M+1). Each has a first flow electrode (E1), a second flow electrode (E2), and a control electrode (CE) for receiving a signal to control charge carriers moving from the first electrode to the second. The first electrodes are coupled to a circuit supply (12) which may be a current source or a voltage supply. The second electrodes are selectively coupled to one or the other of a pair of lines (L.sub.B and L.sub.BN) which are coupled to respective load elements (14.sub.B and 14.sub.BN) to provide a pair of complementary signals (V.sub.B and V.sub.BN).

Abstract: A protection device (14) for an integrated circuit (12) created on a semiconductor body (24 and 26) utilizes one or more semiconductor diodes (D.sub.L and/or D.sub.H) that have subsurface PN junctions (46 and/or 56) for preventing high-magnitude voltages, such as those generated by electrostatic discharge, from damaging sensitive electronic elements of a protected circuit component (16) formed from part of the body. The device is fabricated by an epitaxial layer/double buried region process.

Abstract: A field-programmable logic architecture is centered on a single array of programmable gates that perform either logical NAND or logical NOR operations. Foldback loops can be readily programmed through the array to enable the user to achieve different numbers of logic levels.

Abstract: During the deposition of a metallic layer on an N-type semiconductive region to form a Schottky diode in a structure placed in a highly evacuated chamber, at least one selected gas is introduced into the chamber to control the forward voltage across the diode.

Abstract: A structure for an electrical interconnection suitable for a semiconductor integrated circuit is made by a process utilizing selective tungsten deposition at low pressure to form an intermediate conductive layer without significantly ablating nearby insulating material.

Abstract: A semiconductor device contains first and second semiconductive regions (43 and 78) and first, second, and third semiconductive zones (59/61, 79, and 71) of opposite conductivity type to the regions. The first zone adjoins an insulating layer (45/46/47/48/63) along an upper surface of the first region. The second region extends to the upper surface through a window in the insulating layer. The second zone adjoins the second region below the window and is spaced apart from the third zone which extends to the upper surface. The zones and insulating layer upwardly and laterally enclose the second region. A first segment (59) of the first zone is continuous with the third zone and at least partly adjoins the lateral edge of the insulating layer located apart from the window.

Abstract: A bipolar gate has an output transistor (Q5) that switches in response to the voltage at an emitter of a drive transistor (Q2 or Q10). An active pull-off circuit (14) discharges the base of the output transistor (Q5) when it turns off. The discharge path is provided through a pull-off transistor (Q7) whose collector is coupled to the base of the output transistor. The switching of the pull-off transistor is regulated with a control circuit containing a trigger circuit and a bias circuit. The trigger circuit is coupled between the bias circuit and a collector of the drive transistor. A "kicker" circuit formed with an input transistor (QC1) and a voltage reference (18) speeds up the switching of the drive transistor.

Abstract: A sample and hold circuit contains a pair of differential amplifiers (A1 and A2) switchably arranged in series. The circiut input signal (V.sub.IN) during sample is provided to the first amplifier (A1) which is coupled to a storage capacitor (C). The second amplifier (A2) provides the circuit output signal (V.sub.OUT) during hold. Switching circuitry (S1, S2, and S3) enables the input and output signals to undergo the same transfer function in the first amplifier. The voltage offset of the first amplifier is thereby cancelled out of the output signal, while the effect of the voltage offset of the second amplifier is reduced drastically so as to provide excellent auto-zeroing.

Abstract: A bipolar input circuit for regulating the current/voltage level at the base of a switching transistor (QA) provides a capacitively-controlled discharge path from the base through a discharge transistor (QC) when an input signal (V.sub.I) makes certain voltage transitions. The base of the switching transistor responds to the voltage at an emitter (E1) of an input transistor (QB) which has another emitter (E2) coupled to the base of the discharge transistor. Its base is further coupled to a capacitor (C) which controls the discharge path.

Abstract: A bipolar signal translator contains a pair of transistors (Q1 and Q2) arranged as a current mirror with their emitters coupled to a voltage supply (V.sub.EE) by way of a pair of impedance elements (R4 and R5) that improve stability. Their collectors are coupled through another pair of impedance elements (R1 and R2) to an input transistor (Q4 or Q5) and to a device circuit (D1 and D2, D3 and D4, or Q4). The collector of one of the current-mirror transistors (Q2) is coupled to the base of an output transistor (Q3) whose collector is preferably coupled through an output impedance element (R3) to a current-control transistor (Q6) that improves power utilization.