Abstract: The operability of the connecting sockets of a kinescope aging line is verified by applying the aging voltages through ammeters. The current plots are side-by-side whereby low current plots for both voltages indicate an empty carrier while a low current for only one of the plots indicates a defective socket.

Abstract: A system for measuring the average area of apertures in an opaque member scans a large number of lines across the apertures in orthogonal directions. The width of two apertures are measured to obtain an average width. The lengths of two apertures are measured to obtain an average length. The average width and length are multiplied to obtain an average area. The width and length measurements are not necessarily from the same two apertures within the member.

Abstract: A UHF broadcast antenna system uses circular waveguide for the run from the high-power final amplifier to the antenna. Undesired cross-polarization components are formed in the circular waveguide due to unavoidable tolerances. Correction of the cross-polarization components is accomplished by a correction apparatus for sampling the principal polarization-plane signal, and reinjecting the sample with controlled amplitude and phase into the circular waveguide in the plane of the cross-polarization component for cancelling the cross-polarization.

Abstract: A switch arrangement for providing access commands to a computer includes a plurality of switches categorized into three groups. The first group is exclusive or whereby only one of the switches within the group can access the computer at a given time. The second group is prioritized whereby the switches within the group access the computer in accordance with an assigned priority. The third group is random whereby any or all of the switches can access the computer at a given time.

Abstract: A system for providing a security code to a computer includes security bit input logic for each bit of the security code. The input logic includes a plurality of output lines whereby the security bit can be provided on any combination of the output lines selected. Output line selection logic selects the output line over which the bit is provided. The input logic is sequentially scanned whereby the security bits are sequentially provided to the computer.

Abstract: A system for measuring the black matrix on the faceplate of a color television picture tube provides measurements of the matrix line widths, the transparent space widths and the periods of the color barwidths formed by the lines and spaces.

Abstract: A workpiece loader includes a processing tray having two parallel sets of substantially V-shaped grooves adjacent a surface thereof, the grooves of one set alternating with and having a depth greater than the depth of the grooves of the other set. The workpiece loader further comprises an aligning tray having a plurality of substantially V-shaped grooves adjacent a surface thereof and parallel to each other, the grooves of the aligning tray having a depth greater than the depth of the grooves of the other set and having a periodicity equal to the periodicity of the grooves of the other set, the aligning and processing trays being positioned in tandem so that the grooves of the other set are aligned with the grooves of the aligning tray.

Abstract: A gas drying system for use in removing a liquid from a substrate comprises a carrier adapted to support the substrate wherein the parts of the carrier that make contact with the substrate have a surface wettable by the liquid and the wettable surface has a roughened surface of a material that is capable of being hydroxylated, and a dryer for exposing the substrate to a stream of ambient-temperature gas.

Abstract: A method of fabricating a low-resistivity polycrystalline silicon film deposited on a substrate comprises the steps of doping the polycrystalline silicon film with boron in situ while depositing the film, to a concentration greater than 1.times.10.sup.20 atoms/cm.sup.3, and then irradiating the film with a laser pulse. The present method may be utilized to fabricate a polycrystalline silicon film having a relatively small temperature coefficient of resistivity by electrically connecting a first irradiated part of the film with a second non-irradiated part in a manner allowing the two parts, having different temperature coefficients of resistivity, to compensate each other.

Abstract: A method of passivating a silicon semiconductor device having at least one active component disposed in a crystalline region thereof comprises the steps of bombarding a surface of the crystalline region with ions to convert a part of the region adjacent the surface into an amorphous layer of graded crystallinity, and then exposing the amorphous layer to atomic hydrogen, whereby an integral layer of hydrogenated amorphous silicon is formed adjacent the crystalline region.

Abstract: A method of optically testing electrical parameters of a surface of a semiconductor including carrier mobility and recombination time is disclosed which includes the step of irradiating the surface with a first beam of monochromatic light having a wavelength less than the wavelength corresponding to the band-gap energy of the semiconductor, resulting in the excitation of electrons and holes at the semiconductor surface. The surface is simultaneously irradiated with a second beam of monochromatic light having a wavelength larger than the wavelength corresponding to the band-gap energy of the semiconductor, whereby part of the second beam is reflected from the surface. The intensity of this reflected beam is measured and the magnitude thereof is a measure of the carrier mobility and recombination time at the semiconductor surface.

Abstract: A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

Abstract: A method of optically testing the lateral dimensions of a pattern of material disposed on a substrate comprises applying the material to both the main area of the substrate and a test area on the same substrate, and selectively removing the material from both areas on the substrate simultaneously to form respectively the pattern on the main area and a diffraction grating on the test area. The diffraction grating is exposed to a beam of light, and the intensity of two of the diffracted beams is measured to obtain a ratio signal (I.sub.2 /I.sub.1), which is then utilized to determine the lateral dimensional tolerance of the integrated circuit pattern.

Abstract: An integrated injection logic (I.sup.2 L) device includes at least two gate structures. Each gate structure includes a first region of one type conductivity with an injector region and a base region of the opposite type conductivity disposed therein adjacent a surface thereof. A second region of the opposite type conductivity is disposed in each gate structure adjacent the surface of the first region between the injector and base region. The second regions are electrically-floating regions free of any contact electrode.

Abstract: A method of reducing the resistivity of a doped polycrystalline silicon film deposited on a substrate comprises the step of irradiating the film with a laser pulse having an energy density of less than about 1.5 joules per square centimeter.

Abstract: A method of chemically vapor-depositing a low-stress glass layer onto a substrate which is heated in an atmosphere including silane, oxygen, and an inert carrier gas, comprises the step of adding water vapor to the atmosphere to increase the water vapor content of the atmosphere substantially above that normally present therein from the oxidation of the silane.

Abstract: A method of optically measuring the concentration of carriers in a doped region of a semiconductor wafer includes the step of selectively introducing conductivity modifiers into both the wafer and a test substrate simultaneously to form respectively the doped region in the wafer and a diffraction grating pattern in the substrate including periodically-spaced doped strips. The diffraction grating pattern is exposed to a beam of monochromatic light, and the intensity of one of the diffracted beams is measured, whereby the magnitude thereof is a measure of the carrier concentration in the doped region.

Abstract: An improved bipolar transistor including an emitter region having a relatively high-impurity-concentration portion separated from the base region of the transistor by a significantly lower-impurity-concentration portion disposed therebetween comprises a graded impurity concentration in the low-impurity-concentration portion with the lowest-impurity-concentration section thereof being disposed adjacent the base region.

Abstract: A method of manufacturing a semiconductor device having a passivating overcoat of insulating material disposed thereover comprises treating the overcoat with a silane solution prior to encapsulating the device.

Abstract: A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.