Abstract: The invention provides processes for producing a very low dislocation density in heterogeneous epitaxial layers with a wide range of thicknesses, including a thickness compatible with conventional silicon CMOS processing. In a process for reducing dislocation density in a semiconductor material formed as an epitaxial layer upon a dissimilar substrate material, the epitaxial layer and the substrate are heated at a heating temperature that is less than about a characteristic temperature of melting of the epitaxial layer but greater than about a temperature above which the epitaxial layer is characterized by plasticity, for a first time duration. Then the epitaxial layer and the substrate are cooled at a cooling temperature that is lower than the about the heating temperature, for a second time duration. These heating and cooling steps are carried out a selected number of cycles to reduce the dislocation density of the epitaxial layer.

Abstract: There is provided an imaging system including a MOS pixel array having a number, r, of rows of pixels. Each pixel of the array includes a light detecting element, a reset node connected to the light detecting element for controlling dissipation of photogenerated charge produced by the light detecting element, and a sense node connected to the light detecting element for measuring photogenerated charge produced by the light detecting element. A charge control voltage generation circuit is provided, having a topology for producing a plurality of charge control voltages selected to control dissipation of photogenerated charge produced by the light detecting element, in accordance with a corresponding pixel transfer function. A switch circuit is connected to the voltage generation circuit and to the pixel array to apply voltages produced by the charge control voltage generation circuit to reset nodes of pixels.

Abstract: The invention provides a garment including a torso portion of an extent sufficient to encircle a garment wearer's torso and arm openings provided in the torso portion. Generally vertical and cooperating front torso portion edges are included, providing a vertical front closure of the torso portion. At least one opening in the torso portion is provided. This garment opening is of an extent that is sufficient to accommodate passage of a fluidic tube and a corresponding fluidic receptacle through the opening and to accommodate positioning of at least one fluidic tube to extend from the through the garment opening. At least one fluidic receptacle support is located on an outside surface of the torso portion. The fluidic receptacle support has a receptacle support surface below a point at which a corresponding fluidic tube would be positioned to extend through a corresponding garment opening.

Abstract: Provided are integrator circuit topologies that enable continuous integration without reset of the integrator circuit. One such integrator circuit includes a first integrator and a second integrator, each of the two integrators having a non-inverting terminal. Each of the non-inverting terminals is connected to an input node to alternately receive an input current for continuous integrator circuit integration without integrator circuit reset. The inverting terminal of the second integrator can be connected to an inverting terminal of the first integrator. The non-inverting terminal of the second integrator can be connected to an output of the first integrator through a first capacitor, and an output of the second integrator can be connected to a non-inverting terminal of the first integrator through a second capacitor.

Abstract: Provided is a force-controlled hydro-elastic actuator, including a hydraulic actuator, having a connection to hydraulic fluid and including a mechanical displacement member positioned to be mechanically displaced by fluid flow at the actuator. A valve is connected at the hydraulic actuator connection and has a port for input and output of fluid to and from the valve. At least one elastic element is provided in series with the mechanical displacement member of the hydraulic actuator and is positioned to deliver, to a load, force generated by the hydraulic actuator. A transducer is positioned to measure a physical parameter indicative of the force delivered by the elastic element and to generate a corresponding transducer signal. A force controller is connected between the transducer and the valve to control the valve, based on the transducer signal, for correspondingly actuating the hydraulic actuator and deflecting the elastic element.

Abstract: There is provided a water-hydrocarbon mixture. In one example, the mixture includes low-molecular weight hydrocarbon and between about 5% and about 70% water. The mixture is in the gaseous state, and is at a pressure that is below the critical pressure of the mixture. The mixture temperature is above about 28° C. less than the boiling point temperature of water at the mixture pressure and is below about 450° C. The mixture provides a local environment of water molecules, tending to limit hydrocarbon polymerization and other undesirable side reactions and keeping the hydrocarbon from precipitating from the mixture, for a faster, more complete combustion cycle characterized by lower emissions of carbon monoxide, unburned hydrocarbons, and volatile organic and polyaromatic hydrocarbons. The hydrocarbon preferably includes hydrocarbon micro-droplets of a diameter of no more than about 1 &mgr;m.

Abstract: A CCD imaging system is provided, including a short focal length lens for accepting light from the scene to be imaged and a charge storage medium having a charge storage substrate that is curved in a selected nonplanar focal surface profile and located a selected distance from the lens with the focal surface facing the lens, the focal surface profile and the lens-to-substrate distance selected such that the light accepted by the lens is in focus at the position of the substrate. There is provided a support substrate on which the nonplanar charge storage substrate is supported to maintain the selected surface profile of the charge storage substrate.

Abstract: An endoscopic catheter distal end position control that enables precise control of distal catheter sheath ends relative to each other while accommodating the long length and flexibility of typical catheters and proximal, remote hand-operable control mechanisms. In a catheter assembly employing this control, an elongated flexible tubular sheath is provided having a distal end and a proximal end. A distal end member is internal to the sheath; this end member is reciprocally axially moveable relative to the sheath distal end between a retracted position that is proximal of the sheath distal end and an extended position in which the end member protrudes beyond the sheath distal end. An elongated end member interconnector is provided, with a distal end of the interconnector being connected to the end member and a proximal end of the interconnector being connected to a position actuator for axially reciprocating the end member relative to the distal end of the sheath.

Abstract: There is provided controlled fabrication of a solid state structural feature on a solid state structure by exposing the structure to a fabrication process environment the conditions of which are selected to produce a prespecified feature in the structure. A physical detection species is directed toward a designated structure location during process environment exposure of the structure, and the detection species is detected in a trajectory from traversal of the designated structure location, to indicate changing physical dimensions of the prespecified feature. The fabrication process environment is then controlled in response to the physical species detection to fabricate the structural feature.

Abstract: In a method for bonding a silicon substrate to a III-V material substrate, a silicon substrate is contacted together with a III-V material substrate and the contacted substrates are annealed at a first temperature that is above ambient temperature, e.g., at a temperature of between about 150° C. and about 350° C. The silicon substrate is then thinned. This bonding process enables the fabrication of thick, strain-sensitive and defect-sensitive optoelectronic devices on the optimum substrate for such, namely, a thick III-V material substrate, while enabling the fabrication of silicon electronic devices in a thin silicon layer, resulting from the thinned Si substrate, that is sufficient for such fabrication but which has been thinned to eliminate thermally-induced stress in both the Si and III-V materials. The III-V material substrate thickness thereby provides the physical strength of the composite substrate structure, while the thinned silicon substrate minimizes stress in the composite structure.

Abstract: The invention provides processes for bonding a flip chip to a substrate in a manner that maximizes reliability of the bonding operation. Electrically conductive polymer bumps are formed on bond pads of a flip chip and the flip chip polymer bumps are at least partially hardened. Electrically conductive polymer bumps are formed on bond pads of a substrate, and a layer of electrically insulating adhesive paste is then applied on the substrate, covering the substrate polymer bumps with the adhesive. The bond pads of the flip chip are then aligned with the bond pads of the substrate and the at least partially hardened flip chip polymer bumps are then pushed through the substrate adhesive and at least partially into the substrate polymer bumps. In a further method, electrically conductive polymer bumps are formed on bond pads of a flip chip and the flip chip polymer bumps are at least partially hardened.

Abstract: Provided is a method for producing a silicon element. A substrate configuration is provided that includes a silicon layer having a first face and a thickness corresponding to a specified thickness of the silicon element to be formed. The configuration includes a layer of an electrically-insulating material located below and adjacent to the silicon layer. A substantially vertical trench is etched from the first face in the silicon layer to a depth that exposes the insulating layer. Then the trench in the silicon layer is exposed to a gaseous environment that is reactive with silicon, to substantially lateral etch the silicon layer preferentially at the depth of the insulating layer along a surface of the insulating layer. This lateral etch is continued for a duration that results in release of a silicon element over the insulating layer. Also provided is a process for etching an angled trench in a silicon layer.

Abstract: The invention overcomes limitations of conventional power and thermodynamic sources by with micromachinery components that enable production of significant power and efficient operation of thermodynamic systems in the millimeter and micron regime to meet the efficiency, mobility, modularity, weight, and cost requirements of many modern applications. A micromachine of the invention has a rotor disk journalled for rotation in a stationary structure by a journal bearing. A plurality of radial flow rotor blades, substantially untapered in height, are disposed on a first rotor disk face, and an electrically conducting region is disposed on a rotor disk face. A plurality of stator electrodes that are electrically interconnected to define multiple electrical stator phases are disposed on a wall of the stationary structure located opposite the electrically conducting region of the rotor disk.

Abstract: An apparatus includes a switching circuit, an integrator circuit having an input for receiving a first signal from the switching circuit, a sensing circuit having an input for receiving a second signal from the integrator circuit, and a control circuit having an input for receiving a third signal from the sensing circuit and an output for sending a fourth signal to the switching circuit. In certain applications, the integrator circuit includes a first integrator and a second integrator having an inverting terminal connected to an inverting terminal of the first integrator. The second integrator also includes a non-inverting terminal connected to an output of the first integrator through a first capacitor, and an output connected to a non-inverting terminal of the first integrator through a second capacitor.

Abstract: The invention provides processes for producing a high-quality silicon dioxide layer on a germanium layer. In one example process, a layer of silicon is deposited on the germanium layer, and the silicon layer is exposed to dry oxygen gas at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. In a further example process, the silicon layer is exposed to water vapor at a temperature that is sufficient to induce oxidation of the silicon layer substantially only by thermal energy. It can be preferred that the exposure to dry oxygen gas or to water vapor be carried out in an oxidation chamber at a chamber pressure that is no less than ambient pressure. In one example, the chamber pressure is above about 2 atm. The temperature at which the silicon layer is exposed to the dry oxygen gas is preferably above about 500° C., more preferably above about 600° C., even more preferably above about 700° C., and most preferably above about 800° C.

Abstract: Provided is a blooming control structure for an imager and a corresponding fabrication method. The structure is produced in a semiconductor substrate in which is configured an electrical charge collection region. The electrical charge collection region is configured to accumulate electrical charge that is photogenerated in the substrate, up to a characteristic charge collection capacity. A blooming drain region is configured in the substrate laterally spaced from the charge collection region. The blooming drain region includes an extended path of a conductivity type and level that are selected for conducting charge in excess of the characteristic charge collection capacity away from the charge collection region. A blooming barrier region is configured in the substrate to be adjacent to and laterally spacing the charge collection and blooming drain regions by a blooming barrier width. This barrier width corresponds to an acute blooming barrier impurity implantation angle with the substrate.

Abstract: There is provided an electrostatically-controllable actuator having a stationary electrode, with an actuating element separated from the stationary electrode by an actuation gap. The actuating element includes a mechanically constrained support region, a deflection region free to be deflected through the actuation gap, and a conducting actuation region extending from about the support region to the deflection region. A commonality in area between the actuation region and the stationary electrode is selected to produce controlled and stable displacement of the deflection region over a displacement range, e.g., extending to a specified point in the actuation gap, when an actuation voltage is applied between the actuation region and the stationary electrode. This range of stable displacement, which can be stable bending, can extend to a point greater than about ⅓ of the actuation gap, or even through the full actuation gap.

Abstract: There is provided a water-hydrocarbon mixture. In one example, the mixture includes liquid hydrocarbon and between about 5% and about 70% water. The mixture is at a pressure that is below the critical pressure characteristic of the mixture and is at a temperature that is at least the greater of about 250° C. and about the boiling point temperature of water at the mixture pressure. The mixture provides a local environment of water molecules, tending to limit hydrocarbon polymerization and other undesirable side reactions and keeping the hydrocarbon from precipitating from the mixture. This provides for a faster, more complete combustion cycle that is characterized by lower emissions of carbon monoxide, unburned hydrocarbons, and volatile organic and polyaromatic hydrocarbons. The hydrocarbon preferably includes hydrocarbon micro-droplets of a diameter of no more than about 1 &mgr;m.

Abstract: The invention provides a scheme for combusting a hydrocarbon fuel to generate and extract enhanced translational energy. In the scheme, hydrocarbon fuel is nanopartitioned into nanometric fuel regions each having a diameter less than about 1000 angstroms; and either before or after the nanopartitioning, the fuel is introduced into a combustion chamber. In the combustion chamber, a shock wave excitation of at least about 50,000 psi and with an excitation rise time of less than about 100 nanoseconds is applied to the fuel. A fuel partitioned into such nanometric quantum confinement regions enables a quantum mechanical condition in which translational energy modes of the fuel are amplified, whereby the average energy of the translational energy mode levels is higher than it would be for a macro-sized, unpartitioned fuel. Combustion of such a nanopartitioned fuel provides enhanced translational energy extraction by way of, e.g.

Abstract: In a flip chip bonding method, polymer bumps are formed, using a bonding tool, on an IC chip, held via suction to the bonding tool. An insulating adhesive film is pressed onto the upper surface of a circuit board held via suction with a suction stage. Heat is then applied to bring the film into close contact with bond pads of the circuit board. At this point, the bonding tool is moved downward, bonding the polymer bumps to the circuit board electrodes. During the time of this downward movement, bonding of the polymer bumps to the circuit board bond pads can be achieved by piercing the insulating adhesive film with the polymer bumps, and it is found that strong bonding can be achieved with adequate reliability. This method eliminates the need for a process in which through-holes must be pierced in the insulating adhesive film to accommodate the polymer bumps.