Abstract: A surface particle sampling head having a rotatable probe The sampling head contains a handle, a probe and a joint connecting the handle to the probe such that the probe rotates relative to the handle. Preferably, the rotatable joint is a universal joint that enables the probe to gimbal relative to the handle. The probe further contains a manifold having a releasably attached face plate.

Abstract: A hybrid Johnsen-Rahbek chuck that provides a combination of both Coulombic and Johnsen-Rahbek chucking mechanisms. More specifically, the chuck contains a plurality of dielectric mesas deposited upon particular regions of the support surface of a chuck. The body of the chuck is generally fabricated from a Johnsen-Rahbek semiconducting dielectric. The mesas are formed from a thin film deposition of a highly-resistive dielectric. Consequently, the thin, highly resistive film prevents excess DC standby current as well as reduces the dependence of the electrostatic chuck performance on the wafer backside morphology and composition.

Abstract: Method and apparatus for retaining a semiconductor wafer upon a pedestal within semiconductor wafer processing equipment. An electrostatic chuck contains a wafer support having a surface. Embedded beneath the surface is a number of electrodes defining a number of chucking zones. The electrodes are energized by a number of non-zero voltages thereby creating a variable, non-zero chucking force in each of the chucking zones. The method of retaining a substrate to a substrate support consists of biasing at least one of the electrodes with a first voltage of a first magnitude and biasing each previously unbiased electrode with a voltage of unequal magnitude of the initially biased electrode and every other previously unbiased electrode such that a non-zero chucking force exists in every zone. Wafer chucking zones of differing force improve uniformity of heat transfer gas layer distribution.

Abstract: Apparatus for sputtering magnetic target material using a magnetic field shunt within a moving magnet sputtering source. The apparatus includes a magnetic field shunt that is embedded into the target material along the path of the moving magnet assembly at a location where a deep erosion trench is created by the assembly in the target material. The magnetic field shunt provides an alternate path for the magnetic flux that is liberated by the erosion of the target. Alternatively, the magnetic field shunt is physically attached to the magnetic pole piece such that the magnetic shunt moves with the pole piece along the track that the pole piece is moved.

Abstract: Apparatus for directly measuring the value of a component within an RF circuit (e.g., an RF matching network within a semiconductor wafer processing system). Specifically, the apparatus applies a low frequency signal (e.g., a 1 KHz) across one or more of the components within an RF circuit using a bridge circuit that is sufficiently isolated from the RF signal to accomplish accurate measurements of the component. The apparatus monitors the amplitude of the low frequency signal across the component. The amplitude of the low frequency signal is indicative of the value of the component.

Abstract: A method and apparatus for conditioning a surface of a ceramic body in a process chamber when the process chamber has a vacuum pump, an anode and a cathode. The conditioning method consists of pumping the process chamber down to a vacuum with the vacuum pump, introducing a gas into the chamber, energizing the anode and cathode with RF power to ignite the gas into a plasma, sputter etching the surface with ions from the plasma to remove contaminants therefrom. The method is accomplished either within a process chamber to condition, in situ, a ceramic chuck or within a cleaning chamber to condition any form of ceramic body or component.

Abstract: Apparatus for retaining a workpiece in a semiconductor wafer processing system. The apparatus has a collector positioned between an electrostatic chuck pedestal and the floor of the processing chamber. The collector has inlet and exhaust control valves connected to inlet and exhaust ports for providing and expelling a backside heat transfer gas (e.g., Helium). Heat transfer exhaust cavities in the collector are connected to the exhaust port to rapidly draw the gas off the backside of the wafer. Additionally, control of the heat transfer gas layer uniformity during processing is achieved by opening and closing the valves to the inlet and exhaust ports as required.

Abstract: A cover layer, and method of fabricating the same, for covering a support surface of a workpiece support. More specifically, the cover layer contains a plurality of conductive pads and an insulating material coating. The insulating material coating covers substantially the entire surface of the chuck; however, a top surface of each conductive pad is exposed through the coating. The cover layer maintains a wafer, or other workpiece, in a spaced apart relation to the support surface of the chuck. The distance between the underside surface of the wafer and the chuck is defined by the thickness of conductive pads in the cover layer. The plurality of conductive pads create a plurality of conductive paths from the wafer to the surface of the chuck such that the insulating material layer does not interfere with the Johnsen-Rahbek effect that electrostatically retains the wafer on the chuck.

Abstract: A susceptor with improved resistance to thermal cycling and chemical attack between processing and cleaning cycles. The susceptor comprises a top surface is surrounded by a lip, the lip having a beveled inner side, a top side, an outer side, a first rounded edge between the top side and the outer side, a second rounded edge between the top side and the inner side, and a third rounded edge between the inner side and the top surface. The susceptor comprises a body of graphite covered by a coating of aluminum nitride.

Abstract: In a clamping device of a machine tool, a washer member moves slidingly on a pair of bodies along the longitudinal groove and further advances toward a fastening bolt. A fastening nut is assembled to the fastening bolt to clamp the workpiece. Moreover, a lower surface of the other end of clamping member is supported by the sloped portion of a height adjustment member.

Abstract: A method for improving the characteristics of deposited thin films by improved control and stabilization of wafer surface temperatures. Further, the invention provides the ability to rapidly change the temperature of the wafer surface without the need to change the temperature of the chamber. The wafer is heated to an operating temperature by conventional means. A gas with high thermal conductivity, such as helium or hydrogen, is passed over the wafer to cool its surface to a desired temperature for the process to be performed. The flow rate is then adjusted to stabilize the temperature of the wafer and reduce surface temperature variations. Processing gases are then introduced into the chamber, and deposition onto the wafer commences. The maintenance of correct wafer surface temperature results in improved step coverage and conformality of the deposited film.

Abstract: A controllable slide car for controllably simulating oversteer and understeer conditions in a moving automobile. The controllable slide car comprises a rear steering linkage assembly that attaches to the rear wheel mounting assemblies of an automobile and a controller for controllably steering the rear steering linkage assembly. The controller is powered by the battery of the automobile and manually controlled by a control unit to steer the rear wheel mounting assemblies.

Abstract: Means for producing reciprocatory movement of a vice carrier (18) across a guideway (17) mounted on a body moulding (11, 16), which partly shrouds a rotatably driven grinding wheel (14), comprise a rack moulding (57) having upper and lower racks (61, 62) which are alternately engaged by a pinion (44) driven from the grinding wheel drive, in use. Rack moulding movement is transmitted to the vice carrier and spring means (67, 68) move the rack moulding to change the pinion engagement from the lower rack to the upper rack and vice versa at the ends of the racks, thereby reversing the rack moulding movement. A guide peg (56) of the body moulding alternately engages in upper and lower slots (65a, 65b) of the rack moulding to maintain the pinion in engagement with its appropriate associated rack while it is between the ends thereof. The arrangement is intended for use as part of a releasable adapter for a powered grinding tool incorporating said grinding wheel.

Abstract: A method of initializing or reconstructing data redundancy within a array of storage elements. Specifically, the method is performed by the array management software, either as part of the array controller or a host computer performing array controller functions, such that, for a new array, the data therein is made consistent (e.g., XOR consistent using parity data) and, for an array with a recently replaced storage element, data is reconstructed within the new storage element. In either case, after executing the inventive routine, the array is fault tolerant and the data is consistent in accordance with the technique used to generate fault tolerance.

Abstract: A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and a deposition ring. The deposition ring removably rests upon a flange extending from the outer periphery of a substrate support pedestal. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.

Abstract: Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.