Patents Represented by Law Firm Townsend, Snider & Banta
  • Patent number: 5262338
    Abstract: A semiconductor device of the MOS construction such that a gate oxide film of the device has a gate area in the range of from 5 to 15 mm.sup.2 and a thickness in the range of from 15 to 40 nm and the oxide film dielectric breakdown voltage is not less than 8 MV/cm when a gate current caused to flow in response to application of a direct-current voltage between a phosphorus-doped polysilicon electrode formed on the oxide film and a silicon single crystal substrate increases past 1 .mu.A/mm.sup.2 as current density is obtained by using a silicon wafer substrate having an oxygen concentration of not more than 1.times.10.sup.18 atoms/cm.sup.3.
    Type: Grant
    Filed: March 13, 1992
    Date of Patent: November 16, 1993
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Izumi Fusegawa, Hirotoshi Yamagishi, Nobuyoshi Fujimaki, Yukio Karasawa
  • Patent number: 5262809
    Abstract: A camera accommodates a main lamp for electronic flashing and an auxiliary lamp for preventing a red-eye phenomenon.The auxiliary lamp for preventing a red-eye phenomenon is directly held by a holder composed of a material of a color having a light reflecting effect such as white. Since the holder also function as a reflecting plate, the structure of the camera is simplified. A transparent cover is integrally provided with at least a finder window, an electronic flash lamp window at which the main lamp for electronic flashing is disposed, and an auxiliary lamp window at which the auxiliary lamp is disposed. The transparent cover is attached to the camera as a part of a case, thereby simplifying the structure of the camera. The auxiliary lamp is preferably disposed in the area between the lens barrel at the central portion and the main lamp. Thus, the arrangement of parts in the camera avoiding waste is realized.
    Type: Grant
    Filed: May 28, 1992
    Date of Patent: November 16, 1993
    Assignee: Fuji Photo Optical Co., Ltd.
    Inventors: Syunji Nishimura, Minoru Takahashi
  • Patent number: 5259997
    Abstract: An apparatus is provided for manufacturing carbonated water rapidly with a high rate of inclusion of carbonic acid gas in the carbonated water and having a reduced dispersion, the manufacture taking place in a water storage container in which a perforated bowl is connected to an upper surface thereof with water being sprayed into the bowl from a water supply line. The water sprayed into the bowl has droplets from about 0.01 to 0.5 mm in diameter and from about 3 to 30% of the water sprayed into the bowl flows outwardly through ports in the bottom wall of the perforated bowl. From about 70 to 97% by weight of the water supplied to the bowl flows outward through ports in the side walls of the bowl.
    Type: Grant
    Filed: March 3, 1993
    Date of Patent: November 9, 1993
    Assignee: Sanyo Electric Co., Ltd.
    Inventor: Yasuo Kazuma
  • Patent number: 5251419
    Abstract: A method and apparatus is provided for forming a stone-paved floor. A flexible frame structure is formed from a plurality of connector bars linked to one another through pivotable joints at the ends thereof. Connector bars are coupled in a crossed configuration at center portions thereof to form a plurality of enclosures into which paving stones are fitted.
    Type: Grant
    Filed: September 24, 1992
    Date of Patent: October 12, 1993
    Assignee: Incorporated Company Ohtsuka
    Inventor: Nobuhiko Ohtsuka
  • Patent number: 5247179
    Abstract: A target irradiating device including a magnetic force generating member for electrically generating a magnetic force; a power supplying member for supplying a driving power to the magnetic force generating member; a control member for controlling the power supplying member so that a voltage signal for periodically changing an intensity of the magnetic force is supplied from the power supplying member, the voltage signal having a lowering pattern in one cycle such that a bottom point of voltage maintained at a constant level; and an irradiating member for irradiating the magnetic force generated by the magnetic force generating member to a desired target. The target irradiating device may be adapted to a water treatment device for treating water as the desired target to obtain an irradiated water.
    Type: Grant
    Filed: October 17, 1991
    Date of Patent: September 21, 1993
    Inventor: Hiroshi Tachibana
  • Patent number: 5239835
    Abstract: The present inventions are intended to improve heat efficiency of a refrigeration system having plural refrigerating cycles of different evaporating or condensing temperatures typically used in breweries. Each of main lines of different evaporating temperatures are connected with each of suction lines to a compressor respectively, to enable the system to save energy and to establish a back-up system of compressors. A different condensing temperature system having a common refrigerant source is provided with refrigerant transferring means to transfer refrigerant from an refrigerant excess cycle to an refrigerant insufficiency cycle.
    Type: Grant
    Filed: April 21, 1992
    Date of Patent: August 31, 1993
    Assignees: Asahi Breweries, Ltd., Mayekawa Mfg. Co., Ltd.
    Inventors: Masaru Kitaguchi, Shigeru Sakashita
  • Patent number: 5239032
    Abstract: A heterofunctional macromer represented by the formula: ##STR1## in which R.sub.1 is H or C.sub.1 -C.sub.4 alkyl; R.sub.2 is a (poly) lactone or (poly) ether chain; X.sub.1 is --COO--, --COOCH.sub.2 CH.sub.2 OCO--, --CONHCOO--, --COOCH.sub.2 CH.sub.2 NH--COO-- or ##STR2## X.sub.2 is --O--, --COO-- or --OCO--NH--R.sub.3 --NHCOO-- group; R.sub.3 is C.sub.1 -C.sub.6 alkylene, aromatic or alicyclic group; A is --CH.sub.2 --, --C(CH.sub.3).sub.2 -- or ##STR3## and reactive polymers derived from said macromer.
    Type: Grant
    Filed: December 29, 1992
    Date of Patent: August 24, 1993
    Assignee: Nippon Paint Co., Ltd.
    Inventors: Mitsuo Yamada, Kei Aoki
  • Patent number: 5239031
    Abstract: A heterofunctional macromer represented by the formula: ##STR1## in which R.sub.1 is H or C.sub.1 -C.sub.4 alkyl; R.sub.2 is a (poly) lactone or (poly) ether chain; X.sub.1 is --COO--, --COOCH.sub.2 CH.sub.2 OCO--, --CONHCOO--, --COOCH.sub.2 CH.sub.2 NH--COO-- ##STR2## X.sub.2 is --O--, --COO-- or --OCO--NH--R.sub.3 --NHCOO--group; R.sub.3 is C.sub.1 -C.sub.6 alkylene, aromatic or alicyclic group; A is --CH.sub.2 --, --C(CH.sub.3).sub.2 -- or ##STR3## and reactive polymers derived from said macromer.
    Type: Grant
    Filed: December 29, 1992
    Date of Patent: August 24, 1993
    Assignee: Nippon Paint Co., Ltd.
    Inventors: Mitsuo Yamada, Kei Aoki
  • Patent number: 5238875
    Abstract: This invention provides a bonded wafer of the n/n.sup.+ or p/p.sup.+ step junction or the SOI configuration possessing an outstanding getter effect by bonding two wafers thereby forming a n/n.sup.+ or p/p.sup.+ stage junction or a SOI configuration and, prior to the bonding, incorporating in one of the wafer surfaces an oxidation-induced stacking fault capable of producing a gettering effect. When a semiconductor device is produced by forming necessary components on the second semiconductor wafer surface side of the bonded wafer of this invention, therefore, the leak current across the pn junction of the semiconductor device is decreased, the life time of the carrier is improved, and the yield of the semiconductor device is notably enhanced without reference to the discrimination between the MOS type and the bipolar type.
    Type: Grant
    Filed: September 4, 1991
    Date of Patent: August 24, 1993
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventor: Nobuyoshi Ogino
  • Patent number: 5232870
    Abstract: A bonded wafer enjoying high strength of bonding of component wafers thereof is produced by a method which comprises causing the surfaces for mutual attachment of two semiconductor wafers to be irradiated with an ultraviolet light in an atmosphere of oxygen immediately before the two semiconductor wafers are joined to each other. One of the two semiconductor wafers to be used for the bonded wafer optionally has an oxide film formed on one surface thereof. One of the component wafers of the bonded wafer is optionally polished until the component wafer is reduced to a thin film.
    Type: Grant
    Filed: September 4, 1991
    Date of Patent: August 3, 1993
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Tatsuo Ito, Yasuaki Nakazato
  • Patent number: 5227421
    Abstract: A resin having both an acidic and a basic functional group is dissolved in an aqueous medium by neutralizing the acidic functional group with a basic compound and a pigment is dispersed in the aqueous medium by the action of the resin. To improve the dispersibility of the pigment and dispersion stability and coated film performance, a pK.sub.b value of the basic functional group of the resin is equal to or less than a pK.sub.b value of the basic compound.
    Type: Grant
    Filed: November 2, 1992
    Date of Patent: July 13, 1993
    Assignee: Nippon Paint Co., Ltd.
    Inventors: Hiroyuki Kageyama, Toshikatsu Kobayashi, Shouji Ikeda
  • Patent number: 5225960
    Abstract: Disclosed is a ceramic capacitor of a mono-layer structure or a multi-layer structure, which has characteristic X7R (characteristic B) and which is high in reliability in direct current breakdown voltage at 125.degree. C. and small in size. The ceramic capacitor has a dielectric layer and internal electrodes disposed so as to interpose the dielectric layer. The dielectric layer is composed of a sintered body of ceramic particles whose core sections are made mainly of BaTiO.sub.3 and whose shell sections are made from BaTiO.sub.3 in the form of a solid solution composed of an oxide of one or more than one element selected from Mg, Ca, Sr and Zn and an oxide of one or more than one element selected from Sc, Y, Gd, Dy, Ho, Er, Yb, Tb, Tm and Lu.
    Type: Grant
    Filed: March 16, 1992
    Date of Patent: July 6, 1993
    Assignee: Taiyo Yuden Kabushikigaisha
    Inventors: Hiroshi Kishi, Hiroshi Saito, Hisamitsu Shizuno, Yuji Nishi, Katsuhiko Arai
  • Patent number: 5225583
    Abstract: Alkyl-aryl 1,3-propanedione silicone derivative characterized in that said derivative is siloxane having at least one unit expressed by the general formula 1 as shown below and other unit which can exist in said siloxane is expressed by a general formula of O.sub.4-r/2 SiR.sup.5.sub.r, and an external preparation for skin with said derivative compounded therein. ##STR1## Herein; R.sup.1 : A hydroxyl group, an alkyl group having 1 to 8 carbon atoms, or an alkoxy group having 1 to 8 carbon atomsR.sup.2 : An alkyl group having 1 to 7 carbon atomsR.sup.3 : A bivalent alkylene group or an oxyalkylene group having at least 2 carbon atomsR.sup.4, R.sup.5 : An alkyl group, a phenyl group, or a trimethylsiloxy group having 1 to 4 carbon atomsm: An integer from 0 to 3p: 0 or 1q,r: An integer from 0 to 3.)An excellent UV-A absorbing capability and compatibility with a silicone-based base are provided.
    Type: Grant
    Filed: August 13, 1992
    Date of Patent: July 6, 1993
    Assignee: Shiseido Co., Ltd.
    Inventors: Tomomi Okazaki, Kenichi Umishio, Keiichi Uehara
  • Patent number: 5223080
    Abstract: A method for controlling the thickness of a single crystal thin-film silicon layer bonded on a dielectric substrate in a SOI substrate thereby effecting conversion of said single crystal silicon layer to a thin film is disclosed. To be more precise, said method comprises selectively and hypothetically dividing the entire surface of said single crystal silicon layer destined to undergo a chemical vapor-phase corrosion reaction for the sake of said conversion into necessary minute sections and, at the sametime, taking preparatory measurement of the thickness of said single crystal silicon layer in each of said minute sections, and effecting on each of said minute sections said conversion to a thin film by a chemical vapor-phase corrosion reaction adjusted in accordance with the measured thickness of layer. The conversion to a thin film is attained with the dispersion of thickness of the single crystal silicon layer controlled with high accuracy.
    Type: Grant
    Filed: November 27, 1991
    Date of Patent: June 29, 1993
    Assignee: Shin-Etsu Handotai Co., Ltd.
    Inventors: Yutaka Ohta, Masatake Katayama, Takao Abe, Yasuaki Nakazato
  • Patent number: 5218470
    Abstract: A stereoviewer for observing a stereo pair of photographs three-dimensionally through binocular lenses is shown and described. The stereoviewer comprises a box-shaped main body case having a space for accommodating stereoscopic photographs; a lid for covering the main body case; holder portions provided on one side surface of the box-shaped main body case so as to position and hold the stereoscopic photographs in a non-perpendicular standing state; and binocular lenses provided thereon are inclined in such a manner that the binocular lenses face the vertical center portion of the stereoscopic photographs. This stereoviewer also serves as a package and has a simple structure. The thickness of the binocular lenses are varied so that the focal distance is different between the upper portion and the lower portion of said binocular lenses and the binocular lenses are decentered outwardly in the horizontal direction.
    Type: Grant
    Filed: December 26, 1991
    Date of Patent: June 8, 1993
    Assignee: Fuji Photo Optical Co., Ltd.
    Inventors: Shigeo Mizukawa, Tsuneo Yokoyama
  • Patent number: 5213657
    Abstract: A Si single crystal thin film is classified according to the thickness into several areas such that the areas where the thin film is thicker is made oxide layer-free and the areas where the thin film is thinner is covered with oxide layer. Then, oxidation is conducted so that the thicker the thin film the lower the Si interface becomes, utilizing the different growth rates of the oxide layer in these areas. The thin film surface with a resulting staircase configuration is then leveled by the subsequent polishing treatment. In other method, oxide layer is formed in such way that the areas with a thicker thin film thickness will have a thinner oxide layer and the areas with a thinner thin film thickness will have a thicker oxide layer, and oxidation is conducted such that the thicker the thin film the lower the Si interface becomes.
    Type: Grant
    Filed: July 29, 1992
    Date of Patent: May 25, 1993
    Assignee: Shin-Etsu Handotai Kabushiki Kaisha
    Inventors: Takao Abe, Yasuaki Nakazato, Atsuo Uchiyama
  • Patent number: 5212252
    Abstract: A room-temperature curable resin composition comprising (a) an acrylic polymer having a plurality of alicyclic epoxide functions, and (b) an amount effective to initiate the curing reaction at room-temperature of the acrylic polymer (a) of a proton-donating cation polymerization initiator. The composition finds its uses in coating compositions, sealants, potting and casting compositions.
    Type: Grant
    Filed: November 14, 1991
    Date of Patent: May 18, 1993
    Assignee: Nippon Paint Co., Ltd.
    Inventors: Kei Aoki, Tadafumi Miyazono, Hirohiko Mori
  • Patent number: 5212243
    Abstract: A powder coating which is specifically useful for the containing of electric appliance, office appliance and the like and is excellent, inter alia, stain resistance of the formed coating is provided, the powder coating comprising (a) a base resin having a reactive functional group, (b) a hardener having in its molecule 2 or more functional groups which are reactive with the functional group of the base resin and (c) an acrylic resin containing 40 100 % by weight of the total of the constituting monomers of t-butyl acrylate and/or t-butyl methacrylate.
    Type: Grant
    Filed: June 5, 1992
    Date of Patent: May 18, 1993
    Assignee: Nippon Paint Co., Ltd.
    Inventors: Yuji Toyoda, Akimitsu Uenaka, Hideki Ichimura, Tasaburo Uneo, Koichi Tsutsui
  • Patent number: 5209995
    Abstract: A zinc alkaline cell is formed by using an anode active material which contains a non-amalgamated zinc alloy powder having a bulk specific gravity ranging from approximately 2.90 to 3.50 (grams per cm.sup.3) and containing a predetermined amount of indium coated on a surface of the non-amalgamated zinc alloy powder containing a predetermined amount of aluminum and/or a predetermined amount of calcium as a zinc alloy powder component, other than unavoidable impurities. The zinc alkaline cell can achieve corrosive resistance and discharge performance as a cell and it is comparable with cells formed by using amalgamated zinc alloy powder which has been practically employed.
    Type: Grant
    Filed: August 21, 1991
    Date of Patent: May 11, 1993
    Assignees: Sanyo-Denki Kabushikigaisha, Sanyo-Ekuseru Kabushikigaisha, Toho-Aen Kanushikigaisha
    Inventors: Kinya Tada, Masaaki Kurimura, Mutsumi Yano, Eiichiro Mieno, Wataru Sekiguchi, Junzo Nakagawa, Takanori Akazawa
  • Patent number: 5204221
    Abstract: Disclosed is a photosensitive resin composition which has improved water developability and storage stability. The composition comprises(I) crosslinked resin particles prepared by a post-emulsion method from(a) a base resin having a glass transition temperature (Tg) of 0.degree. C. or less and a polymerizable double bond,(b) a monomer which, when polymerized, provides a resin in which Tg is 20.degree. C. higher than that of the base resin, or a resin in which Tg is 20.degree. C. higher than that of the base resin,(c) a polyvinyl compound, and(d) a polymerization initiator(II) a photopolymerizable unsaturated monomer, and(III) a photopolymerization initiator.
    Type: Grant
    Filed: January 31, 1991
    Date of Patent: April 20, 1993
    Assignee: Nippon Paint Co., Ltd.
    Inventors: Hisaichi Muramoto, Yusuke Ninomiya, Keizou Ishii, Shinichi Ishikura