Abstract: Disclosed is an improved process of the post-emulsion method capable of forming crosslinked resin particles which do not have fusion bonds between particles and which have good storage stability and good redispersibility in an aqueous medium. The process comprises (a) dispersing in an aqueous medium a resinous component comprising (I) a base resin having a glass transition temperature (Tg) of 0.degree. C. or less and a polymerizable double bond, (II) a monomer which, when polymerized, provides a resin of which Tg is 20.degree. C. higher than that of said base resin, or a resin of which Tg is 20.degree. C. higher than that of the base resin, and (III) a polyvinyl compound; (b) crosslinking inside the dispersed resin particles and; (c) removing the aqueous medium therefrom.

Abstract: A zinc alkaline cell is formed by using an anode active material which contains a non-amalgamated zinc alloy powder having a bulk specific gravity ranging from approximately 2.90 to 3.50 (grams per cm.sup.3) and containing a predetermined amount of indium coated on a surface of the non-amalgamated zinc alloy powder containing a predetermined amount of lead or a predetermined amount of a mixture of lead with bismuth or aluminum as a zinc alloy powder component, other than unavoidable impurities. The zinc alkaline cell can achieve corrosive resistance and discharge performance as a cell and it is comparable with cells formed by using amalgamated zinc alloy powder which has been practically employed.

Abstract: A heterofunctional macromer represented by the formula: ##STR1## in which R.sub.1 is H or C.sub.1 -C.sub.4 alkyl; R.sub.2 is a (poly) lactone or (poly) ether chain;X.sub.1 is --COO--, --COOCH.sub.2 CH.sub.2 OCO--, --CONHCOO--, --COOCH.sub.2 CH.sub.2 NH--COO-- or ##STR2## X.sub.2 is --O--, --COO-- or --OCO--NH--R.sub.3 --NHCOO-- group; R.sub.3 is C.sub.1 -C.sub.6 alkylene, aromatic or alicyclic group;A is --CH.sub.2 --, --C(CH.sub.3).sub.2 -- or ##STR3## group; and reactive polymers derived from said macromer.

Abstract: Single crystal silicon islands in a dielectric-separation substrate are separated completely and finished in a uniform thickness by preparatorily denuding a single crystal silicon substrate of a warpage suffered to occur therein.This dielectric-separation substrate is produced by a method which comprises forming a thermal oxide film on a single crystal silicon substrate having grooves incised in advance therein, then forming an irreversibly thermally shrinkable film on the rear surface of said single crystal silicon substrate prior to depositing a polycrystalline silicon thereon, then depositing a polycrystalline silicon on said single crystal silicon substrate, and thereafter grinding said single crystal silicon substrate in conjunction with said irreversibly thermally shrinkable film.

Abstract: A backing pad be used in a holding jig for holding a semiconductor wafer in the step of mirror polishing comprises a hydrophobic foam, possessed rigidity such that the difference between the thickness T.sub.1, thereof under a load of 300 gf/cm.sup.2 and the thickness, T.sub.2, thereof under a load of 1,800 gf/cm.sup.2 (T.sub.1 -T.sub.2) is in the range of from 1 to 100 .mu.m, and has holes formed therein in a diameter in the range of 10 to 30 .mu.m through the wafer-holding surface thereof.The polishing of a semiconductor is effected by a method which comprises preparing a finished backing pad by the precision surface machining operation, setting the semiconductor wafer on a wafer holding jig having a template containing at least one wafer-positioning hole fixed on a carrier plate in such a manner that the backing pad enters the positioning hole, and polishing the semiconductor wafer.