Abstract: Optimized scanning for EPG data in the streams is provided by performing interim scans based on user data. The user data is gathered based on services accessed by one or more users of the device. The streams are then ranked according to the data and a scan threshold of a subset of streams to scan is defined. A interim scan occurs on a subset of streams up to the threshold streams after a first time interval after which scanning may end.

Abstract: A storage device with a memory, a controller, a storage device interface and a host interface, and a method of data transfer to and from a storage device are provided. The storage device is operative to connect with a host device and the storage device interface is operative to couple with an add-on memory. When the host interface is connected to a host device, the controller is configured to receive a data transfer command specifying a memory address from the host interface; and if the memory address is beyond the address space of the memory, to route the data transfer command to the storage device interface for access to the add-on memory. The address space of the memory and an address space of the add-on memory are addressed as one integral address space transparently to the host.

Abstract: A method for fabricating a 3-D monolithic memory device in which a via and trench are etched using an amorphous carbon hard mask. The via extends in multiple levels of the device as a multi-level vertical interconnect. The trench extends laterally, such as to provide a word line or bit line for memory cells, or to provide other routing paths. A dual damascene process can be used in which the via is formed first and the trench is formed second, or the trench is formed first and the via is formed second. The technique is particularly suitable for deep via applications, such as for via depths of greater than 1 ?m. A dielectric antireflective coating, optionally with a bottom antireflective coating, can be used to etch an amorphous carbon layer to provide the amorphous carbon hard mask.

Abstract: Data stored in memory is decoded using iterative probabilistic decoding and multiple decoders. A first decoder attempts to decode a representation of a codeword. If the attempt is unsuccessful, a second decoder attempts to decode the representation of a codeword. The second decoder may have a lower resolution than the first decoder. Probability values such as logarithmic likelihood ratio (LLR) values may be clipped in the second decoder. This approach can overcome trapping sets while exhibiting low complexity and high performance. Further, it can be implemented on existing decoders such as those used in current memory devices.

Abstract: Programmatic root cause analysis of application performance problems is provided in accordance with various embodiments. Transactions having multiple components can be monitored to determine if they are exceeding a threshold for their execution time. Monitoring the transactions can include instrumenting one or more applications to gather component level information. For transactions exceeding a threshold, the data collected for the individual components can be analyzed to automatically diagnose the potential cause of the performance problem. Time-series analytical techniques are employed to determine normal values for transaction and component execution times. The values can be dynamic or static. Deviations from these normal values can be detected and reported as a possible cause. Other filters in addition to or in place of execution times for transactions and components can also be used.

Abstract: A semiconductor die and a low profile semiconductor package formed therefrom are disclosed. The semiconductor package may include at least first and second stacked semiconductor die mounted to a substrate. The first and/or second semiconductor die may be fabricated with localized cavities through a bottom surface of the semiconductor die, along a side edge of the semiconductor die. The one or more localized cavities in a side take up less than the entire side. Thus, the localized cavities allow low height stacking of semiconductor die while providing each die with a high degree of structural integrity to prevent cracking or breaking of the die edge during fabrication.

Abstract: A multimedia entertainment system combines both gestures and voice commands to provide an enhanced control scheme. A user's body position or motion may be recognized as a gesture, and may be used to provide context to recognize user generated sounds, such as speech input. Likewise, speech input may be recognized as a voice command, and may be used to provide context to recognize a body position or motion as a gesture. Weights may be assigned to the inputs to facilitate processing. When a gesture is recognized, a limited set of voice commands associated with the recognized gesture are loaded for use. Further, additional sets of voice commands may be structured in a hierarchical manner such that speaking a voice command from one set of voice commands leads to the system loading a next set of voice commands.

Abstract: A method and apparatus for adjusting the performance of a memory system is provided. A memory system comprises a master device and a slave device. A memory channel couples the master device to the slave device such that the slave device receives the system operating information from the master device via the memory channel. The slave device further includes tuning circuitry within the slave device such that the performance of the memory system is improved.

Abstract: A storage device with a memory, a controller, a storage device interface and a host interface, and a method of data transfer to and from a storage device are provided. The storage device is operative to connect with a host device and the storage device interface is operative to couple with an add-on memory. When the host interface is connected to a host device, the controller is configured to receive a data transfer command specifying a memory address from the host interface; and if the memory address is beyond the address space of the memory, to route the data transfer command to the storage device interface for access to the add-on memory. The address space of the memory and an address space of the add-on memory are addressed as one integral address space transparently to the host.

Abstract: An interface allows navigation of a hierarchy of related content organized into a node tree. Each node may be associated with media content and navigation input may be received to navigate between the nodes. The interface includes a mechanism for viewing graphical data representing related content within the node tree. A user may provide input to navigate between nodes in the same hierarchy level or different hierarchy levels while graphical data for the selected node is provided in the interface.

Abstract: Multiple programming processes are performed for a plurality of non-volatile storage elements. Each of the programming processes operate to program at least a subset of the non-volatile storage elements to a respective set of target conditions using program pulses. At least a subset of the programming processes include identifying a program pulse associated with achieving a particular result for a respective programming process and performing one or more sensing operations at one or more alternative results for the non-volatile storage elements. Subsequent programming process are adjusted based on a first alternative result and the identification of the program pulse if the one or more sensing operations determined that greater than a predetermined number of non-volatile storage elements achieved the first alternative result.

Abstract: Semiconductor devices are provided with encapsulating films for protection of sidewall features during fabrication processes, such as etching to form isolation regions. In a non-volatile flash memory, for example, a trench isolation process is divided into segments to incorporate an encapsulating film along the sidewalls of charge storage material. A pattern is formed over the layer stack followed by etching the charge storage material to form strips elongated in the column direction across the substrate, with a layer of tunnel dielectric material therebetween. Before etching the substrate, an encapsulating film is formed along the sidewalls of the strips of charge storage material. The encapsulating film can protect the sidewalls of the charge storage material during subsequent cleaning, oxidation and etch processes. In another example, the encapsulating film is simultaneously formed while etching to form strips of charge storage material and the isolation trenches.

Abstract: A modular and scalable power source can be used to supplement an existing source of power. In one embodiment, a DC source can be used to maintain a power source of a host system in a specific state in order to cause a desired behavior.

Abstract: A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures.

Abstract: A method and system for forming reversible resistivity-switching elements is described herein. Forming refers to reducing the resistance of the reversible resistivity-switching element, and is generally understood to refer to reducing the resistance for the first time. Prior to forming the reversible resistivity-switching element it may be in a high-resistance state. A first voltage is applied to “partially form” the reversible resistivity-switching element. The first voltage has a first polarity. Partially forming the reversible resistivity-switching element lowers the resistance of the reversible resistivity-switching element. A second voltage that has the opposite polarity as the first is then applied to the reversible resistivity-switching element. Application of the second voltage may further lower the resistance of the reversible resistivity-switching element. Therefore, the second voltage could be considered as completing the forming of the reversible resistivity-switching element.

Abstract: Techniques for enhancing the use of a motion capture system are provided. A motion capture system tracks movement and audio inputs from a person in a physical space, and provides the inputs to an application, which displays a virtual space on a display. Bodily movements can be used to define traits of an avatar in the virtual space. The person can be directed to perform the movements by a coaching avatar, or visual or audio cues in the virtual space. The application can respond to the detected movements and voice commands or voice volume of the person to define avatar traits and initiate pre-scripted audio-visual events in the virtual space to provide an entertaining experience. A performance in the virtual space can be captured and played back with automatic modifications, such as alterations to the avatar's voice or appearance, or modifications made by another person.

Abstract: A prefabricated shearwall including a central diaphragm having a height generally defined by top and bottom edges, and a width generally defined by a pair of end sections. The diaphragm further includes at least one corrugation extending in the height direction at least partially between the top and bottom edges. The corrugation increases the ductility and ability of the shearwall to withstand lateral forces such as those generated in earthquakes, high winds, floods and snow loads.

Abstract: A method of forming a semiconductor package is disclosed including disguising the test pads. Test pads are defined in the conductive pattern of the semiconductor package for allowing electrical test of the completed package. The test pads are formed in shapes such as letters or objects so that they are less recognizable as test pads.

Abstract: To program a set of non-volatile storage elements, a set of programming pulses are applied to the control gates (or other terminals) of the non-volatile storage elements. The programming pulses have pulse widths that vary as a function of simulated pulse magnitude data. The programming pulses can also have pulse magnitudes that vary based on measurements taken while testing the set of non-volatile storage elements. In one embodiment, the pulse widths are determined after simulation performed prior to fabrication of the non-volatile storage elements. In another embodiment, the pulse magnitudes are calculated after fabrication of the non-volatile storage elements.

Abstract: To detect movement of a depth camera in a motion capture system, readings from an accelerometer in the depth camera are processed to provide short and long term moving averages for each of the x, y and z axes. For each axis, a difference between the short and long term averages is obtained. A sum of the differences is obtained by summing the absolute value of each difference, across all three axes. This sum of differences is then compared to a threshold to determine if movement is detected. In another approach, the short and long term averages of the accelerometer readings are converted to pitch and roll values, and the pitch and roll values are separately compared to a threshold to determine if movement is detected. A tracking algorithm can be temporarily halted while movement is detected. Readings in the vertical direction can be attenuated by a scaling factor.