Abstract: An optical communication module comprises a plurality of monolithic semiconductor transmitter photonic integrated circuit (TxPIC) chips each having a plurality of optical signal channels approximating wavelengths on a standardized grid. Each of the channels comprises a laser source optically coupled to an electro-optic modulator. The outputs of the electro-optic modulators are coupled to inputs of an optical combiner integrated on each of the chips for combining the inputs to form a combined signal output from the chip. A second optical combiner combines the combined signal outputs from the TxPICs to form a combined optical signal group output. A booster optical amplifier is optically coupled to the second optical combiner to receive and amplify the combined optical signal group output from the second optical combiner.

Abstract: Disclosed is a method of in-wafer testing of integrated optical components and in-wafer chips with photonic integrated circuits (PICs).

Abstract: In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality of semiconductor layers are formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III-V compound, i.e., an Al-III-V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III-V layer.

Abstract: An optical-to-electrical-to-optical converter comprises a monolithic receiver photonic integrated circuit (RxPIC) InP-based chip comprising an optical waveguide formed in the chip from a chip input to receive a first multiplexed channel signal from an optical link and provide them to an arrayed waveguide grating (AWG) which demultiplexes the multiplexed channel signals and provides a plurality of electrical channel signals to an electronic regenerator. The regenerator regenerates the electrical channel signals to an original signal waveform and provides the reformed electrical signals to a monolithic transmitter photonic integrated circuit (TxPIC) InP-based chip having an array of modulated sources formed in the chip that are coupled as inputs to an arrayed waveguide grating (AWG). The TxPIC modulates the reformed electrical signals to form a plurality of optical channel sign which are combined to form a second first multiplexed channel signal for transmission on an optical link.

Abstract: A method is disclosed for monitoring and controlling the bit error rate (BER) in an optical communication network where an optical receiver in the optical transmission network is a monolithic photonic integrated circuit (RxPIC) chip. The method includes the steps of decombining on-chip a combined channel signal received from the network and then monitoring a real time bit error rate (BER) of a decombined channel signal. The determined BER is then communicated, such as through an optical service channel (OSC) to an optical transmitter source that is the source of origin of the channel signal. Based upon the determined BER, the chirp of a channel signal modulator at the optical transmitter source that generated the monitored channel signal is adjusted by, for example, adjusting its bias. The same channel signal received at the RxPIC chip can be monitored again to determine if an acceptable level for the BER has been achieved by the previous chirp adjustment.

Abstract: Photonic integrated circuits (PICs), also referred to as opto-electronic integrated circuits (OEICs), and more particularly to a PIC in the form of an optical receiver PIC or RxPIC chip and an optical transmitter PIC (TxPIC) are employed in an optical transport network. Integrated on the RxPIC chip, starting at the input end which is coupled to receive multiplexed optical data signals from an optical transport network is an optical amplifier, an optical demultiplexer, and a plurality of on-chip photodiodes (PDs) each to receive a demultiplexed data signal from the AWG DEMUX for optical-to-electrical signal conversion. The optical input amplifier may be an on-chip gain clamped semiconductor optical amplifier (GC-SOA) or an off-chip fiber amplifier. The optical input amplifier may be optional if the channel signal demultiplexer provides for minimal insertion loss which is optimum with a properly designed arrayed waveguide grating (AWG) demultiplexer.

Abstract: A FEC enhanced system for an optical transport or communication network that includes an optical transmitter that has a transmitter photonic integrated circuit (TxPIC) chip having an integrated circuit comprising an array of modulated sources providing a plurality of optical modulated channel signals comprising digital bit data streams where each signal is at a wavelength on a wavelength grid. The modulated channel signal outputs from the modulated sources are provided to an integrated multiplexer in the circuit to provide a WDM output signal at a circuit output. At least one FEC encoder is coupled to the modulated sources to encode error-correcting code containing redundant information of the data bit stream for each channel signal. An optical receiver in the network includes a receiver photonic integrated circuit (RxPIC) chip having an integrated circuit comprising an input to a demultiplexer and an array of photodetectors coupled to outputs of the demultiplexer.

Abstract: Disclosed is a method of adjusting a center channel wavelength of a group of channel wavelengths from of a plurality of modulated sources, integrated in a photonic integrated circuit (PIC), relative to the center of a wavelength passband of an optical combiner, such as an arrayed waveguide array (AWG), also integrated in the photonic integrated circuit (PIC) and optically coupled to outputs from the modulated sources.

Abstract: An optical transmitter comprises a monolithic transmitter photonic integrated circuit (TxPIC) chip that includes an array of modulated sources formed on the PIC chip and having different operating wavelengths approximating a standardized wavelength grid and providing signal outputs of different wavelengths. A wavelength selective combiner is formed on the PIC chip having a wavelength grid passband response approximating the wavelength grid of the standardized wavelength grid. The signal outputs of the modulated sources optically coupled to inputs of the wavelength selective combiner to produce a combined signal output from the combiner. A first wavelength tuning element coupled to each of the modulated sources and a second wavelength tuning element coupled to the wavelength selective combiner. A wavelength monitoring unit is coupled to the wavelength selective combiner to sample the combined signal output.

Abstract: A method of operating an array of integrated laser sources formed as an integrated array on a single substrate in a photonic integrated circuit (PIC) where the laser sources are designed for operation at different targeted emission wavelengths which, in toto, at least approximate a grid of spatial emission wavelengths. A first wavelength tuning element is associated with each laser source and is adjusted over time so that each laser source maintains its targeted emission wavelength. As an alternative, the drive current to each laser source may be initially set so that each laser source operates at its targeted emission wavelength. Thereafter, adjustments to retune the laser sources to their targeted emission wavelengths are accomplished by the first wavelength tuning elements. The outputs of the laser sources may be combined via an optical combiner to produce a single combined output from the PIC.

Abstract: An active semiconductor device, such as, buried heterostructure semiconductor lasers, LEDs, modulators, photodiodes, heterojunction bipolar transistors, field effect transistors or other active devices, comprise a plurality of semiconductor layers formed on a substrate with one of the layers being an active region. A current channel is formed through this active region defined by current blocking layers formed on adjacent sides of a designated active region channel where the blocking layers substantially confine the current through the channel. The blocking layers are characterized by being an aluminum-containing Group III–V compound, i.e., an Al-III–V layer, intentionally doped with oxygen from an oxide source. Also, wet oxide process or a deposited oxide source may be used to laterally form a native oxide of the Al-III–V layer. An example of a material system for this invention useful at optical telecommunication wavelengths is InGaAsP/InP where the Al-III–V layer comprises InAlAs:O or InAlAs:O:Fe.

Abstract: A wider window margin in an eye diagram for an optical transmission signal is provided for both threshold and phase (timing).

Abstract: A monolithic transmitter photonic integrated circuit (TxPIC) chip comprises an array of modulated sources formed on the PIC chip and having different operating wavelengths according to a standardized wavelength grid and providing signal outputs of different wavelengths. Pluralities of wavelength tuning elements are integrated on the chip, one associated with each of the modulated sources. An optical combiner is formed on the PIC chip and the signal outputs of the modulated sources are optically coupled to one or more inputs of the optical combiner and provided as a combined channel signal output from the combiner. The wavelength tuning elements provide for tuning the operating wavelength of the respective modulated sources to be approximate or to be chirped to the standardized wavelength grid. The wavelength tuning elements are temperature changing elements, current and voltage changing elements or bandgap changing elements.

Abstract: A method of tuning optical components integrated on a monolithic chip, such as an optical transmitter photonic integrated circuit (TxPIC), is disclosed where a group of first optical components are each fabricated to have an operating wavelength approximating a wavelength on a standardized or predetermined wavelength grid and are each included with a local wavelength tuning component also integrated in the chip. Each of the first optical components is wavelength tuned through their local wavelength tuning component to achieve a closer wavelength response that approximates their wavelength on the wavelength grid.

Abstract: A method and apparatus operates an array of laser sources as an integrated array on a single substrate or as integrated in an optical transmitter photonic integrated circuit (TxPIC) maintaining the emission wavelengths of such integrated laser sources at their targeted emission wavelengths or at least to more approximate their desired respective emission wavelengths. Wavelength changing elements may accompany the laser sources to bring about the change in their operational or emission wavelength to be corrected to or toward the desired or target emission wavelength. The wavelength changing elements may be comprise of temperature changing elements, current and voltage changing elements or bandgap changing elements.

Abstract: An optical probe and a method for testing an optical chip or device, such as an photonic integrated circuit (PIC), to provide for testing of such devices or circuits while they are still in their in-wafer form and is accomplished by using a an optical probe for interrogation of the circuit where an access is provided in the wafer to one or more of such in-wafer devices or circuits. As one example, the interrogation may be an interrogation beam provided at the access input to the in-wafer device or circuit. As another example, the interrogation may be an optical pickup from the access input to the in-wafer device or circuit.

Abstract: A method of operating an array of laser sources integrated as an array in a single monolithic chip where the steps include designing the laser sources to have different target emission wavelengths so that together they form a spectral emission wavelength grid, coupling outputs from the laser sources to an array of gain/loss elements also integrated on the single monolithic chip, one each receiving the output from a respective laser source; and adjusting the outputs with the gain/loss elements so that the power levels across the laser source array are substantially uniform.

Abstract: A photonic integrated circuit (PIC) comprises a plurality of integrated optically coupled components formed in a surface of the PIC and a passivating layer overlies at least a portion of the PIC surface. The overlying passivating layer comprises a material selected from the group consisting of BCB, ZnS and ZnSe. Also, when the circuits are PIC chips are die in the semiconductor wafer, a plurality of linear cleave streets are formed in a wafer passivation layer where a pattern of the cleave streets define separate PIC chips in the wafer for their subsequent singulation from the wafer.

Abstract: The Group III–V quaternary, InAlGaAs is employed as a waveguide layer in optical components, such as In-P based array waveguide gratings (AWGs), avalanche photodiodes (APDs) or other optical components that contain a waveguide core in the InP regime. The deployment of InAlGaAs waveguides provides for high uniform photoluminescent (PL) emission wavelength across the wafer for InAlGaAs waveguides as compared to InGaAsP waveguides as now commonly employed in such optical devices or components. The use of an InAlGaAs waveguide core has particular utility when deployed in a photonic integrated circuit (PIC) such as an AWG with a plurality of outputs optically integrated with a plurality of photodetectors, such as APDs which are exemplified in this disclosure. In lieu of an InAlGaAs waveguide, combination layers of InGaAs/InAlAs, InGaAs/InAlGaAs or InAlAs/InAlGaAs may be employed or stacks of such layers to form the waveguides in the PIC chip.

Abstract: An InP-based photonic integrated circuit (PIC) includes an optical passive element in the circuit with no bias current applied to such an element. A passivation cladding layer overlies a surface of the optical passive element where the passivation layer comprises benzocyclobutene polymer or BCB.