Patents Represented by Attorney Wan Yee Cheung, Esq.

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  • Structure and method of controlling short-channel effect of very short channel MOSFET
    Patent number: 6653686
    Abstract: A semiconductor device comprising a gate having an approximately 0.05 &mgr;m channel length, an oxide layer below the gate, a self-aligned compensation implant below the oxide layer, a halo implant surrounding the self-aligned compensation implant below the oxide layer; and gate and drain regions on opposite sides of the halo implant and below the oxide layer.
    Type: Grant
    Filed: July 13, 1998
    Date of Patent: November 25, 2003
    Assignee: International Business Machines Corporation
    Inventor: Hsing-Jen Wann
  • High dielectric constant materials
    Patent number: 6653246
    Abstract: A method and structure for an integrated circuit structure that includes introducing precursors on a substrate, oxidizing the precursors and heating the precursors. The introducing and the oxidizing of the precursors is preformed in a manner so as to form an amorphous glass dielectric on the substrate. The process preferably includes, before introducing the precursors on the substrate, cleaning the substrate.
    Type: Grant
    Filed: January 8, 2003
    Date of Patent: November 25, 2003
    Assignee: International Business Machines Corporation
    Inventors: Michael P. Chudzik, Lawrence Clevenger, Louis L. Hsu, Deborah A. Neumayer, Joseph F. Shepard, Jr.