Abstract: A system and method of controlling/adjusting purge flow rate in an internal combustion engine is disclosed. The system includes an air intake assembly, a fuel tank assembly and an evaporative emissions control device such as a carbon canister in operational association with each other. Fuel vapors from the fuel tank assembly flow into the evaporative emissions control device for adsorption. The adsorbed fuel vapors from the evaporative emissions control device are recovered, at least in part due to pressure differentials, and actively purged into the internal combustion engine. The purge flow rate from the evaporative emissions control device is controlled/adjusted by a flow control device, the flow control device that is at least indirectly connected to the evaporative emissions control device and the air intake assembly. In one aspect, the flow control device can comprise an orifice device, such as, a connector device having at least one orifice for regulating purge flow rate.

Abstract: Methods for forming dielectric layers, and structures and devices resulting from such methods, and systems that incorporate the devices are provided. The invention provides an aluminum oxide/silicon oxide laminate film formed by sequentially exposing a substrate to an organoaluminum catalyst to form a monolayer over the surface, remote plasmas of oxygen and nitrogen to convert the organoaluminum layer to a porous aluminum oxide layer, and a silanol precursor to form a thick layer of silicon dioxide over the porous oxide layer. The process provides an increased rate of deposition of the silicon dioxide, with each cycle producing a thick layer of silicon dioxide of about 120 ? over the layer of porous aluminum oxide.

Abstract: The present invention relates to compositions and processes of making and using interpolymers having a controlled molecular weight distribution. Multilayer films and film layers derived from novel ethylene/?-olefin interpolymers are also disclosed.

Abstract: The invention is directed to a composition suitable for use in a single-sided stretch cling film, the composition having from 0.1 to 20 percent by weight of a propylene-based copolymer having substantially isotactic propylene sequences, and having from 80 to 99 percent by weight of an ethylene-based copolymer having a density of at least 0.905 g/cc, wherein a film made from the composition exhibits cling layer to release layer cling of at least 70 grams force per inch as measured by ASTM D-5458-95, noise levels of less than 87 dB during unwinding operations, and has a modulus of at least 3 MPA as determined by ASTM D-882.

Abstract: A stiffener molded to a semiconductor substrate, such as a lead frame, and methods of molding the stiffener to the substrate are provided. The stiffener is molded to the substrate to provide rigidity and support to the substrate. The stiffener material can comprise a polymeric material molded to the substrate by a molding technique such as transfer molding, injection molding, and spray molding, or using an encapsulating material. One or more dies, chips, or other semiconductor or microelectronic devices can be disposed on the substrate to form a die assembly. The stiffener can be molded to a substrate comprising one or more dies, over which an encapsulating material can be applied to produce a semiconductor die package.

Abstract: An industrial control system and method of controlling an industrial process are disclosed herein. In at least one embodiment, the control system includes an order system configured to receive an order from an external source and process the order to generate an order instance in accordance with an order ontology, at least one database storing a plurality of selectable generalized production plans and information identifying capabilities of a plurality of control entities, and a product agent in at least indirect communication with the order system, the at least one database and the control entities. The product agent receives at least one portion of the order instance, selects at least one of the generalized production plans, and communicates with the control entities so as to determine a production plan instance suitable for governing at least one aspect of an industrial process in order to satisfy at least one portion of the received order corresponding to the at least one portion of the order instance.

Abstract: An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute.

Abstract: An internal combustion engine and method of operating such an engine are disclosed. In some embodiments, the engine includes a piston provided within a cylinder, wherein a combustion chamber is defined within the cylinder at least in part by a face of the piston, and an intake valve within the cylinder capable of allowing access to the combustion chamber. The engine further includes a source of compressed air, where the source is external of the cylinder and is coupled to the cylinder by way of the intake valve, and where the piston does not ever operate so as to compress therewithin an amount of uncombusted fuel/air mixture, whereby the engine is capable of operating without a starter. In further embodiments, the piston is rigidly coupled to another, oppositely-orientated second piston, and the two pistons move in unison in response to combustion events to drive hydraulic fluid to a hydraulic motor.

Abstract: An all-polymer grating microstructure device that exhibits a zero-order reflection under white light comprises a first polymer having a first refractive index and configured as a microstructure embedded within a second polymer having a second refractive index, each of the polymers of the first and second polymers at least translucent to white light with the proviso that the refractive index of the first polymer is at least 0.05 greater than the refractive index of the second polymer.

Abstract: Two-layer receiver coatings particularly well adapted for use in inkjet printing comprise: A. A base layer comprising: 1. First pigment particles having (a) a number average particle size of 3-25 microns (?m), and (b) at least one of (i) an oil absorption value of at least 150 g oil/100 particles, and (ii) a pore volume of at least about 1.2 cubic meters per gram (cm3/g); and 2. Water-insoluble binder resin having a surface energy greater than 40 dyne per centimeter (dyn/cm); the first pigment particles and water-insoluble binder resin present at a weight ratio of 0.75 to 2; and B. An imaging layer comprising: 1. Second pigment particles having (a) a number average particle size of 0.01-4 (?m) aggregated to form an inter-particle region of submicron pores, and (b) a pore volume of 0.4 to 2.2 (cm3/g); and 2. Water-insoluble binder resin having a surface energy greater than 40 (dyn/cm); the second pigment particles and water-insoluble binder resin present at a weight ratio of 0.75 to 2.

Abstract: The invention provides a composition comprising the following: at least one olefin-based polymer, at least one halogenated ethylene-based polymer, or at least one elastomer rubber; at least one thermoplastic polyurethane; and at least one polydiene- or polydiol-based polyurethane. These compositions are well-suited for promoting the adhesion between polar (for example, polyester, polycarbonate and polylactic acid) and non-polar materials and for the manufacture of, among other things, films, fibers, sheets and tie layers, tubes, adhesives, dispersions, protective apparel, footwear, coatings, laminates and foams.

Abstract: Methods for forming ruthenium films and semiconductor devices such as capacitors that include the films are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microchannels utilizing an aqueous emulsion of an amphiphilic agent and a water-soluble, hydrogel-forming polymer, and films and devices formed from these methods are provided.

Abstract: Methods for fabricating sublithographic, nanoscale microstructures arrays including openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. In some embodiments, the films can be used as a template or mask to etch openings in an underlying material layer.

Abstract: A flexible film interposer for stacking a flip chip semiconductor die onto a second (bottom) semiconductor die, semiconductor devices and stacked die assemblies that incorporate the flexible film interposer, and methods of fabricating the devices and assemblies are provided. The incorporation of the flexible film interposer achieves densely packaged semiconductor devices, without the need for a redistribution layer (RDL).

Abstract: Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.

Abstract: A method for forming silicon nitride films on semiconductor devices is provided. In one embodiment of the method, a silicon-comprising substrate is first exposed to a mixture of dichlorosilane (DCS) and a nitrogen-comprising gas to deposit a thin silicon nitride seeding layer on the surface, and then exposed to a mixture of silicon tetrachloride (TCS) and a nitrogen comprising gas to deposit a TCS silicon nitride layer on the DCS seeding layer. In another embodiment, the method involves first nitridizing the surface of the silicon-comprising substrate prior to forming the DCS nitride seeding layer and the TCS nitride layer. The method achieves a TCS nitride layer having a sufficient thickness to eliminate bubbling and punch-through problems and provide high electrical performance regardless of the substrate type. Also provided are methods of forming a capacitor, and the resulting capacitor structures.