Patents Represented by Attorney William J. O'Brien
  • Patent number: 4767564
    Abstract: A chemical solution for effecting the rapid destruction of microfilm products comprising a mixture of 4-butyrolactone, methyl Cellosolve acetate and aqueous sodium hypochlorite.
    Type: Grant
    Filed: February 4, 1980
    Date of Patent: August 30, 1988
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Judith F. Kitchens, Carl H. Culp, Sr., Anthony T. Shemonski
  • Patent number: 4705639
    Abstract: The present invention involves a treatment technique for drastically reducing the volume of hazardous sludge generated by the chemical reduction of chromium contaminants and the precipitation of heavy metal contaminants from contaminated electroplating wastewater. The wastewater is first adjusted to a pH of from about 8 to 10 and then treated with sodium sulfide to provide sulfide ions to effect precipitation of heavy metal contaminants followed by treatment with ferrous sulfate or ferrous chloride to provide ferrous ions to chemically reduce the hexavalent chromium to its trivalent state. This method produces approximately one-fourth the sludge generated by the previously known acidic reaction treatment using only ferrous sulfide.
    Type: Grant
    Filed: May 10, 1985
    Date of Patent: November 10, 1987
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: James R. Aldrich
  • Patent number: 4701125
    Abstract: A method for the pyrolytic destruction of microfilm products by utilizing hot silicon oil heated to a temperature of about 250.degree. C. Destruction of the various types of microfilm is accomplished within a five minute time frame.
    Type: Grant
    Filed: June 10, 1980
    Date of Patent: October 20, 1987
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Judith F. Kitchens, Carl H. Culp, Sr., Raymond G. Hyde, Shirley G. Brownlee
  • Patent number: 4661176
    Abstract: The present invention accomplishes the thermal oxidation of the silicon side of the interface present in epitaxial silicon films grown on yttria-stabilized cubic zirconia, <Si>/<YSZ>, to form a dual-layer structure of <Si>/amorphous SiO.sub.2 /<YSZ>. The SiO.sub.2 films are formed in either dry oxygen (at 1100.degree. C.) or in pyrogenic steam (at 925.degree. C.) by the rapid diffusion of oxidizing species through a 425 .mu.m thick cubic zirconia substrate. For instance, a 0.17 .mu.m thick SiO.sub.2 layer is obtained after 100 min in pyrogenic steam at 925.degree. C. This relatively easy transport of oxidants is unique to YSZ and other insulators which are also superionic oxygen conductors, and cannot be achieved in other existing Si/insulator systems, such as silicon-on-sapphire.
    Type: Grant
    Filed: February 27, 1985
    Date of Patent: April 28, 1987
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Harold M. Manasevit
  • Patent number: 4615811
    Abstract: A novel treatment method for recovering halogenated vacuum pump oils such as chlorotrifluoroethylene, from contaminated filter papers. The process utilizes a trichlorotrifluoroethane (TCTFE) solvent and water mixture to extract the oil followed by vacuum distilling the resulting extractive.
    Type: Grant
    Filed: January 22, 1985
    Date of Patent: October 7, 1986
    Inventor: Lawrence J. Watkins
  • Patent number: 4602979
    Abstract: This invention describes a modified method of growing high purity, compositionally ungraded, single crystals of multicomponent solid solutions by the Czochralski, Kyropoulos, Bridgman or other related melt growth technique. In the method of this invention, the container or crucible used to contain the multicomponent crystal growing melt is fabricated from the higher melting point component of the multicomponent melt while lower melting point components are positioned within the crucible. The temperature of the crucible is then raised beyond the melting point of the lower melting point component to a temperature which is the exact melting point of the solid solution, or crystal alloy desired. This will dissolve an amount of the crucible material (higher melting point component) equal to the exact amount required to produce a solid solution having the desired composition.
    Type: Grant
    Filed: May 7, 1985
    Date of Patent: July 29, 1986
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Robert C. Marshall, John K. Kennedy, Charles S. Sahagian
  • Patent number: 4594430
    Abstract: Geminal dinitro compounds are prepared by reacting an organic nitro compound having a replaceable hydrogen on the carbon to which the nitro group is attached with a source of nitrite ions in the presence of an oxidizing agent and a catalytic amount of an alkali metal ferricyanide.
    Type: Grant
    Filed: January 31, 1985
    Date of Patent: June 10, 1986
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Vytautas Grakauskas, Lee C. Garver, Kurt Baum
  • Patent number: 4560779
    Abstract: The present invention provides a method for synthesizing a novel oxether-1 monomer by a two step reaction scheme which involves effecting a reaction between 3-methyl-3-hydroxymethyl oxetane and 1,1,1-trinitroethane to form an intermediate reaction product which in turn is reacted with methyl iodide to produce the oxether-1 monomer. The monomer is easily polymerized using conventional polymerization techniques to produce a poly(oxether-1) polyol useful as a binder component in smokeless propellants and explosives.
    Type: Grant
    Filed: July 20, 1982
    Date of Patent: December 24, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: John M. Guimont, Gerald E. Manser, Donald L. Ross
  • Patent number: 4559217
    Abstract: A method for producing highly pure indium for subsequent utilization as a reaction component in the synthesis of polycrystalline, indium phosphide which includes the step of heating raw indium under vacuum in an open ended quartz ampoule to a temperature in excess of 850.degree. C. followed by the step of sealing the ampoule while simultaneously maintaining said vacuum within the interior of the ampoule.
    Type: Grant
    Filed: November 1, 1983
    Date of Patent: December 17, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Joseph A. Adamski
  • Patent number: 4559175
    Abstract: This invention concerns itself with a novel class of dihalodiphospha-s-triazines as exemplified by the compound 1,3-bis[phenylchloro-phospha]-5-perfluoro-n-heptyl-2,4,6-triazines as well as their thio and azido substituted derivatives.
    Type: Grant
    Filed: April 19, 1984
    Date of Patent: December 17, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Kazimiera J. L. Paciorek, Reinhold H. Kratzer, David H. Harris, Mark E. Smythe, James H. Nakahara
  • Patent number: 4557869
    Abstract: This invention concerns itself with a class of novel dihalo-substituted monophospha-s-triazines as exemplified by the compounds 1-dichlorophospha-3,5-bis(perfluoro-n-heptyl)-2,4,6-triazine and 1-dichlorophospha-3,5-bis[C.sub.3 F.sub.7 OCF(CF.sub.3)CF.sub.2 OCF(CF.sub.3)]-2,4,6-triazine, as well as their thio and azido derivatives.
    Type: Grant
    Filed: April 19, 1984
    Date of Patent: December 10, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Kazimiera J. L. Paciorek, Reinhold H. Kratzer, David H. Harris, Mark E. Smythe, James H. Nakahara
  • Patent number: 4558451
    Abstract: A generating device for producing a laser energizing gas in the singlet delta, electronic state comprising a vacuum chamber; a tubular reaction chamber positioned within said vacuum chamber, said reaction chamber having a closed end and an oppositely disposed open end; means positioned in said closed end for introducing a flow of a gaseous reactant into said reaction chamber; means positioned adjacent said closed end at an angle perpendicular to the position of said gas introducing means for introducing a stream of a liquid reactant into said gas flow to effect a chemical reaction therebetween and the generation of a laser energizing, singlet delta gas; and means for interconnection to a lasing device for directing a flow of said generated, singlet delta gas to a lasing cavity.
    Type: Grant
    Filed: July 19, 1982
    Date of Patent: December 10, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: William E. McDermott, David E. Ellis, Nicholas R. Pchelkin, George W. Miller, David J. Benard, Ralph J. Richardson
  • Patent number: 4539292
    Abstract: Using monoclonal mouse anti-human IgE antibodies, the microtiter solid phase radioimmunoassay (MSPRIA) and the enzyme-linked immunoabsorbent assay (EILSA) were modified to quantitatively measure honeybee venom (HBV) and perennial rye grass (PRG) specific immunoglobulin E (sIgE). By using a novel dilution, serial transfer and cummulative counting technique, the inhibiting and interfering effects of specific immunoglobulin G (sIgG) in the assay of (sIgE) can be reduced and the quantitative determination of (sIgE) accomplished with precision and reliability.
    Type: Grant
    Filed: December 29, 1982
    Date of Patent: September 3, 1985
    Inventors: Michael J. Reid, J. Michael Kwasnicki, Nai-Kong V. Cheung
  • Patent number: 4508662
    Abstract: Pentafluorotellurium hypofluorite and pentafluorotellurium hypochlorite have been reacted with olefinic reactants to form fluorocarbon adducts containing the oxypentafluorotellurium group (TeF.sub.5 O--).
    Type: Grant
    Filed: March 24, 1983
    Date of Patent: April 2, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Carl J. Schack, Karl O. Christe
  • Patent number: 4504329
    Abstract: The present invention provides for the deposition of group III-V ternary epitaxial films onto the surfaces of suitable semiconductor substrates. The deposition is accomplished by a vapor phase epitaxy-hydride technique using a group III binary alloy as a group III metal source and phosphine, arsine or stibine as a group V hydride source.
    Type: Grant
    Filed: October 6, 1983
    Date of Patent: March 12, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Kenneth P. Quinlan, Thomas E. Erstfeld
  • Patent number: 4499258
    Abstract: Polyaromatic ether-sulfone-ketones containing fluoro-substituted-p-cyclophane units were prepared from isophthaloyl chloride, terephthaloyl chloride, diphenyl ether, diphenoxydiphenyl sulfone and a small amount of either 1,1, 2,2, 9,9, 10,10-octafluoro [2,2]-p-cyclophane (type B) or pseudo-p-1,1, 2,2, 9,9, 10,10-octofluoro [2,2]-p-cyclophane bis-acid chloride (type A) by a Friedal-Crafts type polymerization procedure. The p-cyclophane units were incorporated as cross-linking sites.
    Type: Grant
    Filed: May 30, 1984
    Date of Patent: February 12, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Carl S. Marvel, See Lin
  • Patent number: 4499395
    Abstract: The present invention concerns itself with crystallographically doubly rotated quartz orientations vibrating in the transverse c-mode with turnover temperatures which are considerably less sensitive to angular misorientation than the comparable well known AT- or BT-cuts. These crystals are arbitrarily designated as AK-cut crystals and are defined by .phi.-angle variations between 30.degree.-60.degree. and .theta.-angle variations between 12.degree.-32.degree.. The turnover temperatures of these resonators are between 60.degree. C. and 200.degree. C.
    Type: Grant
    Filed: May 26, 1983
    Date of Patent: February 12, 1985
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Alfred Kahan
  • Patent number: 4488914
    Abstract: A process for depositing an epitaxial film of a III-V compound onto the surface of a crystallographically compatible substrate which includes contacting said substrate with a vaporous mixture of a group III element and a group V element to effect the deposition of a group III-V compound thereon while simultaneously introducing a flow of hydrogen halide gas during deposition of the group III-V compound.
    Type: Grant
    Filed: October 29, 1982
    Date of Patent: December 18, 1984
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Kenneth P. Quinlan, Thomas E. Erstfeld
  • Patent number: 4488311
    Abstract: This invention comprises an optically pumped iodine monofluoride laser operating on the B.sup.3 .pi.(0.sup.+).fwdarw.X.sup.2 .SIGMA..sup.+ system. Ground state IF was produced by the reaction between I.sub.2 and F.sub.2 in an optical cavity which was subsequently optically pumped with a high energy, broadband dye laser to produce lasing energy.
    Type: Grant
    Filed: November 23, 1981
    Date of Patent: December 11, 1984
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Steven J. Davis, Leonard Hanko
  • Patent number: 4487640
    Abstract: A method for depositing a (Hg,Cd)Te film onto a CdTe substrate by using two separate vaporizeable sources of reactant materials each maintained at separate and distinct temperatures followed by the step of mixing both of each sources with a hydrogen halide gas and passing the resulting mixtures over a CdTe substrate maintained at a lower temperature distinct and different from the temperatures maintained during vaporization of the two distinct vaporizeable sources.
    Type: Grant
    Filed: February 22, 1983
    Date of Patent: December 11, 1984
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventor: Thomas E. Erstfeld