Abstract: A method of inventory management is described. Upon activation of a button on a wireless device, the wireless device having a light source and a transceiver with a unique media address corresponding to a unique product, the device broadcasts a first signal including an order command and the unique media address by the transceiver via a wireless medium. A central controller then receives the first signal, identifies the unique media address included in the first signal, and using a database, identifies the unique product associated with the unique media address.

Abstract: A method of forming oxide layers of different thickness on a substrate is described, wherein the oxide layers preferably serve as gate insulation layers of field effect transistors. The method allows to form very thin, high quality oxide layers with a reduced number of masking steps compared to the conventional processing, wherein the thickness difference can be maintained within a range of some tenths of a nanometer. The method substantially eliminates any high temperature oxidations and is also compatible with most chemical vapor deposition techniques used for gate dielectric deposition in sophisticated semiconductor devices.

Abstract: A method is provided, the method comprising forming a buffer layer above a structure layer, and forming a dielectric layer above the buffer layer. The method also comprises patterning the dielectric layer to form a salicide block above a portion of the structure layer protecting the portion from a subsequent salicidation. A device is also provided, the device comprising a buffer layer above a structure layer and a dielectric layer above the buffer layer. The dielectric layer is patterned to form a salicide block above a portion of the structure layer to protect the portion from a subsequent salicidation.

Abstract: A method is provided for forming a copper interconnect, the method including forming a first dielectric layer above a structure layer, forming a first opening in the first dielectric layer, and forming a first copper structure in the first opening. The method also includes forming a sacrificial dielectric layer above the first dielectric layer and above the first copper structure, forming a second opening in the sacrificial dielectric layer above at least a portion of the first copper structure, and forming a second copper structure in the second opening, the second copper structure contacting the at least the portion of the first copper structure. The method further includes removing the sacrificial dielectric layer above the first dielectric layer and adjacent the second copper structure, and forming the copper interconnect by annealing the second copper structure and the first copper structure.

Abstract: In one aspect of the present invention, an apparatus for retaining an electrical connector is provided. The apparatus includes a tray adapted to receive an electrical device having a flexible connector coupled thereto. The tray is moveable between first and second positions. A spring extends between the tray and the flexible connector. The spring urges the flexible connector into a serpentine configuration in the first tray position.

Abstract: A method is provided for controlling the critical dimensions of a polysilicon gate electrode, and for improving transistor drive current control. The method involves subjecting the gate structure of a transistor to a thermal treatment process in the presence of hydrogen gas. The thermal treatment process is performed subsequent to gate etching and photoresist mask removal, and provides gate electrodes having a more homogeneous linewidth, thereby improving transistor performance.

Abstract: Disclosed are novel nucleic acid and peptide compositions comprising latent TGF.beta. binding proteins (LTBPs). Also disclosed are methods of using LTBP-2 and LTBP-3 peptides and the DNA segments which encode them.