Patents Represented by Attorney Winston & Strawn LLP
  • Patent number: 8352059
    Abstract: A method for manufacturing a reproduction of a three-dimensional physical object by obtaining a digital two-dimensional representation of the object, manipulating the two-dimensional representation to input-data for a manufacturing machine, and manufacturing a reproduction of a three-dimensional physical object based on the input-data.
    Type: Grant
    Filed: April 19, 2007
    Date of Patent: January 8, 2013
    Assignee: Damvig Develop Future ApS
    Inventors: Susanne Damvig, Jesper Damvig
  • Patent number: 8349382
    Abstract: A beverage system for providing a beverage, methods of making the beverage and the resulting beverage are shown herein. The system includes a beverage-forming concentrate and an aroma or aroma-providing component separated from the concentrate; wherein the concentrate and aroma are combinable upon reconstitution for providing the beverage. One method includes delivering a fresh beverage taste to an on-premise beverage at a point of dispensation, by delivering at least one aroma or aroma-providing component in an amount sufficient to enhance the organoleptic properties of a beverage separately from a beverage concentrate prior to when the beverage is dispensed, and mixing the aroma or aroma-providing compound with a liquid and the beverage concentrate or with a mixture of a beverage concentrate and a liquid when the beverage is being dispensed.
    Type: Grant
    Filed: September 10, 2009
    Date of Patent: January 8, 2013
    Assignee: Nestec S.A.
    Inventors: Pu-Sheng Cheng, Ying Zheng, Serena Laroia, Wenjie Hu, Rachid Rahmani, Eugene Scoville, Randall C. Chrisman, Shannon Joyce Gavie, Walter F. Landry, Brian J. McDonough, Randall L. Morrison, Anthony Klueppel, Christian Milo
  • Patent number: 8347808
    Abstract: The invention relates to an apparatus for applying solid edible particulates to an exposed surface of an edible substrate. The apparatus includes a particulate supply, a metered dosing system, a conduit through which the measured particulates are to the edible substrate, an applicator nozzle to direct the measured particulates from the conduit onto the exposed surface of the substrate, and a vacuum system that supplies a directed stream of air to transfer the particulates from the dosing system through the conduit and the nozzle. The particulates are ejected at a velocity sufficient to cut through air currents between the nozzle and substrate, but insufficient to fully penetrate the exposed surface of the substrate, to deposit and adhere a substantial amount of the particulates in a desired pattern onto the exposed surface of the substrate.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: January 8, 2013
    Assignee: Nestec S.A.
    Inventors: Marla D. Belzowski, Richard E. Ludwick
  • Patent number: 8349703
    Abstract: The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 ? in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
    Type: Grant
    Filed: November 23, 2007
    Date of Patent: January 8, 2013
    Assignee: Soitec
    Inventors: Sébastien Kerdiles, Willy Michel, Walter Schwarzenbach, Daniel Delprat, Nadia Ben Mohamed
  • Patent number: 8349187
    Abstract: A method and solution for eluting one of antimony(V) and a mixture of antimony(III) and antimony(V) from an ion exchange resin, comprises contacting the resin with an eluting solution comprising thiourea having a concentration of at least 0.002 M and hydrochloric acid having a concentration of at least 3 M. The method can be used for electrolytes in an industrial electrorefining process, by the further steps of contacting the electrolyte with an ion exchange resin to adsorb the antimony from the electrolyte and separating the resin from the electrolyte, before contacting the resin with the eluting solution comprising thiourea and hydrochloric acid. The method and solution address the difficulties of removing antimony(V), and allow for increased reuse of the resins.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: January 8, 2013
    Assignee: Her Majesty the Queen in Right of Canada as Represented by the Minister of Natural Resources
    Inventor: Patricio A. Riveros
  • Patent number: 8343782
    Abstract: The present invention relates to a method that involves providing a stack of a first substrate and a InGaN seed layer formed on the first substrate, growing an InGaN layer on the InGaN seed layer to obtain an InGaN-on-substrate structure, forming a first mirror layer overlaying the exposed surface of the grown InGaN layer, attaching a second substrate to the exposed surface of the mirror layer, detaching the first substrate from the InGaN seed layer and grown InGaN layer to expose a surface of the InGaN seed layer opposite the first mirror layer, and forming a second mirror layer overlaying the opposing surface of the InGaN seed layer.
    Type: Grant
    Filed: September 29, 2010
    Date of Patent: January 1, 2013
    Assignee: Soitec
    Inventor: Fabrice M. Letertre
  • Patent number: 8338266
    Abstract: The present invention relates to a method for molecular adhesion bonding between at least a first wafer and a second wafer involving aligning the first and second wafers, placing the first and second wafers in an environment having a first pressure (P1) greater than a predetermined threshold pressure; bringing the first wafer and the second wafer into alignment and contact; and initiating the propagation of a bonding wave between the first and second wafer after the wafers are aligned and in contact by reducing the pressure within the environment to a second pressure (P2) below the threshold pressure. The invention also relates to the three-dimensional composite structure that is obtained by the described method of adhesion bonding.
    Type: Grant
    Filed: July 27, 2011
    Date of Patent: December 25, 2012
    Assignee: Soitec
    Inventor: Marcel Broekaart
  • Patent number: 8338811
    Abstract: A level detection device for detecting an upper surface of a liquid at a reference level. The device includes a reservoir having a bottom wall and one or more side walls that delimit a cavity for containing the liquid; a light emitter for emitting a light beam towards this cavity; at least one reflection surface for reflecting the light beam; and a light detector for detecting the emitted light beam upon reflection. The emitter and detector are so arranged that, when the surface of the liquid passes the reference level, a state of detection of the light beam by the detector is changed. The emitter, detector and reflection surface(s) are so located and oriented relative to the cavity that the emitted light beam is: detectable by the detector upon travelling through the liquid in the cavity; and refractable at the surface of the liquid towards or away from the detector so that the state of detection is a function of such refraction.
    Type: Grant
    Filed: March 10, 2010
    Date of Patent: December 25, 2012
    Assignee: Nestec S.A.
    Inventors: Markus Lang, Peter Möri, Renzo Moser
  • Patent number: 8338400
    Abstract: Methods, formulations, and devices for providing transdermal or transmucosal delivery of testosterone to female subjects in need thereof. The formulations and methods treat symptoms of hormonal disorders including hypogonadism, female sexual desire disorder, female menopausal disorder, and adrenal insufficiency.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: December 25, 2012
    Assignee: Antares Pharma IPL AG
    Inventors: Leah M. Lehman, Stephen M. Simes
  • Patent number: 8333144
    Abstract: A beverage machine having a height-adjustment device that includes a movable support plate for adjusting the position of the recipient relative to at least one beverage outlet. The support plate is movable relative to the at least one beverage outlet. The machine also includes a displacement mechanism for displacing the support plate relative to the outlet. The displacement mechanism includes a motorized driver for driving the displacement mechanism, a controller for controlling the actuation of the driver and which is configured to set a predetermined distance between the outlet and the recipient. A drip-collecting device can also be selectively provided to collect liquid falling from the beverage outlet when the recipient is not present.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: December 18, 2012
    Assignee: Nestec S.A.
    Inventors: Christophe S. Boussemart, Fabien Ludovic Agon, Antoine Ryser
  • Patent number: 8334007
    Abstract: The invention relates to a continuous process for the preparation of a flavor or fragrance delivery system, wherein the presence of two heat exchangers operating respectively an evaporation and cooling step, allow to optimize the quality and yield of the final product.
    Type: Grant
    Filed: March 19, 2003
    Date of Patent: December 18, 2012
    Assignee: Firmenich SA
    Inventors: Robert Clark McIver, Jean-Paul Leresche, Bessaa Neffah
  • Patent number: 8334483
    Abstract: A combination including a heater, a first connection device and a second connection device. The heater has heating elements or resistors; and a heater connector with electric heater conductors connected to the electric heating elements. The first and second connection devices have first and second output connectors with conductors for connection to the conductors of the heater connector and first and second input connector for connection to first and second standard connectors of first and second power sources with first and second voltage levels. The electric conductors of the first output connector have a first connection configuration in the first connection device and the electric conductors of the second output connector have a second connection configuration in the second connection device different to the first connection configuration.
    Type: Grant
    Filed: February 17, 2010
    Date of Patent: December 18, 2012
    Assignee: Nestec S.A.
    Inventors: Alain Jaccard, Pascal Mauroux
  • Patent number: 8329870
    Abstract: The present invention provides water-soluble reactive esters of carboxy polysaccharides and derivatives thereof. The reactive carboxy polysaccharide derivatives are useful per se in aqueous solutions or specifically for the formation of water-soluble covalent fibrinogen conjugates. A preferred conjugate is a hyaluronic acid-fibrinogen conjugate and fibrin adhesive, clot or matrix derived from it. Methods of preparation and methods of use in tissue repair and regeneration are also disclosed.
    Type: Grant
    Filed: January 6, 2008
    Date of Patent: December 11, 2012
    Assignee: Hepacore Ltd.
    Inventors: Boaz Amit, Hilla Barkay-Olami, Avner Yayon
  • Patent number: 8329240
    Abstract: A method of improving the flow properties or cold solubility of a milk powder and use of the modified powder in beverage distribution machine for delivering, in particular, cold beverages. The method includes controlling glycation of proteins in the range of 10 to 35% blocked lysine and lactose crystallization between 5 and 50%. The resulting powder also represents an embodiment of the invention.
    Type: Grant
    Filed: July 5, 2007
    Date of Patent: December 11, 2012
    Assignee: Nestec S.A.
    Inventors: Robert Baechler, François Morgan, Jean-Claude Gumy, Parvathi Sellappan
  • Patent number: 8329565
    Abstract: Methods which can be applied during the epitaxial growth of semiconductor structures and layers of III-nitride materials so that the qualities of successive layers are successively improved. An intermediate epitaxial layer is grown on an initial surface so that growth pits form at surface dislocations present in the initial surface. A following layer is then grown on the intermediate layer according to the known phenomena of epitaxial lateral overgrowth so it extends laterally and encloses at least the agglomerations of intersecting growth pits. Preferably, prior to growing the following layer, a discontinuous film of a dielectric material is deposited so that the dielectric material deposits discontinuously so as to reduce the number of dislocations in the laterally growing material. The methods of the invention can be performed multiple times to the same structure. Also, semiconductor structures fabricated by these methods.
    Type: Grant
    Filed: May 12, 2011
    Date of Patent: December 11, 2012
    Assignees: Soitec, Arizona Board of Regents for and on Behalf of Arizona State University
    Inventors: Chantal Arena, Ilsu Han
  • Patent number: 8325506
    Abstract: The invention provides a content-addressable memory cell formed by two transistors that are configured so that one of the transistors is for storing a data bit and the other for is storing the complement of the data bit. Each transistor has a back control gate that can be controlled to block the associated transistor. The device also includes a comparison circuit that is configured to operate the first and second transistors in read mode while controlling the back control gate of each of the transistors so as to block the passing transistor if a proposed bit and the stored bit correspond. Then, the presence or absence of current on a source line linked to the source of each of the transistors indicates whether the proposed bit and the stored bit are identical or not. The invention also provides methods for operating the content-addressable memory cells of this invention, as well as content-addressable memories having a plurality of the content-addressable memory cells of this invention.
    Type: Grant
    Filed: December 21, 2010
    Date of Patent: December 4, 2012
    Assignee: Soitec
    Inventors: Carlos Mazure, Richard Ferrant
  • Patent number: 8324530
    Abstract: A method for heating a wafer that has at least one layer to be heated and a sub-layer. The method includes applying at least one light flux pulse to the wafer for heating the at least one layer in a manner such that the absorption coefficient of the flux by the layer is low as long as the temperature of the layer to be heated is in the low temperature range (PBT) but the absorption coefficient increases significantly when the temperature of the layer enters a high temperature range (PHT). Also, a sub-layer is selected such that the absorption coefficient of the applied light flux at the selected wavelength is high in the low temperature range (PBT) and the temperature enters the high temperature range (PHT) when the sub-layer is subjected to the light flux. The application of the light flux achieves improved heating of the wafer.
    Type: Grant
    Filed: September 26, 2008
    Date of Patent: December 4, 2012
    Assignee: Soitec
    Inventor: Michel Bruel
  • Patent number: 8324072
    Abstract: A process for treating a semiconductor-on-insulator type structure that includes, successively, a support substrate, an oxide layer and a thin semiconductor layer. The process includes formation of a silicon nitride or silicon oxynitride mask on the thin semiconductor layer to define exposed areas at the surface of the layer which are not covered by the mask, and which are arranged in a desired pattern; and application of a heat treatment in a neutral or controlled reducing atmosphere and under controlled conditions of temperature and time to induce at least a portion of the oxygen of the oxide layer to diffuse through the thin semiconductor layer, thereby resulting in the controlled reduction in the oxide thickness in the areas of the oxide layer corresponding to the desired pattern. The mask is formed so as to be at least partially buried in the thickness of the thin semiconductor layer.
    Type: Grant
    Filed: September 21, 2009
    Date of Patent: December 4, 2012
    Assignee: Soitec
    Inventors: Christelle Veytizou, Fabrice Gritti, Eric Guiot, Oleg Kononchuk, Didier Landru
  • Patent number: 8323407
    Abstract: The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: December 4, 2012
    Assignee: Soitec
    Inventors: Chantal Arena, Christiaan Werkhoven
  • Patent number: 8324078
    Abstract: A method of fracturing a composite structure along an embrittlement plane defined between two layers by producing a fracture in the structure along the embrittlement plane. During fracturing, the composite structure is disposed in a boat housing and held in contact against stiffeners disposed on both sides of the structure and aligned parallel to each other. Each stiffener has a diameter that is at least 40% to 300% of the diameter of the composite structure to be fractured.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: December 4, 2012
    Assignee: Soitec
    Inventor: David Legros