Patents Represented by Attorney Winston & Strawn LLP
  • Patent number: 7981416
    Abstract: The present invention provides to a humanized monoclonal antibody having immunostimulatory effects. This antibody binds specifically to B lymphoblastoid cells, induces proliferation and activation of peripheral blood lymphocytes, particularly T cells, and is capable of eliciting an anti-tumor effect upon administration to subjects suffering from an immune deficiency.
    Type: Grant
    Filed: March 18, 2009
    Date of Patent: July 19, 2011
    Assignees: CureTech Ltd., Mor-Research Applications Ltd.
    Inventors: Britta Hardy, Steven Tarran Jones, Leah Klapper
  • Patent number: 7981436
    Abstract: The present invention relates to the formation of hydrogels based on guanosine hydrazide derivatives in the presence of cations. The hydrogels can be used as a carrier/delivery system for biologically active substances such as flavors, fragrances, insect attractants or repellents, bactericides, fungicides, pharmaceuticals or agrochemicals.
    Type: Grant
    Filed: September 6, 2007
    Date of Patent: July 19, 2011
    Assignees: Firmenich SA, Universite Louis Pasteur, Centre National de la Recherche Scientifique
    Inventors: Jean-Marie Lehn, Nampally Sreenivasachary, Andreas Herrmann
  • Patent number: 7981768
    Abstract: A method for producing an epitaxial layer. First, a structure is fabricated by: formation of an intermediate layer on a donor substrate; and formation of the epitaxial layer on the intermediate layer by epitaxy; with the melting temperature of the intermediate layer being lower than the melting temperature of the epitaxial layer; and then a detachment step for transferring the epitaxial layer from the donor substrate. The detachment step includes applying at least one thermal treatment performed at a temperature of between the melting temperature of the intermediate layer and the melting temperature of the epitaxial layer.
    Type: Grant
    Filed: April 15, 2008
    Date of Patent: July 19, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventor: Yves-Matthieu Le Vaillant
  • Patent number: 7981767
    Abstract: The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
    Type: Grant
    Filed: December 22, 2008
    Date of Patent: July 19, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: Pascal Guenard, Bruce Faure, Fabrice Letertre, Michael R. Krames, Nathan F. Gardner, Melvin B. McLaurin
  • Patent number: 7977747
    Abstract: The invention specifically relates to methods of fabricating a composite substrate by providing a first insulating layer on a support substrate at a thickness of e1 and providing a second insulating layer on a source substrate at a thickness of e2, with each layer having an exposed face for bonding; providing plasma activation energy in an amount sufficient to activate a portion of the thickness of the face of the first insulating layer emp1 and a portion of the thickness of the face of the second insulating layer emp1; providing a final insulating layer by molecular bonding the activated face of the first insulating layer with the activated face of the second insulating layer; and removing a back portion of the source substrate while retaining an active layer comprising a remaining portion of the source substrate bonded to the support substrate with the final insulating layer interposed therein to form the composite substrate.
    Type: Grant
    Filed: February 18, 2010
    Date of Patent: July 12, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: Frédéric Allibert, Sébastien Kerdiles
  • Patent number: 7977705
    Abstract: In one embodiment, the invention provides substrates that are structured so that devices fabricated in a top layer thereof have properties similar to the same devices fabricated in a standard high resistivity substrate. Substrates of the invention include a support having a standard resistivity, a semiconductor layer arranged on the support substrate having a high-resistivity, preferably greater than about 1000 Ohms-cm, an insulating layer arranged on the high-resistivity layer, and a top layer arranged on the insulating layer. The invention also provides methods for manufacturing such substrates.
    Type: Grant
    Filed: May 21, 2009
    Date of Patent: July 12, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: Bich-Yen Nguyen, Carlos Mazure
  • Patent number: 7973200
    Abstract: The invention relates to the use as perfuming ingredients of 8a-alkyl-perhydro-naphthalenol derivatives, to impart odor notes of the woody-earthy type.
    Type: Grant
    Filed: October 29, 2008
    Date of Patent: July 5, 2011
    Assignee: Firmenich SA
    Inventors: Robert Moretti, Olivier Etter
  • Patent number: 7972939
    Abstract: A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor wafer providing a layer of material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and a portion of the donor wafer is removed to transfer the thin layer to the receiving handle wafer and form the semiconductor structure. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first surface of the donor wafer prior to bonding by exposure to a plasma, and by conducting any thermal treatments after plasma activation at a temperature of 300° C.
    Type: Grant
    Filed: September 24, 2009
    Date of Patent: July 5, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventors: Sébastien Kerdiles, Christophe Maleville, Fabrice Letertre, Olivier Rayssac
  • Patent number: 7973005
    Abstract: The present invention relates to methods for the treatment of exacerbation periods of pulmonary diseases, particularly chronic obstructive pulmonary diseases, by administering alpha-1 antitrypsin (AAT) to a subject in need thereof. Particularly, the present invention discloses the efficient treatment of exacerbation periods of pulmonary diseases by administering AAT via inhalation.
    Type: Grant
    Filed: February 8, 2007
    Date of Patent: July 5, 2011
    Assignee: Kamada Ltd.
    Inventor: Shabtai Bauer
  • Patent number: 7968909
    Abstract: Reconditioned donor substrates that include a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and an additional layer deposited upon the opposite surface of the remainder substrate to increase its thickness and to form the reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers and is typically made from gallium nitride donor substrates.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: June 28, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventor: Frederic Dupont
  • Patent number: 7966927
    Abstract: A machine for preparing and dispensing drinks by extraction under pressure of a food substance contained in a capsule which can function in a standalone mode in order to deliver several drinks successively. The machine includes an extraction module for receiving a capsule, a heat insulated water reservoir for supplying the extraction module, a pump and an electrical power supply that includes a low voltage electrical accumulator configured to supply the pump. The reservoir has a heating device that includes an electrical element powered by the accumulator.
    Type: Grant
    Filed: September 28, 2007
    Date of Patent: June 28, 2011
    Assignee: Nestec S.A.
    Inventors: Alfred Yoakim, Matthieu Ozanne
  • Patent number: 7968911
    Abstract: A crystalline wafer comprising of a support substrate, a first layer and an interface layer. The first layer is of a first material in a relaxed state having a lattice parameter that is substantially equal to the nominal lattice parameter of the first material. The interface layer is in an at least partially molten state disposed between the support substrate and the first layer. The first material is preferably silicon germanium, and the interface layer includes germanium in a higher concentration than that of first material.
    Type: Grant
    Filed: June 23, 2009
    Date of Patent: June 28, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventor: George K Celler
  • Patent number: 7964348
    Abstract: The present invention provides assays for detecting the presence of the 531 cotton event nucleic acid sequences in a biological sample based on the DNA sequence of the recombinant construct inserted into the cotton genome and of genomic sequences flanking the insertion site in a cotton genome.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: June 21, 2011
    Assignee: Monsanto Technology LLC
    Inventors: Kim A Beazley, Jeanna R Hillyard, Shengzhi Pang, James K Roberts
  • Patent number: 7964004
    Abstract: An energy efficient, very flexible and safe feeding apparatus serves for creation of one or more plugs of compressible material for feeding into a gasifier, reactor or other combustion chamber. This apparatus includes a piston feeder with at least three pistons for pre-compressing and delivering compressible material towards a mouthpiece serving as a non-return valve and having an exit end facing a braking device with a friction member for regulating the final degree of compression of the material, and an opposing inlet end for at least partly compressed material. The inner diameter of at least an inlet section extending from the inlet end of the mouthpiece increases towards the first end, so that an angle between the inner wall of at least the inlet section and the longitudinal axis of the mouthpiece is larger than 0° but less than or equal to 3°.
    Type: Grant
    Filed: November 16, 2007
    Date of Patent: June 21, 2011
    Assignee: TK Energi A/S
    Inventors: Thomas Koch, Peter Friehling
  • Patent number: 7959954
    Abstract: A bioactive fraction obtained from Xylocarpus that is useful for the treatment of diabetes and dyslipidemia. This fraction can be provided in a pharmaceutical composition that is useful as antidiabetic and antidyslipidemic agent, or can be used in a method of treating diabetes and dyslipidemia in a subject. Also, a process for the preparation of bioactive fraction from Xylocarpus. Isomeric xyloccensins and the preparation of such compounds. Also, pharmaceutical compositions comprising a therapeutically effective amount of such isomeric xyloccensins optionally along with one or more pharmaceutically acceptable carriers, additives, lubricant and diluents and the use of such pharmaceutical compositions in a method for treating dyslipidemia.
    Type: Grant
    Filed: September 11, 2006
    Date of Patent: June 14, 2011
    Assignee: Council of Scientific and Industrial Research
    Inventors: Vijai Lakshmi, Ajet Saxena, Rajesh Kumar, Raghwendra Pal, Satyawan Singh, Arvind Kumar Srivastava, Preeti Tiwari, Deepak Raina, Anil Kumar Rastogi, Mahendra Nath Srivastava, Ramesh Chandra, Anju Puri, Ram Raghubir, Poonam Gupta, Narender Tadigoppula, Brijendra Kumar Tripathi, Sudhir Srivastava
  • Patent number: 7955062
    Abstract: A vane pump for pumping hydraulic fluid wherein fluid at a pressure intermediate the inlet pressure and the outlet pressure of the pump is supplied to under vane passages of the vanes located in and passing through the rise region of the pump. This assists in preventing damage to the vanes caused by driving the vanes through the protective coating of oil on the wall of the pump chamber when the vanes are travelling through an inlet region of the pump.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: June 7, 2011
    Inventor: Norman Ian Mathers
  • Patent number: 7956441
    Abstract: A composite structure that includes front faces of the first and second substrates that are molecularly bonded to each other. The dimensions of the second substrate outline are larger than the first substrate outline, and a peripheral side of the second substrate substantially borders the second front face and is oriented generally perpendicularly with respect thereto. The front faces are molecularly bonded such that the outline of the first front face is disposed at least partially within the outline of the second front face. A peripheral ring extending around the first front face and facing the first substrate, in which bonding between the front faces is weak or absent, has a maximum width of less than about 0.5 mm.
    Type: Grant
    Filed: September 20, 2007
    Date of Patent: June 7, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventor: Christophe Maleville
  • Patent number: 7954332
    Abstract: Systems and methods for controlling the temperature of an electrical device is described. The system includes a heat sink system in conjunction with a thermoelectric assembly. The systems and methods are particularly suitable in NEMA-4 electrical enclosures used in electrical submersible pump applications.
    Type: Grant
    Filed: January 19, 2007
    Date of Patent: June 7, 2011
    Assignee: Alkhorayef Petroleum Company
    Inventor: Tomasz M. Orlowski
  • Patent number: 7956436
    Abstract: A method for forming a device wafer with a recyclable support by providing a wafer having first and second surfaces, with at least the first surface of the wafer comprising a semiconductor material that is suitable for receiving or forming electronic devices thereon, providing a supporting substrate having upper and lower surfaces, and providing the second surface of the wafer or the upper surface of the supporting substrate with void features in an amount sufficient to enable a connecting bond therebetween to form a construct wherein the bond is formed at an interface between the wafer and the substrate and is suitable to maintain the wafer and supporting substrate in association while forming or applying electronic devices to the first surface of the wafer, but which connecting bond is severable at the interface due to the void features to separate the substrate from the wafer so that the substrate can be reused.
    Type: Grant
    Filed: August 27, 2009
    Date of Patent: June 7, 2011
    Assignee: S.O.I.Tec Silicon on Insulator Technologies
    Inventor: George K. Celler
  • Patent number: D640022
    Type: Grant
    Filed: March 8, 2010
    Date of Patent: June 14, 2011
    Assignee: Oreck Holdings LLC
    Inventors: Christopher M. Paterson, Ernest Matthew Chavana, Jr., Victor Brent McClearen